FBAR器件模型和若干应用技术的研究
摘要
随着无线通信技术的不断发展,促使无线射频终端趋于小型化、集成化设计。与传统介质滤波器和声表面波滤波器技术相比,新型薄膜体声波谐振器(Thin Film Bulk Acoustic Resonator, FBAR)具有工作频率高、插入损耗小、带外抑制大、温度系数低、Q值高、体积小、且可与标准CMOS工艺相兼容等优点,有广阔的应用前景,正越来越受到国内外学术界和业界的关注。
本文研究了FBAR器件模型和FBAR技术的应用两大方面内容,具体对FBAR建模和制备、FBAR滤波器设计和FBAR传感信号采集芯片设计等三部分内容进行了分析研究,主要研究成果如下：
1.从FBAR的Mason等效电路模型出发,建立了ADS仿真模型库；基于等效复介电常数建立了FBAR的HFSS三维电磁场仿真模型,实现了FBAR声场和电磁场的协仿真。将两者的仿真结果进行比较,进一步验证了模型的准确性和可靠性。基于已建立的模型,设计制备了不同结构的纵波和剪切模式FBAR,并对样品进行了测试。测试结果表明,FBAR的Q值最高可达1350左右。
2.设计了用于GSM、PHS、WCDMA通信终端的FBAR带通滤波器,以及用于MIMO终端的多工器,仿真结果表明,滤波器和多工器有着优良的滤波特性,完全可满足目前各通信终端的要求；研究分析了FBAR堆叠滤波器、FBAR带阻滤波器、剪切模式FBAR滤波器的原理和设计方法,给出了相应的设计实例,并提出了一种具有隔离层的多耦合型滤波器；对包括寄生、带宽、带外抑制、功率容量和温度补偿等FBAR滤波器相关参数进行了研究,并提出了多种提高FBAR滤波器功率容量的方法。
3.设计、流片并测试了FBAR传感器信号采集芯片,测试结果表明,芯片实现了传感信号的处理功能,偶尔因为计数同步问题出现±1KHz的频率误差。针对测试存在的问题对芯片进行改进设计,有效消除了芯片计数过程中存在的误差,并已在SMIC0.18μm工艺下进行第二次流片。
With the rapid development of wireless communication technology, the radio frequency terminals are becoming more miniaturized and integrated. Compared with the conventional di-electric filter and SAW filter, thin film bulk acoustic resonator (FBAR) has high operating fre-quency, low insertion loss, high outband rejection, good temperature coefficient, high Q, small size, and compatible process with CMOS technology. Thus, this technology has widely applica-tion prospects.
Three parts are researched in this paper, including the modeling and fabrication of FBAR, design of FBAR filter, and design of FBAR sensor signal processing chip. The main achieve-ments are listed as follows:
1. Based on FBAR Mason model, the ADS simulation library is built up. And the HFSS three-dimensional electromagnetic field simulation model is also applied to achieve acous-tic-electromagnetic field co-simulation based on equivalent complex dielectric constant. The simulation results of these two models further verify the accuracy and reliability of the models. Based on the established model, different structures of longitudinal and shear mode FBAR are designed and fabricated, and the samples are tested. Test results show that FBAR has a Q factor about 1350.
2. Designed the FBAR bandpass filters for GSM, PHS, and WCDMA terminal, respectively. And a multiplexer for MIMO terminal is also designed. Simulation results show that the filters and multiplexer have excellent filter characteristics which can meet the requirements of current communication terminals. Then we research the theory and design method of FBAR stacked filter, stopband filter, shear mode FBAR filter, and the corresponding filter design example is given. Moreover, a method for multipled coupled resonator filters with an isolation layer is proposed. We also analysis some FBAR filter parameters, including the parasitic parameters, bandwidth, out-band rejection, power capacity and temperature com-pensation. What's more, some new methods are proposed to improve the power capacity of FBAR or FBAR filter.
3. Completed the design, tape out and test of FBAR sensor signal processing chip. Test results show that the function of sensor signal acquisition is normal except±1KHz frequency error. According to problems in the test, we improve the design of the chip. Thereby, the errors that exist in the counting process are eliminated effectively. And the improved chip is man-ufacturing again in SMIC 0.18μm process.
本文研究了FBAR器件模型和FBAR技术的应用两大方面内容,具体对FBAR建模和制备、FBAR滤波器设计和FBAR传感信号采集芯片设计等三部分内容进行了分析研究,主要研究成果如下：
1.从FBAR的Mason等效电路模型出发,建立了ADS仿真模型库；基于等效复介电常数建立了FBAR的HFSS三维电磁场仿真模型,实现了FBAR声场和电磁场的协仿真。将两者的仿真结果进行比较,进一步验证了模型的准确性和可靠性。基于已建立的模型,设计制备了不同结构的纵波和剪切模式FBAR,并对样品进行了测试。测试结果表明,FBAR的Q值最高可达1350左右。
2.设计了用于GSM、PHS、WCDMA通信终端的FBAR带通滤波器,以及用于MIMO终端的多工器,仿真结果表明,滤波器和多工器有着优良的滤波特性,完全可满足目前各通信终端的要求；研究分析了FBAR堆叠滤波器、FBAR带阻滤波器、剪切模式FBAR滤波器的原理和设计方法,给出了相应的设计实例,并提出了一种具有隔离层的多耦合型滤波器；对包括寄生、带宽、带外抑制、功率容量和温度补偿等FBAR滤波器相关参数进行了研究,并提出了多种提高FBAR滤波器功率容量的方法。
3.设计、流片并测试了FBAR传感器信号采集芯片,测试结果表明,芯片实现了传感信号的处理功能,偶尔因为计数同步问题出现±1KHz的频率误差。针对测试存在的问题对芯片进行改进设计,有效消除了芯片计数过程中存在的误差,并已在SMIC0.18μm工艺下进行第二次流片。
With the rapid development of wireless communication technology, the radio frequency terminals are becoming more miniaturized and integrated. Compared with the conventional di-electric filter and SAW filter, thin film bulk acoustic resonator (FBAR) has high operating fre-quency, low insertion loss, high outband rejection, good temperature coefficient, high Q, small size, and compatible process with CMOS technology. Thus, this technology has widely applica-tion prospects.
Three parts are researched in this paper, including the modeling and fabrication of FBAR, design of FBAR filter, and design of FBAR sensor signal processing chip. The main achieve-ments are listed as follows:
1. Based on FBAR Mason model, the ADS simulation library is built up. And the HFSS three-dimensional electromagnetic field simulation model is also applied to achieve acous-tic-electromagnetic field co-simulation based on equivalent complex dielectric constant. The simulation results of these two models further verify the accuracy and reliability of the models. Based on the established model, different structures of longitudinal and shear mode FBAR are designed and fabricated, and the samples are tested. Test results show that FBAR has a Q factor about 1350.
2. Designed the FBAR bandpass filters for GSM, PHS, and WCDMA terminal, respectively. And a multiplexer for MIMO terminal is also designed. Simulation results show that the filters and multiplexer have excellent filter characteristics which can meet the requirements of current communication terminals. Then we research the theory and design method of FBAR stacked filter, stopband filter, shear mode FBAR filter, and the corresponding filter design example is given. Moreover, a method for multipled coupled resonator filters with an isolation layer is proposed. We also analysis some FBAR filter parameters, including the parasitic parameters, bandwidth, out-band rejection, power capacity and temperature com-pensation. What's more, some new methods are proposed to improve the power capacity of FBAR or FBAR filter.
3. Completed the design, tape out and test of FBAR sensor signal processing chip. Test results show that the function of sensor signal acquisition is normal except±1KHz frequency error. According to problems in the test, we improve the design of the chip. Thereby, the errors that exist in the counting process are eliminated effectively. And the improved chip is man-ufacturing again in SMIC 0.18μm process.
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