钽掺杂铪基高k栅介质薄膜的离子束制备与表征
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摘要
为了解决由栅介质层过薄而引起的漏电流显著增加的难题,人们引入了一种具有高介电常数(高k)的材料来取代传统的SiO2。其中,铪基高k材料由于具备较高的介电常数和结晶温度、优异的界面特性和热稳定性以及低的频率色散和漏电流被广泛关注。
本实验采用双离子束沉积系统在本底真空5×10~(-4) Pa和工作气压3.2×10~(-2) Pa条件下,于电阻率为3~8cm的Si衬底上成功制备了高质量的Ta_2O_5和HfTaO薄膜。着重探究了薄膜微结构、介电特性与辅源离子能量、掺杂含量之间的潜在关系。此外,还研究了不同金属栅电极(Ag、Au、Pt)对HfTaO基MOS电容漏电流、电容值、可靠性、导电机制的影响。
实验结果显示:(a)在辅源能量200eV下制备的Ta_2O_5薄膜具有最小的表面粗糙度和优异的界面特性。由C-V/I-V特征曲线表明,200eV下制备的Ta_2O_5基MOS电容具有最小的平带电压偏移量、等效氧化层密度以及漏电流。研究表明合适的辅源能量可有效改善薄膜生长机制,使薄膜由类岛状沉积转化为层状生长,从而提高晶粒均匀性、薄膜平整度以及致密性,使薄膜具有较好的电学性质。(b)通过向HfO2中掺杂Ta元素,可有效提高其物理、电学特性。尤其是Hf0.54Ta0.46O样品显示了大的介电常数(~22),高的结晶温度900℃,小的平带电压偏移、氧化层电荷密度以及漏电流。(c)由于Pt金属具有高的功函数φm s(Pt)=5.65eV,因此Pt/HfTaO/Si/Pt电容在等效厚度Eot小于Ag, Au样品的情况下,仍然具有最小的漏电流。总言之,Pt金属极具成为下一代MOS器件中栅电极的潜质。
In order to solve a remarkable increase in tunneling leakage current through the ultra-thin gate dielectrics, materials with a high dielectric constant (high k) have been introduced as gate dielectrics alternative to conventional SiO2, Hf-based high-k materials have been drawn attention for a long time because of its high dielectric constant and crystallization temperature, excellent interfacial properties and thermal stabilities, low frequency dispersion and leakage current density.
In this letter, Ta_2O_5 and HfTaO thin films were deposited on p-type Si substrate with a resistively of 3~8 cm using an dual ion beam sputtering deposition technique (DIBSD) at a base pressure of 5×10~(-4) Pa and work pressure of 3.2×10~(-2) Pa. A special focus of the study is to reveal the association between the structure, dielectric properties and the various ion beam energy of the assisted ion source as well as the content of doping elements. Besides, influence of the different metal electrodes (Ag、Au、Pt) on the leakage currents, capacity, reliable characteristics and conduction mechanism of HfTaO-based capacitor have been studied.
The experimental results indicated that: (a) the Ta_2O_5 film prepared under 200eV have the smallest surface roughness and excellent interfacial characteristics. C-V and I-V characteristic curves indicate that the Ta_2O_5 MOS has the minimum value of flat voltage offset, density of oxides charges and leakage current. Eventually we found the appropriate assisted source energy can effectively improve the film’s growth mechanism and makes the film growth type from the island into a layered, which will improve the uniformity of crystalline grain and the film’s roughness and compactness. (b)We significantly improved the physical and electrical characteristics of HfTaO gate dielectrics by incorporating Ta into HfO2 films. Especially, Hf0.54Ta0.46O sample exhibited the highest k value(~22) and crystallization temperature of 900℃, the smallest flat-band voltage, oxide-charge density and leakage current. (c) It is proved that the Pt-electrode capacitor still has the smallest leakage current value at a high electric field even though its Eot is lower than that of the Ag, Au-electroded. The result is mainly due to Pt with a high enough work functionφms(Pt)=5.65eV. In a word, it is thus proposed that Pt electrode has a strong potential for future nano MOS devices.
本实验采用双离子束沉积系统在本底真空5×10~(-4) Pa和工作气压3.2×10~(-2) Pa条件下,于电阻率为3~8cm的Si衬底上成功制备了高质量的Ta_2O_5和HfTaO薄膜。着重探究了薄膜微结构、介电特性与辅源离子能量、掺杂含量之间的潜在关系。此外,还研究了不同金属栅电极(Ag、Au、Pt)对HfTaO基MOS电容漏电流、电容值、可靠性、导电机制的影响。
实验结果显示:(a)在辅源能量200eV下制备的Ta_2O_5薄膜具有最小的表面粗糙度和优异的界面特性。由C-V/I-V特征曲线表明,200eV下制备的Ta_2O_5基MOS电容具有最小的平带电压偏移量、等效氧化层密度以及漏电流。研究表明合适的辅源能量可有效改善薄膜生长机制,使薄膜由类岛状沉积转化为层状生长,从而提高晶粒均匀性、薄膜平整度以及致密性,使薄膜具有较好的电学性质。(b)通过向HfO2中掺杂Ta元素,可有效提高其物理、电学特性。尤其是Hf0.54Ta0.46O样品显示了大的介电常数(~22),高的结晶温度900℃,小的平带电压偏移、氧化层电荷密度以及漏电流。(c)由于Pt金属具有高的功函数φm s(Pt)=5.65eV,因此Pt/HfTaO/Si/Pt电容在等效厚度Eot小于Ag, Au样品的情况下,仍然具有最小的漏电流。总言之,Pt金属极具成为下一代MOS器件中栅电极的潜质。
In order to solve a remarkable increase in tunneling leakage current through the ultra-thin gate dielectrics, materials with a high dielectric constant (high k) have been introduced as gate dielectrics alternative to conventional SiO2, Hf-based high-k materials have been drawn attention for a long time because of its high dielectric constant and crystallization temperature, excellent interfacial properties and thermal stabilities, low frequency dispersion and leakage current density.
In this letter, Ta_2O_5 and HfTaO thin films were deposited on p-type Si substrate with a resistively of 3~8 cm using an dual ion beam sputtering deposition technique (DIBSD) at a base pressure of 5×10~(-4) Pa and work pressure of 3.2×10~(-2) Pa. A special focus of the study is to reveal the association between the structure, dielectric properties and the various ion beam energy of the assisted ion source as well as the content of doping elements. Besides, influence of the different metal electrodes (Ag、Au、Pt) on the leakage currents, capacity, reliable characteristics and conduction mechanism of HfTaO-based capacitor have been studied.
The experimental results indicated that: (a) the Ta_2O_5 film prepared under 200eV have the smallest surface roughness and excellent interfacial characteristics. C-V and I-V characteristic curves indicate that the Ta_2O_5 MOS has the minimum value of flat voltage offset, density of oxides charges and leakage current. Eventually we found the appropriate assisted source energy can effectively improve the film’s growth mechanism and makes the film growth type from the island into a layered, which will improve the uniformity of crystalline grain and the film’s roughness and compactness. (b)We significantly improved the physical and electrical characteristics of HfTaO gate dielectrics by incorporating Ta into HfO2 films. Especially, Hf0.54Ta0.46O sample exhibited the highest k value(~22) and crystallization temperature of 900℃, the smallest flat-band voltage, oxide-charge density and leakage current. (c) It is proved that the Pt-electrode capacitor still has the smallest leakage current value at a high electric field even though its Eot is lower than that of the Ag, Au-electroded. The result is mainly due to Pt with a high enough work functionφms(Pt)=5.65eV. In a word, it is thus proposed that Pt electrode has a strong potential for future nano MOS devices.
引文
[1]施敏,半导体器件物理与工艺,苏州:苏州大学出版社, 2002,164.
[2] Neil H.E.Weste, David Harris. CMOS VLSI Design: a Circuits and Systems Perspective,北京:中国电力出版社, 2006, 203.
[3] Martin M.Frank, SangBum Kim, et al. Scaling the MOSFET gate dielectric: From high-k to higher-k, Microelectron. Eng. 2009, 86, 1603-8.
[4] Yoshinori Tsuchiya, Masahiko Yoshiki, et al. Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system, Appl. Phys.Lett. 2009, 106, 044510-17.
[5] Xu-bing Lu, Kenji Maruyama, et al. Characterization of HfTaO films for gate oxide and metal-ferroelectric-insulator-silicon device applications, J. Appl.Phys. 2008,103, 044105-9.
[6]杨智超,高K栅介质材料的研究进展,赤峰学院学报,2008, 24, 2.
[7] Jae-Woong Lee, Moon-Ho Ham, Jae-Min Myoung. Gate-controlled transport in GaN nanowire devices with high-k Si3N4 gate dielectrics, Solid State Commun. 2008,145, 327-31.
[8] Byoungjun Park, Kyoungah Cho, Sangsig Kim, Electrical characteristics of polycrystalline Si layers embedded into high-k Al2O3 gate layers, Appl. Surf. Sci. 2008, 254, 7905-8.
[9] M.L. Green, P.K. Schenck, et al.“Higher-K”dielectrics for advanced silicon microelectronic devices: A combinatorial research study, Microelectron. Eng. 2009, 86, 1662-4.
[10] E.Atanassova, D.Spassov, et al. Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors, Microelectron. Eng. 2006, 83, 1918-26.
[11] W. J. Zhu, T. Tamaga Wa, et al. Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics, IEEE Electron Dev. Lett. 2002, 23, 649-51.
[12] Goutam Kumar Dalapati, Yi Tong, Wei-Yip Loh, et al. Electrical and Interfacial Characterization of Atomic Layer Deposited High-K Gate Dielectrics on GaAs for Advanced CMOS Devices, IEEE Trans. Electr. Dev. 2007, 8, 54,1831-7.
[13] Hiroaki Arimura, Naomu Kitano, et al. Excellent electrical properties of TiO2/HfSiO/SiO_2 layered higher-k gate dielectrics with sub-1 nm equivalent oxide thickness, Appl. Phys. Lett. 2008, 92, 212902-4.
[14] Li-ping Feng, Zheng-tang Liu, Ya-ming Shen, Compositional, structural and electronic characteristics of HfO_2 and HfSiO dielectrics prepared by radio frequency magnetron sputtering, Vacuum, 2009,83, 902-5.
[15] C.Zhao, T.Witters, et al. Properties of ALD HfTaxOy high-k layers deposited on chemical silicon oxide, Microelectron. Eng. 2007, 84, 7-10.
[16] Xiongfei Yu, Chunxiang Zhu, M. F. Li. Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline- silicon gate, Appl. Phys. Lett, 2004, 14, 85, 2893-5.
[17] Xiongfei Yu, Chunxiang Zhu, et al. Improvements on Surface Carrier Mobility and Electrical Stability of MOSFETs Using HfTaO Gate Dielectric. IEEE Trans. Electr. Dev. 2004, 12, 51, 2154-60.
[18] Xiongfei Yu, Chunxiang Zhu, et al. Mobility Enhancement in TaN Metal-Gate MOSFETs Using Tantalum Incorporated HfO_2 Gate Dielectric, IEEE Electron Dev. Lett. 2004, 7, 25, 501-3.
[19] M.-H.Cho, K.B.Chung, et al. Change in phase separation and electronic structure of nitrided Hf-silicate films as a function of composition and post-nitridation anneal, Appl. Phys. Lett. 2006, 89, 142908-10.
[20] A.Uedono, K.Ikeuchi, et al. Impact of nitridation on open volumes in HfSiOx studied using monoenergetic positron beams, Appl. Phys. Lett. 2006, 88, 171912-4.
[21] Gaobo Xu, Qiuxia Xu. Thermal stability of HfON, HfSiON and HITaON gate dielectrics, Solid-State and Integrated-Circuit Technology, International Conference on, 2008, 1284-7.
[22] G.Vellianitis, Z.M.Rittersma, et al. Charge trapping in nitrided HfSiO gate dielectric layers, Appl. Phys. Lett. 2006, 89, 092902-4.
[23] H. Kamada, T. Tanimura, et al. Control of oxidation and reduction reactions at HfSiO/Si interfaces through N exposure or incorporation, Appl. Phys. Lett. 2008, 93, 212903-5.
[24] Satoshi Toyoda, Jun Okabayashi, et al. Nitrogen doping and thermal stability in HfSiOxNy studied by photoemission and x-ray absorption spectroscopy, Appl. Phys.Lett. 2005, 87, 182908-10.
[25] A.Uedono, K.Ikeuchi, et al. Characterization of HfSiON gate dielectrics using monoenergetic positron beams. J. Appl. Phys. 2006, 99, 054507-12.
[26] Piyas Samanta, Chin-Lung Cheng, et al. Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/SiO_2 and HfO_2/SiO_2 gate dielectric stacks, J. Appl. Phys. 2009, 105, 124507-14.
[27] Han Zhao, Davood Shahrjerdi, et al. Inversion-type indium phosphide metal-oxide- semiconductor field-effect transistors with equivalent oxide thickness of 12 ? using stacked HfAlOx/HfO_2 gate dielectric, Appl. Phys. Lett. 2008, 92, 253506-8.
[28] C. X. Li, X. F. Zhang, et al. Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer. Solid-State and Integrated-Circuit Technology, International Conference on, 2008,1-4.
[29] X. F. Zhang, J. P. Xu, Improved electrical properties of Ge metal- oxide- semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer, Appl. Phys. Lett. 2008, 92, 262902-4.
[30] M. V. Fischetti, Long-range Coulomb interactions in small Si devices. Part II.Effective electron mobility in thin-oxide structures, J. Appl. Phys. 2001, 2, 89, 1232-50.
[31] T. Dimitrova, E. Atanassova. Electrical and transport properties of RF sputtered Ta2O5 on Si. Solid-state Electron. 1998, 42, 307-15.
[32] G. Hyvert, T. Nguyen, et al. A study on mobility degradation in nMOSFETs with HfO_2 based gate oxide. Mater. Sci Eng., B, 2009, 165, 129-31.
[33]余涛,吴雪梅,诸葛兰剑,《高k栅介质材料的研究现状与前景》,材料导报,2010,24(21): 25-29.
[1]刘金声,离子束沉积薄膜技术及应用,北京:国防工业出版社, 2003.
[2] http://www.ionbeam.com.cn/cpjs03.htm.
[3]洪波,工作参数对SiCN薄膜制备和性质的影响: [学位论文].苏州:苏州大学, 2010.
[4] G. Hyvert, T. Nguyen, et al. A study on mobility degradation in nMOSFETs with HfO_2 based gate oxide. Mater. Sci Eng., B, 2009, 165, 129-31.
[5]杨旭敏. BCN薄膜的制备和表征:[学位论文].苏州:苏州大学, 2009.
[6]周玉,材料分析方法,北京:机械工业出版社, 2004.
[7]赵宗彦, X射线与物质结构,合肥:安徽大学出版社, 2004.6.
[8]吴自勤,王兵,薄膜生长,北京:科学出版社, 2001.
[9] http://www.hudong.com/wiki/扫描电镜.
[10]施敏,半导体器件物理与工艺(第二版),苏州:苏州大学出版社, 2002.
[1] ZHOU Ji-cheng, LUO Di-tian, LI You-zhen, LIU Zheng, Trans. Nonferrous Met. Soc. China, Vol. 2009, 19, 359-63.
[2] J. M. Hutson , R. A. B. Devine and R. D. Schrimpf, Electrical and radiation assisted passivation of the Ta2O5/Si interface, J. Appl. Phys. 2004, 95, 8463-5.
[3] T. Dimitrova and E. Atanassova, Electrical properties of RF sputtered Ta2O5 MOS and MOST structures, Solid-State Electron. 1998, 42, 307-15.
[4] Yasushiro Nishioka, Hiroshi Shinriki and Kiichiro Mukai, Influence of SiO_2 at the Ta2O5/Si interface on dielectric characteristics of Ta2O5 capacitors, J. Appl. Phys. Vol. 61 (1987), p. 2335-8.
[5] G. Q. Lo, D. L. Kwong and S. Lee, Metal-oxide-semiconductor characteristics of chemical vapor deposited Ta2O5 films, Appl. Phys. Lett. 1992, 60, 3286-8.
[6] E.Atanassova, D.Spassov, et al. Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors, Microelectron. Eng. 2006, 83, 1918-26.
[7]刘金声,离子束沉积薄膜技术及应用[M].北京:国防工业出版社, 2003, 1.
[8] X. F. Zhang, J. P. Xu, Improved electrical properties of Ge metal- oxide- semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer, Appl. Phys. Lett. 2008, 92, 262902-4.
[9] C. X. Li, X. F. Zhang, et al. Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer. Solid-State and Integrated-Circuit Technology, International Conference on, 2008,1-4.
[10] N. M. Gasanly, Coexistence of Indirect and Direct Optical Transitions, Refractive Indices, and Oscillator Parameters in TIGaS2, TIGaSe2, and TIInS2 Layered Single Crystals, J. Korean Chem. Soc, 2010, 57, 164-8.
[11]崔永锋,袁志好,表面修饰的二氧化钛纳米材料的结构相变和光吸收性质,物理学报, 2006, 55, 5173-6.
[12]诸葛福伟,高相东,李效民,甘小燕,连续式离子层吸附与反应法沉积CuSCN薄膜及其微观结构、光学特性研究,2009, 24, 8-12.
[13] C. V. Ramana, R. S. Vemuri, Fernandez and A. L. Campbell, Size-effects on theoptical properties of zirconium oxide thin films, 2009, 95, 231905-7.
[14] ZHANG Guangyong, XUE Yiyu, GUO Peitao, WANG Hanhua, MA Zhongjie. Optical Properties and Microstructure of Ta2O5 Thin Films Prepared by Ion Assisted Electron Beam Evaporation, Angew. Chem. Int. Ed. 2008, 5, 23, 632-7.
[15]刘洪祥,熊胜明,李凌辉,张云洞,离子束溅射沉积Ta2O5光学薄膜的实验研究,2004, 31, 41-43(转55).
[16]张幸福,魏爱香,刘毅,磁控反应溅射制备的Ta2O5薄膜的光学与介电性能,2007, 38, 878-80.
[17] Yi-Hao Pai, Chih-Cheng Chou, Fuh-Sheng Shieu, Preparation and optical properties of Ta2O5?x thin films, Mater. Chem. Phys. 2008, 107, 524-7.
[18] Yu-Lun Chueh, Li-Jen Chou, and Zhong Lin Wang. SiO_2/Ta2O5 Core–Shell Nanowires and Nanotubes. Angew. Chem. Int. Ed. 2006, 45, 7773-7.
[19] Beata Zieli?ska, Ryszard J. Kale?czuk, Comparison of NaNbO3 AND NaTaO3 as the photocatalysts in the reaction of hydrogen generation, Pol. J. Chem. Technol. 2010, 12, 33-5.
[20] XU Cheng, QIANG Ying-Huai, ZHU Ya-Bo, GUO Li-Tong, SHAO Jian-Da, FAN Zheng-Xiu. Laser Damage Mechanisms of Amorphous Ta2O5 Films at 1064, 532 and 355nm in One-on-One Regime, Chin. Phys. Lett. 2010, 27, 114205-8.
[21] J. Sikula, J. Pavelka, J. Hlavka, V. Sedlakova, L. Grmela, The tantalum capacitor as a MIS structure in reverse mode, CARTS’01, 2001, 289-292.
[22] Wang-Jae Chun, Akio Ishikawa, et al. Conduction and Valence Band Positions of Ta2O5, TaON, and Ta3N5 by UPS and Electrochemical Methods, J. Phys. Chem. 2003, 107, 1798-1803.
[23] S. K. AL-ANI, A. A. HIGAZY, Study of optical absorption edges in MgO-P2O5 glasses, 1991, 26, 3670-4.
[1] W. J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, T. P. Ma, Effect of Al inclusion in HfO_2 on the physical and electrical properties of the dielectrics, IEEE Electron Dev. Lett. 2002, 23, 649-51.
[2] Kishiro, K., Inoue, N., Chen, S. C., Yoshimaru, M. Structure and Electrical Properties of Thin Ta2O5 Deposited on Metal Electrodes, Jpn. J. Appl. Phys. 1998, 37, 1336-9.
[3] Xiongfei Yu, Chunxiang Zhu, M. F. Li. Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline- silicon gate, Appl. Phys. Lett, 2004, 14, 85, 2893-5.
[4] G. Seguini, M. Perego, S. Spiga, and M. Fanciulli, Conduction band offset of HfO_2 on GaAs, Appl. Phys. Lett. 2007, 91, 192902-4.
[5] Chyuan-Haur Kao, Hsiang Chen, Jing Sing Chiu, Kung Shao Chen, Yu Tsung Pan, Physical and electrical characteristics of the high-k Ta2O5 (tantalum pentoxide) dielectric deposited on the polycrystalline silicon, Appl. Phys. Lett. 2010, 96, 112901-3.
[6] L. Wang, K. Xue, and J. B. Xu, Control of interfacial silicate between HfO_2 and Si by high concentration ozone, Appl. Phys. Lett. 2006, 88, 072903-5.
[7]洪波,工作参数对SiCN薄膜制备和性质的影响: [学位论文].苏州:苏州大学, 2010.
[8] D. H. Triyoso, R. I. Hegde, S. Zollner, M. E. Ramon, S. Kalpat, et al. Impact of titanium addition on film characteristics of HfO_2 gate dielectrics deposited by atomic layer deposition , J. Appl. Phys. 2005, 98, 05410411.
[9] X. F. Zhang, J. P. Xu, Improved electrical properties of Ge metal-oxide- semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer, Appl. Phys. Lett. 2008, 92, 262902-4.
[10] C. X. Li, X. F. Zhang, et al. Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer. Solid-State and Integrated-Circuit Technology, International Conference on, 2008,1-4.
[11] Xu-bing Lu, Kenji Maruyama, et al. Characterization of HfTaO films for gate oxide and metal-ferroelectric-insulator-silicon device applications, J. Appl.Phys. 2008,103, 044105-9.
[12] C.Zhao, T.Witters, et al. Properties of ALD HfTaxOy high-k layers deposited on chemical silicon oxide, Microelectron. Eng. 2007, 84, 7-10.
[13] N. V. Nguyen, Albert V. Davydov, Deane Chandler-Horowitz, Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon, Appl. Phys. Lett. 2005, 87, 192903-5.
[14] Y. B. Zheng, S. J. Wang, C.H.A. Huan, Microstructure-dependent band structure of HfO_2 thin films, Thin Solid Films, 2006, 504, 197-200.
[15] Marie C. Cheynet, Simone Pokrant, Frans D. Tichelaar, Jean-Luc Rouvière, J. Appl. Phys. Crystal structure and band gap determination of HfO_2 thin films, 2007, 101, 054101-7.
[16] H. Jin, S. K. Oh, and H. J. Kang, Band gap and band offsets for ultrathin (HfO_2)x(SiO_2)1?x dielectric films on Si (100), Appl. Phys. Lett. 2006, 89, 122901-3.
[17] Jebreel M. Khoshman, Martin E. Kordesch, Optical properties of a-HfO_2 thin films, Surf. Coat.Technol. 2006, 201, 3530-5.
[18] Julie WIDIEZ, Koji KITA, Kazuyuki TOMIDA, Tomonori NISHIMURA, and Akira TORIUMI, Internal Photoemission over HfO_2 and Hf(1-x)SixO_2 High-k Insulating Barriers: Band Offset and Interfacial Dipole Characterization, Jpn. J. Appl. Phys. 2008, 47, 2410-4.
[19] Deok-Yong Cho, Jae-Min Lee, S.-J. Oh, Hoyoung Jang, J.-Y. Kim, J.-H. Park and A. Tanaka, Influence of oxygen vacancies on the electronic structure of HfO_2 films, Phys. Rev. B, 2007, 76, 165411-5.
[1]施敏,半导体器件物理与工艺[M].苏州:苏州大学出版,2002,164-185.
[2] Indranil De, Deepak Johri, Anadi Srivastava, C. M. Osburn, Impact of gate work function on device performance at the 50nm technology node, Solid-State Electron. 2000, 44, 1077-80.
[3] J. Liu, H. C. Wen, J. P. Lu, D. L. Kwong. Improving Gate-Oxide Reliability by TiN Capping Layer on NiSi FUSI Metal Gate. IEEE Electron Dev. Lett. 2005, 26, 458-60.
[4] Yee-Chia Yeo, Tsu-Jae King, Chenming Hu. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology, J. Appl. Phys. 2002, 92, 7266-71.
[5] Yee-Chia Yeo. Metal gate technology for nanoscale transistors—material selection and process integration issues, Thin Solid Films, 2004, 462-463, 34-41.
[6] H. Y. Yu, B. Van Daele, Kubicek, and K. De Meyer. Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology (Poly-Si/ TiN/SiO_2), IEEE Electron Dev. Lett. 2007, 28, 1089-91.
[7] Yasutaka Tsuda, Hideo Omoto, Katsuto Tanaka, Hisashi Ohsaki. The underlayer effects on the electrical resistivity of Ag thin film, Thin Solid Films, 2006, 502, 223-7.
[8] Midori Kawamura, Yuuki Inami, Yoshio Abe, Katsutaka Sasaki, Thermally Stable Ag Thin Films Modified with Very Thin Al Oxide layers, Jpn. J. Appl. Phys. 2008, 47, 8917-20.
[9] Yuki Kita, Shinichi Yoshida, Takuji Hosoi, Takayoshi Shimura, Kenji Shiraishi, Yasuo Nara, et al. Systematic study on work-function-shift in metal/Hf-based high-k gate stacks, Appl. Phys. Lett. 2009, 94, 122905-7.
[10] In-Sung Park, Taeho Lee, Hankyong Ko, Jinho Ahn, Electrical and Reliability Characteristics of HfO_2 MOS Capacitor with Mo Metal Gate Electrode, J.Korean Phys. Soc. 2006, 49, S760-3.
[11] X. F. Zhang, J. P. Xu, C. X. Li, P. T. Lai, C. L. Chan, J. G. Guan. Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gatedielectric by using TaOxNy interlayer, Appl. Phys. Lett. 2008, 92, 262902-4.
[12] C.X. Li, X.F. Zhang, J. P. Xu, P. T. Lai. Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer. 2008 IEEE International Conference on Electron Devices and Solid-State Circuits. Univ. of Hong Kong, 2008, 1-4.
[13] Hyoungsub Kima, Paul C. McIntyre, Chi On Chui, Krishna C. Saraswat, Susanne Stemmer. Engineering chemically abrupt high-k metal oxide/silicon interfaces using an oxygen-gettering metal overlayer, J. Appl. Phys. 2004, 96, 3467-72.
[14] E. Atanassova, A. Paskaleva, N. Novkovski, M. Georgieva, Conduction mechanisms and reliability of thermal Ta2O5–Si structures and the effect of the gate electrode, J. Appl. Phys. 2005, 97, 094104-14.
[15] Ching-Huang Lu, Gloria M. T. Wong, Michael D. Deal, Wilman Tsai, Prashant Majhi, Chi On Chui, et al. Characteristics and Mechanism of Tunable Work Function Gate Electrodes Using a Bilayer Metal Structure on SiO_2 and HfO_2. IEEE Electron Dev. Lett. 2005, 26, 445-7.
[16] E. Atanassova, D. Spassov, A. Paskaleva. Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors, Microelectron. Eng. 2006, 83, 1918-26.
[17] T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, et al. Oxygen migration at Pt/HfO_2/Pt interface under bias operation, Appl. Phys. Lett. 2010, 97, 082902-4.
[18] Bogdan Golja, Armenag G. Nassibian, C-V hysteresis in metal-oxide- semiconductor structures resulting from Pt doping of the gate oxide, J. Appl. Phys. 1984, 56, 3014-7.
[19] Xu-bing Lu, Kenji Maruyama, Hiroshi Ishiwara, Characterization of HfTaO films for gate oxide and metal-ferroelectric-insulator-silicon device applications, J. Appl. Phys. 2008, 103, 044105-9.
[20] Chuan-Hsi Liu, Hung-Wen Chen, Shung-Yuan Chen, Heng-Sheng Huang, Li-Wei Cheng, Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO_2 stacked gate dielectrics, Appl. Phys. Lett. 2009, 95, 012103-5.
[21] Shi-Jin Ding, Jun Xu, Yue Huang, Qing-Qing Sun, David Wei Zhang, Ming-Fu Li, Electrical characteristics and conduction mechanisms of metal-insulator-metalcapacitors with nanolaminated Al2O3–HfO_2 dielectrics, Appl. Phys. Lett. 2008, 93, 092909-11.
[22]王成刚,韩德栋,杨红,刘晓彦,王玮等. HfO_2高k栅介质漏电流机制和SILC效应,半导体学报,2004, 25, 841-6.
[23] Piyas Samanta, Chin-Lung Cheng, Yao-Jen Lee, Mansun Chan, Electrical stress- induced charge carrier generation/trapping related degradation of HfAlO/SiO_2 and HfO_2 /SiO_2 gate dielectric stacks, J. Appl. Phys. 2009, 105, 124507-14.
[24] T. Yu, X. M. Wu, L. J. Zhuge, Influence of metal electrode(Ag、Au、Pt) on the dielectric and electrical properties of HfTaO capacitors, Advanced Materials Research, 2011, 197-198: 1757-65.
[2] Neil H.E.Weste, David Harris. CMOS VLSI Design: a Circuits and Systems Perspective,北京:中国电力出版社, 2006, 203.
[3] Martin M.Frank, SangBum Kim, et al. Scaling the MOSFET gate dielectric: From high-k to higher-k, Microelectron. Eng. 2009, 86, 1603-8.
[4] Yoshinori Tsuchiya, Masahiko Yoshiki, et al. Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system, Appl. Phys.Lett. 2009, 106, 044510-17.
[5] Xu-bing Lu, Kenji Maruyama, et al. Characterization of HfTaO films for gate oxide and metal-ferroelectric-insulator-silicon device applications, J. Appl.Phys. 2008,103, 044105-9.
[6]杨智超,高K栅介质材料的研究进展,赤峰学院学报,2008, 24, 2.
[7] Jae-Woong Lee, Moon-Ho Ham, Jae-Min Myoung. Gate-controlled transport in GaN nanowire devices with high-k Si3N4 gate dielectrics, Solid State Commun. 2008,145, 327-31.
[8] Byoungjun Park, Kyoungah Cho, Sangsig Kim, Electrical characteristics of polycrystalline Si layers embedded into high-k Al2O3 gate layers, Appl. Surf. Sci. 2008, 254, 7905-8.
[9] M.L. Green, P.K. Schenck, et al.“Higher-K”dielectrics for advanced silicon microelectronic devices: A combinatorial research study, Microelectron. Eng. 2009, 86, 1662-4.
[10] E.Atanassova, D.Spassov, et al. Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors, Microelectron. Eng. 2006, 83, 1918-26.
[11] W. J. Zhu, T. Tamaga Wa, et al. Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics, IEEE Electron Dev. Lett. 2002, 23, 649-51.
[12] Goutam Kumar Dalapati, Yi Tong, Wei-Yip Loh, et al. Electrical and Interfacial Characterization of Atomic Layer Deposited High-K Gate Dielectrics on GaAs for Advanced CMOS Devices, IEEE Trans. Electr. Dev. 2007, 8, 54,1831-7.
[13] Hiroaki Arimura, Naomu Kitano, et al. Excellent electrical properties of TiO2/HfSiO/SiO_2 layered higher-k gate dielectrics with sub-1 nm equivalent oxide thickness, Appl. Phys. Lett. 2008, 92, 212902-4.
[14] Li-ping Feng, Zheng-tang Liu, Ya-ming Shen, Compositional, structural and electronic characteristics of HfO_2 and HfSiO dielectrics prepared by radio frequency magnetron sputtering, Vacuum, 2009,83, 902-5.
[15] C.Zhao, T.Witters, et al. Properties of ALD HfTaxOy high-k layers deposited on chemical silicon oxide, Microelectron. Eng. 2007, 84, 7-10.
[16] Xiongfei Yu, Chunxiang Zhu, M. F. Li. Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline- silicon gate, Appl. Phys. Lett, 2004, 14, 85, 2893-5.
[17] Xiongfei Yu, Chunxiang Zhu, et al. Improvements on Surface Carrier Mobility and Electrical Stability of MOSFETs Using HfTaO Gate Dielectric. IEEE Trans. Electr. Dev. 2004, 12, 51, 2154-60.
[18] Xiongfei Yu, Chunxiang Zhu, et al. Mobility Enhancement in TaN Metal-Gate MOSFETs Using Tantalum Incorporated HfO_2 Gate Dielectric, IEEE Electron Dev. Lett. 2004, 7, 25, 501-3.
[19] M.-H.Cho, K.B.Chung, et al. Change in phase separation and electronic structure of nitrided Hf-silicate films as a function of composition and post-nitridation anneal, Appl. Phys. Lett. 2006, 89, 142908-10.
[20] A.Uedono, K.Ikeuchi, et al. Impact of nitridation on open volumes in HfSiOx studied using monoenergetic positron beams, Appl. Phys. Lett. 2006, 88, 171912-4.
[21] Gaobo Xu, Qiuxia Xu. Thermal stability of HfON, HfSiON and HITaON gate dielectrics, Solid-State and Integrated-Circuit Technology, International Conference on, 2008, 1284-7.
[22] G.Vellianitis, Z.M.Rittersma, et al. Charge trapping in nitrided HfSiO gate dielectric layers, Appl. Phys. Lett. 2006, 89, 092902-4.
[23] H. Kamada, T. Tanimura, et al. Control of oxidation and reduction reactions at HfSiO/Si interfaces through N exposure or incorporation, Appl. Phys. Lett. 2008, 93, 212903-5.
[24] Satoshi Toyoda, Jun Okabayashi, et al. Nitrogen doping and thermal stability in HfSiOxNy studied by photoemission and x-ray absorption spectroscopy, Appl. Phys.Lett. 2005, 87, 182908-10.
[25] A.Uedono, K.Ikeuchi, et al. Characterization of HfSiON gate dielectrics using monoenergetic positron beams. J. Appl. Phys. 2006, 99, 054507-12.
[26] Piyas Samanta, Chin-Lung Cheng, et al. Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/SiO_2 and HfO_2/SiO_2 gate dielectric stacks, J. Appl. Phys. 2009, 105, 124507-14.
[27] Han Zhao, Davood Shahrjerdi, et al. Inversion-type indium phosphide metal-oxide- semiconductor field-effect transistors with equivalent oxide thickness of 12 ? using stacked HfAlOx/HfO_2 gate dielectric, Appl. Phys. Lett. 2008, 92, 253506-8.
[28] C. X. Li, X. F. Zhang, et al. Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer. Solid-State and Integrated-Circuit Technology, International Conference on, 2008,1-4.
[29] X. F. Zhang, J. P. Xu, Improved electrical properties of Ge metal- oxide- semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer, Appl. Phys. Lett. 2008, 92, 262902-4.
[30] M. V. Fischetti, Long-range Coulomb interactions in small Si devices. Part II.Effective electron mobility in thin-oxide structures, J. Appl. Phys. 2001, 2, 89, 1232-50.
[31] T. Dimitrova, E. Atanassova. Electrical and transport properties of RF sputtered Ta2O5 on Si. Solid-state Electron. 1998, 42, 307-15.
[32] G. Hyvert, T. Nguyen, et al. A study on mobility degradation in nMOSFETs with HfO_2 based gate oxide. Mater. Sci Eng., B, 2009, 165, 129-31.
[33]余涛,吴雪梅,诸葛兰剑,《高k栅介质材料的研究现状与前景》,材料导报,2010,24(21): 25-29.
[1]刘金声,离子束沉积薄膜技术及应用,北京:国防工业出版社, 2003.
[2] http://www.ionbeam.com.cn/cpjs03.htm.
[3]洪波,工作参数对SiCN薄膜制备和性质的影响: [学位论文].苏州:苏州大学, 2010.
[4] G. Hyvert, T. Nguyen, et al. A study on mobility degradation in nMOSFETs with HfO_2 based gate oxide. Mater. Sci Eng., B, 2009, 165, 129-31.
[5]杨旭敏. BCN薄膜的制备和表征:[学位论文].苏州:苏州大学, 2009.
[6]周玉,材料分析方法,北京:机械工业出版社, 2004.
[7]赵宗彦, X射线与物质结构,合肥:安徽大学出版社, 2004.6.
[8]吴自勤,王兵,薄膜生长,北京:科学出版社, 2001.
[9] http://www.hudong.com/wiki/扫描电镜.
[10]施敏,半导体器件物理与工艺(第二版),苏州:苏州大学出版社, 2002.
[1] ZHOU Ji-cheng, LUO Di-tian, LI You-zhen, LIU Zheng, Trans. Nonferrous Met. Soc. China, Vol. 2009, 19, 359-63.
[2] J. M. Hutson , R. A. B. Devine and R. D. Schrimpf, Electrical and radiation assisted passivation of the Ta2O5/Si interface, J. Appl. Phys. 2004, 95, 8463-5.
[3] T. Dimitrova and E. Atanassova, Electrical properties of RF sputtered Ta2O5 MOS and MOST structures, Solid-State Electron. 1998, 42, 307-15.
[4] Yasushiro Nishioka, Hiroshi Shinriki and Kiichiro Mukai, Influence of SiO_2 at the Ta2O5/Si interface on dielectric characteristics of Ta2O5 capacitors, J. Appl. Phys. Vol. 61 (1987), p. 2335-8.
[5] G. Q. Lo, D. L. Kwong and S. Lee, Metal-oxide-semiconductor characteristics of chemical vapor deposited Ta2O5 films, Appl. Phys. Lett. 1992, 60, 3286-8.
[6] E.Atanassova, D.Spassov, et al. Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors, Microelectron. Eng. 2006, 83, 1918-26.
[7]刘金声,离子束沉积薄膜技术及应用[M].北京:国防工业出版社, 2003, 1.
[8] X. F. Zhang, J. P. Xu, Improved electrical properties of Ge metal- oxide- semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer, Appl. Phys. Lett. 2008, 92, 262902-4.
[9] C. X. Li, X. F. Zhang, et al. Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer. Solid-State and Integrated-Circuit Technology, International Conference on, 2008,1-4.
[10] N. M. Gasanly, Coexistence of Indirect and Direct Optical Transitions, Refractive Indices, and Oscillator Parameters in TIGaS2, TIGaSe2, and TIInS2 Layered Single Crystals, J. Korean Chem. Soc, 2010, 57, 164-8.
[11]崔永锋,袁志好,表面修饰的二氧化钛纳米材料的结构相变和光吸收性质,物理学报, 2006, 55, 5173-6.
[12]诸葛福伟,高相东,李效民,甘小燕,连续式离子层吸附与反应法沉积CuSCN薄膜及其微观结构、光学特性研究,2009, 24, 8-12.
[13] C. V. Ramana, R. S. Vemuri, Fernandez and A. L. Campbell, Size-effects on theoptical properties of zirconium oxide thin films, 2009, 95, 231905-7.
[14] ZHANG Guangyong, XUE Yiyu, GUO Peitao, WANG Hanhua, MA Zhongjie. Optical Properties and Microstructure of Ta2O5 Thin Films Prepared by Ion Assisted Electron Beam Evaporation, Angew. Chem. Int. Ed. 2008, 5, 23, 632-7.
[15]刘洪祥,熊胜明,李凌辉,张云洞,离子束溅射沉积Ta2O5光学薄膜的实验研究,2004, 31, 41-43(转55).
[16]张幸福,魏爱香,刘毅,磁控反应溅射制备的Ta2O5薄膜的光学与介电性能,2007, 38, 878-80.
[17] Yi-Hao Pai, Chih-Cheng Chou, Fuh-Sheng Shieu, Preparation and optical properties of Ta2O5?x thin films, Mater. Chem. Phys. 2008, 107, 524-7.
[18] Yu-Lun Chueh, Li-Jen Chou, and Zhong Lin Wang. SiO_2/Ta2O5 Core–Shell Nanowires and Nanotubes. Angew. Chem. Int. Ed. 2006, 45, 7773-7.
[19] Beata Zieli?ska, Ryszard J. Kale?czuk, Comparison of NaNbO3 AND NaTaO3 as the photocatalysts in the reaction of hydrogen generation, Pol. J. Chem. Technol. 2010, 12, 33-5.
[20] XU Cheng, QIANG Ying-Huai, ZHU Ya-Bo, GUO Li-Tong, SHAO Jian-Da, FAN Zheng-Xiu. Laser Damage Mechanisms of Amorphous Ta2O5 Films at 1064, 532 and 355nm in One-on-One Regime, Chin. Phys. Lett. 2010, 27, 114205-8.
[21] J. Sikula, J. Pavelka, J. Hlavka, V. Sedlakova, L. Grmela, The tantalum capacitor as a MIS structure in reverse mode, CARTS’01, 2001, 289-292.
[22] Wang-Jae Chun, Akio Ishikawa, et al. Conduction and Valence Band Positions of Ta2O5, TaON, and Ta3N5 by UPS and Electrochemical Methods, J. Phys. Chem. 2003, 107, 1798-1803.
[23] S. K. AL-ANI, A. A. HIGAZY, Study of optical absorption edges in MgO-P2O5 glasses, 1991, 26, 3670-4.
[1] W. J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, T. P. Ma, Effect of Al inclusion in HfO_2 on the physical and electrical properties of the dielectrics, IEEE Electron Dev. Lett. 2002, 23, 649-51.
[2] Kishiro, K., Inoue, N., Chen, S. C., Yoshimaru, M. Structure and Electrical Properties of Thin Ta2O5 Deposited on Metal Electrodes, Jpn. J. Appl. Phys. 1998, 37, 1336-9.
[3] Xiongfei Yu, Chunxiang Zhu, M. F. Li. Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline- silicon gate, Appl. Phys. Lett, 2004, 14, 85, 2893-5.
[4] G. Seguini, M. Perego, S. Spiga, and M. Fanciulli, Conduction band offset of HfO_2 on GaAs, Appl. Phys. Lett. 2007, 91, 192902-4.
[5] Chyuan-Haur Kao, Hsiang Chen, Jing Sing Chiu, Kung Shao Chen, Yu Tsung Pan, Physical and electrical characteristics of the high-k Ta2O5 (tantalum pentoxide) dielectric deposited on the polycrystalline silicon, Appl. Phys. Lett. 2010, 96, 112901-3.
[6] L. Wang, K. Xue, and J. B. Xu, Control of interfacial silicate between HfO_2 and Si by high concentration ozone, Appl. Phys. Lett. 2006, 88, 072903-5.
[7]洪波,工作参数对SiCN薄膜制备和性质的影响: [学位论文].苏州:苏州大学, 2010.
[8] D. H. Triyoso, R. I. Hegde, S. Zollner, M. E. Ramon, S. Kalpat, et al. Impact of titanium addition on film characteristics of HfO_2 gate dielectrics deposited by atomic layer deposition , J. Appl. Phys. 2005, 98, 05410411.
[9] X. F. Zhang, J. P. Xu, Improved electrical properties of Ge metal-oxide- semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer, Appl. Phys. Lett. 2008, 92, 262902-4.
[10] C. X. Li, X. F. Zhang, et al. Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer. Solid-State and Integrated-Circuit Technology, International Conference on, 2008,1-4.
[11] Xu-bing Lu, Kenji Maruyama, et al. Characterization of HfTaO films for gate oxide and metal-ferroelectric-insulator-silicon device applications, J. Appl.Phys. 2008,103, 044105-9.
[12] C.Zhao, T.Witters, et al. Properties of ALD HfTaxOy high-k layers deposited on chemical silicon oxide, Microelectron. Eng. 2007, 84, 7-10.
[13] N. V. Nguyen, Albert V. Davydov, Deane Chandler-Horowitz, Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon, Appl. Phys. Lett. 2005, 87, 192903-5.
[14] Y. B. Zheng, S. J. Wang, C.H.A. Huan, Microstructure-dependent band structure of HfO_2 thin films, Thin Solid Films, 2006, 504, 197-200.
[15] Marie C. Cheynet, Simone Pokrant, Frans D. Tichelaar, Jean-Luc Rouvière, J. Appl. Phys. Crystal structure and band gap determination of HfO_2 thin films, 2007, 101, 054101-7.
[16] H. Jin, S. K. Oh, and H. J. Kang, Band gap and band offsets for ultrathin (HfO_2)x(SiO_2)1?x dielectric films on Si (100), Appl. Phys. Lett. 2006, 89, 122901-3.
[17] Jebreel M. Khoshman, Martin E. Kordesch, Optical properties of a-HfO_2 thin films, Surf. Coat.Technol. 2006, 201, 3530-5.
[18] Julie WIDIEZ, Koji KITA, Kazuyuki TOMIDA, Tomonori NISHIMURA, and Akira TORIUMI, Internal Photoemission over HfO_2 and Hf(1-x)SixO_2 High-k Insulating Barriers: Band Offset and Interfacial Dipole Characterization, Jpn. J. Appl. Phys. 2008, 47, 2410-4.
[19] Deok-Yong Cho, Jae-Min Lee, S.-J. Oh, Hoyoung Jang, J.-Y. Kim, J.-H. Park and A. Tanaka, Influence of oxygen vacancies on the electronic structure of HfO_2 films, Phys. Rev. B, 2007, 76, 165411-5.
[1]施敏,半导体器件物理与工艺[M].苏州:苏州大学出版,2002,164-185.
[2] Indranil De, Deepak Johri, Anadi Srivastava, C. M. Osburn, Impact of gate work function on device performance at the 50nm technology node, Solid-State Electron. 2000, 44, 1077-80.
[3] J. Liu, H. C. Wen, J. P. Lu, D. L. Kwong. Improving Gate-Oxide Reliability by TiN Capping Layer on NiSi FUSI Metal Gate. IEEE Electron Dev. Lett. 2005, 26, 458-60.
[4] Yee-Chia Yeo, Tsu-Jae King, Chenming Hu. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology, J. Appl. Phys. 2002, 92, 7266-71.
[5] Yee-Chia Yeo. Metal gate technology for nanoscale transistors—material selection and process integration issues, Thin Solid Films, 2004, 462-463, 34-41.
[6] H. Y. Yu, B. Van Daele, Kubicek, and K. De Meyer. Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology (Poly-Si/ TiN/SiO_2), IEEE Electron Dev. Lett. 2007, 28, 1089-91.
[7] Yasutaka Tsuda, Hideo Omoto, Katsuto Tanaka, Hisashi Ohsaki. The underlayer effects on the electrical resistivity of Ag thin film, Thin Solid Films, 2006, 502, 223-7.
[8] Midori Kawamura, Yuuki Inami, Yoshio Abe, Katsutaka Sasaki, Thermally Stable Ag Thin Films Modified with Very Thin Al Oxide layers, Jpn. J. Appl. Phys. 2008, 47, 8917-20.
[9] Yuki Kita, Shinichi Yoshida, Takuji Hosoi, Takayoshi Shimura, Kenji Shiraishi, Yasuo Nara, et al. Systematic study on work-function-shift in metal/Hf-based high-k gate stacks, Appl. Phys. Lett. 2009, 94, 122905-7.
[10] In-Sung Park, Taeho Lee, Hankyong Ko, Jinho Ahn, Electrical and Reliability Characteristics of HfO_2 MOS Capacitor with Mo Metal Gate Electrode, J.Korean Phys. Soc. 2006, 49, S760-3.
[11] X. F. Zhang, J. P. Xu, C. X. Li, P. T. Lai, C. L. Chan, J. G. Guan. Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gatedielectric by using TaOxNy interlayer, Appl. Phys. Lett. 2008, 92, 262902-4.
[12] C.X. Li, X.F. Zhang, J. P. Xu, P. T. Lai. Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer. 2008 IEEE International Conference on Electron Devices and Solid-State Circuits. Univ. of Hong Kong, 2008, 1-4.
[13] Hyoungsub Kima, Paul C. McIntyre, Chi On Chui, Krishna C. Saraswat, Susanne Stemmer. Engineering chemically abrupt high-k metal oxide/silicon interfaces using an oxygen-gettering metal overlayer, J. Appl. Phys. 2004, 96, 3467-72.
[14] E. Atanassova, A. Paskaleva, N. Novkovski, M. Georgieva, Conduction mechanisms and reliability of thermal Ta2O5–Si structures and the effect of the gate electrode, J. Appl. Phys. 2005, 97, 094104-14.
[15] Ching-Huang Lu, Gloria M. T. Wong, Michael D. Deal, Wilman Tsai, Prashant Majhi, Chi On Chui, et al. Characteristics and Mechanism of Tunable Work Function Gate Electrodes Using a Bilayer Metal Structure on SiO_2 and HfO_2. IEEE Electron Dev. Lett. 2005, 26, 445-7.
[16] E. Atanassova, D. Spassov, A. Paskaleva. Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors, Microelectron. Eng. 2006, 83, 1918-26.
[17] T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, et al. Oxygen migration at Pt/HfO_2/Pt interface under bias operation, Appl. Phys. Lett. 2010, 97, 082902-4.
[18] Bogdan Golja, Armenag G. Nassibian, C-V hysteresis in metal-oxide- semiconductor structures resulting from Pt doping of the gate oxide, J. Appl. Phys. 1984, 56, 3014-7.
[19] Xu-bing Lu, Kenji Maruyama, Hiroshi Ishiwara, Characterization of HfTaO films for gate oxide and metal-ferroelectric-insulator-silicon device applications, J. Appl. Phys. 2008, 103, 044105-9.
[20] Chuan-Hsi Liu, Hung-Wen Chen, Shung-Yuan Chen, Heng-Sheng Huang, Li-Wei Cheng, Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO_2 stacked gate dielectrics, Appl. Phys. Lett. 2009, 95, 012103-5.
[21] Shi-Jin Ding, Jun Xu, Yue Huang, Qing-Qing Sun, David Wei Zhang, Ming-Fu Li, Electrical characteristics and conduction mechanisms of metal-insulator-metalcapacitors with nanolaminated Al2O3–HfO_2 dielectrics, Appl. Phys. Lett. 2008, 93, 092909-11.
[22]王成刚,韩德栋,杨红,刘晓彦,王玮等. HfO_2高k栅介质漏电流机制和SILC效应,半导体学报,2004, 25, 841-6.
[23] Piyas Samanta, Chin-Lung Cheng, Yao-Jen Lee, Mansun Chan, Electrical stress- induced charge carrier generation/trapping related degradation of HfAlO/SiO_2 and HfO_2 /SiO_2 gate dielectric stacks, J. Appl. Phys. 2009, 105, 124507-14.
[24] T. Yu, X. M. Wu, L. J. Zhuge, Influence of metal electrode(Ag、Au、Pt) on the dielectric and electrical properties of HfTaO capacitors, Advanced Materials Research, 2011, 197-198: 1757-65.