难熔金属与硅间界面反应的热力学研究
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摘要
难熔金属硅化物在现代集成电路封装中具有重要意义。因此,研究难熔金属与硅之间的界面反应,以便预测和控制界面硅化物的形成,不仅具有重要的理论意义,而且有利于指导封装工艺的制订。本文结合国家自然科学基金项目(NO:50671122),采用CALPHAD技术对Pt-Si、V-Si、Ag-Pt等相关体系热力学进行研究,并外推计算Pt-V-Si和Ag-Pt-Si这两个三元体系相关系。主要研究工作如下:
1.优化和计算了Pt-Si和V-Si两个二元系。其中液相与端际相采用替代溶液模型,V_3Si相采用亚点阵模型,其余化合物均采用化学计量比模型。结合文献报道的Pt-V二元系热力学数据,外推计算了Pt-V-Si三元系,和液相面投影图以及一系列的等温截面。
2.优化和计算了Ag-Pt二元系,其中液相与端际相采用替代溶液模型,所有化合物均为化学计量比模型。结合本文优化的Pt-Si二元系和文献报道的Ag-Si二元系的实验数据,外推计算了Ag-Pt-Si三元系,和液相面投影图与一系列的等温截面。
3.利用获得的热力学数据,合理地解释了文献报道的V/Si界面反应的实验现象。
The refractory metal silicides are of great significance in morden electronic packing.Thus,investigation of the interfacial reaction between refractory metal and silicon,in order to predict and control the microstructure evolution during the interfacial reaction,has important theoretical significance,and can help guiding fomulating of packing technology.In this work,based on the project supported by National Science Foundation of China(No.50671122),the thermodynamic of the interfacial reactions between refractory metal and silicon were investigated through the CALPHAD method.This work was comprised of three parts as follows:
1.The Pt-Si and V-Si binary systems were optimized.Ordinary subitutional solution model were employed to describe Liquid,Bcc and Fcc phases,V_3Si phase was described by compound energy formalism,and all the other intermetallic phases were treated as stoichiometric phases.Calculated results were well consistent with that of experimental.Combined with the optimized parameters in the literature for the Pt-V binary system,the Pt-V-Si ternary system was extrapolated.The liquid project and several isothermal sections were calculated.
2.The Ag-Pt binary systems were optimized.Ordinary subitutional solutions were adopted to model Liquid and Fcc terminal solution,and Ag_(15)Pt_(17)phases was treated as stoichiometric compound.Calculated phase diagram and thermodynamic data were both consistent with the experimental work.Combined with the optimized parameters of the Ag-Si binary system in the literature and Pt-Si binary system in this work,the Ag-Pt-Si ternary system was extrapolated.The liquid project and several isothermal sections were calculated.
3.By using the thermodynamic parameters of the V-Si binary system, formation of IMC(s)in binary reaction couples V/Si at different temperatures has been successfully explained.
1.优化和计算了Pt-Si和V-Si两个二元系。其中液相与端际相采用替代溶液模型,V_3Si相采用亚点阵模型,其余化合物均采用化学计量比模型。结合文献报道的Pt-V二元系热力学数据,外推计算了Pt-V-Si三元系,和液相面投影图以及一系列的等温截面。
2.优化和计算了Ag-Pt二元系,其中液相与端际相采用替代溶液模型,所有化合物均为化学计量比模型。结合本文优化的Pt-Si二元系和文献报道的Ag-Si二元系的实验数据,外推计算了Ag-Pt-Si三元系,和液相面投影图与一系列的等温截面。
3.利用获得的热力学数据,合理地解释了文献报道的V/Si界面反应的实验现象。
The refractory metal silicides are of great significance in morden electronic packing.Thus,investigation of the interfacial reaction between refractory metal and silicon,in order to predict and control the microstructure evolution during the interfacial reaction,has important theoretical significance,and can help guiding fomulating of packing technology.In this work,based on the project supported by National Science Foundation of China(No.50671122),the thermodynamic of the interfacial reactions between refractory metal and silicon were investigated through the CALPHAD method.This work was comprised of three parts as follows:
1.The Pt-Si and V-Si binary systems were optimized.Ordinary subitutional solution model were employed to describe Liquid,Bcc and Fcc phases,V_3Si phase was described by compound energy formalism,and all the other intermetallic phases were treated as stoichiometric phases.Calculated results were well consistent with that of experimental.Combined with the optimized parameters in the literature for the Pt-V binary system,the Pt-V-Si ternary system was extrapolated.The liquid project and several isothermal sections were calculated.
2.The Ag-Pt binary systems were optimized.Ordinary subitutional solutions were adopted to model Liquid and Fcc terminal solution,and Ag_(15)Pt_(17)phases was treated as stoichiometric compound.Calculated phase diagram and thermodynamic data were both consistent with the experimental work.Combined with the optimized parameters of the Ag-Si binary system in the literature and Pt-Si binary system in this work,the Ag-Pt-Si ternary system was extrapolated.The liquid project and several isothermal sections were calculated.
3.By using the thermodynamic parameters of the V-Si binary system, formation of IMC(s)in binary reaction couples V/Si at different temperatures has been successfully explained.
引文
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