利用Cu、Co调节ZnAlO基透明导电薄膜光学与电学性能研究
摘要
ZnO是一种常见的半导体材料,可以较为容易的产生光致发光或者受激辐射,具有很好的应用前景,有着广泛的应用价值,ZnO单晶可以相对容易的生长,在可见光谱中具有较小的光灵敏度和高透明度以及和玻璃、塑料相兼容的温度,对环境的影响和毒性也低于其他大多数半导体,且成本低廉,使得ZnO作为透明导电薄膜具有很强的竞争力。通过在ZnO中掺杂可以有效调节ZnO的导电性能和光学性能,有利于薄膜的性能优化。
本文采用激光脉冲沉积方法(Pulsed Laser Deposition PLD)制备掺杂ZnO薄膜,选取Si02及Si作为样品的衬底。文章研究了不同元素及含量对ZnO薄膜的结构性能、光学性能及电学性能的影响及改性研究,主要研究内容如下：
1、本文采用的掺杂手段为脉冲激光沉积法沉积扩散掺杂,掺杂样品均呈现出单一的(002)方向的衍射峰,具有良好的择优方向的生长,掺杂进入了ZnO薄膜的晶格,薄膜的纤锌矿的结构未发生改变。
2、研究了Al掺杂含量对ZnO薄膜的影响。Al的掺入使得晶面间距差别较小,掺杂没有明显改变晶格结构。薄膜的透光性降低,薄膜带隙变宽。掺杂导致样品载流子浓度升高,但在Hall迁移率的共同作用之下,样品的电阻率略降低。
3、我们在上述结论条件下继续深入研究了Co/Cu掺杂和ZAO薄膜的关系。样品薄膜均呈沿(002)方向择优生长。Co掺杂会影响样品的可见光的范围内光透过率,对ZAO薄膜的光学带隙变化影响较小。Cu掺杂对样品的光透过率影响较小,但会使样品的吸收边向低能量方向发生移动。Cu掺杂较Co掺杂对载流子浓度贡献大,我们认为这是由于在相同条件下Cu比Co更容易填充间隙并提供电子。掺杂样品的性能指数低于未掺杂样品,Cu掺杂相比Co掺杂性能指数优异。
4、最后我们研究Co和Cu共掺ZAO薄膜。我们认为薄膜中存在着VZn缺陷,Zni缺陷,单电离的VZn-缺陷及一价的O空位。能带间隙因掺杂而被展宽,紫外发光增强,锌空位随掺杂数量增多。载流子浓度先增加而后减少。薄膜Hall迁移率与之相反,使得样品的电阻率未发生明显的变化。掺杂减弱了样品的室温铁磁性,正是由于Cu的加入占据了相邻阳离子的位置,使得阳离子之间的双交换作用被打断,减弱了样品的原有磁性。
ZnO is a semiconductor with a wide band gap (3.36eV) and large exciton binding energy (60meV). It can be relatively easy to produce photoluminescence or stimulated radiation. It has a wide range of value. The growth of ZnO single crystal is relatively easy, and ZnO has a smaller light sensitivity and a high degree of transparency. It also has low cost and the inflence on the environment and toxicity is also lower than most other semiconductors. There are all make the ZnO has a strongly practicable. By doping can effectively regulate the conductivity and optical properties of ZnO, which is conducive to the performance optimization of the film.
In this paper, the pulsed laser deposition (PLD) is used for ZnO thin films on SiO2substrate. The doped films all have good c-axis orientation and different optical and electrical properties. The main contents are as follows:
1、The films deposited on single-crystal SiO2substrates are prepared by pulsed laser deposition (PLD). A strong peak growth along the (002) direction at34.4°in the films is attributed to the wurtzite structure, The films have good crystallization quality. The ion into the lattice of ZnO thin films, and the structure of ZnO is not change.
2、We studied the influence of Al doped into ZnO thin films. The sizes of the crystals with Al-doped are gradually growth, the film easier to form larger particles. The doping did not change the lattice of structure, and the less impact on the crystal spacing. the light transmittance of the films are reduced with doping Al. Films band gap narrowed with increasing Al. under the effect of the Hall mobility and carrier concentration, the resistivity of the samples decreased with increasing Al doping content.
3、We continue study of Co/Cu doping ZAO thin film. Co doping will affect the transmittance of the sample, the less impact on the change of the optical band gap of ZAO films. Cu-doped sample of the transmission rate is less affected, but doped will move absorption edge of the sample to the short wavelength. Cu doping carrier concentration much higher than Co doping, the doped samples performance index are lower than the un-doped samples, and the maximum is the Cu doping of the samples.
4、We have studied the Co and Cu doped ZAO films. We believe that the existence of defects Vzn, Zn;, the single ionization Vzn defects and a price of O vacancies in the film. Band gap broadening and the free exciton emission enhanced with doping. The carrier concentration first increases and then decreases, Hall mobility showed the opposite trend, the resistivity of the sample is not changed significantly.
本文采用激光脉冲沉积方法(Pulsed Laser Deposition PLD)制备掺杂ZnO薄膜,选取Si02及Si作为样品的衬底。文章研究了不同元素及含量对ZnO薄膜的结构性能、光学性能及电学性能的影响及改性研究,主要研究内容如下：
1、本文采用的掺杂手段为脉冲激光沉积法沉积扩散掺杂,掺杂样品均呈现出单一的(002)方向的衍射峰,具有良好的择优方向的生长,掺杂进入了ZnO薄膜的晶格,薄膜的纤锌矿的结构未发生改变。
2、研究了Al掺杂含量对ZnO薄膜的影响。Al的掺入使得晶面间距差别较小,掺杂没有明显改变晶格结构。薄膜的透光性降低,薄膜带隙变宽。掺杂导致样品载流子浓度升高,但在Hall迁移率的共同作用之下,样品的电阻率略降低。
3、我们在上述结论条件下继续深入研究了Co/Cu掺杂和ZAO薄膜的关系。样品薄膜均呈沿(002)方向择优生长。Co掺杂会影响样品的可见光的范围内光透过率,对ZAO薄膜的光学带隙变化影响较小。Cu掺杂对样品的光透过率影响较小,但会使样品的吸收边向低能量方向发生移动。Cu掺杂较Co掺杂对载流子浓度贡献大,我们认为这是由于在相同条件下Cu比Co更容易填充间隙并提供电子。掺杂样品的性能指数低于未掺杂样品,Cu掺杂相比Co掺杂性能指数优异。
4、最后我们研究Co和Cu共掺ZAO薄膜。我们认为薄膜中存在着VZn缺陷,Zni缺陷,单电离的VZn-缺陷及一价的O空位。能带间隙因掺杂而被展宽,紫外发光增强,锌空位随掺杂数量增多。载流子浓度先增加而后减少。薄膜Hall迁移率与之相反,使得样品的电阻率未发生明显的变化。掺杂减弱了样品的室温铁磁性,正是由于Cu的加入占据了相邻阳离子的位置,使得阳离子之间的双交换作用被打断,减弱了样品的原有磁性。
ZnO is a semiconductor with a wide band gap (3.36eV) and large exciton binding energy (60meV). It can be relatively easy to produce photoluminescence or stimulated radiation. It has a wide range of value. The growth of ZnO single crystal is relatively easy, and ZnO has a smaller light sensitivity and a high degree of transparency. It also has low cost and the inflence on the environment and toxicity is also lower than most other semiconductors. There are all make the ZnO has a strongly practicable. By doping can effectively regulate the conductivity and optical properties of ZnO, which is conducive to the performance optimization of the film.
In this paper, the pulsed laser deposition (PLD) is used for ZnO thin films on SiO2substrate. The doped films all have good c-axis orientation and different optical and electrical properties. The main contents are as follows:
1、The films deposited on single-crystal SiO2substrates are prepared by pulsed laser deposition (PLD). A strong peak growth along the (002) direction at34.4°in the films is attributed to the wurtzite structure, The films have good crystallization quality. The ion into the lattice of ZnO thin films, and the structure of ZnO is not change.
2、We studied the influence of Al doped into ZnO thin films. The sizes of the crystals with Al-doped are gradually growth, the film easier to form larger particles. The doping did not change the lattice of structure, and the less impact on the crystal spacing. the light transmittance of the films are reduced with doping Al. Films band gap narrowed with increasing Al. under the effect of the Hall mobility and carrier concentration, the resistivity of the samples decreased with increasing Al doping content.
3、We continue study of Co/Cu doping ZAO thin film. Co doping will affect the transmittance of the sample, the less impact on the change of the optical band gap of ZAO films. Cu-doped sample of the transmission rate is less affected, but doped will move absorption edge of the sample to the short wavelength. Cu doping carrier concentration much higher than Co doping, the doped samples performance index are lower than the un-doped samples, and the maximum is the Cu doping of the samples.
4、We have studied the Co and Cu doped ZAO films. We believe that the existence of defects Vzn, Zn;, the single ionization Vzn defects and a price of O vacancies in the film. Band gap broadening and the free exciton emission enhanced with doping. The carrier concentration first increases and then decreases, Hall mobility showed the opposite trend, the resistivity of the sample is not changed significantly.
引文
[1]R. P. Borges, B. Ribeiro, A. R. G. Costa, et al. Magnetic and transport properties of transition-metal implanted ZnO single crystals [J]. The European Physical Journal B 2012,85,3(9)
[2]Zu. P, Tang Z.K, Wong G K, et al. [J]. Solid State Communication 1997,103(8): 459-463
[3]Peng cheng Wang, Li qun Ai, Yun gang Li, Xiao ming Sang and Jing long Bu Growth and Application of High Quality ZnO Films Grown on Diamond Substrates. [J]. Advanced Materials Research 2011,295:2011-2014
[4]F.J. Liu, Z.F. Hu Ultraviolet photoresistors based on ZnO thin films grown by P-MBE [J]. Solid-State Electronics 2012,68:90-92
[5]Pawar B N, Jadkar S R, Takwale M G. Deposition and characterization of transparent and conductive sprayed ZnO thin films [J]. J. Phys. Chem. Solids,2005, 66(10):1779
[6]Farida Selim Cu-Doping of ZnO by Nuclear Transmutation and Electrical and Optical Characterization of Cu Acceptors [J]. American Physical Society 2012,57,1
[7]S. Chattopadhyay Enhancement of room temperature ferromagnetism of Fe-doped ZnO epitaxial thin films with Al co-doping [J]. Journal of Magnetism and Magnetic Materials 2011,323(8):1033-1039
[8]Minami T, Suzuki S, Miyata T. Transparent conducting impurity-co-doped ZnO: Al thin films prepared by magnet-on sputtering [J]. Thin Solid Films,2001,398:53
[1]P.S. Xu, Y.M. Sun, C.S. Shi, F.Q. Xu, The electronic structure and spectral properties of ZnO and its defects [J]. Nuclear Instruments and Methods in Physics Research Section B 2003,199:286-290
[2]Chris G. Van de Walle Defect analysis and engineering in ZnO [J]. Physica B: Condensed Matter2001,308-310:899-903
[3]Leung, Y. H. Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength [J]. Applied Physics Letters 200988(10):103107
[4]F. Tuomisto, K. Saarinen, [J]. Phys. Rev. Lett.2003,91:205502
[5]Aleksandra B, Djurisic, Yu H L. Optical Properties of ZnO Nanostructures[J]. small 2006, 2:944
[6]Gregory J. Exarhos, Shiv K. Sharm Influence of processing variables on the structure and properties of ZnO films [J]. Thin Solid Films 2005270:27-32
[7]Elders, J, Gardeniers, J. G. E, Boyd, Characteristics of high quality ZnO thin films deposited by pulsed laser deposition [J] Applied Physics Letters 1994, 65(23):2963
[8]H. J. Ko, Y. F. Chen, S. K. Hong, H. Wenisch, [J]. Appl. Phys. Lett.2000,77: 3761
[9]M. Miyazaki, M. Sato, K. Mitsui and H. Nishimura [J]. Un-Cryst Solids 1997,218: 323
[10]J. F. Chang, H. L. Wang, and M. H. Hon [J]. J. Cryst. Growth,2000,211,93
[12]Walter Water, Sheng-Yuan Chu Physical and structural properties of ZnO sputtered films [J]. Materials Letters 2002 55:67-72
[13]A. Zunger, [J]. Appl. Phys. Lett.2003,83(57) [15] Yu. M. Gerbahtein and Ya M.. Zelikin[J]. Op. Spectrosc. 1969,27:275
[16]Haixia Chen, Jijun Ding, Shuyi Ma Violet and blue-green luminescence from Ti-doped ZnOfilms deposited by RF reactive magnetron sputtering [J]. Superlattices and Microstructures 2011,49,2:176-182
[17]N. Ohashi, T. Sekiguchi, K. Aoyama, T. Ohgaki, Y. Terada, I. Tsurumi, and H. Haneda, [J]. J. Appl. Phys.2002,91,3658
[18]M. Caglar Structural and optical properties of copper doped ZnO films derived by sol-gel [J]. Applied Surface Science 2012,258:3039-3044
[19]F.M. Li, L.T. Bo, S.Y. Ma Effects of the oxygen partial pressure and annealing atmospheres on the microstructures and optical properties of Cu-doped ZnOfilms [J]. Superlattices and Microstructures 2012, 51(3) 332-342
[20]F.I. Vergunnas and G.A. Konivalow, [J]. J. Exp. Theoret. Phys. (USSR) 1952, 23, 712
[21]C. Klingshirn, [J]. Chemphyschem 2007,8:782-803
[22]Chiu, P.K. Study on sandwich structure of the transparent conducting oxide films prepared by electron beam evaporation at room temperature [J]. Nanoelectronics Conference (INEC),2011 IEEE 4th International 2011
[23]W. W. Wenas and S. Riyadi, in Carrier transport in high-efficiency ZnO/SiO2/Si solar cells, [J]. Elsevier Science, 2006, p 3261-3267
[24]T Nishizawa, K Hirata, J Ito, Y Aita, T Tsukazaki Crystal structure of the channelrhodopsin light-gated cation channel [J]. Nature, 2012
[25]R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, [J]. Applied Physics Letters 2007,91,3
[27]C. S. Rout, A. R. Raju, A. Govindaraj, and C. N. R. Rao, [J]. Solid State Communications 2006,138:136-138
[1]Wu Fan Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition [J]. Advanced Materials Research 2011,383-390
[2]Qian Li, Kun Gao, Zhigao Hu, Wenlei Yu, Ning Xu, Jian Sun, and Jiada Wu Photoluminescence and Lasing Properties of Catalyst-Free ZnO Nanorod Arrays Fabricated by Pulsed Laser Deposition [J]. J. Phys. Chem. C, 2012, 116(3):2330-2335 [3] Watanabe, Tomoaki, Maekawa, Yuya, Yasui, Toshinobu Electrical and Optical Properties of Heat-Resistant Transparent Conducting Films with ZnO-Based Multilayered Structures Fabricated by Pulsed Laser Deposition [J]. Journal of the Vacuum Society of Japan 2011,54(3):210-212
[4]Ajay Kaushal, Davinder Kaur Pulsedlaser deposition of transparent ZnO/MgO multilayers [J]. Journal of Alloys and Compounds2011,509,2:200-205
[5]Devajyoti Mukherjee Complimentary Ferromagnetic Mechanisms in Mn doped ZnO Thin films deposited using Pulsed Laser Ablation [J]. American Physical Society 2011,56(1)
[6]P. Gondoni, M. Ghidelli, F. Di Fonzo, V. Russo Structural and functional properties of Al:ZnO thin films grown by PulsedLaser Deposition at room temperature [J]. Thin Solid Films 2011,30
[7]A Abduev, A Akhmedov, A Asvarov and A Omaev Preferred oriented ZnO films growth on nonoriented substrates by CVD [J]. J. Phys.:Conf. Ser.2012,345 012046
[8]Martin Kroll, Thomas Lober, Vadim Schott, Christof Woll and Ulrich Kohler Thermal behavior of MOCVD-grown Cu-clusters on ZnO [J]. Physical Chemistry Chemical Physics 2012,5
[9]Jianze Zhao, Hongwei Liang, Jingchang Sun, Qiuju Feng, Shuoshi Li Influence of Sb doping on optical and structural properties of ZnO by MOCVD [J]. physica status solidi 2011,208,4:825-828
[10]Sun, H-Y, Geng, G-Z, Hunag, J-Y, Shan, F-K, Lee, Effects of Sputtering Pressure on Structure of ZnO Films Prepared by RF Magnetron Sputtering [J]. Journal of Qingdao University 2011,24, 1:38-41
[11]J.K. Dangbegnon, K. Talla, J.R. Botha Effect of the annealing environment on the optical properties of ZnO/GaAs grown by MOCVD [J] Journal of Luminescence 2011,131,12:2457-2462
[12]Jun-ichi Nomoto, Tomoyasu Hirano, Toshihiro Miyata, Tadatsugu Minami Preparation of Al-doped ZnO transparent electrodes suitable for thin-film solar cell applications by various types of magnetronsputtering depositions [J]. Thin Solid Films 2011,520,5:1400-1406
[13]Basavaraj Angadia, Ravi Kumarb, Dong-Hee Parkc, Ji-Won Choic, Won-Kook Choi Photoluminescence studies on MBE grown Co-doped ZnO thin films fabricated through ion implantation and swift heavy ion irradiation [J]. Nuclear Instruments and Methods in Physics Research Section B 2012,272, 1:305-308
[14]Arturs Medvids Optical Characterization of MBE-Grown ZnO Epilayers [J] Advanced Materials Research 2011,222
[15]Z. Yanga,1, Z. Zuoa, H.M. Zhoua, W.P. Beyermannb, J. L. Liu Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy [J]. Journal of Crystal Growth 2012,314:97-103
[16]M.A.Willard, D.E.Laughlin, M.E.McHenry. Recent advances in the development of (Fe, Co)88M7B4Cu1 magnets [J]. Journal of Applied physics 2000, 87(9):7091-7096
[1]Jin Ma. Electrical and optical properties of ZnO: Al films prepared by an evaporation method [J]. Thin Solid Films 1996,279(1-2):213-215
[2]TL Yang, DH Zhang, J Ma, Transparent conducting ZnO: Al films deposited on organic substrates deposited by rf magnetron-sputtering [J]. Thin Solid Films 1998, 326(1-2)
[3]ZC Jin, I Hamberg. Optical properties of sputter-deposited ZnO: Al thin films [J]. Journal of Applied Physics 1988,64(10):5117-5131
[4]A Suzuki, T Matsushita, N Wada. Transparent conducting Al-doped ZnO thin films prepared by pulsed laser deposition [J]. Jpn. J. Appl. Phys.1996,35:56-59
[5]M Jin, J Feng, Z De-Heng, M Hong-lei Optical and electronic properties of transparent conducting ZnO and ZnO: Al films prepared by evaporating method [J]. Thin Solid Films 1999,357(2):98-101
[6]Z.Y. Ninga, S.H. Chenga, S.B. Gea, Y. Chaoa. Preparation and characterization of ZnO: Al films by pulsed laser deposition [J]. Thin Solid Films 1997, 307(1):50-53
[7]Oliver Klutha. Comparative material study on RF and DC magnetron sputtered ZnO: Al films[J]. Thin Solid Films 2006,502:311-316
[8]J. B. Cui, M. A. Thomas, Y. C. Soo, H. Kandel, Effects of nitrogen on the growth and optical properties of ZnO thin films grown by pulsed laser deposition. [J] J. Phys. D:Appl. Phys.2009,42:155407.
[9]Carcia, P. F. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J]. Appl. Phys. Lett.2003 82(7):1117-1119
[10]K Ellmer, R Cebulla, R Wendt Transparent and conducting ZnO: Al films deposited by simultaneous RF- and DC-excitation of a magnetron [J]. Thin Solid Films 1998,317:413-416
[11]Y. M. Hu, C. W. Lin, J. C. Huang Dependences of the Al thickness and annealing temperature on the structural, optical and electrical properties in ZnO/Al multilayer. [J]. Thin Solid Films 2006,497:130-134
[12]Xin Chen, Wenjie Guan, Guojia Fang, X.Z. Zhao Influence of substrate temperature and post-treatment on the properties of ZnO:Al thin films prepared by pulsed laser deposition [J]. Applied Surface Science 2005,252(5):1561-1567
[13]A Sarkar, S Ghosh, S Chaudhuri. Studies on electron transport properties and the Burstein-Moss shift in indium-doped ZnO films [J]. Thin Solid Films 1991
[14]M Grundmann Transparent Conductive Oxide Semiconductors [J]. The Physics of Semiconductors 2010
[15]Yasuhiro Igasaki, Hiromi Saito The effects of zinc diffusion on the electrical and optical properties of ZnO: Al films prepared by rf reactive sputtering [J]. Thin Solid Films 1991,199(2):223-230
[16]Fang, Guo Jia, Jian Feng Effect of thickness on structural, electrical, and optical properties of ZnO: Al films deposited by pulsed laser deposition [J]. Journal of Applied Physics 2007,101(3)
[1]Byeong-Yun Oh, Min-Chang Jeong, Properties of transparent conductive ZnO:Al films prepared by co-sputtering [J]. Journal of Crystal Growth 2005,274:453-57
[2]Lu, J. G. p-type conduction in N-Al co-doped ZnO thin films [J]. Appl. Phys. Lett. 2005, 85(15): 3134-3135
[3]D. Horwat, A. Billard Effects of substrate position and oxygen gas flow rate on the properties of ZnO: Al films prepared by reactive co-sputtering [J]. Thin Solid Films 2007,515(13):5444-5448
[4]K Tominaga, T Takao, A Fukushim, T Morig, I Nakabayashi Film properties of ZnO:Al films deposited by co-sputtering of ZnO: Al and contaminated Zn targets with Co, Mn and Cr [J]. Vacuum2002,66:511-515
[5]Tengfei Li, Hong Qiu Characteristics of Ni-doped ZnO:Al films grown on glass by direct current magnetron co-sputtering [J]. Thin Solid Films 2007, 515:3905-3909
[6]C. N. R. Rao and F. L. Deepak Absence of ferromagnetism in Mn-and Co-doped ZnO [J]. Journal of Materials Chemistry 2005,15:573-578
[7]R. Groenen, J.L. Linden, An expanding thermal plasma for deposition of surface textured ZnO: Al with focus on thin film solar cell applications [J]. Applied Surface Science 2001,173:40-43
[8]J. Nayak, S. Kimura, S. Nozaki. Enhancement of the visible luminescence from the ZnO nanocrystals by Li and Al co-doping [J]. Journal of Luminescence2009, 129(1):12-16
[9]Eun Sub Shim, Hong Seong Kang, Jeong Seok Kang, Effect of the variation of film thickness on the structural and optical properties of ZnO thin films deposited on sapphire substrate using PLD [J]. Applied Surface Science 2002,186:474-476
[10]Wende Chang, Ping Wu et al. Study on synthesis and blue emission mechanism of ZnO tetrapodlike nanostructures. [J]. Journal of Applied Physics 2006,100, 054311
[11]Y. Segawa, A. Ohtomo, M. Kawasaki, H. Koinuma Growth of ZnO Thin Film by Laser MBE:Lasing of Exciton at Room Temperature [J]. physica status solid 1997,202(2):669-672
[12]Tamiko Ohshima, Tomoaki Ikegamia, Kenji Ebihara Synthesis of p-type ZnO thin films using co-doping techniques based on KrF excimer laser deposition [J].Thin Solid Films 2003,435:49-55
[13]A.P. Roth, J.B. Webb, D.F. Williams Absorptionedge shift in ZnO thin films at high carrier densities [J]. Solid State Communications 1981 39(12):1269-1271
[14]K Ueda, H Tabata. Magnetic and electric properties of transition metal doped ZnO films. [J]. Applied Physics Letters,2001
[15]M.Ohring. he Materials Science of Thin Films[M]. San Diego, Academic Press Inc,1992.
[1]Aleksandra B. Djuris and Yu Hang Leung Optical Properties of ZnO Nanostructures [J]. small 2006,2, No.8-9,944-961
[2]O. D. Jayakumar, I. K. Gopalakrishnan, S. K. Kulshreshtha The structural and magnetization studies of Co-doped ZnO co-doped with Cu:Synthesized by co-precipitation method [J]. J. Mater. Chem.2005,15:3514-3518
[3]Chang-Hong Chien, Shan Haw Chiou, G.Y. Guo Electronic structure and magnetic moments of 3d transition metal-doped ZnO[J]. Journal of Magnetism and Magnetic Materials2004,282:275-278
[4]Suo, Ya-Qin. Liu, Su Liu. Feng-Qiong Structural and optical properties of Na-Mg Co-doped ZnO film Chin. [J]. J. Luminescence 2010,31(3):353-358
[5]A. Teke,U. Ozgur, S. Dogan, X. Gu, H. Morkoc, B. Nemeth, J. Nause, H. O. Everitt. Excitonic fine structure and recombination dynamics in single-crystalline ZnO [J]. Phys. Rev. B 2004,70:195207
[6]Xue-Chao Liu, Er-Wei Shi, Zhi-Zhan Chen. Structural, optical and magnetic properties of Co doped ZnO films. [J]. Journal of Crystal Growth 2006, 296(2):135-140
[7]Ji Nan Zeng, Juay Kiang Low, Zhong Min Ren. Effect of deposition conditions on optical and electrical properties of ZnO films prepared by pulsed laser deposition. [J]. Applied Surface Science 2002,197-198(30):362-367
[8]B.G. Cho, I.H. Kim, D.H Kim, Electrical, optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputter [J]. Journal of the European Ceramic Society 2005,25(12):2161-2165
[9]Bixia Lin and Zhuxi Fu Green luminescent center in undoped zinc oxide films deposited on silicon substrates [J]. Appl. Phys. Lett.2001 79(7):943
[10]Aleksandra B, Djurisic, Yu H L. Optical Properties of ZnO Nanostructures [J] small 2006,2:944
[11]L Dai, XL Chen,WJWang, T Zhou and B Q Hu Growth and luminescence characterization of large-scale zinc oxide nanowires [J]. J. Phys.:Condens. Matter 2003,152221
[12]He F Q, Zhao Y P. Growth of ZnO Nanotetrapods with Hexagonal Crown [J]. Appl. Phys. Lett. 2006, 88:193113
[13]Hou D L, Ye X J, Meng H J, et al. Magnetic Properties of n-type Cu-doped ZnO Thin Films [J]. Appl. Phys. Lett. 2007, 90:142502
[14]Chang Oh Kim, Sung Kim, HyoungTaek Oh, et al. Effect of Electrical Conduction Properties on Magnetic Behaviors of Cu-doped ZnO Thin Films [J]. Physica B 2010, 405:4678-4681
[2]Zu. P, Tang Z.K, Wong G K, et al. [J]. Solid State Communication 1997,103(8): 459-463
[3]Peng cheng Wang, Li qun Ai, Yun gang Li, Xiao ming Sang and Jing long Bu Growth and Application of High Quality ZnO Films Grown on Diamond Substrates. [J]. Advanced Materials Research 2011,295:2011-2014
[4]F.J. Liu, Z.F. Hu Ultraviolet photoresistors based on ZnO thin films grown by P-MBE [J]. Solid-State Electronics 2012,68:90-92
[5]Pawar B N, Jadkar S R, Takwale M G. Deposition and characterization of transparent and conductive sprayed ZnO thin films [J]. J. Phys. Chem. Solids,2005, 66(10):1779
[6]Farida Selim Cu-Doping of ZnO by Nuclear Transmutation and Electrical and Optical Characterization of Cu Acceptors [J]. American Physical Society 2012,57,1
[7]S. Chattopadhyay Enhancement of room temperature ferromagnetism of Fe-doped ZnO epitaxial thin films with Al co-doping [J]. Journal of Magnetism and Magnetic Materials 2011,323(8):1033-1039
[8]Minami T, Suzuki S, Miyata T. Transparent conducting impurity-co-doped ZnO: Al thin films prepared by magnet-on sputtering [J]. Thin Solid Films,2001,398:53
[1]P.S. Xu, Y.M. Sun, C.S. Shi, F.Q. Xu, The electronic structure and spectral properties of ZnO and its defects [J]. Nuclear Instruments and Methods in Physics Research Section B 2003,199:286-290
[2]Chris G. Van de Walle Defect analysis and engineering in ZnO [J]. Physica B: Condensed Matter2001,308-310:899-903
[3]Leung, Y. H. Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength [J]. Applied Physics Letters 200988(10):103107
[4]F. Tuomisto, K. Saarinen, [J]. Phys. Rev. Lett.2003,91:205502
[5]Aleksandra B, Djurisic, Yu H L. Optical Properties of ZnO Nanostructures[J]. small 2006, 2:944
[6]Gregory J. Exarhos, Shiv K. Sharm Influence of processing variables on the structure and properties of ZnO films [J]. Thin Solid Films 2005270:27-32
[7]Elders, J, Gardeniers, J. G. E, Boyd, Characteristics of high quality ZnO thin films deposited by pulsed laser deposition [J] Applied Physics Letters 1994, 65(23):2963
[8]H. J. Ko, Y. F. Chen, S. K. Hong, H. Wenisch, [J]. Appl. Phys. Lett.2000,77: 3761
[9]M. Miyazaki, M. Sato, K. Mitsui and H. Nishimura [J]. Un-Cryst Solids 1997,218: 323
[10]J. F. Chang, H. L. Wang, and M. H. Hon [J]. J. Cryst. Growth,2000,211,93
[12]Walter Water, Sheng-Yuan Chu Physical and structural properties of ZnO sputtered films [J]. Materials Letters 2002 55:67-72
[13]A. Zunger, [J]. Appl. Phys. Lett.2003,83(57) [15] Yu. M. Gerbahtein and Ya M.. Zelikin[J]. Op. Spectrosc. 1969,27:275
[16]Haixia Chen, Jijun Ding, Shuyi Ma Violet and blue-green luminescence from Ti-doped ZnOfilms deposited by RF reactive magnetron sputtering [J]. Superlattices and Microstructures 2011,49,2:176-182
[17]N. Ohashi, T. Sekiguchi, K. Aoyama, T. Ohgaki, Y. Terada, I. Tsurumi, and H. Haneda, [J]. J. Appl. Phys.2002,91,3658
[18]M. Caglar Structural and optical properties of copper doped ZnO films derived by sol-gel [J]. Applied Surface Science 2012,258:3039-3044
[19]F.M. Li, L.T. Bo, S.Y. Ma Effects of the oxygen partial pressure and annealing atmospheres on the microstructures and optical properties of Cu-doped ZnOfilms [J]. Superlattices and Microstructures 2012, 51(3) 332-342
[20]F.I. Vergunnas and G.A. Konivalow, [J]. J. Exp. Theoret. Phys. (USSR) 1952, 23, 712
[21]C. Klingshirn, [J]. Chemphyschem 2007,8:782-803
[22]Chiu, P.K. Study on sandwich structure of the transparent conducting oxide films prepared by electron beam evaporation at room temperature [J]. Nanoelectronics Conference (INEC),2011 IEEE 4th International 2011
[23]W. W. Wenas and S. Riyadi, in Carrier transport in high-efficiency ZnO/SiO2/Si solar cells, [J]. Elsevier Science, 2006, p 3261-3267
[24]T Nishizawa, K Hirata, J Ito, Y Aita, T Tsukazaki Crystal structure of the channelrhodopsin light-gated cation channel [J]. Nature, 2012
[25]R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, [J]. Applied Physics Letters 2007,91,3
[27]C. S. Rout, A. R. Raju, A. Govindaraj, and C. N. R. Rao, [J]. Solid State Communications 2006,138:136-138
[1]Wu Fan Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition [J]. Advanced Materials Research 2011,383-390
[2]Qian Li, Kun Gao, Zhigao Hu, Wenlei Yu, Ning Xu, Jian Sun, and Jiada Wu Photoluminescence and Lasing Properties of Catalyst-Free ZnO Nanorod Arrays Fabricated by Pulsed Laser Deposition [J]. J. Phys. Chem. C, 2012, 116(3):2330-2335 [3] Watanabe, Tomoaki, Maekawa, Yuya, Yasui, Toshinobu Electrical and Optical Properties of Heat-Resistant Transparent Conducting Films with ZnO-Based Multilayered Structures Fabricated by Pulsed Laser Deposition [J]. Journal of the Vacuum Society of Japan 2011,54(3):210-212
[4]Ajay Kaushal, Davinder Kaur Pulsedlaser deposition of transparent ZnO/MgO multilayers [J]. Journal of Alloys and Compounds2011,509,2:200-205
[5]Devajyoti Mukherjee Complimentary Ferromagnetic Mechanisms in Mn doped ZnO Thin films deposited using Pulsed Laser Ablation [J]. American Physical Society 2011,56(1)
[6]P. Gondoni, M. Ghidelli, F. Di Fonzo, V. Russo Structural and functional properties of Al:ZnO thin films grown by PulsedLaser Deposition at room temperature [J]. Thin Solid Films 2011,30
[7]A Abduev, A Akhmedov, A Asvarov and A Omaev Preferred oriented ZnO films growth on nonoriented substrates by CVD [J]. J. Phys.:Conf. Ser.2012,345 012046
[8]Martin Kroll, Thomas Lober, Vadim Schott, Christof Woll and Ulrich Kohler Thermal behavior of MOCVD-grown Cu-clusters on ZnO [J]. Physical Chemistry Chemical Physics 2012,5
[9]Jianze Zhao, Hongwei Liang, Jingchang Sun, Qiuju Feng, Shuoshi Li Influence of Sb doping on optical and structural properties of ZnO by MOCVD [J]. physica status solidi 2011,208,4:825-828
[10]Sun, H-Y, Geng, G-Z, Hunag, J-Y, Shan, F-K, Lee, Effects of Sputtering Pressure on Structure of ZnO Films Prepared by RF Magnetron Sputtering [J]. Journal of Qingdao University 2011,24, 1:38-41
[11]J.K. Dangbegnon, K. Talla, J.R. Botha Effect of the annealing environment on the optical properties of ZnO/GaAs grown by MOCVD [J] Journal of Luminescence 2011,131,12:2457-2462
[12]Jun-ichi Nomoto, Tomoyasu Hirano, Toshihiro Miyata, Tadatsugu Minami Preparation of Al-doped ZnO transparent electrodes suitable for thin-film solar cell applications by various types of magnetronsputtering depositions [J]. Thin Solid Films 2011,520,5:1400-1406
[13]Basavaraj Angadia, Ravi Kumarb, Dong-Hee Parkc, Ji-Won Choic, Won-Kook Choi Photoluminescence studies on MBE grown Co-doped ZnO thin films fabricated through ion implantation and swift heavy ion irradiation [J]. Nuclear Instruments and Methods in Physics Research Section B 2012,272, 1:305-308
[14]Arturs Medvids Optical Characterization of MBE-Grown ZnO Epilayers [J] Advanced Materials Research 2011,222
[15]Z. Yanga,1, Z. Zuoa, H.M. Zhoua, W.P. Beyermannb, J. L. Liu Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy [J]. Journal of Crystal Growth 2012,314:97-103
[16]M.A.Willard, D.E.Laughlin, M.E.McHenry. Recent advances in the development of (Fe, Co)88M7B4Cu1 magnets [J]. Journal of Applied physics 2000, 87(9):7091-7096
[1]Jin Ma. Electrical and optical properties of ZnO: Al films prepared by an evaporation method [J]. Thin Solid Films 1996,279(1-2):213-215
[2]TL Yang, DH Zhang, J Ma, Transparent conducting ZnO: Al films deposited on organic substrates deposited by rf magnetron-sputtering [J]. Thin Solid Films 1998, 326(1-2)
[3]ZC Jin, I Hamberg. Optical properties of sputter-deposited ZnO: Al thin films [J]. Journal of Applied Physics 1988,64(10):5117-5131
[4]A Suzuki, T Matsushita, N Wada. Transparent conducting Al-doped ZnO thin films prepared by pulsed laser deposition [J]. Jpn. J. Appl. Phys.1996,35:56-59
[5]M Jin, J Feng, Z De-Heng, M Hong-lei Optical and electronic properties of transparent conducting ZnO and ZnO: Al films prepared by evaporating method [J]. Thin Solid Films 1999,357(2):98-101
[6]Z.Y. Ninga, S.H. Chenga, S.B. Gea, Y. Chaoa. Preparation and characterization of ZnO: Al films by pulsed laser deposition [J]. Thin Solid Films 1997, 307(1):50-53
[7]Oliver Klutha. Comparative material study on RF and DC magnetron sputtered ZnO: Al films[J]. Thin Solid Films 2006,502:311-316
[8]J. B. Cui, M. A. Thomas, Y. C. Soo, H. Kandel, Effects of nitrogen on the growth and optical properties of ZnO thin films grown by pulsed laser deposition. [J] J. Phys. D:Appl. Phys.2009,42:155407.
[9]Carcia, P. F. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J]. Appl. Phys. Lett.2003 82(7):1117-1119
[10]K Ellmer, R Cebulla, R Wendt Transparent and conducting ZnO: Al films deposited by simultaneous RF- and DC-excitation of a magnetron [J]. Thin Solid Films 1998,317:413-416
[11]Y. M. Hu, C. W. Lin, J. C. Huang Dependences of the Al thickness and annealing temperature on the structural, optical and electrical properties in ZnO/Al multilayer. [J]. Thin Solid Films 2006,497:130-134
[12]Xin Chen, Wenjie Guan, Guojia Fang, X.Z. Zhao Influence of substrate temperature and post-treatment on the properties of ZnO:Al thin films prepared by pulsed laser deposition [J]. Applied Surface Science 2005,252(5):1561-1567
[13]A Sarkar, S Ghosh, S Chaudhuri. Studies on electron transport properties and the Burstein-Moss shift in indium-doped ZnO films [J]. Thin Solid Films 1991
[14]M Grundmann Transparent Conductive Oxide Semiconductors [J]. The Physics of Semiconductors 2010
[15]Yasuhiro Igasaki, Hiromi Saito The effects of zinc diffusion on the electrical and optical properties of ZnO: Al films prepared by rf reactive sputtering [J]. Thin Solid Films 1991,199(2):223-230
[16]Fang, Guo Jia, Jian Feng Effect of thickness on structural, electrical, and optical properties of ZnO: Al films deposited by pulsed laser deposition [J]. Journal of Applied Physics 2007,101(3)
[1]Byeong-Yun Oh, Min-Chang Jeong, Properties of transparent conductive ZnO:Al films prepared by co-sputtering [J]. Journal of Crystal Growth 2005,274:453-57
[2]Lu, J. G. p-type conduction in N-Al co-doped ZnO thin films [J]. Appl. Phys. Lett. 2005, 85(15): 3134-3135
[3]D. Horwat, A. Billard Effects of substrate position and oxygen gas flow rate on the properties of ZnO: Al films prepared by reactive co-sputtering [J]. Thin Solid Films 2007,515(13):5444-5448
[4]K Tominaga, T Takao, A Fukushim, T Morig, I Nakabayashi Film properties of ZnO:Al films deposited by co-sputtering of ZnO: Al and contaminated Zn targets with Co, Mn and Cr [J]. Vacuum2002,66:511-515
[5]Tengfei Li, Hong Qiu Characteristics of Ni-doped ZnO:Al films grown on glass by direct current magnetron co-sputtering [J]. Thin Solid Films 2007, 515:3905-3909
[6]C. N. R. Rao and F. L. Deepak Absence of ferromagnetism in Mn-and Co-doped ZnO [J]. Journal of Materials Chemistry 2005,15:573-578
[7]R. Groenen, J.L. Linden, An expanding thermal plasma for deposition of surface textured ZnO: Al with focus on thin film solar cell applications [J]. Applied Surface Science 2001,173:40-43
[8]J. Nayak, S. Kimura, S. Nozaki. Enhancement of the visible luminescence from the ZnO nanocrystals by Li and Al co-doping [J]. Journal of Luminescence2009, 129(1):12-16
[9]Eun Sub Shim, Hong Seong Kang, Jeong Seok Kang, Effect of the variation of film thickness on the structural and optical properties of ZnO thin films deposited on sapphire substrate using PLD [J]. Applied Surface Science 2002,186:474-476
[10]Wende Chang, Ping Wu et al. Study on synthesis and blue emission mechanism of ZnO tetrapodlike nanostructures. [J]. Journal of Applied Physics 2006,100, 054311
[11]Y. Segawa, A. Ohtomo, M. Kawasaki, H. Koinuma Growth of ZnO Thin Film by Laser MBE:Lasing of Exciton at Room Temperature [J]. physica status solid 1997,202(2):669-672
[12]Tamiko Ohshima, Tomoaki Ikegamia, Kenji Ebihara Synthesis of p-type ZnO thin films using co-doping techniques based on KrF excimer laser deposition [J].Thin Solid Films 2003,435:49-55
[13]A.P. Roth, J.B. Webb, D.F. Williams Absorptionedge shift in ZnO thin films at high carrier densities [J]. Solid State Communications 1981 39(12):1269-1271
[14]K Ueda, H Tabata. Magnetic and electric properties of transition metal doped ZnO films. [J]. Applied Physics Letters,2001
[15]M.Ohring. he Materials Science of Thin Films[M]. San Diego, Academic Press Inc,1992.
[1]Aleksandra B. Djuris and Yu Hang Leung Optical Properties of ZnO Nanostructures [J]. small 2006,2, No.8-9,944-961
[2]O. D. Jayakumar, I. K. Gopalakrishnan, S. K. Kulshreshtha The structural and magnetization studies of Co-doped ZnO co-doped with Cu:Synthesized by co-precipitation method [J]. J. Mater. Chem.2005,15:3514-3518
[3]Chang-Hong Chien, Shan Haw Chiou, G.Y. Guo Electronic structure and magnetic moments of 3d transition metal-doped ZnO[J]. Journal of Magnetism and Magnetic Materials2004,282:275-278
[4]Suo, Ya-Qin. Liu, Su Liu. Feng-Qiong Structural and optical properties of Na-Mg Co-doped ZnO film Chin. [J]. J. Luminescence 2010,31(3):353-358
[5]A. Teke,U. Ozgur, S. Dogan, X. Gu, H. Morkoc, B. Nemeth, J. Nause, H. O. Everitt. Excitonic fine structure and recombination dynamics in single-crystalline ZnO [J]. Phys. Rev. B 2004,70:195207
[6]Xue-Chao Liu, Er-Wei Shi, Zhi-Zhan Chen. Structural, optical and magnetic properties of Co doped ZnO films. [J]. Journal of Crystal Growth 2006, 296(2):135-140
[7]Ji Nan Zeng, Juay Kiang Low, Zhong Min Ren. Effect of deposition conditions on optical and electrical properties of ZnO films prepared by pulsed laser deposition. [J]. Applied Surface Science 2002,197-198(30):362-367
[8]B.G. Cho, I.H. Kim, D.H Kim, Electrical, optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputter [J]. Journal of the European Ceramic Society 2005,25(12):2161-2165
[9]Bixia Lin and Zhuxi Fu Green luminescent center in undoped zinc oxide films deposited on silicon substrates [J]. Appl. Phys. Lett.2001 79(7):943
[10]Aleksandra B, Djurisic, Yu H L. Optical Properties of ZnO Nanostructures [J] small 2006,2:944
[11]L Dai, XL Chen,WJWang, T Zhou and B Q Hu Growth and luminescence characterization of large-scale zinc oxide nanowires [J]. J. Phys.:Condens. Matter 2003,152221
[12]He F Q, Zhao Y P. Growth of ZnO Nanotetrapods with Hexagonal Crown [J]. Appl. Phys. Lett. 2006, 88:193113
[13]Hou D L, Ye X J, Meng H J, et al. Magnetic Properties of n-type Cu-doped ZnO Thin Films [J]. Appl. Phys. Lett. 2007, 90:142502
[14]Chang Oh Kim, Sung Kim, HyoungTaek Oh, et al. Effect of Electrical Conduction Properties on Magnetic Behaviors of Cu-doped ZnO Thin Films [J]. Physica B 2010, 405:4678-4681