脉冲激光淀积法制备介电存储薄膜的研究
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摘要
随着超大规模集成电路的发展，寻找能够替代目前使用的电容器件Si基材
料是一项急待开展的研究课题。在64Mb动态随机存储器（DRAM）电容材料中，
Ta_2O_5基材料是很有希望的替代品。因此近年来制备高质量Ta_2O_5基薄膜的研究
开始引起人们的注意。
脉冲激光沉积（PLD）法自1987年出现以来，随着激光技术的进步而迅速
发展，现已成为最好的薄膜制备技术之一。用脉冲激光沉积法制备的高介电常数
Ta_2O_5基薄膜，在制造计算机高密度动态随机存储器方面有广阔的应用前景，可
能大大的增加计算机内存容量。在论文中，主要研究了用248nm波长激光对
（Ta_2O_5）_(0.92)（TiO_2）_(0.08)靶进行了脉冲激光沉积薄膜的实验研究。
在本论文中首先介绍了PLD实验设备的建立及其技术发展；其次是进行了
（Ta_2O_5）_(0.92)(TiO_2）_(0.08)陶瓷靶材以及PLD的薄膜制备实验研究，在此过程中，测量
了（Ta_2O_5）_(0.92)（TiO_2）_(0.08)介电薄膜的一些介电特性，并总结出最佳的淀积条件。
最后一部分是PLD软件的设计，该软件可以用于PLD实验的简化，并且可以对
实验参数进行确定，对实验数据进行记录、查询、修改等，它将有助于提高PLD
实验的效率。
Abstract
It is urgent to look for advanced materials to replace the silicon-based materials
currently in the development of future ultra-large scale integration storage. Among
many materials such as capacitors for dynamic random access memory(DRAM)
generation of 64Mbit, tantalum oxide is always considered to be one of more promising
candidates. Thus, the fabrication of Ta205-based thin films with high-quality has attracted
attention in recent years.
Since appeared in 1987, Pulsed Laser Deposition(PLD) made rapid progress and has
been one of the best technology of thin films preparation., PLD has received much
attention and has been applied. High dielectric constant Ta205-based thin film, which
prepared by PLD, has wide application prospect in the area of high-density DRAM
manufacture, and maybe enlarge the capability of DRAM. In this thesis, PLD of (Ta205)
O.92( Ti02) o.os target at 248nm has been mainly investigated.
Firstly, in this paper the establishment about the PLD experiment and its
development of PLD technology are introduced chiefly. Secondly, some results were
derived from some experiments of PLD, including the preparation of the (Ta205)
O.92( Ti02) o.o~ ceramic target and the dielectric film of PLD, during the process, a best
deposition condition of PLD has been summed up, and the dielectric characteristic has
been detected. The last section is introduction of the software桺LD2000. In this section,
computer recording, analyzing and querying of database method would be explained and
applied to the experiments of PLD, this software can be used for simplification and
optimization of PLD, which will enhance efficiency of the experiments helpfully.
x
料是一项急待开展的研究课题。在64Mb动态随机存储器（DRAM）电容材料中，
Ta_2O_5基材料是很有希望的替代品。因此近年来制备高质量Ta_2O_5基薄膜的研究
开始引起人们的注意。
脉冲激光沉积（PLD）法自1987年出现以来，随着激光技术的进步而迅速
发展，现已成为最好的薄膜制备技术之一。用脉冲激光沉积法制备的高介电常数
Ta_2O_5基薄膜，在制造计算机高密度动态随机存储器方面有广阔的应用前景，可
能大大的增加计算机内存容量。在论文中，主要研究了用248nm波长激光对
（Ta_2O_5）_(0.92)（TiO_2）_(0.08)靶进行了脉冲激光沉积薄膜的实验研究。
在本论文中首先介绍了PLD实验设备的建立及其技术发展；其次是进行了
（Ta_2O_5）_(0.92)(TiO_2）_(0.08)陶瓷靶材以及PLD的薄膜制备实验研究，在此过程中，测量
了（Ta_2O_5）_(0.92)（TiO_2）_(0.08)介电薄膜的一些介电特性，并总结出最佳的淀积条件。
最后一部分是PLD软件的设计，该软件可以用于PLD实验的简化，并且可以对
实验参数进行确定，对实验数据进行记录、查询、修改等，它将有助于提高PLD
实验的效率。
Abstract
It is urgent to look for advanced materials to replace the silicon-based materials
currently in the development of future ultra-large scale integration storage. Among
many materials such as capacitors for dynamic random access memory(DRAM)
generation of 64Mbit, tantalum oxide is always considered to be one of more promising
candidates. Thus, the fabrication of Ta205-based thin films with high-quality has attracted
attention in recent years.
Since appeared in 1987, Pulsed Laser Deposition(PLD) made rapid progress and has
been one of the best technology of thin films preparation., PLD has received much
attention and has been applied. High dielectric constant Ta205-based thin film, which
prepared by PLD, has wide application prospect in the area of high-density DRAM
manufacture, and maybe enlarge the capability of DRAM. In this thesis, PLD of (Ta205)
O.92( Ti02) o.os target at 248nm has been mainly investigated.
Firstly, in this paper the establishment about the PLD experiment and its
development of PLD technology are introduced chiefly. Secondly, some results were
derived from some experiments of PLD, including the preparation of the (Ta205)
O.92( Ti02) o.o~ ceramic target and the dielectric film of PLD, during the process, a best
deposition condition of PLD has been summed up, and the dielectric characteristic has
been detected. The last section is introduction of the software桺LD2000. In this section,
computer recording, analyzing and querying of database method would be explained and
applied to the experiments of PLD, this software can be used for simplification and
optimization of PLD, which will enhance efficiency of the experiments helpfully.
x
引文
[1] 杨邦朝，王文生，《薄膜物理与技术》，电子科技大学出版社，1994年
[2] 胡忠胥，恽正中，《薄厚膜混合集成电路》，国防工业出版社，1982年
[3] 王力衡，黄运添，《薄膜技术》，清华大学出版社，1991年
[4] Jun-Ying Zhang, Thin Solid Films 318, 252—256(1998)
[5] S.W. Park, Y. K. Baek, Journal of Electronic Materials 21, No6, 635—639 (1992)
[6] Hiroshi Shinriki, IEEE Transaction on electron devoices 37, No9, (1990)
[7] 曲喜新，《薄膜技术》，上海科技出版社，1986年
[8] R. F. Cava, Nature Vol. 377, 21 September, 215—217 (1995)
[9] Yijian Jiang, Ruyan Guo, A. S. Bhalla Mat. Lett. (1999)
[10] T. Eimori, Y. Ohno IEEE IEDM. 631—634 (1993)
[11] Yukio Nishimura, Applied Surfurce Science 79/80, 105—170(1994)
[12] K.W. Kwon, I.S. park IEEE IEDM 94 835—838 (1994)
[13] Jun Lin, Applied Physics Letters vol 74(16), 2370—2372 (1999)
[14] B.K. Moon, J. Aoyama, Applied Physics Letters vol 74, No6, 824—826 (1999)
[15] J.Y. Kim, M.C. Nielsen, Journal of Applied Physics vol 87, No3, (2000)
[16] 傅正文，张胜坤，《化学物理学报》，vol．12，No．2，186—190(1999)
[17] V. Mikhelashvili, G. Eisenstein, Applied Physics Letters vol 75, No 18, 2836(1999)
[18] Mingfei Zhou, Applied Surfurce Science 108 399—403(1997)
[19] H. Fujikawa and Y. Taga, Journal of Applied Physics vol 75, No3, 2538-2544(1994)
[20] D. Dijkkamp et al., Applied Physics Letters vol 51, (1987)
[21] Qi-Zong Qin, Journal of Applied Physics vol 83, No 11, 6082—6087 (1998)
[22] Yukio Nishimura Applied Surfurce Science 89 393—399 (1995)
[23] 田民波，刘德令，《薄膜科学与技术手册》，机械工业出版社，1992年
[24] 周岳亮，物理27卷3期6711—6717(1998)
[25] Douglas B. Chrisey, Graham K. Hubler, 《Pulsed Laser Deposition of Thin Film》(1997)
[26]S。Bdesu, H.S. Cho Applied Physics Letters vol 70(11), 1393 (1997)
[27]H.S. Hu, Z.G. Liu Journal of Applied Physics vol 80, No12, 7089 (1996)
[28]S. Ando, Y. Nakamura Jpn. Journal of Applied Physics Ⅰ 35 (9B) 4956 (1996)
[29]N. Inoue, T. Ozaki et. al Jpn. Journal of Applied Physics Ⅰ 36 (2) 704 (1994)
[30]V. Cracium, J. Elders Applied Physics Letters vol 62, 2963, (1994)
[31]D. Feiler, R.S. Williams et. al J. Cryst. Growth 137 (1-2), 1997 (12)
[32]J.S. Horweitz, D.B. Chrisey, Physics. Rev. B. Beam. Interact. Mater. At. 121 (1-4), (1997)
[33]J.T. Cheung, H. Sankur CRC Critical Rreviews in Solid State and Materials Sciences vol. 15, 63 (1988)
[34]J. A. Greer, M. D. Tabat, Physics. Rev. B. Beam. Interact. Mater. At. 357(1-4), (1997)
[35]J．L．沃森，W．克恩 《薄膜加工工艺》，机械工业出版社，1992年
[36]G. K. Hubler 《Pulsed Laser Deposition of Thin Film》(1997)
[37]雷仕湛，《激光技术手册》，科学出版社，1992年
[38]Basting, D.K. Mohla, EAlbers, andM. V. Bergmann, Lasers and Optoelektronic 2, 128-131 (1984)
[39]周玉，《陶瓷材料学》，哈尔滨工业大学出版社，1995年
[40]周玉，武高辉，《材料分析测试技术》，哈尔滨工业大学出版社，1996年
[41]王华馥，吴自勤，《固体物理实验方法》，高教出版社，1992年
[42]O' keeffe, Lizotter. Excimers—laser materials processing. North-Holland.(1994)
[43]《电子薄膜材料》，电子工业出版社，1994年
[44]K. Kinoshita et. al., Jpn. J. Applied. Phys., 33, L417 (1994)
[45]J. Gong. et. al., Jpn. J. Applied. Phys., 32, L687 (1993)
[46]Y. L. Zhou et. al., J. Superconductivity, 9, 625 (1996)
[47]Y. L. Zhou et. al., Chinese Science Bulletin, 41, 1938 (1996)
[48]M. Yoshimoto et. al., Applied Physics Lett, vol 67, 2615 (1995)
[49]《Delphi 5.0开发实例》，清汉计算机工作室， 机械工业出版社，1999年
[50]张威，卢庆龄，《Delphi 5.0编程与技巧》，科学出版社，1999年
[51]杨烈宇，关文铎，顾卓明，《材料表面薄膜技术》，人民交通出版社，1991年
[52] J.P. Zheng, Q.Y. Ying, S. Witanachchi, Applied Physics Lett, 54 ,954 (1989)
[53] H.S. Kim, H.S. Kwok, Applied Physics Lett, 61 ,2234 (1992)
[54] A. Gupta, B.W. Hussey, Applied Physics Lett, 57 ,2365 (1990)
[2] 胡忠胥，恽正中，《薄厚膜混合集成电路》，国防工业出版社，1982年
[3] 王力衡，黄运添，《薄膜技术》，清华大学出版社，1991年
[4] Jun-Ying Zhang, Thin Solid Films 318, 252—256(1998)
[5] S.W. Park, Y. K. Baek, Journal of Electronic Materials 21, No6, 635—639 (1992)
[6] Hiroshi Shinriki, IEEE Transaction on electron devoices 37, No9, (1990)
[7] 曲喜新，《薄膜技术》，上海科技出版社，1986年
[8] R. F. Cava, Nature Vol. 377, 21 September, 215—217 (1995)
[9] Yijian Jiang, Ruyan Guo, A. S. Bhalla Mat. Lett. (1999)
[10] T. Eimori, Y. Ohno IEEE IEDM. 631—634 (1993)
[11] Yukio Nishimura, Applied Surfurce Science 79/80, 105—170(1994)
[12] K.W. Kwon, I.S. park IEEE IEDM 94 835—838 (1994)
[13] Jun Lin, Applied Physics Letters vol 74(16), 2370—2372 (1999)
[14] B.K. Moon, J. Aoyama, Applied Physics Letters vol 74, No6, 824—826 (1999)
[15] J.Y. Kim, M.C. Nielsen, Journal of Applied Physics vol 87, No3, (2000)
[16] 傅正文，张胜坤，《化学物理学报》，vol．12，No．2，186—190(1999)
[17] V. Mikhelashvili, G. Eisenstein, Applied Physics Letters vol 75, No 18, 2836(1999)
[18] Mingfei Zhou, Applied Surfurce Science 108 399—403(1997)
[19] H. Fujikawa and Y. Taga, Journal of Applied Physics vol 75, No3, 2538-2544(1994)
[20] D. Dijkkamp et al., Applied Physics Letters vol 51, (1987)
[21] Qi-Zong Qin, Journal of Applied Physics vol 83, No 11, 6082—6087 (1998)
[22] Yukio Nishimura Applied Surfurce Science 89 393—399 (1995)
[23] 田民波，刘德令，《薄膜科学与技术手册》，机械工业出版社，1992年
[24] 周岳亮，物理27卷3期6711—6717(1998)
[25] Douglas B. Chrisey, Graham K. Hubler, 《Pulsed Laser Deposition of Thin Film》(1997)
[26]S。Bdesu, H.S. Cho Applied Physics Letters vol 70(11), 1393 (1997)
[27]H.S. Hu, Z.G. Liu Journal of Applied Physics vol 80, No12, 7089 (1996)
[28]S. Ando, Y. Nakamura Jpn. Journal of Applied Physics Ⅰ 35 (9B) 4956 (1996)
[29]N. Inoue, T. Ozaki et. al Jpn. Journal of Applied Physics Ⅰ 36 (2) 704 (1994)
[30]V. Cracium, J. Elders Applied Physics Letters vol 62, 2963, (1994)
[31]D. Feiler, R.S. Williams et. al J. Cryst. Growth 137 (1-2), 1997 (12)
[32]J.S. Horweitz, D.B. Chrisey, Physics. Rev. B. Beam. Interact. Mater. At. 121 (1-4), (1997)
[33]J.T. Cheung, H. Sankur CRC Critical Rreviews in Solid State and Materials Sciences vol. 15, 63 (1988)
[34]J. A. Greer, M. D. Tabat, Physics. Rev. B. Beam. Interact. Mater. At. 357(1-4), (1997)
[35]J．L．沃森，W．克恩 《薄膜加工工艺》，机械工业出版社，1992年
[36]G. K. Hubler 《Pulsed Laser Deposition of Thin Film》(1997)
[37]雷仕湛，《激光技术手册》，科学出版社，1992年
[38]Basting, D.K. Mohla, EAlbers, andM. V. Bergmann, Lasers and Optoelektronic 2, 128-131 (1984)
[39]周玉，《陶瓷材料学》，哈尔滨工业大学出版社，1995年
[40]周玉，武高辉，《材料分析测试技术》，哈尔滨工业大学出版社，1996年
[41]王华馥，吴自勤，《固体物理实验方法》，高教出版社，1992年
[42]O' keeffe, Lizotter. Excimers—laser materials processing. North-Holland.(1994)
[43]《电子薄膜材料》，电子工业出版社，1994年
[44]K. Kinoshita et. al., Jpn. J. Applied. Phys., 33, L417 (1994)
[45]J. Gong. et. al., Jpn. J. Applied. Phys., 32, L687 (1993)
[46]Y. L. Zhou et. al., J. Superconductivity, 9, 625 (1996)
[47]Y. L. Zhou et. al., Chinese Science Bulletin, 41, 1938 (1996)
[48]M. Yoshimoto et. al., Applied Physics Lett, vol 67, 2615 (1995)
[49]《Delphi 5.0开发实例》，清汉计算机工作室， 机械工业出版社，1999年
[50]张威，卢庆龄，《Delphi 5.0编程与技巧》，科学出版社，1999年
[51]杨烈宇，关文铎，顾卓明，《材料表面薄膜技术》，人民交通出版社，1991年
[52] J.P. Zheng, Q.Y. Ying, S. Witanachchi, Applied Physics Lett, 54 ,954 (1989)
[53] H.S. Kim, H.S. Kwok, Applied Physics Lett, 61 ,2234 (1992)
[54] A. Gupta, B.W. Hussey, Applied Physics Lett, 57 ,2365 (1990)