Fe、Co共掺杂TiO_2稀磁半导体性能研究
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摘要
近年来,随着稀磁半导体(DMS)新材料的不断出现,其发展非常迅速,由于稀磁半导体具有普通半导体所不具备的优点,所以,其具有巨大的潜在实际运用价值。
本论文首先简单介绍稀磁半导体的原理和特点,以及现阶段对稀磁半导体研究的最新进展。
本文采用溶胶凝胶的方法制备了Fe、Co共掺杂TiO2粉体材料。接着用X射线衍射对稀磁半导体材料进行了表征,结果表明Fe、Co的掺杂能够较好地溶入TiO2晶格,无明显的两相分离产生,且当Fe/Co掺杂比例接近时,会最大程度上的弱化TiO2基体相---锐钛矿相的结晶度。
用振动样品磁强计对样品的磁性能进行测试,发现当Fe/Co掺杂比例为2：3和3：2时,样品具有强度远大于其他Fe/Co掺杂比例时的磁性能。以束缚磁极化子理论(BMPs)解释,这是因为此时样品中氧空位数量达到最大,这个解释同时得到PL谱结果的印证。
此外氮气退火情况下样品磁性能会大大增强,则应该是由于缺氧退火导致样品中氧空位大量增多的缘故。
With the emergence of diluted magnetic semiconductor (DMS) technology, the study in this field develops quickly. As there are many advantages which are not existed in the normal semiconductor with DMS, it exhibits a large potential value in the application.
This paper briefly introduces the concept and characteristics of DMS and the latest research results in the field of DMS.
Preparation of the Fe and Co doped TiO2 powder is done by sol-gel mothed.The diluted magnetic semiconductor materials were characterized with X-ray diffraction. These results show that Fe and Co were integrated into TiO2 lattice, and no significant phase separation was found.When Fe/Co doping ratio closed to equal, The doping would weak intensity of anatase crystalline phase which is the main phase in the sample at the greatest degree.
With VSM tested on the magnetic properties of samples, it is found that when Fe/ Co doping ratio at 2:3 and 3:2, the intensity of magnetic property is much larger than that of the samples with Fe/Co at other doping ratio.So it is believed that the sample maximize the number of oxygen vacancies at these doping ratio by BMPs, which was poved by the PL conclusions.
本论文首先简单介绍稀磁半导体的原理和特点,以及现阶段对稀磁半导体研究的最新进展。
本文采用溶胶凝胶的方法制备了Fe、Co共掺杂TiO2粉体材料。接着用X射线衍射对稀磁半导体材料进行了表征,结果表明Fe、Co的掺杂能够较好地溶入TiO2晶格,无明显的两相分离产生,且当Fe/Co掺杂比例接近时,会最大程度上的弱化TiO2基体相---锐钛矿相的结晶度。
用振动样品磁强计对样品的磁性能进行测试,发现当Fe/Co掺杂比例为2：3和3：2时,样品具有强度远大于其他Fe/Co掺杂比例时的磁性能。以束缚磁极化子理论(BMPs)解释,这是因为此时样品中氧空位数量达到最大,这个解释同时得到PL谱结果的印证。
此外氮气退火情况下样品磁性能会大大增强,则应该是由于缺氧退火导致样品中氧空位大量增多的缘故。
With the emergence of diluted magnetic semiconductor (DMS) technology, the study in this field develops quickly. As there are many advantages which are not existed in the normal semiconductor with DMS, it exhibits a large potential value in the application.
This paper briefly introduces the concept and characteristics of DMS and the latest research results in the field of DMS.
Preparation of the Fe and Co doped TiO2 powder is done by sol-gel mothed.The diluted magnetic semiconductor materials were characterized with X-ray diffraction. These results show that Fe and Co were integrated into TiO2 lattice, and no significant phase separation was found.When Fe/Co doping ratio closed to equal, The doping would weak intensity of anatase crystalline phase which is the main phase in the sample at the greatest degree.
With VSM tested on the magnetic properties of samples, it is found that when Fe/ Co doping ratio at 2:3 and 3:2, the intensity of magnetic property is much larger than that of the samples with Fe/Co at other doping ratio.So it is believed that the sample maximize the number of oxygen vacancies at these doping ratio by BMPs, which was poved by the PL conclusions.
引文
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[2]K.J. Kim, Y.R. Park, G.Y. Ahn, C.S Kim, J.Y. Park, J. Magn. Magn. Mater.304 (2006) e152.
[3]H.M. Lee, C.S. Kim, J. Appl. Phys.101 (2007) 09H110.
[4]J.H. Jho, D.H. Kim, S.J. Kim, J. Alloys Compd. (2007), doi:10.1016/j.jallcom.2007.04.285
[5]Y.R. Uhm, S.H. Woo, M.K. Lee, C.K. Rhee, Materials Science Forum 534-536 (2007) 229.
[6]L. Balcells, C. Frontera, F. Sandiumenge, A. Roig, B. Martinez, J. Kouam, C. Monty,Appl. Phys.Lett.89 (2006) 122501.
[7]C.E. Rodriguez Torres, A.F. Cabrera, M.B. Fernandez van Raap, F.H. Sanchez, Physica B 354 (2004) 67.
[8]S.Y. Zhu, Y.Z. Li, C.Z. Fan, D.Y. Zhang, W.H. Liu, Z.H. Sun, S.Q. Wei,131 Physica B 364 (2005) 199.
[9]A.F. Cabrera, C.E. Rodriguez Torres, L. Errico, F.H. Sanchez, Physica B 384 (2006) 345.
[10]G.Y. Ahn, S.-I. Park, S.J. Kim, B.W. Lee, C.S. Kim, IEEE Trans. Magn.41(2005) 2730.
[11]H.S. Hus, J.C.A. Huang, Y.H. Huang, Y.F. Liao, M.Z. Lin, C.H. Lee, J.F. Lee, S.F. Chen, L.Y. Lai, C.P. Liu, Appl. Phys. Lett.88 (2006) 242507.
[12]S.-J. Han, J.W. Song, C.-H. Yang, S.H. Park, J.-H. Park, Y.H. Yeong, Appl. Phys. Lett.81 (2002) 4212.
[13]H.T. Lin, T.S. Chin, J.C. Shih, S.H. Lin, T.M. Hong, R.T. Huang, F.R. Chen, J.J. Kai, Appl. Phys. Lett.85 (2004) 621.
[14]J.F. Wang, J.N. Cai, Y.H. Li, C.W. Nan, Appl. Phys. Lett.87 (2005) 202501.
[15]J.M.D. Coey, M. Venkatesan, P. Stamenov, C.B. Fitzgerald, L.S. Dornles, Phy. Rev. B 72 (2005) 024450.
[16]M.S. R. Rao, D.C. Kundaliya, S.B. Ogale, L.F. Fu, S.J. Welz, N.D. Browning, V. Zaitsev, B.Varughese, C.A. Cardoso, A. Curtin, S. Dhar, S.R. Shinde, T. Venkatesan, S.E. Lofland, S.A. Schwarz, Appl. Phys. Lett.88 (2006) 142505.
[17]S.N. Kale, S.B. Ogale, S.R. Shinde, M. Sahasrabuddhe, V.N. Kulkarni, R.L. Greene, T.Venkatesan, Appl. Phys. Lett.82 (2003) 2100.
[18]ZhaoQian,WuPing,LiBao-Ling,LU Zun-Ming.Chin Phsy Lett,VOL.25,No.5(2008):1811-181.
[19]Chunming Huang,Xueqin Liu.Yanping liu, Yinyue Wang.Chemical Physics Letters,432 (2006):468-472
[20]Dong Ho Kim,S.l.Woo,S.H.Moon,H.D.Kim,B.Y.Kim,J.H.Cho,Y.G.Joh,E.C.Kim.Solid State Communication 136(2005):554-558
[21]Santi Maensiri,PaVeena LaoKul,Jutharatana Klinkaewnarong.Journal of Magnetism and Magnetic Materials,302(2006):448-453
[22]杨南如,余桂郁.硅酸盐通报,第2期(1992)：56-63
[23]Renata Reisfeld,Tsiala Saraidarov.Optical Materials,28(2006):64-70
[24]D.Stauffer.Physica A:Statistical and Theoretical Physics,VOl.106,No.2(1981):177-188
[25]W. Klonowski.Biosystems,VOL22,No.1(1988):1-9
[26]左演声,陈文哲,梁伟.材料现代分析方法,北京工业大学出版社,2000.
[27]Igor Djerdj,Denis Arcon,Zvonko Jaglicic,Markus Niederberger.Journal of Solid State Chemistry,181(2008):1571-1581
[28]Sanyuan Zhu,Tongfei Shi,Wenhan Liu,Shiqiang Wei,YaningXie.Physica B,396(2007): 177-180
[29]S. Senthilkumaar,and K.Porkodi.Journal of Colloid and Interface Science, VOL 288, No.l(2005):184-198
[30]Ki Do Kima,Hee Taik Kim.Colloids and Surfaces A:Physicochemical and Engineering Aspects,VOL.255,NO.2(2005):131-137
[31]林璠.机械合金化制备Fe掺杂氧化物稀磁半导体[D].华东师范大学,2008
[32]井立强,孙志华,袁福龙,王百齐,辛柏福,付宏刚.中国科学B辑化学,36(2006)：53～57
[33]张立德,牟季美,纳米材料和纳米结构,科学出版社,2001