新结构低功耗IGBT的研究
|
摘要
本文对一种具有新型耐压层结构的IGBT做了详细论述。新结构用三重扩散的方法在n~-单晶片上引入了n~+缓冲层，仍然保留了NPT-IGBT中薄而轻掺杂p层和高载流子寿命的本质优点，同时又具有PT-IGBT中n~-／(n~+)双层复合的薄耐压层(即薄基区)的优点。它不是现有的NPT型，也不是现有的PT型。命名为：低功耗IGBT(LOW POWER LOSS IGBT——LPL—IGBT)。仿真结果和实际的样管制造结果均证实了这种新结构IGBT的优越性。它的总损耗(通态损耗与开关损耗之和)低于现有NPT-IGBT，而其余性能(耐压、电流密度、安全工作区、抗过流、过压能力等)和制造成本与现有NPT-IGBT相同。它将IGBT的性能推向了一个新的水平，具有更大的应用潜力。在功率开关器件这个大家庭里，IGBT的地位将更加显赫。
A new structure of IGBT has been discussed in detail in this thesis. In the new structure, a n+ buffer layer is introduced into the bulk silicon substrate with a triple-diffusion process..The new structure has two features :one is the feature of NPT-IGBT : the thin and lightly-doped p+ layer and the high lifetimes of the carriers; the other is the feature of PT-IGBT :n7n+structure which can make the n" region very thin . The new structure is neither the NPT-IGBT nor the PT-IGBT . We call it :LOW
POWER LOSS IGBT------LPL-IGBT . Experimenal results and simulation
results have shown that this new structure provides a better performance than that of the conventional NPT structure. Its power loss is lower than NPT-IGBT and other parameters are the same as those of NPT-IGBT. LPL-IGBT has reached a new level and has a bright futuer in the applications. It will have a prominent status in the family of power devices.
A new structure of IGBT has been discussed in detail in this thesis. In the new structure, a n+ buffer layer is introduced into the bulk silicon substrate with a triple-diffusion process..The new structure has two features :one is the feature of NPT-IGBT : the thin and lightly-doped p+ layer and the high lifetimes of the carriers; the other is the feature of PT-IGBT :n7n+structure which can make the n" region very thin . The new structure is neither the NPT-IGBT nor the PT-IGBT . We call it :LOW
POWER LOSS IGBT------LPL-IGBT . Experimenal results and simulation
results have shown that this new structure provides a better performance than that of the conventional NPT structure. Its power loss is lower than NPT-IGBT and other parameters are the same as those of NPT-IGBT. LPL-IGBT has reached a new level and has a bright futuer in the applications. It will have a prominent status in the family of power devices.
引文
1 吴雅丽．电力电子器件的发展及其在机车牵引领域的应用．内燃机．1999年12月．第12期：pp1～4
2 张立．赵永健 现代电力电子技术——器件、电路及应用．科学出版社．1992
3 童宗鉴．电力半导体器件的发展及现状．机车电传动．1996年第4期．pp1
4 B.J. Baliga, M. S. Adler, P. V. Gray, R. Love, and N. Zommer, "The insulated gate rectifier (IGR): A new power switching device", IEDM Tech Dig., Paper 10.6, pp. 264-267
5 B.J. Baliga, M. S. Adler, R. P. Love, P. V. Gray, and N. Zommer, "The insulated gate transistor: A new three terminal MOS controlled bipolar power device", IEEE Trans. on Electron Devices, Vol. ED-31, No. 6, June, 1984.
6 T. Laska, M. Munzer, F. Pfirsch, C. Schaeffer, P. Lschmidt, "The Field Stop IGBT (FSIGBT)—A New Power Device Concept with Great Improvement Potential", ISPSD'2000, 2000: pp. 355-358,
7 杨晶琦．电力电子器件原理与设计．国防工业出版社．1999．6．pp109～113
8 王可恕．绝缘栅双极晶体管(IGBT)．国外电子元器件．1995年第7期．pp38～40
9 B.J. Baliga, Modern Power Devices, Wiley, 1987 .pp. 354.
10 T. Laska,J.Fugger, F. Hirler, W. Scholz Optimizing the Vertical IGBT Structure-The NPT Concept as the Most Electrically Ideal Solution for a 1200v-IGBT .IEEE 1996.pp 169～172
11 A. Nakagawa, K. Watanabe, Y. Yamaguchi, H. Ohashi, and K. Furukawa, "1800V bipolar-mode MOSFET's: a first application of silicon wafer direct bonding (SBD) technique to a power device", IEDM Tech. Dig. 1986: pp. 122-125.
12 G. Miller, J. sack, "A new concept for a non punch through IGBT with MOSFET like switching characteristics", IEEE PESC, Record 1, 1989: pp. 21-25.
13 周文定．引入注目的新型IGBT：NPT—IGBT．电焊机．2000(4)．Vol．30 pp37～40
14 张屏英．周佑漠．晶体管原理．西安：西安交通大学出版社，1985
15 Y. Takahashi et al, "Experimental investigations of 2.5 kV-100 A PT type and NPT type IGBTs, ISPSD'95, 1995: pp. 70-74.
16 V. Axelrad ,R.Klein Electrothermal Simulation of an IGBT ISPSD'92 TOKYO pp.158～159
17 庄同曾．集成电路制造技术——原理与实践．．电子工业出版社．1987
18 陆秀洪．新结构低功耗IGBT的研究．北京工业大学硕士论文．2001：39～40
19 陈立力．高压功率器件结终端的仿真研究．北京工业大学硕士论文．2000：30～40
20 T.Takeda,M.Kuwahara,S.Kamata 1200V Trench Gate NPT-IGBT(IEGT) with Excellent Low ON-State Voltage ISPSD'98 Kyoto pp75~79
21 李如春，陈去非，陈启秀，生产IGBT的一种工艺--三重扩散，固态电子学研究与进展1996． 2． Vol.16． No.1． pp76
22 Francine Y.Robb .ADFET-A Simple Inexpensive Power Device .IEEE. 1996． pp37
23 T.Laska,M.Matschitsch,W.Scholz .ULTRATHIN-WAFER TECHNOLOGY FOR A NEW 600V-NPT-IGBT.IEEE.1997． pp 361-364
24 Darryl Burns,Ivana Deram,James Morgan NPT-IGBT-Optimizing for Manufacturability IEEE 1996 pp331-334
25 王彩琳，平面型电力半导体器件击穿电压的优化设计，半导体技术，1997，12，第六期.pp40-44
26 Sameer Pendharkar,Malay Trivedi,Krishna Shenai Electrothermal Simulations in Punchthrough and Nonpunchthrough IGBT's IEEE TRANSACTIONS ON ELECTRON DEVICES.VOL45． no 10 OCT.1998 pp2222~2230
27 E.STEFANOV,G.CHARITAT,N.NOLHIER A FAST AND EFFICIENT SIMULATION TOOL FOR THE VOLTAGE HANDLING CAPABILITH OF HIGHVOLTAGEDEVICESMaterialResearchSocietyMat.Res.Soc.Symp.Proc.VO L.483 1998 pp 363-358
28 T.Laska,M.Matschitsch,W.Scholz ULTRATHIN-WAFER TECHNOLOGY FOR A NEW 600V-NPT-IGBT IEEE 1997 pp361~364
29 Chong-Man Yun Doo-Young Kim,Byung-Hoon Lee,A Self-Aligned Latch-Free IGBT with Sidewall Diffused N+ Emitter ISPSD'95 pp 196-200
30 Shankar Sawant and B.Jayant Baliga Impact of VLSI Design Rules on High Voltage (2000V) IGBTS/EST'S ISPSD'98 pp253~256
31 R.Hotz,F.Bauer,W.Fichtner On-state and Short Circuit Behaviour of High Voltage Trench Gate IGBTS in Comparison with Planar IGBTS ISPSD'95 Yokohama pp224~229
32 Kang-Deog Suh ,Soon-won Hong Kwyro LEE and Choong .AN ANALYSIS FOR POTENTIAL OF FLOATING GUARD RINGS.Solid State Electronics 1990． vol 33． no 9． pp 1125-1129
33 MEDICI version 1999． 4 User's Manual,2000．
34 Siemens公司产品手册: "Power Semiconductor IGBT Modules".
35 T.Laska,A.Porst,H.Brunner,W.kiffe,"A low loss/highly rugged IGBT-generation-based on a self aligned process with double implanted N/N+-emmitter",ISPSD'94,1994: pp.171-175．
36 T.Laska et al,"A 2000 V non-punchthrough IGBT with high ruggedness",Solid-State Electronics,vol.35,no.5,,1992: pp.681-685．
37 T.Laska,G.Miller,"A 2000 V non-punch-through-IGBT with dynamical properties like a 1000 V-IGBT",IEDM'90,1990: pp.807-810．
38 T.laska,F.Pfirsch,F.Hirler,J.Niedermeyr,C.Schaffer,T.Schmidt,"1200V Trench IGBT study with Square short-circuit SOA",ISPSD'98,Kyoto,Japan,1998: pp.433-436．
39 K.D.Hobart,F.J.Kub,G.Dolny,M.Zafrani,J.M.Neilson,J.Gladish,C.Mclachlan,"Fabrication of a Double-Side IGBT by very low temperature wafer bonding",ISPSD'99,Toronto,Canada,,1999: pp.45-48．
40 D.Burns et al,"NPT-IGBT-optimizing for manufacturability",ISPSD'96,1996: pp. 331-334．
41 B.J.BALIGA,M.S.ADLER,P.V.GRAY Suppressing Latchup in Insulated Gate Transistors IEEE ELECTRON DEVICE LETTERS VOL.EDL 5,no 8 AUG.1984 pp323~325
2 张立．赵永健 现代电力电子技术——器件、电路及应用．科学出版社．1992
3 童宗鉴．电力半导体器件的发展及现状．机车电传动．1996年第4期．pp1
4 B.J. Baliga, M. S. Adler, P. V. Gray, R. Love, and N. Zommer, "The insulated gate rectifier (IGR): A new power switching device", IEDM Tech Dig., Paper 10.6, pp. 264-267
5 B.J. Baliga, M. S. Adler, R. P. Love, P. V. Gray, and N. Zommer, "The insulated gate transistor: A new three terminal MOS controlled bipolar power device", IEEE Trans. on Electron Devices, Vol. ED-31, No. 6, June, 1984.
6 T. Laska, M. Munzer, F. Pfirsch, C. Schaeffer, P. Lschmidt, "The Field Stop IGBT (FSIGBT)—A New Power Device Concept with Great Improvement Potential", ISPSD'2000, 2000: pp. 355-358,
7 杨晶琦．电力电子器件原理与设计．国防工业出版社．1999．6．pp109～113
8 王可恕．绝缘栅双极晶体管(IGBT)．国外电子元器件．1995年第7期．pp38～40
9 B.J. Baliga, Modern Power Devices, Wiley, 1987 .pp. 354.
10 T. Laska,J.Fugger, F. Hirler, W. Scholz Optimizing the Vertical IGBT Structure-The NPT Concept as the Most Electrically Ideal Solution for a 1200v-IGBT .IEEE 1996.pp 169～172
11 A. Nakagawa, K. Watanabe, Y. Yamaguchi, H. Ohashi, and K. Furukawa, "1800V bipolar-mode MOSFET's: a first application of silicon wafer direct bonding (SBD) technique to a power device", IEDM Tech. Dig. 1986: pp. 122-125.
12 G. Miller, J. sack, "A new concept for a non punch through IGBT with MOSFET like switching characteristics", IEEE PESC, Record 1, 1989: pp. 21-25.
13 周文定．引入注目的新型IGBT：NPT—IGBT．电焊机．2000(4)．Vol．30 pp37～40
14 张屏英．周佑漠．晶体管原理．西安：西安交通大学出版社，1985
15 Y. Takahashi et al, "Experimental investigations of 2.5 kV-100 A PT type and NPT type IGBTs, ISPSD'95, 1995: pp. 70-74.
16 V. Axelrad ,R.Klein Electrothermal Simulation of an IGBT ISPSD'92 TOKYO pp.158～159
17 庄同曾．集成电路制造技术——原理与实践．．电子工业出版社．1987
18 陆秀洪．新结构低功耗IGBT的研究．北京工业大学硕士论文．2001：39～40
19 陈立力．高压功率器件结终端的仿真研究．北京工业大学硕士论文．2000：30～40
20 T.Takeda,M.Kuwahara,S.Kamata 1200V Trench Gate NPT-IGBT(IEGT) with Excellent Low ON-State Voltage ISPSD'98 Kyoto pp75~79
21 李如春，陈去非，陈启秀，生产IGBT的一种工艺--三重扩散，固态电子学研究与进展1996． 2． Vol.16． No.1． pp76
22 Francine Y.Robb .ADFET-A Simple Inexpensive Power Device .IEEE. 1996． pp37
23 T.Laska,M.Matschitsch,W.Scholz .ULTRATHIN-WAFER TECHNOLOGY FOR A NEW 600V-NPT-IGBT.IEEE.1997． pp 361-364
24 Darryl Burns,Ivana Deram,James Morgan NPT-IGBT-Optimizing for Manufacturability IEEE 1996 pp331-334
25 王彩琳，平面型电力半导体器件击穿电压的优化设计，半导体技术，1997，12，第六期.pp40-44
26 Sameer Pendharkar,Malay Trivedi,Krishna Shenai Electrothermal Simulations in Punchthrough and Nonpunchthrough IGBT's IEEE TRANSACTIONS ON ELECTRON DEVICES.VOL45． no 10 OCT.1998 pp2222~2230
27 E.STEFANOV,G.CHARITAT,N.NOLHIER A FAST AND EFFICIENT SIMULATION TOOL FOR THE VOLTAGE HANDLING CAPABILITH OF HIGHVOLTAGEDEVICESMaterialResearchSocietyMat.Res.Soc.Symp.Proc.VO L.483 1998 pp 363-358
28 T.Laska,M.Matschitsch,W.Scholz ULTRATHIN-WAFER TECHNOLOGY FOR A NEW 600V-NPT-IGBT IEEE 1997 pp361~364
29 Chong-Man Yun Doo-Young Kim,Byung-Hoon Lee,A Self-Aligned Latch-Free IGBT with Sidewall Diffused N+ Emitter ISPSD'95 pp 196-200
30 Shankar Sawant and B.Jayant Baliga Impact of VLSI Design Rules on High Voltage (2000V) IGBTS/EST'S ISPSD'98 pp253~256
31 R.Hotz,F.Bauer,W.Fichtner On-state and Short Circuit Behaviour of High Voltage Trench Gate IGBTS in Comparison with Planar IGBTS ISPSD'95 Yokohama pp224~229
32 Kang-Deog Suh ,Soon-won Hong Kwyro LEE and Choong .AN ANALYSIS FOR POTENTIAL OF FLOATING GUARD RINGS.Solid State Electronics 1990． vol 33． no 9． pp 1125-1129
33 MEDICI version 1999． 4 User's Manual,2000．
34 Siemens公司产品手册: "Power Semiconductor IGBT Modules".
35 T.Laska,A.Porst,H.Brunner,W.kiffe,"A low loss/highly rugged IGBT-generation-based on a self aligned process with double implanted N/N+-emmitter",ISPSD'94,1994: pp.171-175．
36 T.Laska et al,"A 2000 V non-punchthrough IGBT with high ruggedness",Solid-State Electronics,vol.35,no.5,,1992: pp.681-685．
37 T.Laska,G.Miller,"A 2000 V non-punch-through-IGBT with dynamical properties like a 1000 V-IGBT",IEDM'90,1990: pp.807-810．
38 T.laska,F.Pfirsch,F.Hirler,J.Niedermeyr,C.Schaffer,T.Schmidt,"1200V Trench IGBT study with Square short-circuit SOA",ISPSD'98,Kyoto,Japan,1998: pp.433-436．
39 K.D.Hobart,F.J.Kub,G.Dolny,M.Zafrani,J.M.Neilson,J.Gladish,C.Mclachlan,"Fabrication of a Double-Side IGBT by very low temperature wafer bonding",ISPSD'99,Toronto,Canada,,1999: pp.45-48．
40 D.Burns et al,"NPT-IGBT-optimizing for manufacturability",ISPSD'96,1996: pp. 331-334．
41 B.J.BALIGA,M.S.ADLER,P.V.GRAY Suppressing Latchup in Insulated Gate Transistors IEEE ELECTRON DEVICE LETTERS VOL.EDL 5,no 8 AUG.1984 pp323~325