Sr_2TiO_4透明导电薄膜制备及光电性能研究
摘要
Sr2TiO4是一种二维层状钙钛矿型宽禁带氧化物,因其优异的光电特性将成为可替代二元氧化物薄膜的三元化合物材料。原材料廉价且地球储量丰富,室温下禁带宽度约为3.8eV,在可见光波段透明。本征Sr2TiO4为绝缘体,适当掺杂之后,可变为良好的半导体和导体,可用于宽禁带透明半导体和透明导电领域,如电致发光器件、太阳能电池、电阻开关存储器等。特别是利用Sr2TiO4作为薄膜晶体管的半导体层,由于其兼具可控电传导与可见光波段透明,这在很大程度上拓宽了透明薄膜晶体管的应用领域,因此,能够得到优质的透明导电薄膜是实现其不寻常特性的关键。
采用溶胶凝胶工艺制备一系列Sr2TiO4粉体和透明导电薄膜,用X射线衍射、扫描电子显微镜、原子力显微镜对材料的物相和表面形貌进行了观察和分析。用薄膜光学测试仪NKD-8000、四探针测试仪对薄膜进行了光、电性能测试,讨论了PVP的添加量及施主掺杂浓度对薄膜光电特性的影响。
使用正交设计方法优化出制备粉体材料的工艺参数,分析了水量、酸量、热处理温度对材料形成的影响,发现在水锶比为38：1,水酸比为1.5：1,退火温度为850℃情况下所得到的材料结构较好。
溶胶-凝胶旋涂法制备的Sr2TiO4薄膜表面形貌、光学性能的研究表明,添加摩尔比0.4%的PVP能显著改善薄膜的表面形貌及光特性。La元素的掺入能改善薄膜的形貌及光电特性。
Sr2TiO4material is a kind of two-dimensional layered perovskite oxide with large energy gap, it will be an alternative of the dualistic oxide materials as a ternary compound materials for its excellent photoelectric characteristics, It can be prepared from raw materials which are cheap and abundant on the earth, its energy gap is about 3.8 eV at room temperature, it is transparent to the visible light band. Intrinsic Sr2TiO4 material is insulated, it turns into semiconductor or conductor with appropriate doping. Thus, it can be used in the field of transparent and conductive semiconductor with large energy gap, such as the electroluminescent devices and solar cells, resistance switch memories etc. Especially, Sr2TiO4 material can be used as semiconductive layer of thin film transistor for its controllable electric conduction and visible light transparency; all of these widen the application fields of transparent thin-film transistors largely. Therefore, how to get high quality transparent conductive film is the key to realize its unusual features.
This paper uses the sol-gel method to prepare kinds of Sr2TiO4 powders and transparent conductive thin films. Used X-ray diffraction, scanning electron microscope, atomic force microscope to observe and analyze the surface morphology of the material. Chose the film optical tester NKD8000 and the four-point probe tester to test the photoelectric characteristics of the thin films. The influences to photoelectric characteristics of the films after adding PVP and doping the benefactor impurities are also discussed.
Tried orthogonal design method to optimize the process parameters of powder materials, analyzed the influences of forming the material by changing the usage amount of water, acid and the heat treatment temperature. It shows the material has better structure in the experiments when the ratio of water to strontium is 1.5:1(mole ratio) and to acid is 38:1 (volume ratio), annealing temperature is at 850℃.
After studying the photoelectric characteristics of Sr2TiO4 thin films prepared by using the sol-gel method, the result suggests a significant improvement of surface topography and optical properties when adding PVP at the ratio of 0.4% mole to strontium. The study also shows that the doping of La can improve the surface morphology and photoelectric characteristics of the Sr2TiO4 thin films.
采用溶胶凝胶工艺制备一系列Sr2TiO4粉体和透明导电薄膜,用X射线衍射、扫描电子显微镜、原子力显微镜对材料的物相和表面形貌进行了观察和分析。用薄膜光学测试仪NKD-8000、四探针测试仪对薄膜进行了光、电性能测试,讨论了PVP的添加量及施主掺杂浓度对薄膜光电特性的影响。
使用正交设计方法优化出制备粉体材料的工艺参数,分析了水量、酸量、热处理温度对材料形成的影响,发现在水锶比为38：1,水酸比为1.5：1,退火温度为850℃情况下所得到的材料结构较好。
溶胶-凝胶旋涂法制备的Sr2TiO4薄膜表面形貌、光学性能的研究表明,添加摩尔比0.4%的PVP能显著改善薄膜的表面形貌及光特性。La元素的掺入能改善薄膜的形貌及光电特性。
Sr2TiO4material is a kind of two-dimensional layered perovskite oxide with large energy gap, it will be an alternative of the dualistic oxide materials as a ternary compound materials for its excellent photoelectric characteristics, It can be prepared from raw materials which are cheap and abundant on the earth, its energy gap is about 3.8 eV at room temperature, it is transparent to the visible light band. Intrinsic Sr2TiO4 material is insulated, it turns into semiconductor or conductor with appropriate doping. Thus, it can be used in the field of transparent and conductive semiconductor with large energy gap, such as the electroluminescent devices and solar cells, resistance switch memories etc. Especially, Sr2TiO4 material can be used as semiconductive layer of thin film transistor for its controllable electric conduction and visible light transparency; all of these widen the application fields of transparent thin-film transistors largely. Therefore, how to get high quality transparent conductive film is the key to realize its unusual features.
This paper uses the sol-gel method to prepare kinds of Sr2TiO4 powders and transparent conductive thin films. Used X-ray diffraction, scanning electron microscope, atomic force microscope to observe and analyze the surface morphology of the material. Chose the film optical tester NKD8000 and the four-point probe tester to test the photoelectric characteristics of the thin films. The influences to photoelectric characteristics of the films after adding PVP and doping the benefactor impurities are also discussed.
Tried orthogonal design method to optimize the process parameters of powder materials, analyzed the influences of forming the material by changing the usage amount of water, acid and the heat treatment temperature. It shows the material has better structure in the experiments when the ratio of water to strontium is 1.5:1(mole ratio) and to acid is 38:1 (volume ratio), annealing temperature is at 850℃.
After studying the photoelectric characteristics of Sr2TiO4 thin films prepared by using the sol-gel method, the result suggests a significant improvement of surface topography and optical properties when adding PVP at the ratio of 0.4% mole to strontium. The study also shows that the doping of La can improve the surface morphology and photoelectric characteristics of the Sr2TiO4 thin films.
引文
[1]Lewis BL,Paine DC,Applications and processing of transparent conducting oxides[J]. MRS Bulletin,2000,25(8):22-27.
[2]Klaus Ellmer and Rainald Mientus. Carrier transport in polycrystalline transparent conductive oxides:A comparative study of zinc oxide and indium oxide[J]. Thin solid films,2008,516(14):4620-4627.
[3]Y. Hirose, N. Yamada, S. Nakao, et al. Large Electron Mass Anisotropy in a d-Electron-Based Transparent ConductingOxide:Nb-Doped Anatase TiO2 Epitaxial Films, Phys. Rev. B,79 [16] 165108,5pp(2009).
[4]陶然,太阳能电池发电—前途无量的市场[N].电子产品世界,2009,03.
[5]Tadatsugu Minami and Toshihiro Miyata.Present status and future prospects for develop ment of non- or reduced-indium transparent conductingoxide thin films[J]. Thin Solid Films.2008,517(4):1474-1477.
[6]职利,周怀营.1TO薄膜的制备方法与应用[J].桂林电子工业学院学报,2004,24(6),54.
[7]H. Kim, R.C.Y. Auyeung and A. Pique. Transparent conducting F-doped SnO2 thin films grown by pulsed laser deposition[J]. Thin solid films,2008,516(15):5052-5056.
[8]吴洋,王燕等.透明导电薄膜的应用与进展[J].稀有金属,30(2006),08.
[9]韦美琴,溶胶-凝胶法研制ZAO透明导电薄膜[D].芜湖：安徽工程科技学院,2007.06.
[10]李世涛,乔学亮,陈建国.透明导电薄膜的研究现状及应用[J].激光与光电子学进展,2003,40(7)：53-59.
[11]Kenji Nomura,Hiromichi O., Kazushige Ueda, et al. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor[J].Science,2003,300(5623):1269-1272.
[12]Kwon Y,Li Y,Heo Y W,et al. Enhancement-mode thin film field effect transistor using phosphorus-doped (Zn,Mg)O channel [J]. Appl. Phys. Lett.,2004,84(14):2685-2687.
[13]M. Sakai, K. Seo, Y. Ohkawa, et al. Electron doping into the surface of SrTiO3 single crystal by using a field effect transistor structure having a polyvinyl alcohol gate insulator layer[J]. Thin Solid Films,2009,517(18):5502-5507.
[14]柯成恩,新型的“纸张”电子纸[J].印刷世界,2004,10：1.
[15]张化福,袁玉珍,刘汉法等.掺Al ZnO柔性透明导电薄膜研究进展[J].半导体技术,2008,33(6)：461-465.
[16]宋健全,刘正堂.红外增透膜系软件设计及应用[J].红外技术,2001,23(2)：1-5.
[17]Yutaka Furubayashi,Naoomi YamadaYet al. Transport properties of d-electron-based transparent conducting oxide:Anatase Ti1-xNbxO2 [J].J. Appl. Phys.101 (2007):093705.
[18]Yutaka Furubayashi,Taro Hitosugi,Tetsuya Hasegawa. Response to Comment on A transparent metal:Nb-doped anatase TiO2 [J]. Appl. Phys. Lett.86 (2005):252101.
[19]D. S. Ginley, C.Bright.Transport conducting oxide[J]. MRS Bull.25 (2000):15.
[20]K. Nomura, H. Ohta, K. Ueda et al.Thin-Film Transistor Fabricated in Single Crystalline Transparent Oxide Semiconductor[J].Science 300(2003):1269-1272.
[21]H. Z. Guo, L. F. Liu, Y. Y. Fei, et al. Optical properties of p-type In-doped SrTiO3 thin films[J].J. Appl. Phys.94(2003):4558.
[22]Zhenhua Zhou,Marek Zabeik,Petr LostakW,et al. Magnetic and transport properties of Sb2-xFexTe3 (0 [23]O.A.Marina,N.L.Canfield,J.W.Stevenson,Thermal elec-tricaland electrocatalytical proper ties of lanthanum-doped strontium titanate[J].Solid State Ionics,149(1-2),21(2002).
[24]H. F. Wang, Q. Z. Liu, F. Chen, et al. Transparent and conductive oxide films with the perovskite structure:La- and Sb-doped BaSnO3 [J].J. Appl. Phys.101 (2007):106105.
[25]J. Matsuno Y. Okimoto, et al. Variation of the Electronic Structure in Systematically Synthesized Sr2MO4 (M=Ti, V, Cr, Mn, and Co)[J].Phys. Rev. Lett.95 (2005):176404.
[26]J. N. Yun, Z. Y. Zhang, et al.First-principles study of structural stability and electronic structureof La-doped Sr1.9375La0.0625TiO3.96875[J].JOURNAL OF APPLIED PHYSICS 107 (2010):103711.
[27]贠江妮,钙钛矿型氧化物半导化掺杂与表面吸附光电特性的理论研究[D].西安：西北大学,2010.
[28]J. H. Haeni, C. D. Theis, et al. Epitaxial growth of the first five members of the Srn+1TinO3n+1 Ruddlesden-Popper homologous series[J]. Appl. Phys. Lett.78(2001)3292.
[29]E.Gutmann, A. A. Levin, et al. Oriented growth of Srn+1TinO3n+1 Ruddlesden-Popper phases inchemical solution deposited thin films[J].J. Solid State Chem.179 (2006): 1864.
[30]K. H. Lee, A. Ishizaki, S. W. Kim, et al. Preparation and thermoelectric properties of heavily Nb-doped SrO(SrTiO3)1 epitaxial films[J]. J. Appl.Phys.102,033702 (2007).
[31]N. Zhou, G. Chen, et al. Synthesis of SrO(SrTiO3)n (n= 1,2,1) compounds and electronic structure analysis[J].Mater. Res. Bull.43 (2008):2554.
[32]N. Zhou, G. Chen, H.J. Zhang, et al. Computational and experimental studies of optical absorption properties of perovskite-layered SrO(SrTiO3)n (n=1,2,...,∞)[J]. Journal of Alloys and Compounds.477 (2009) L17-L20.
[33]By Keisuke Shibuya, Regina Dittmann,Shaobo Mi, et al. Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films[J]. Adv. Mater.,22(2010), 411-414.
[34]C. J. Fennie and K. M. Rabe, Structural and dielectric properties of Sr2TiO4 from first principles[J].Phys. Rev. B,68 (2003):184111.
[35]H. Weng, Y. Kawazoe, et al. Electronic structure and optical properties of layered perovskites Sr2MO4 (M=Ti, V, Cr, and Mn):An ab initio study[J].Phys. Rev. B 74 (2006): 205112.
[36]H. Jeong, T. Kim et al. Hydrogen production by the photocatalytic overallwater splitting on NiO/Sr3Ti2O7:Effect of preparation method[J].Int. J. Hydrogen Energy.31 (2006): 1142.
[37]YUN Jiang-Ni, ZHANG Zhi-Yong, et al.Effect of In-Doping on Electronic Structure and Optical Properties of Sr2Ti04[J].CHIN. PHYS. LETT. Vol.26, No.6 (2009) 067102.
[38]J. H. Haeni, C. D. Theis,et al.Takeuchi, and X.-D. Xaing[J]. Appl. Phys. Lett.78(2001), 3292.
[39]Singh RK, Narayan J. Pulsed-Laser Evaporation Technique for Deposition of Thin Films Phtsics and Theoretical Mode[J].J.Phys.Rav.B,199041(13)8843-8859.
[40]王萍,解廷月等.脉冲激光沉积技术[J].山西大同大学学报,2008,4(24),8.
[42]Willmott. P R, Huber J R. Pulsed laser vaporization and deposition[J].Rev Mod Phys,2000,72:315-328.
[43]李春花,娄彦良,郭文华.溶胶共沉淀法制备ZrO2超细粉末的工艺研究[J].功能材料,1997,28(2).
[44]康红兰,CuX (X=Br,I)的电沉积制备及形貌调控研究[D].杭州：浙江大学,2008.
[45]刘彦松,王连卫.用PLD法制备声表面波器件用ZnO薄膜[J].功能材料,2001,32(1)：78-81.
[46]宋继芳,溶胶-凝胶技术的研究进展[J].无机盐工业,11(37),2005.
[47]周英,溶胶-凝胶法制备Zno薄膜[D].成都：电子科技大学,2005.
[48]曾凡强,溶胶-凝胶法制备ZnO:(AI,La)透明导电薄膜的微观结构和光电性能的研究[D].北京：北京化工大学,2008.
[49]施云斌,溶胶-凝胶法制备钦酸银铅纳米晶及TPC器件[D].西安：西北大学,2006.
[50]洪广言,无机固体化学[M].北京：科学出版社,2002,38-39.
[51]张立德,纳米材料和纳米结构[M].北京：化学工业出版社,2003.
[52]杨南如,余桂郁.溶胶-凝胶法的基本原理与过程[J].硅酸盐通报,1993(2)：56-63.
[53]王训,纳米氧化镁制备工艺研究[D].西安：西北大学,2001.
[54]王珊珊,GaN材料的溶胶凝胶法制备及其团簇结构的研究[D].西安：西北大学,2008.
[55]李明杰,CeO<2>纳米颗粒的制备及室温铁磁性研究[D].兰州：兰州大学,2009.
[56]张丽,硅酸盐长余辉材料的制备及研究[D].南昌：南昌大学,2007.
[57]王晋,溶胶-凝胶法制备纳米钛酸锶材料及双功能器件[D].西安；西北大学,2002.
[58]王娟,李晨,徐博.溶胶-凝胶法的基本原理、发展及应用现状[J].化学工业与工程,26(3),2009.
[59]其春,孙传敏.矿物材料精细加工工程学[M].成都：四川科学技术出版社,1998.228-230.
[60]洪亮,余桂郁,杨如.Sol-Gel工艺制备无支撑γ-Al2O3[J].硅酸盐通报,1994(1)：26-29.
[61]宋晓岚,叶昌,余海湖.无机材料学工艺[M].冶金工业出版社,2007,09：508-509.
[62]李恩求,微波调谐钛酸锶钡薄膜及其新型掺杂系列薄膜的性能研究[D].成都：电子科技大学,2008.
[63]范敏,溶胶-凝胶法制备SrTiO3电容-电压双功能薄膜[D].西安：西北大学,2006.
[64]廖家轩,王洪全等,改进Sol-Gel法制备Y掺杂BST薄膜表面结构及介电性能研究[J].无机材料学报,2(24),2009.
[65]甘国友,郭玉忠,苏云生.溶胶—凝胶法薄膜制备工艺及其应用[J].昆明：昆明理工大学学报,1997,22(1)：142-145.
[66]黄正银,溶胶-凝胶法制备Nb-SrTiO<3>和LaNiO<3>铁电电薄膜[D].成都：西南交通大学,2009.
[67]甘国友,郭玉忠,苏云生.溶胶—凝胶法薄膜制备工艺及其应用[J].昆明理工大学 学报,1997,22(1)：142-145.
[68]周冰,表面等离激元增加薄膜光吸收及发光效率研究[D].杭州：浙江大学,2010.
[69]蒋然,Hf基高k材料的物性表征[D].兰州：兰州大学,2007.
[70]潘孝军,GaN基光电子材料的制备与性能研究[D].兰州：兰州大学,2008.
[71]T.R.N. Kutty and Abanti Nag.ole of interface states associated with transitional nanophase precipitates in the photoluminescence enhancement of SrTiO3:Pr3+,Al3+[J]. J.Mater.Chem.13 (2003),2271-2278.
[72]刘晋伟,超声波解堵深度试验研究[D].北京：中国石油大学,2009.
[73]费德君,化工实验研究方法及技术[M].北京：化学工业出版社,2008.
[74]S. Tan, S. Yue, Y.H. Zhang, Jahn-Teller distortion induced by Mg/Zn substitution on Mn sitesin the perovskite manganites [J]. Physics Letters,A 319 (2003) 530-538.
[75]Weng shi fu,Fourier Transform Inform spectrometer[M].Chemical Industry Press,7(262), 2005.
[76]中国科学院吉林物理所,中国科学技术大学”固体发光”编写组,固体发光1976.
[77]莫志深、张宏放,晶态聚合物结构和X射线衍射[M].北京：科学出版社,2003,350.
[78]LEE J H, PARK B O. Transparent conducting ZnO:Al, In and Sn thin films deposited by the sol-gel method [J]. Thin Solid Films,2003,426:94-99.
[79]张佳,廖家轩等,PVP添加剂改善溶胶-凝胶法制备BST薄膜表面结构及介电性能[J].硅酸盐通报,28(2009).
[80]陈学龙,Sr2MO4单晶的第一性原理研究[D].济南：山东大学,2008,05.
[81]张德恒,透明导电薄膜中光吸收边的移动[J].半导体杂志,1998,23(3)：34-43.
[82]Burstein E. Anomalous Optical Absorption Limit in InSb[J].Phys.Rev.1954,93:632-633.
[83]Musat V,Teixeira B,Fortunato E,et al.Al-doped ZnO thin films by sol-gel method[J].Surf. Coatings Technol.,2004,(3):659-662.
[84]邓志兵,溶胶-凝胶法制备ATO透明导电薄膜的光电性质[D].武汉：华中科技大学,2006,03.
[85]王黎,导电纳米颗粒/ATO 透明导电薄膜的研究[D].北京：中国建筑材料科学研究院,2005.
[2]Klaus Ellmer and Rainald Mientus. Carrier transport in polycrystalline transparent conductive oxides:A comparative study of zinc oxide and indium oxide[J]. Thin solid films,2008,516(14):4620-4627.
[3]Y. Hirose, N. Yamada, S. Nakao, et al. Large Electron Mass Anisotropy in a d-Electron-Based Transparent ConductingOxide:Nb-Doped Anatase TiO2 Epitaxial Films, Phys. Rev. B,79 [16] 165108,5pp(2009).
[4]陶然,太阳能电池发电—前途无量的市场[N].电子产品世界,2009,03.
[5]Tadatsugu Minami and Toshihiro Miyata.Present status and future prospects for develop ment of non- or reduced-indium transparent conductingoxide thin films[J]. Thin Solid Films.2008,517(4):1474-1477.
[6]职利,周怀营.1TO薄膜的制备方法与应用[J].桂林电子工业学院学报,2004,24(6),54.
[7]H. Kim, R.C.Y. Auyeung and A. Pique. Transparent conducting F-doped SnO2 thin films grown by pulsed laser deposition[J]. Thin solid films,2008,516(15):5052-5056.
[8]吴洋,王燕等.透明导电薄膜的应用与进展[J].稀有金属,30(2006),08.
[9]韦美琴,溶胶-凝胶法研制ZAO透明导电薄膜[D].芜湖：安徽工程科技学院,2007.06.
[10]李世涛,乔学亮,陈建国.透明导电薄膜的研究现状及应用[J].激光与光电子学进展,2003,40(7)：53-59.
[11]Kenji Nomura,Hiromichi O., Kazushige Ueda, et al. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor[J].Science,2003,300(5623):1269-1272.
[12]Kwon Y,Li Y,Heo Y W,et al. Enhancement-mode thin film field effect transistor using phosphorus-doped (Zn,Mg)O channel [J]. Appl. Phys. Lett.,2004,84(14):2685-2687.
[13]M. Sakai, K. Seo, Y. Ohkawa, et al. Electron doping into the surface of SrTiO3 single crystal by using a field effect transistor structure having a polyvinyl alcohol gate insulator layer[J]. Thin Solid Films,2009,517(18):5502-5507.
[14]柯成恩,新型的“纸张”电子纸[J].印刷世界,2004,10：1.
[15]张化福,袁玉珍,刘汉法等.掺Al ZnO柔性透明导电薄膜研究进展[J].半导体技术,2008,33(6)：461-465.
[16]宋健全,刘正堂.红外增透膜系软件设计及应用[J].红外技术,2001,23(2)：1-5.
[17]Yutaka Furubayashi,Naoomi YamadaYet al. Transport properties of d-electron-based transparent conducting oxide:Anatase Ti1-xNbxO2 [J].J. Appl. Phys.101 (2007):093705.
[18]Yutaka Furubayashi,Taro Hitosugi,Tetsuya Hasegawa. Response to Comment on A transparent metal:Nb-doped anatase TiO2 [J]. Appl. Phys. Lett.86 (2005):252101.
[19]D. S. Ginley, C.Bright.Transport conducting oxide[J]. MRS Bull.25 (2000):15.
[20]K. Nomura, H. Ohta, K. Ueda et al.Thin-Film Transistor Fabricated in Single Crystalline Transparent Oxide Semiconductor[J].Science 300(2003):1269-1272.
[21]H. Z. Guo, L. F. Liu, Y. Y. Fei, et al. Optical properties of p-type In-doped SrTiO3 thin films[J].J. Appl. Phys.94(2003):4558.
[22]Zhenhua Zhou,Marek Zabeik,Petr LostakW,et al. Magnetic and transport properties of Sb2-xFexTe3 (0
[24]H. F. Wang, Q. Z. Liu, F. Chen, et al. Transparent and conductive oxide films with the perovskite structure:La- and Sb-doped BaSnO3 [J].J. Appl. Phys.101 (2007):106105.
[25]J. Matsuno Y. Okimoto, et al. Variation of the Electronic Structure in Systematically Synthesized Sr2MO4 (M=Ti, V, Cr, Mn, and Co)[J].Phys. Rev. Lett.95 (2005):176404.
[26]J. N. Yun, Z. Y. Zhang, et al.First-principles study of structural stability and electronic structureof La-doped Sr1.9375La0.0625TiO3.96875[J].JOURNAL OF APPLIED PHYSICS 107 (2010):103711.
[27]贠江妮,钙钛矿型氧化物半导化掺杂与表面吸附光电特性的理论研究[D].西安：西北大学,2010.
[28]J. H. Haeni, C. D. Theis, et al. Epitaxial growth of the first five members of the Srn+1TinO3n+1 Ruddlesden-Popper homologous series[J]. Appl. Phys. Lett.78(2001)3292.
[29]E.Gutmann, A. A. Levin, et al. Oriented growth of Srn+1TinO3n+1 Ruddlesden-Popper phases inchemical solution deposited thin films[J].J. Solid State Chem.179 (2006): 1864.
[30]K. H. Lee, A. Ishizaki, S. W. Kim, et al. Preparation and thermoelectric properties of heavily Nb-doped SrO(SrTiO3)1 epitaxial films[J]. J. Appl.Phys.102,033702 (2007).
[31]N. Zhou, G. Chen, et al. Synthesis of SrO(SrTiO3)n (n= 1,2,1) compounds and electronic structure analysis[J].Mater. Res. Bull.43 (2008):2554.
[32]N. Zhou, G. Chen, H.J. Zhang, et al. Computational and experimental studies of optical absorption properties of perovskite-layered SrO(SrTiO3)n (n=1,2,...,∞)[J]. Journal of Alloys and Compounds.477 (2009) L17-L20.
[33]By Keisuke Shibuya, Regina Dittmann,Shaobo Mi, et al. Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films[J]. Adv. Mater.,22(2010), 411-414.
[34]C. J. Fennie and K. M. Rabe, Structural and dielectric properties of Sr2TiO4 from first principles[J].Phys. Rev. B,68 (2003):184111.
[35]H. Weng, Y. Kawazoe, et al. Electronic structure and optical properties of layered perovskites Sr2MO4 (M=Ti, V, Cr, and Mn):An ab initio study[J].Phys. Rev. B 74 (2006): 205112.
[36]H. Jeong, T. Kim et al. Hydrogen production by the photocatalytic overallwater splitting on NiO/Sr3Ti2O7:Effect of preparation method[J].Int. J. Hydrogen Energy.31 (2006): 1142.
[37]YUN Jiang-Ni, ZHANG Zhi-Yong, et al.Effect of In-Doping on Electronic Structure and Optical Properties of Sr2Ti04[J].CHIN. PHYS. LETT. Vol.26, No.6 (2009) 067102.
[38]J. H. Haeni, C. D. Theis,et al.Takeuchi, and X.-D. Xaing[J]. Appl. Phys. Lett.78(2001), 3292.
[39]Singh RK, Narayan J. Pulsed-Laser Evaporation Technique for Deposition of Thin Films Phtsics and Theoretical Mode[J].J.Phys.Rav.B,199041(13)8843-8859.
[40]王萍,解廷月等.脉冲激光沉积技术[J].山西大同大学学报,2008,4(24),8.
[42]Willmott. P R, Huber J R. Pulsed laser vaporization and deposition[J].Rev Mod Phys,2000,72:315-328.
[43]李春花,娄彦良,郭文华.溶胶共沉淀法制备ZrO2超细粉末的工艺研究[J].功能材料,1997,28(2).
[44]康红兰,CuX (X=Br,I)的电沉积制备及形貌调控研究[D].杭州：浙江大学,2008.
[45]刘彦松,王连卫.用PLD法制备声表面波器件用ZnO薄膜[J].功能材料,2001,32(1)：78-81.
[46]宋继芳,溶胶-凝胶技术的研究进展[J].无机盐工业,11(37),2005.
[47]周英,溶胶-凝胶法制备Zno薄膜[D].成都：电子科技大学,2005.
[48]曾凡强,溶胶-凝胶法制备ZnO:(AI,La)透明导电薄膜的微观结构和光电性能的研究[D].北京：北京化工大学,2008.
[49]施云斌,溶胶-凝胶法制备钦酸银铅纳米晶及TPC器件[D].西安：西北大学,2006.
[50]洪广言,无机固体化学[M].北京：科学出版社,2002,38-39.
[51]张立德,纳米材料和纳米结构[M].北京：化学工业出版社,2003.
[52]杨南如,余桂郁.溶胶-凝胶法的基本原理与过程[J].硅酸盐通报,1993(2)：56-63.
[53]王训,纳米氧化镁制备工艺研究[D].西安：西北大学,2001.
[54]王珊珊,GaN材料的溶胶凝胶法制备及其团簇结构的研究[D].西安：西北大学,2008.
[55]李明杰,CeO<2>纳米颗粒的制备及室温铁磁性研究[D].兰州：兰州大学,2009.
[56]张丽,硅酸盐长余辉材料的制备及研究[D].南昌：南昌大学,2007.
[57]王晋,溶胶-凝胶法制备纳米钛酸锶材料及双功能器件[D].西安；西北大学,2002.
[58]王娟,李晨,徐博.溶胶-凝胶法的基本原理、发展及应用现状[J].化学工业与工程,26(3),2009.
[59]其春,孙传敏.矿物材料精细加工工程学[M].成都：四川科学技术出版社,1998.228-230.
[60]洪亮,余桂郁,杨如.Sol-Gel工艺制备无支撑γ-Al2O3[J].硅酸盐通报,1994(1)：26-29.
[61]宋晓岚,叶昌,余海湖.无机材料学工艺[M].冶金工业出版社,2007,09：508-509.
[62]李恩求,微波调谐钛酸锶钡薄膜及其新型掺杂系列薄膜的性能研究[D].成都：电子科技大学,2008.
[63]范敏,溶胶-凝胶法制备SrTiO3电容-电压双功能薄膜[D].西安：西北大学,2006.
[64]廖家轩,王洪全等,改进Sol-Gel法制备Y掺杂BST薄膜表面结构及介电性能研究[J].无机材料学报,2(24),2009.
[65]甘国友,郭玉忠,苏云生.溶胶—凝胶法薄膜制备工艺及其应用[J].昆明：昆明理工大学学报,1997,22(1)：142-145.
[66]黄正银,溶胶-凝胶法制备Nb-SrTiO<3>和LaNiO<3>铁电电薄膜[D].成都：西南交通大学,2009.
[67]甘国友,郭玉忠,苏云生.溶胶—凝胶法薄膜制备工艺及其应用[J].昆明理工大学 学报,1997,22(1)：142-145.
[68]周冰,表面等离激元增加薄膜光吸收及发光效率研究[D].杭州：浙江大学,2010.
[69]蒋然,Hf基高k材料的物性表征[D].兰州：兰州大学,2007.
[70]潘孝军,GaN基光电子材料的制备与性能研究[D].兰州：兰州大学,2008.
[71]T.R.N. Kutty and Abanti Nag.ole of interface states associated with transitional nanophase precipitates in the photoluminescence enhancement of SrTiO3:Pr3+,Al3+[J]. J.Mater.Chem.13 (2003),2271-2278.
[72]刘晋伟,超声波解堵深度试验研究[D].北京：中国石油大学,2009.
[73]费德君,化工实验研究方法及技术[M].北京：化学工业出版社,2008.
[74]S. Tan, S. Yue, Y.H. Zhang, Jahn-Teller distortion induced by Mg/Zn substitution on Mn sitesin the perovskite manganites [J]. Physics Letters,A 319 (2003) 530-538.
[75]Weng shi fu,Fourier Transform Inform spectrometer[M].Chemical Industry Press,7(262), 2005.
[76]中国科学院吉林物理所,中国科学技术大学”固体发光”编写组,固体发光1976.
[77]莫志深、张宏放,晶态聚合物结构和X射线衍射[M].北京：科学出版社,2003,350.
[78]LEE J H, PARK B O. Transparent conducting ZnO:Al, In and Sn thin films deposited by the sol-gel method [J]. Thin Solid Films,2003,426:94-99.
[79]张佳,廖家轩等,PVP添加剂改善溶胶-凝胶法制备BST薄膜表面结构及介电性能[J].硅酸盐通报,28(2009).
[80]陈学龙,Sr2MO4单晶的第一性原理研究[D].济南：山东大学,2008,05.
[81]张德恒,透明导电薄膜中光吸收边的移动[J].半导体杂志,1998,23(3)：34-43.
[82]Burstein E. Anomalous Optical Absorption Limit in InSb[J].Phys.Rev.1954,93:632-633.
[83]Musat V,Teixeira B,Fortunato E,et al.Al-doped ZnO thin films by sol-gel method[J].Surf. Coatings Technol.,2004,(3):659-662.
[84]邓志兵,溶胶-凝胶法制备ATO透明导电薄膜的光电性质[D].武汉：华中科技大学,2006,03.
[85]王黎,导电纳米颗粒/ATO 透明导电薄膜的研究[D].北京：中国建筑材料科学研究院,2005.