基于MEMS技术的Fabry-Perot腔可调光学滤波器研究
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摘要
可调谐光学滤波器是现代光通信系统和传感器网络的关键器件，利用微机电系统(MEMS)技术的法布里—珀罗(Fabry-Perot)腔可调光学滤波器以其体积小、性能高、成本低等优点成为众多解决方案中有力的竞争者之一。本论文以该类型滤波器为研究对象，从理论与实际工艺制备等方面对其进行了探索。
论文阐述了F-P干涉仪的一般理论，利用矩阵法计算了多种的四分之一波堆光学介质薄膜的反射率和反射相移。以此为基础，较为系统地研究了高反射镜面的反射相移及其色散对短腔长的F-P干涉仪光学性能的影响。首次从理论上解释了由高反射镜面的反射相移和色散导致的短腔长的法布里—珀罗干涉仪自由谱域缩短效应，并由实验得到了验证。
论文研究将压电驱动精密、稳定的特点同MEMS批量制造优势相结合，自主设计了一种新型的压电驱动F-P腔可调光学滤波器，设计中采用了独特的阻挡块结构将两镜面的平行度保持在一个合适的范围。制备中先后尝试了普通硅片湿法腐蚀工艺、选择性外延工艺和利用SOI材料制作三种路线方案。
本论文首次利用湿法腐蚀工艺制备了F-P腔。经测试其插入损耗约为8dB，半波宽1.5～2nm，精细因子在50以上，两镜面无需静电调节机构即可保持良好的平行度。
本论文在国内首先开展了选择性外延工艺在MEMS领域的前期研究，尝试利用选择性外延工艺制作法布里—珀罗腔光学器件，总结了在选择性外延工艺当中的一些重要现象和效应，包括一些尚未见文献报道的现象。
本论文利用SOI硅片制备了新型的压电驱动F-P腔体可调光学滤波器并进行了初步的光学测试。在制备中笔者利用简单的各向异性湿法腐蚀工艺和金属溅射(或真空蒸发)工艺实现了将电极从硅片的一面引到另一面，该电极导引方法在本实验之前未见相关报道。
经初步测试可调滤波器的插入损耗约为8dB，半波宽5nm，加电驱动后透射峰值
//
摘要
波长移动量可达2压un。笔者对实验结果进行了分析，对下一步的工作进行了展望，
确定了改进方向与措施。
Tunable optical filter is the key device of modern optical communication and sensor systems. With the advantages of small volume, high performance, and low cost, the Fabry-Perot (F-P) tunable filter employing the Micro-Electro-Mechanical systems (MEMS) technology is one of the most challenging among all optical tunable filter solutions. This thesis focused on the related theories of the MOEMS tunable filter as well as its fabrication techniques.
The conventional theory of the F-P Interferometer was introduced firstly, and then the reflectivity and reflection phase shift of quite a few kinds of dielectric films consisting of quarter wave stacks were calculated. The influence of the reflection phase shift and its dispersion on the optical performance of the short-cavity (SC) F-P interferometer was analyzed in details. The free spectral range (FSR) shortening effect in the SCF-P interferometer was theoretically proved for the first time, which matched the experimental data very well.
By combining with the precise and stabile characteristics of piezoelectric driving and the batch fabrication advantage of the MEMS technology, a novel F-P tunable filter was proposed and designed. The parallelism of the two F-P reflection mirrors can be well controlled by the proposed structure. Three fabrication processes, including (i) wet etching, (ii) the selective epitaxial growth (SEG) on silicon wafers, and (iii) using silicon on insulator (SOI) wafers, were studied.
The F-P cavities employing the wet etching process was fabricated for the first time. The insertion loss were about 8dB, the full width at half maximum (FWHM) about 1.5-2 run, and the finesse more than 50. The high parallelism of the two reflection mirrors was automatically achieved without applying addition electrostatic control.
The application of the SEG process on the MEMS field was explored and the effort to fabricate F-P based optical devices employing the SEG technology was made. The phenomenon appeared in the SEG experiments were summarized, some of which were first
ABSTRACT
observed.
A novel F-P tunable filter driven by using piezoelectrics was fabricated with the SOI material. By employing simple wet anisotropic etching process and metal sputtering (or evaporating) process, the electrical interconnect between the electrodes on both sides of the silicon wafer was realized for the first time.
The measured results showed that the insertion loss of the tunable filter was about 8 dB, the FWHM about 5 nm, and the transmitted peak red shifted about 20 nm. The test results were analyzed. The further measures to improve the performance were also discussed in this thesis.
论文阐述了F-P干涉仪的一般理论，利用矩阵法计算了多种的四分之一波堆光学介质薄膜的反射率和反射相移。以此为基础，较为系统地研究了高反射镜面的反射相移及其色散对短腔长的F-P干涉仪光学性能的影响。首次从理论上解释了由高反射镜面的反射相移和色散导致的短腔长的法布里—珀罗干涉仪自由谱域缩短效应，并由实验得到了验证。
论文研究将压电驱动精密、稳定的特点同MEMS批量制造优势相结合，自主设计了一种新型的压电驱动F-P腔可调光学滤波器，设计中采用了独特的阻挡块结构将两镜面的平行度保持在一个合适的范围。制备中先后尝试了普通硅片湿法腐蚀工艺、选择性外延工艺和利用SOI材料制作三种路线方案。
本论文首次利用湿法腐蚀工艺制备了F-P腔。经测试其插入损耗约为8dB，半波宽1.5～2nm，精细因子在50以上，两镜面无需静电调节机构即可保持良好的平行度。
本论文在国内首先开展了选择性外延工艺在MEMS领域的前期研究，尝试利用选择性外延工艺制作法布里—珀罗腔光学器件，总结了在选择性外延工艺当中的一些重要现象和效应，包括一些尚未见文献报道的现象。
本论文利用SOI硅片制备了新型的压电驱动F-P腔体可调光学滤波器并进行了初步的光学测试。在制备中笔者利用简单的各向异性湿法腐蚀工艺和金属溅射(或真空蒸发)工艺实现了将电极从硅片的一面引到另一面，该电极导引方法在本实验之前未见相关报道。
经初步测试可调滤波器的插入损耗约为8dB，半波宽5nm，加电驱动后透射峰值
//
摘要
波长移动量可达2压un。笔者对实验结果进行了分析，对下一步的工作进行了展望，
确定了改进方向与措施。
Tunable optical filter is the key device of modern optical communication and sensor systems. With the advantages of small volume, high performance, and low cost, the Fabry-Perot (F-P) tunable filter employing the Micro-Electro-Mechanical systems (MEMS) technology is one of the most challenging among all optical tunable filter solutions. This thesis focused on the related theories of the MOEMS tunable filter as well as its fabrication techniques.
The conventional theory of the F-P Interferometer was introduced firstly, and then the reflectivity and reflection phase shift of quite a few kinds of dielectric films consisting of quarter wave stacks were calculated. The influence of the reflection phase shift and its dispersion on the optical performance of the short-cavity (SC) F-P interferometer was analyzed in details. The free spectral range (FSR) shortening effect in the SCF-P interferometer was theoretically proved for the first time, which matched the experimental data very well.
By combining with the precise and stabile characteristics of piezoelectric driving and the batch fabrication advantage of the MEMS technology, a novel F-P tunable filter was proposed and designed. The parallelism of the two F-P reflection mirrors can be well controlled by the proposed structure. Three fabrication processes, including (i) wet etching, (ii) the selective epitaxial growth (SEG) on silicon wafers, and (iii) using silicon on insulator (SOI) wafers, were studied.
The F-P cavities employing the wet etching process was fabricated for the first time. The insertion loss were about 8dB, the full width at half maximum (FWHM) about 1.5-2 run, and the finesse more than 50. The high parallelism of the two reflection mirrors was automatically achieved without applying addition electrostatic control.
The application of the SEG process on the MEMS field was explored and the effort to fabricate F-P based optical devices employing the SEG technology was made. The phenomenon appeared in the SEG experiments were summarized, some of which were first
ABSTRACT
observed.
A novel F-P tunable filter driven by using piezoelectrics was fabricated with the SOI material. By employing simple wet anisotropic etching process and metal sputtering (or evaporating) process, the electrical interconnect between the electrodes on both sides of the silicon wafer was realized for the first time.
The measured results showed that the insertion loss of the tunable filter was about 8 dB, the FWHM about 5 nm, and the transmitted peak red shifted about 20 nm. The test results were analyzed. The further measures to improve the performance were also discussed in this thesis.
引文
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