MEMS电容式加速度传感器检测电路研究
摘要
电容式传感器是将被测量的非电量变化转换为电容变化量的一类传感器。集成电路和微电子机械系统设计与加工技术的迅猛发展,使得MEMS传感器的研究和应用得到了极大的发展。MEMS电容式传感器作为微电子机械系统研究和制造领域重要的分支,具有体积小、易集成、低成本、可靠性高等优点,广泛应用于航空航天、工业自动化、汽车安全气囊等领域。
本文分析了国内外传感器的典型形式,比较了各种MEMS电容测量电路的优缺点,针对MEMS电容式加速度传感器输出电容变化量小的特点,设计出了基于开关电容技术的电容检测电路系统及检测系统所需要的带隙基准电压源,自偏置基准电流源,振荡器等电路模块,并且对上述电路模块进行了优化。然后对各个模块和系统电路进行了仿真、修改、优化。证明了MEMS电容式加速度传感器检测电路系统的正确性和可行性。最后,介绍了Cadence版图设计和验证工具,并给出了MEMS电容式加速度传感器检测电路的版图设计和验证过程。
A capacitive sensor is the sensor that includes a variable capacitor sensor which varies its capacitance with changes in an environmental parameter. Along with the fast development of the design and manufacturing level of MEMS, the research and application of the MEMS sensor are greatly accelerated. As an important branch of the intellectualized microcomputer electrical system series, MEMS sensor has so many advantages, such as smaller in volume,reliability. At present, acceleration sensors are widely used in the field of navigation and aerospace, industry auto-mation, car airbag control and so on.
Typical signal processing circuits of micro capacitive sensors were analyzed in this study, and the characteristics of these circuits were compared.Because of the minimal output capacitor change of MEMS capacitive accelerometer, detecting circuit of MEMS capacitance based on the switched capacitor technology was selected. The bandgap voltage reference,self-biased current reference and relaxation oscillator modules were designed, and these basic units in analog integrated circuits were analyzed. Cadence layout design and validate tools were introduced and the layout design and validate process of the circuit was presented.
本文分析了国内外传感器的典型形式,比较了各种MEMS电容测量电路的优缺点,针对MEMS电容式加速度传感器输出电容变化量小的特点,设计出了基于开关电容技术的电容检测电路系统及检测系统所需要的带隙基准电压源,自偏置基准电流源,振荡器等电路模块,并且对上述电路模块进行了优化。然后对各个模块和系统电路进行了仿真、修改、优化。证明了MEMS电容式加速度传感器检测电路系统的正确性和可行性。最后,介绍了Cadence版图设计和验证工具,并给出了MEMS电容式加速度传感器检测电路的版图设计和验证过程。
A capacitive sensor is the sensor that includes a variable capacitor sensor which varies its capacitance with changes in an environmental parameter. Along with the fast development of the design and manufacturing level of MEMS, the research and application of the MEMS sensor are greatly accelerated. As an important branch of the intellectualized microcomputer electrical system series, MEMS sensor has so many advantages, such as smaller in volume,reliability. At present, acceleration sensors are widely used in the field of navigation and aerospace, industry auto-mation, car airbag control and so on.
Typical signal processing circuits of micro capacitive sensors were analyzed in this study, and the characteristics of these circuits were compared.Because of the minimal output capacitor change of MEMS capacitive accelerometer, detecting circuit of MEMS capacitance based on the switched capacitor technology was selected. The bandgap voltage reference,self-biased current reference and relaxation oscillator modules were designed, and these basic units in analog integrated circuits were analyzed. Cadence layout design and validate tools were introduced and the layout design and validate process of the circuit was presented.
引文
[1] Meydan T., Recent trends in linear and angular accelerometers, Sensors and Actuators, 1997, 4(59):43-50.
[2] Bernhard E., Boser and Roger T.. Surface Micromachined ccelerometer. IEEE JOURNAL OF SOLID-STATE CIRCUITS. 1996, 3, 3(1).
[3] Selvakumar Fayez, Najafi K.. A high sensitivity z-axis tensional silicon Accelerometer[J]. Electron Device Meeting, San Francisco, 1996:765-768.
[4] L.Zimmermann, Ebersohl, Berry J. P.. Airbag application:a microsystem including a silicon capacitive accelerometer. CMOS switched capacitor electronics and true self-test capability, 2000: 190-195.
[5] Roylance L.M.. A miniature integrated circuit accelerometer for biomedical Application.Ph.D.dissertation, Department of Electrical Engineering, Stanford University, Stanford, CA., 1997:47-80.
[6]王阳元. 2l世纪的微电子技术.世界科技研究与发展. 1999, 3.
[7]李志坚. 2l世纪微电子技术发展展望.科技导报. 1999, 3.
[8] Julian W. Gardner, Vijay Varadan. Awadelkarim,Micro sensors,MEMS and Smart Devices[M]. New York:Wiley Inc, 2001:259-260.
[9] Bao M.H. .Future of micro electromechanical systems(MEMS)[J]. Sensors and Actuators A, 1996:135-141.
[10]Huikai Xie and Gary K. Fedder. A CMOS Z-Axis Capacitive Accelerometer With Comb-Finger Sensing.The Thirteenth Annual International Conference on Micro Electro Mechanical Systems.23-27, Jan, 2000: 496-501.
[11]Seungbae Lee, Junseok Chae and Alan J.. Two-Dimensional Position Detection System With MEMS Accelerometers, Readout Circuitry, and Microprocessor for Paddles Mouse Applications. IEEE Transactions on Very Large Scale Integration(VLSI) Systems. 2005, 10, 13(10):1167-1178.
[12]Deyou Fang and Huikai Xie. A Low-Power Low-Noise Capacitive Sensing Amplifier for Integrated CMOS MEMS Inertial Sensors.
[13]Lynn M.,Roylance, James B.. A miniature integrated circuit accelerometer, Solid-State Circuits Conference. Digest of Technical Papers. IEEE International. Volume XXI. 1978, 2:220-221.
[14]Rob N., Candler, Thomas W..Fully Encapsulated Sub-Millimeter Accelerometers, Micro Electro Mechanical Systems. 18th IEE International Conference on 30 Jan.-3 Feb. 2005:347-350.
[15]Roylance L. M. and Angell J. B.. A batch—fabricated silicon accelerometer, IEEE Trans. Electron Devices. VOL. ED-26, 1999: 1911-1917.
[16]Tianhong Cui,Jing Wang.Polymer-Based Wide-Bandwidth and High—Sensitivity Micro machined Electron Tunneling Accelerometers Using Hot Embossing. Journal of Micro Electro Mechanical Systems, 2005,10,14(5): 895-902.
[17]Cheng—Hsien Liu and Thomas W. A High—Precision. wide—Bandwidth Micro machined Tunneling Accelerometer .Journal of Micro electro mechanical Systems. 2001,9,10(3): 425—433.
[18]Llobera,Buttgenbach S., Seidemann V.. Integrated Polymer Optical Accelerometer. IEEE Photonics Technology Letters. 2005, 6, 17(6):1262-1264.
[19]Ke-Min Liao, Rongshun Chen. A Novel Thermal-Bubble—Based Micro machined Accelerometer, Solid—State Sensors, Actuators and Microsystems.2005.Digest of Technical Papers . The13th International Conference on Volume 2005, 9:519-522.
[20]Sosnowski R.G., EugeneT,Butler W.F.. Rapid determination of single base mismatch Mutations in DNA hybrids by dieter electric field control.Pocr.Natl.Aacd.Sei.USA. 1997, 9, 4:1119-1123.
[21]Decennia AD, Wise K.D.. A Wireless Microsystem for the Remote Sensing of Pressure, Temperature, nd Relative Humidity [J]. Journal of Micro electro-mechanical Systems. 2005, 14(1):12-22.
[22]朱长纯,韩建强,刘君华.微机械传感器的现状与发展[J].电子元器件应用, 2003, 5(4):8-12.
[23]Junseok Chae,Haluk Kulah,Khalil Najafi:A Monolithic Three—Axis Micro-g Micro machined silicon Capacitive Accelerometer, Micro electro mechanical Systems.Journal of Volume 14,Issue 2,April, 2005:235-242.
[24]Dong Haifeng, Hao Yilong, Jia Yubin. Fabrication and Characterization of Tunneling Current of Anodic Bonded Dry—Etched MEMS Tunneling Accelerometer[J].半导体学报. 25(12):22-23.
[25]Apian Errant.Small Capacitance Measuring Circuit For Capacitive Sensors[M]. Institute of Technology Ladkrabang Chalongkrung Rd.Ladkrabang. Bankok. Thailand. 2001.
[26]Ashcan Sahrawi,Hussein Gossein.A high precision method for measuring very small capacitance changes[J]. Review of Scientific Instruments. University of Technology. 1999,(8):3483-3487.
[27]Preethich and rad M.G., Katsunori Hidak. A Simple Interface Circuit to MeasureVery Small Capacitance Changes in Capacitive sensors. Instrumentation and Measurement, IEEE(C). 2000:406-409.
[28]WQ Yang. Modeling of capacitance tomography sensors[J]. IEEE Proc. Sci. Meas. Techn01. 2003:200-214.
[29]李宝清,陆德仁,王魏源.变面积和变间距结构微机械加速度传感器.中国工程科学. 2002, 2.
[30]王文涛,耿增建.单轴硅微加速度计传感器的原理与电路设计.现代电子技术, 2005(14):92-94.
[31]宋飞,王欣,王奕松等.一种新型高灵敏度横向电容式硅微加速度计.纳米技术与精密工程. 2005, 3(4):283-289.
[32]Preethich and rad .M.G.,Katsunori Hidak. A Simple Interface Circuit to Measure Very Small Capacitance Changes in Capacitive sensors[J]. Instrumentation and Measurement, IEEE(C). 2000:406-409.
[33]毕查德,拉扎维.模拟CMOS集成电路设计.西安:西安交通大学出版社, 2003.
[34]格雷P.R.,迈耶R.G..模拟集成电路的分析与设计.北京:高等教育出版社, 2003.
[35]Mikko Waltari. Integration of High-Speed CMOS Sample-and-Hold Circuit. Helsinki university of Tachnology, 1999.
[36]Philip E.Allen, Douglas R.Holberg. CMOS Analog Circuit Design[M]. Beijing: Publishing House of Electronics Industry, 2005.
[37]Paul R., GrayA.. Precision curvature-compensated CMOS bandgap reference. IEEE Journal of Solid-State Circuits[J], 1983, 18(6):634-643.
[38]Song B.S. and Gray P.R.A Precision Curvature-Corrected CMOS Bandgap Reference, IEEE J. Solid-Stace Circuits. 1973, Dec.Vol.SC -18, No.6: 634-643.
[39]Tsividis Y.P. and Ulmer R.W.. A CMOS Voltage Reference. IEEE J. Solid—State Circuits. 1982, Dec, Vol.SC-13:6,774-778.
[40]Tzanateas C.A.,Salama T.and Tsividis Y.P. A CMOS Bandgp voltage Reference.IEEE J. So1id-State Circuits. 1979, June Vol.SC-14, No.3.655-657.
[41]Kujik K.E..“A Precision Reference Voltage Source”, IEEE J. Solid—State Circuits.Vol. SC-8.
[42]Razavi B. Design of analog CMOS integrated circuits [M]. NewYork:McGraw-ill, 2001.
[43]张晓敏,陈朝阳,邹雪城等.一种高精度的带隙基准电压源及电流源.计算机与数字工程. 2000,10(32).
[44]柳逊,闫娜,吴晓铁等.一种高性能运算放大器的设计.微电子学与计算机.2005, 229(1):31-34.
[45]季科夫,吴金,常昌远等.一种多谐振荡器的优化设计[J].电子器件. 2002, 3, 25:22-27.
[46]Yue C.P., Lee, Wong T.H., S.S. A physical model for planar spiral Inductors on silicon . Electron Devices Meeting. 1996, Dee:155-158.
[47]Arency R. P., Webster J. G..传感器和信号调节[M].第二版.张伦译.北京:清华大学出版社, 2003:389-392.
[48]Nihtianov S.N., Shterev G.P.,Iliev B.. An interface circuit for R-C impedance sensors with a relaxation oscillator [J]. IEEE Trans. Instrumentation and Measurement.2001, 50(6):1563-1567.
[49]PER FINNSTAM &MIKAEL S?DERLUND.Design of CMOS ring oscillator. Circuit Design Group Department of Signals and Systems Chalmers University of Technology, 2005:112-127.
[50]孙肖子,张企民.模拟电子技术基础[M].西安:西安电子科技大学出版社,2001:224-233.
[2] Bernhard E., Boser and Roger T.. Surface Micromachined ccelerometer. IEEE JOURNAL OF SOLID-STATE CIRCUITS. 1996, 3, 3(1).
[3] Selvakumar Fayez, Najafi K.. A high sensitivity z-axis tensional silicon Accelerometer[J]. Electron Device Meeting, San Francisco, 1996:765-768.
[4] L.Zimmermann, Ebersohl, Berry J. P.. Airbag application:a microsystem including a silicon capacitive accelerometer. CMOS switched capacitor electronics and true self-test capability, 2000: 190-195.
[5] Roylance L.M.. A miniature integrated circuit accelerometer for biomedical Application.Ph.D.dissertation, Department of Electrical Engineering, Stanford University, Stanford, CA., 1997:47-80.
[6]王阳元. 2l世纪的微电子技术.世界科技研究与发展. 1999, 3.
[7]李志坚. 2l世纪微电子技术发展展望.科技导报. 1999, 3.
[8] Julian W. Gardner, Vijay Varadan. Awadelkarim,Micro sensors,MEMS and Smart Devices[M]. New York:Wiley Inc, 2001:259-260.
[9] Bao M.H. .Future of micro electromechanical systems(MEMS)[J]. Sensors and Actuators A, 1996:135-141.
[10]Huikai Xie and Gary K. Fedder. A CMOS Z-Axis Capacitive Accelerometer With Comb-Finger Sensing.The Thirteenth Annual International Conference on Micro Electro Mechanical Systems.23-27, Jan, 2000: 496-501.
[11]Seungbae Lee, Junseok Chae and Alan J.. Two-Dimensional Position Detection System With MEMS Accelerometers, Readout Circuitry, and Microprocessor for Paddles Mouse Applications. IEEE Transactions on Very Large Scale Integration(VLSI) Systems. 2005, 10, 13(10):1167-1178.
[12]Deyou Fang and Huikai Xie. A Low-Power Low-Noise Capacitive Sensing Amplifier for Integrated CMOS MEMS Inertial Sensors.
[13]Lynn M.,Roylance, James B.. A miniature integrated circuit accelerometer, Solid-State Circuits Conference. Digest of Technical Papers. IEEE International. Volume XXI. 1978, 2:220-221.
[14]Rob N., Candler, Thomas W..Fully Encapsulated Sub-Millimeter Accelerometers, Micro Electro Mechanical Systems. 18th IEE International Conference on 30 Jan.-3 Feb. 2005:347-350.
[15]Roylance L. M. and Angell J. B.. A batch—fabricated silicon accelerometer, IEEE Trans. Electron Devices. VOL. ED-26, 1999: 1911-1917.
[16]Tianhong Cui,Jing Wang.Polymer-Based Wide-Bandwidth and High—Sensitivity Micro machined Electron Tunneling Accelerometers Using Hot Embossing. Journal of Micro Electro Mechanical Systems, 2005,10,14(5): 895-902.
[17]Cheng—Hsien Liu and Thomas W. A High—Precision. wide—Bandwidth Micro machined Tunneling Accelerometer .Journal of Micro electro mechanical Systems. 2001,9,10(3): 425—433.
[18]Llobera,Buttgenbach S., Seidemann V.. Integrated Polymer Optical Accelerometer. IEEE Photonics Technology Letters. 2005, 6, 17(6):1262-1264.
[19]Ke-Min Liao, Rongshun Chen. A Novel Thermal-Bubble—Based Micro machined Accelerometer, Solid—State Sensors, Actuators and Microsystems.2005.Digest of Technical Papers . The13th International Conference on Volume 2005, 9:519-522.
[20]Sosnowski R.G., EugeneT,Butler W.F.. Rapid determination of single base mismatch Mutations in DNA hybrids by dieter electric field control.Pocr.Natl.Aacd.Sei.USA. 1997, 9, 4:1119-1123.
[21]Decennia AD, Wise K.D.. A Wireless Microsystem for the Remote Sensing of Pressure, Temperature, nd Relative Humidity [J]. Journal of Micro electro-mechanical Systems. 2005, 14(1):12-22.
[22]朱长纯,韩建强,刘君华.微机械传感器的现状与发展[J].电子元器件应用, 2003, 5(4):8-12.
[23]Junseok Chae,Haluk Kulah,Khalil Najafi:A Monolithic Three—Axis Micro-g Micro machined silicon Capacitive Accelerometer, Micro electro mechanical Systems.Journal of Volume 14,Issue 2,April, 2005:235-242.
[24]Dong Haifeng, Hao Yilong, Jia Yubin. Fabrication and Characterization of Tunneling Current of Anodic Bonded Dry—Etched MEMS Tunneling Accelerometer[J].半导体学报. 25(12):22-23.
[25]Apian Errant.Small Capacitance Measuring Circuit For Capacitive Sensors[M]. Institute of Technology Ladkrabang Chalongkrung Rd.Ladkrabang. Bankok. Thailand. 2001.
[26]Ashcan Sahrawi,Hussein Gossein.A high precision method for measuring very small capacitance changes[J]. Review of Scientific Instruments. University of Technology. 1999,(8):3483-3487.
[27]Preethich and rad M.G., Katsunori Hidak. A Simple Interface Circuit to MeasureVery Small Capacitance Changes in Capacitive sensors. Instrumentation and Measurement, IEEE(C). 2000:406-409.
[28]WQ Yang. Modeling of capacitance tomography sensors[J]. IEEE Proc. Sci. Meas. Techn01. 2003:200-214.
[29]李宝清,陆德仁,王魏源.变面积和变间距结构微机械加速度传感器.中国工程科学. 2002, 2.
[30]王文涛,耿增建.单轴硅微加速度计传感器的原理与电路设计.现代电子技术, 2005(14):92-94.
[31]宋飞,王欣,王奕松等.一种新型高灵敏度横向电容式硅微加速度计.纳米技术与精密工程. 2005, 3(4):283-289.
[32]Preethich and rad .M.G.,Katsunori Hidak. A Simple Interface Circuit to Measure Very Small Capacitance Changes in Capacitive sensors[J]. Instrumentation and Measurement, IEEE(C). 2000:406-409.
[33]毕查德,拉扎维.模拟CMOS集成电路设计.西安:西安交通大学出版社, 2003.
[34]格雷P.R.,迈耶R.G..模拟集成电路的分析与设计.北京:高等教育出版社, 2003.
[35]Mikko Waltari. Integration of High-Speed CMOS Sample-and-Hold Circuit. Helsinki university of Tachnology, 1999.
[36]Philip E.Allen, Douglas R.Holberg. CMOS Analog Circuit Design[M]. Beijing: Publishing House of Electronics Industry, 2005.
[37]Paul R., GrayA.. Precision curvature-compensated CMOS bandgap reference. IEEE Journal of Solid-State Circuits[J], 1983, 18(6):634-643.
[38]Song B.S. and Gray P.R.A Precision Curvature-Corrected CMOS Bandgap Reference, IEEE J. Solid-Stace Circuits. 1973, Dec.Vol.SC -18, No.6: 634-643.
[39]Tsividis Y.P. and Ulmer R.W.. A CMOS Voltage Reference. IEEE J. Solid—State Circuits. 1982, Dec, Vol.SC-13:6,774-778.
[40]Tzanateas C.A.,Salama T.and Tsividis Y.P. A CMOS Bandgp voltage Reference.IEEE J. So1id-State Circuits. 1979, June Vol.SC-14, No.3.655-657.
[41]Kujik K.E..“A Precision Reference Voltage Source”, IEEE J. Solid—State Circuits.Vol. SC-8.
[42]Razavi B. Design of analog CMOS integrated circuits [M]. NewYork:McGraw-ill, 2001.
[43]张晓敏,陈朝阳,邹雪城等.一种高精度的带隙基准电压源及电流源.计算机与数字工程. 2000,10(32).
[44]柳逊,闫娜,吴晓铁等.一种高性能运算放大器的设计.微电子学与计算机.2005, 229(1):31-34.
[45]季科夫,吴金,常昌远等.一种多谐振荡器的优化设计[J].电子器件. 2002, 3, 25:22-27.
[46]Yue C.P., Lee, Wong T.H., S.S. A physical model for planar spiral Inductors on silicon . Electron Devices Meeting. 1996, Dee:155-158.
[47]Arency R. P., Webster J. G..传感器和信号调节[M].第二版.张伦译.北京:清华大学出版社, 2003:389-392.
[48]Nihtianov S.N., Shterev G.P.,Iliev B.. An interface circuit for R-C impedance sensors with a relaxation oscillator [J]. IEEE Trans. Instrumentation and Measurement.2001, 50(6):1563-1567.
[49]PER FINNSTAM &MIKAEL S?DERLUND.Design of CMOS ring oscillator. Circuit Design Group Department of Signals and Systems Chalmers University of Technology, 2005:112-127.
[50]孙肖子,张企民.模拟电子技术基础[M].西安:西安电子科技大学出版社,2001:224-233.