部分绝缘键合SOI新结构及应用基础研究
|
摘要
基于SOI相关基础理论和技术实践，源自光机电新器件开发需求，在综合Si良好导热导电与SOI优良隔离特性基础上，本文提出了一种兼具硅和SOI优势的新型部分绝缘键合SOI结构，并就其所面临的预键合量化微观作用机理、应用基础理论和关键工艺技术进行了探讨与分析讨论。
首先，通过对部分绝缘键合SOI预键合3种主要微观作用力的比较研究，获得了平板间Van der Waals作用力模型及其计算方法。结果指出，亲水性硅片键合中氢键作用力是主要因素，而疏水性硅片键合中主要因素为Van der Waals作用力，毛细作用和大气压作用则是可忽略的次要因素。
计算表明，疏水性硅片预键合Van derWaals作用能约为124mJ／m~2，对于4英寸硅片，相应键合吸引力是9．73×10~6N；亲水性硅片预键合氢键作用能约为193．3mJ／m~2；毛细作用力约2．55×10~(-3)～8．49×10~(-1) N，毛细作用相关的大气压力系7．93×10~2N。
考虑实际情况中存在颗粒、台阶情况下，硅片预键合时封闭的微量气体是键合不可忽视的不利因素。预键合过程是实际硅片键合面非理想平整性所占百分比引起的硅片弹性形变与键合面微观作用力博弈结果。此过程与预键合实际接触面百分比和硅片间距两个主要因素有关。对4英寸硅片，预键合硅片间距小于5nm时，键合面微观吸引力占优势，并导致动态正反馈，引起所谓“键合波”，使硅片能够键合。在100mJ／m~2预键合能假设下，键合硅片接触面间距约为0．22nm。通过比较分析，发现键合硅片采用接触面积来计算毛细作用力是不适合的，而把这种毛细作用力看作边缘曲线而不是面积作用力则更为合理。
其次，大电流功率集成电路广泛存在埋层结构的比导通电阻优化是所述部分绝缘键合SOI面临的另一基本问题。对此，提出了简化二维和三维模型。得到的结论是在二维情况下，该结构的电阻具有自限制特性，比电阻具有近似的随尺寸增加而线性增加特性；在三维情况下，其埋层电阻不再具有自限制特性，但比电阻仍然有同样近似线性增加的特性。实验和仿真分析表明，该模型在导通电阻变化的拐点预测上有较高精度，而此结构电阻实验数据较模型预测值约小28％。
再者，基于兼容部分绝缘键合SOI工艺的VDMOS和X射线的不同负载功率情况下辐射实验，进行了部分绝缘键合SOI在功率集成领域所面临的抗总剂量辐射应用探索。据器件X射线辐射亚阈值Ⅰ-Ⅴ曲线，观察到了器件大负载功率在自热退火情况下与经典文献不一致特征，且结合经典理论，提出了界面陷阱的导电假设；并构建了与实验数据相吻合的器件模型，导出了新增氧化物陷阱正电荷与强反型前最大界面陷阱负电荷近似相等约为6．78×10~(11)cm~(-2)，强反型后最大界面陷阱负电荷减小到1．54×10~(11)cm~(-2)的结果。
鉴于实验研究与可行性验证的考虑，提出了LPCVD和外延多晶作为键合界面过渡层方法，从而使该结构的键合完整率大于85％，键合界面电阻小于5×10~(-4)Ω．cm~2。同时，开展了部分绝缘键合SOI集成垂直导电VDMOS的BCD工艺和器件研究；实验结果显示，其VDMOS击穿电压为160V，导通电阻0．3Ω，比导通电阻26mΩ．cm~2，NPN、PMOS、NMOS击穿电压分别是50V、35V、30V，NPN电流增益120，截止频率700MHz。
预计部分绝缘键合SOI结构及相关技术可望用于新型集成器件，尤其是需厚硅膜的汽车电子、抗辐射、强电磁脉冲环境下单片集成器件、微电子机械系统MEMS和光集成电路OEIC等领域，并希就此主题引起相应的关注与交流讨论。
From basic theory and technology practice of SOI for new optoelectronic andMicro-Electro-Mechanical Systems application requirement,a novel Partial InsulationBonding SOI (PIB/SOI) structure is proposed due to its good thermal and electricalconductivity of silicon without losing normal SOI's good isolation property.Severalinterrelated basic microcosmic forces mechanism of wafer pro-bond and application keytechnical problems are diccussed and researched.
The first problem interrelated with PIB/SOI stucture is how microcosmic forces orintermolecular forces affect pro-bond of silicon wafer.Three type microcosmic forceshave been compared and analysed.Three main conclusions have been drawn:microcosmic forces of hydrophilic silicon wafer bonding attribute to hydroen bond,hydrophobic silicon wafer bonding attribute to Van der Waals forces,capillaryimmersion forces and interrelated atmospheric pressure forces are neglectable.Analysiscalculation indicate that,for 4 inch wafer,Van der Waals interplay energy is about124mJ/m~2,corresponding forces 9.73×10~6 N,and,hydroen bond interplay energy about193.3mJ/m~2 to hydrophilic bonding,capillary immersion forces about 2.55×10~(-3)～8.49×10~(-1) N,and corresponding atmospheric pressure forces 7.93×10~2 N.
Also,the micro volume gas sealed by tiny grain caused by actually clean roomentironment and micro-step caused by silicon process is a signify disbenefit factor forwafer pro-bond.The successful or not of wafer bonding is a zero sum game caused byhow much area percent of wafer surface is absolute flatness which increase pro-bondforces against elastic deflection which decrease pro-bond forces.This process has twofactor,most important one is how close the two wafer bonding surface gap can be,another is how many percent area of two wafer bonding surface can close with a givenminimum distance.Calculation indicate that this given minimum distance is about 5nmfor 4 inch wafer.When the gap of two wafer bonding surface is less than 5nm,microcosmic attraction is dominance,which cause to positive feedback and thephenomenon which is called“bonding wave”,then,the wafer bond at a given percentcontact surface area of two wafer finally.On supposition 100mJ/m~2 pro-bond energy,gap distance of two wafer surface is 0.22nm.Viewpoint of capillary immersion forces can only be calculated as beeline or curve line or point rather than a plane or curvedsurface is presented.
Secondly,resistance optimization of IC with bury layer,especially for big currentpower IC is another basic problem interrelated with PIB/SOI stucture.Simplification2-D and 3-D model are proposed to solve it.The 2-D model indicate that integrateddevice structure with bury layer has self-limitation resistance property and specificresistance increase almost linearly with device area.The 3-D model has no property ofself-limitation resistance,while the result is the same as that for specific resistance of2-D structure.Experiment and simulation indicate that,experiment value is smaller thanmodel predicted value almost 28%,while inflection point prediction of resistance curveis accurate.
Thirdly,problem interrelated with PIB/SOI stucture is total dose radiationcharacter of PIB/SOI device,especially for VDMOS with different load powerdissipation case.Based on measurement of VDMOS I-V curve after X-ray radiationunder diverse power dissipation,it is found that,property of new interface traps inducedby X-ray radiation with self annealing VDMOS sample,i.e.with big power dissipation,does not conform to existing theory commendably.For explaining this characters,combined with traditional theory,a assumption of interface trap current conductiveproperty is proposed and a model is exported,which gives a more exact result.Newoxide charges,maximum interface trap negative charges before and after stronginvention is 6.78×10~(11)cm~(-2),-6.78×10~(11)cm~(-2),-1.54×10~(11)cm~(-2) according to model.
For experiment and realization,a method of LPCVD and epitaxy transitionpolysilicon layer is introduced,which make integrality percentage of this new waferstructure more than 85% and contact specific resistance of Si-Si bonding interface lessthan 5×10~(-4)Ω.cm~2.BCD process with integrated vertical conductive VDMOS has beenmade,and breakdown voltage of this BCD structure VDMOS is 160V,on-resistance0.3Ω,specific on-resistance 26mΩ·cm~2,breakdown voltage of NPN/PMOS/NMOS50V/35V/30V respectively,NPN current gain and cut-off frequency 120 and 700MHzrespectively.
This PIB/SOI stucture may be an useful technique in application of automotiveelectronics,radiation hardened and strong Electromagnetic Pulse (EMP),high voltageIC,high reliability IC,MEMS and OEIC.
首先，通过对部分绝缘键合SOI预键合3种主要微观作用力的比较研究，获得了平板间Van der Waals作用力模型及其计算方法。结果指出，亲水性硅片键合中氢键作用力是主要因素，而疏水性硅片键合中主要因素为Van der Waals作用力，毛细作用和大气压作用则是可忽略的次要因素。
计算表明，疏水性硅片预键合Van derWaals作用能约为124mJ／m~2，对于4英寸硅片，相应键合吸引力是9．73×10~6N；亲水性硅片预键合氢键作用能约为193．3mJ／m~2；毛细作用力约2．55×10~(-3)～8．49×10~(-1) N，毛细作用相关的大气压力系7．93×10~2N。
考虑实际情况中存在颗粒、台阶情况下，硅片预键合时封闭的微量气体是键合不可忽视的不利因素。预键合过程是实际硅片键合面非理想平整性所占百分比引起的硅片弹性形变与键合面微观作用力博弈结果。此过程与预键合实际接触面百分比和硅片间距两个主要因素有关。对4英寸硅片，预键合硅片间距小于5nm时，键合面微观吸引力占优势，并导致动态正反馈，引起所谓“键合波”，使硅片能够键合。在100mJ／m~2预键合能假设下，键合硅片接触面间距约为0．22nm。通过比较分析，发现键合硅片采用接触面积来计算毛细作用力是不适合的，而把这种毛细作用力看作边缘曲线而不是面积作用力则更为合理。
其次，大电流功率集成电路广泛存在埋层结构的比导通电阻优化是所述部分绝缘键合SOI面临的另一基本问题。对此，提出了简化二维和三维模型。得到的结论是在二维情况下，该结构的电阻具有自限制特性，比电阻具有近似的随尺寸增加而线性增加特性；在三维情况下，其埋层电阻不再具有自限制特性，但比电阻仍然有同样近似线性增加的特性。实验和仿真分析表明，该模型在导通电阻变化的拐点预测上有较高精度，而此结构电阻实验数据较模型预测值约小28％。
再者，基于兼容部分绝缘键合SOI工艺的VDMOS和X射线的不同负载功率情况下辐射实验，进行了部分绝缘键合SOI在功率集成领域所面临的抗总剂量辐射应用探索。据器件X射线辐射亚阈值Ⅰ-Ⅴ曲线，观察到了器件大负载功率在自热退火情况下与经典文献不一致特征，且结合经典理论，提出了界面陷阱的导电假设；并构建了与实验数据相吻合的器件模型，导出了新增氧化物陷阱正电荷与强反型前最大界面陷阱负电荷近似相等约为6．78×10~(11)cm~(-2)，强反型后最大界面陷阱负电荷减小到1．54×10~(11)cm~(-2)的结果。
鉴于实验研究与可行性验证的考虑，提出了LPCVD和外延多晶作为键合界面过渡层方法，从而使该结构的键合完整率大于85％，键合界面电阻小于5×10~(-4)Ω．cm~2。同时，开展了部分绝缘键合SOI集成垂直导电VDMOS的BCD工艺和器件研究；实验结果显示，其VDMOS击穿电压为160V，导通电阻0．3Ω，比导通电阻26mΩ．cm~2，NPN、PMOS、NMOS击穿电压分别是50V、35V、30V，NPN电流增益120，截止频率700MHz。
预计部分绝缘键合SOI结构及相关技术可望用于新型集成器件，尤其是需厚硅膜的汽车电子、抗辐射、强电磁脉冲环境下单片集成器件、微电子机械系统MEMS和光集成电路OEIC等领域，并希就此主题引起相应的关注与交流讨论。
From basic theory and technology practice of SOI for new optoelectronic andMicro-Electro-Mechanical Systems application requirement,a novel Partial InsulationBonding SOI (PIB/SOI) structure is proposed due to its good thermal and electricalconductivity of silicon without losing normal SOI's good isolation property.Severalinterrelated basic microcosmic forces mechanism of wafer pro-bond and application keytechnical problems are diccussed and researched.
The first problem interrelated with PIB/SOI stucture is how microcosmic forces orintermolecular forces affect pro-bond of silicon wafer.Three type microcosmic forceshave been compared and analysed.Three main conclusions have been drawn:microcosmic forces of hydrophilic silicon wafer bonding attribute to hydroen bond,hydrophobic silicon wafer bonding attribute to Van der Waals forces,capillaryimmersion forces and interrelated atmospheric pressure forces are neglectable.Analysiscalculation indicate that,for 4 inch wafer,Van der Waals interplay energy is about124mJ/m~2,corresponding forces 9.73×10~6 N,and,hydroen bond interplay energy about193.3mJ/m~2 to hydrophilic bonding,capillary immersion forces about 2.55×10~(-3)～8.49×10~(-1) N,and corresponding atmospheric pressure forces 7.93×10~2 N.
Also,the micro volume gas sealed by tiny grain caused by actually clean roomentironment and micro-step caused by silicon process is a signify disbenefit factor forwafer pro-bond.The successful or not of wafer bonding is a zero sum game caused byhow much area percent of wafer surface is absolute flatness which increase pro-bondforces against elastic deflection which decrease pro-bond forces.This process has twofactor,most important one is how close the two wafer bonding surface gap can be,another is how many percent area of two wafer bonding surface can close with a givenminimum distance.Calculation indicate that this given minimum distance is about 5nmfor 4 inch wafer.When the gap of two wafer bonding surface is less than 5nm,microcosmic attraction is dominance,which cause to positive feedback and thephenomenon which is called“bonding wave”,then,the wafer bond at a given percentcontact surface area of two wafer finally.On supposition 100mJ/m~2 pro-bond energy,gap distance of two wafer surface is 0.22nm.Viewpoint of capillary immersion forces can only be calculated as beeline or curve line or point rather than a plane or curvedsurface is presented.
Secondly,resistance optimization of IC with bury layer,especially for big currentpower IC is another basic problem interrelated with PIB/SOI stucture.Simplification2-D and 3-D model are proposed to solve it.The 2-D model indicate that integrateddevice structure with bury layer has self-limitation resistance property and specificresistance increase almost linearly with device area.The 3-D model has no property ofself-limitation resistance,while the result is the same as that for specific resistance of2-D structure.Experiment and simulation indicate that,experiment value is smaller thanmodel predicted value almost 28%,while inflection point prediction of resistance curveis accurate.
Thirdly,problem interrelated with PIB/SOI stucture is total dose radiationcharacter of PIB/SOI device,especially for VDMOS with different load powerdissipation case.Based on measurement of VDMOS I-V curve after X-ray radiationunder diverse power dissipation,it is found that,property of new interface traps inducedby X-ray radiation with self annealing VDMOS sample,i.e.with big power dissipation,does not conform to existing theory commendably.For explaining this characters,combined with traditional theory,a assumption of interface trap current conductiveproperty is proposed and a model is exported,which gives a more exact result.Newoxide charges,maximum interface trap negative charges before and after stronginvention is 6.78×10~(11)cm~(-2),-6.78×10~(11)cm~(-2),-1.54×10~(11)cm~(-2) according to model.
For experiment and realization,a method of LPCVD and epitaxy transitionpolysilicon layer is introduced,which make integrality percentage of this new waferstructure more than 85% and contact specific resistance of Si-Si bonding interface lessthan 5×10~(-4)Ω.cm~2.BCD process with integrated vertical conductive VDMOS has beenmade,and breakdown voltage of this BCD structure VDMOS is 160V,on-resistance0.3Ω,specific on-resistance 26mΩ·cm~2,breakdown voltage of NPN/PMOS/NMOS50V/35V/30V respectively,NPN current gain and cut-off frequency 120 and 700MHzrespectively.
This PIB/SOI stucture may be an useful technique in application of automotiveelectronics,radiation hardened and strong Electromagnetic Pulse (EMP),high voltageIC,high reliability IC,MEMS and OEIC.
引文
[1]Q.Y.Tong,U.Gosele.Semiconductor wafer bonding:science and technology.New York: John Wiley&Sons,Inc.1999
[2]M.Alexe,U.U.Gosele.Wafer bonding applications and technology.Heidelberg: Spinger,2004
[3]林成鲁．SOI-纳米技术时代的高端硅基材料．微电子学，2008，Vol．38(1)：44-49
[4]陈猛，王一波．SOI材料的发展历史、应用现状与发展新趋势(上)．中国集成电路，2007，Vol．98(7)：75-79
[5]陈猛，王一波．SOI材料的发展历史、应用现状与发展新趋势(下)．中国集成电路，2007， Vol．99(8)：44-．48
[6]J．P Colinge著．SOI技术2l世纪的硅集成电路技术，武国英等译．北京：科学出版社，1993，160-185
[7]Xiaorong Luo,Bo Zhang,Zhaoji Li,et al.A Novel 700-V SOI LDMOS With Double-Sided Trench.IEEE ELECTRON DEVICE LETTERS.2007,VOL.28(5):422-424
[8]A.Nakagawa,K.Watanabe,Y.Yamaguchi,et al.High voltage new driver IC technique based on silicon wafer direct-bonding(SDB).IEEE PESC 88 Rcord 19th Annual,1988,(2): 1325-1329
[9]T.Ohoka,T.Yoshitake.A wafer bonded SOI structure for intelligent power ICs.IEEE 5th International Symposium on Power Semiconductor Devices and ICs,1993:119～ 123
[10]FUJINO SEIJI,HIMI HIROAKI,FUKADA TSUYOSHI,et al.Device Applications Using Bonded SOI Wafers.DENSO Tech Rev,2005,10(2): 17-24
[11]F.Kawai,T.Onishi,T.Kamiya,et al.Multi-voltage SOI-BiCDMOS for 14V&42V automotive applications.IEEE Proe of ISPSD'04,2004:165-168
[12]T.Mizoguchi,T.Shirasawa,M.Mori,et al.600V 25A Dielectrically Isolated Power IC with Vertical IGBT.IEEE Proc of ISPSD' 1991,1991:40-44
[13]Naoto Fujishima,Akio Kitamura,Yoshihiko Nagayasu.High-Performance Lateral DMOSFET with Oxide Sidewall-Spacers.IEEE Proc of ISPSD'1994,1994:345-354
[14]Y.Sugawara,Y.Inoue,S.Ogawa,S.Kurita.NEW DIELECTRIC ISOLATION FOR HIGH VOLTAGE POWER ICs BY SINGLE SILICON POLY SILICON DIRECT BONDING(SPSDB) TECHNIQUE.IEEE Proc of ISPSD'1992,1992:316-321
[15]Ken-ya Kobayashi,Tomohiro Hamajima,Hiroaki Kikuchi.AN INTELLIGENT POWER DEVICE USING POLY-Si SANDWICHED WAFER BONDING TECHNIQUE.IEEE Proc ofISPSD'1995,1995:58-62
[16]E Arnold,S Merchant,M Amato,S Mukherjee,et al.COMPARISON OF JUNCTION-ISOLATED AND SOI HIGH-VOLTAGE DEVICES OPERATING IN THE SOURCE-FOLLOWER MODE.IEEE Proc of ISPSD'1992,1992:242-243
[17]T Aso,H Mizuide,H Kitaguchi,et al.A novel dielectric isolation process using molten SiGe.IEEE Proe oflSPSD'1993,1993:08-112
[18]Abe T,Katayama M,Shin-Etsu Hondotai,et al.Bonded SOl Technologies for High Voltage Applications.IEEE Proc of ISPSD'1996,1996:41-49
[19]G.S.Chung,S.Kawahito,M.Ishida,et al.High-Resolution Pressure Sensors Fabricated by Silicon Wafer Direct Bonding.Electronics Letters,1991,Vol.27(12): 1098-1099
[20]Ching-Fa Yeh,Shyang Hwang-Leu,Jui-I Tsai.The advanced improvement of PN mesa junction diode prepared by silicon-wafer direct bonding.IEEE International Symposium on VLSI Technology,Systems,and Applications,1991:136-140
[21]Yu Chen,Kavitha D.Buddharaju,et al.Superjunetion Power LDMOS on Partial SOI Platform.IEEE Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs,Jeju,Korea: 2007,177-180
[22]F Udrea,A Popescu,W Milne.Breakdown analysis in JI,SOI and partial SOI power structures.IEEE Proc Int SOI Conf,1997:102-103
[23]Ren Changhong,Cai Jun,Y.C.Liang,et al.The partial silicon-on-insulator technology for RF power LDMOSFET devices and on-chip microinductors.IEEE Trans Electron Divices,2002,49(12): 2271-2278
[24]H T Lira,F Udrea,W Milne,et al.Switching Speed Enhancement of the LDMOSFETs using Partial-SOI Technology.IEEE Proc.Intl.SOI Conf.1998:53-54
[25]Guangyu Huang,Cher Ming Tan,Zhenghao Gan,et al.Finite Element Modeling of Residual Mechanical Stress in Partial SOI Structure Due to Wafer Bonding Processing.Proceedings of 1 1th IPFA,2004:189-192
[26]Cheng Xinhong,Yang Wenwei,Song Zhaorui,et al.A Novel LDMOS Structure in Thin Film Patterned-SOI Technology with a Silicon Window Beneath P Well.Chinese Journal of Semiconductors,2004,Vol.25(12): 1581-1585
[27]N.Joachim,Burghartz,D.John,et al.Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics.IEEE ELECTRON DEVICE LETTERS,1992,Vol.13(8): 424-426
[28]K.Kobayashi,T.Hamajima,H.Kikuchi,et al.Application of partially bonded SOI structure to an intelligent power device having vertical DMOSFET.IEEE Proc of ISPSD'1997,1997: 309-312
[29]A Laporte,G Sarrabayrouse,L Lescouzeres,et al.Influence of the Mechanical Conditions on the Electrical and Structural Properties of the Interface between Directly Bonded Silicon Wafers.IEEE Proc.of the 6th Internat Symposium on Power Semiconductor Devices & IC's,Davos,Switzerland,1994,293-296
[30]李文钧，程新红，宋朝瑞，等．射频无线应用的体连接和图形化SOI LDMOSFET的比较．半导体学报，2006，Vol．27(13)：32-35
[31]程新红，宋朝瑞，俞跃辉，等．新型PSOI LDMOSFET的结构优化．半导体学报，2006，Vol．31(6)：444-447
[32]王小松，李泽宏，王一鸣．n埋层PSOI结构射频功率LDMOS的输出特性．半导体学报，2006，Vol．27(7)：1269-1273
[33]林羲，何平，田立林，等．采用局域注氧技术制备的新型DSOI场效应晶体管的热特性．半导体学报，2003，Vol．24(2)：1 17-121
[34]段宝兴，张波，李肇基．埋空隙PSOI结构的耐压分析．半导体学报，2005，Vol．26(9)：1818-1822
[35]段宝兴，张波，李肇基．双面阶梯埋氧 SOI结构的耐压分析．半导体学报，2006，Vol．27(5)：886-891
[36]罗小蓉，张波，李肇基，等．部分局域电荷槽SOI高压器件新结构．半导体学报，2006，Vol．27(1)：1 15-120
[37]罗小蓉，李肇基，张波，等．屏蔽槽SOI高压器件新结构和耐压机理．半导体学报，2005，Vol．26(11)：2154-2158
[38]段宝兴，张波，李肇基．具有P型埋层PSOI结构的耐压分析半导体学报，2005，Vol．26(11)：2149-2153
[39]段宝兴，张波，李肇基．高阻衬底上具有n+浮空层的横 Super Junction MOSFETs．半导体学报，2007，Vo1．28(2)：166-170
[40]罗小蓉，李肇基，张波．高散热变k介质埋层SOI高压功率器件．半导体学报，2006，Vol．27(10)：1832-1837
[41]罗小蓉，李肇基，张波．复合介质层SOI高压器件电场分布解析模型．半导体学报，2006，Vol．27(11)：2005-2010
[42]罗小蓉，李肇基，张波．可变低k介质层SOI LDMOS高压器件的耐压特性．半导体学报，2006，Vol．27(5)：88 1-885
[43]郭宇锋，李肇基，张波，等．具有非平面埋氧层的新型SOI材料的制备．半导体学报，2007，Vol．28(9)：141 5-1419
[44]解灵运．基于SOI的二维光子晶体平板波导的研究：[工学硕士学位论文]．北京：清华大学，2004
[45]唐衍哲．SOI材料上紧凑结构波导器件及阵列波导光栅器件的研制：[博士学位论文]．杭州：浙江大学，2004
[46]樊中朝，余金中，陈少武，等．ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响．半导体学报，2004，Vol．25(1 1)：1500-1504
[47]魏红振，余金中，张小峰．SOI及GeSi／Si脊形光波导的模式与波导几何结构．半导体学报，2001，Vol．21(5)：556-558
[48]陈媛媛，余金中，陈少武．SOI波导弯曲损耗改善方法的研究．红外与毫米波学报，2005，Vol．24(1)：53-55
[49]韩晓峰，吴亚明．一种基于SOI材料的直波导可调谐光衰减器．功能材料与器件学报，2004，Vo1．10(3)：355-358
[50]方青，李芳，刘育梁．基于SOI材料的阵列波导光栅的制作．红外与毫米波学报，2005，Vol．24(2)：143-146
[51]Rob Legtenberg,Harrie A.C.Tilmans,Job Elders,et al.Stiction of surface micromachined structures after rinsing and drying: model and investigation of adhesion mechanisms.Sensors and Actuators A,43,1994:230-238
[52]浙江大学普通化学教研组．普通化学．北京：高等教育出版社，1985
[53]唐永建，赵永宽，蒋伟阳，等．等温环境中激光惯性约束聚变冷冻靶丸内部液氢层分布．物理学报，1999，Vol．48(12)：2208-2214
[54]F.London.The General Theory of Molecular Forces.Trans.Faraday Soc.,1937,Vol.189(33): 8-26
[55]E.Yablonovitch,T.Sands,D.M.Hwang,et al.Van der Waals bonding of GaAs on Pd leads to a permanent,solid-phase-topotaxial,metallurgical bood.Appt.Phys.Lett.,1991,Vol.9(24): 3159-3161
[56]J.P.Bouanich.Site-site Lennard-Jones potential parameters for N2,O2,H2,CO and CO2.J.Quant.Spectrosc.Radiat.Transfer,1992,Vol.47(4): 243-250
[57]J.C.Slattery,E.S.Oh,Kaibin Fu “Extension of Continuum Mechanics to the nanoscale” Chemical Engineering Science,2004,Vol.59(21): 4621-4635
[58]Gholamreza Vakili-Nezhaad.Investigation of the Role of Coordination Number in the Lennard-Jones-Devonshire Theory.CROATICA CHEMICA ACTA(CCACAA),2007,Vol.80(2): 155-158
[59]Subir Bhattacharjee,Menachem Elimelech,Michal Borkovec.DLVO Interaction between Colloidal Particles: Beyond Derjaguin's Approximation.CROATICA CHEMICA ACTA,1998,Vol.71(4):883-903
[60]J.G.Dash,A.W.Rempel,J.S.Wettlaufer.The physics of premelted ice and its geophysical consequences.REVIEWS OF MODERN PHYSICS,2006,Vol.78(3):695-741
[61]V.N.Paunov,R.I.Dimova,P.A.Kralchevsky,et al.The Hydration Repulsion between Charged Surfaces as an Interplay of Volume Exclusion and Dielectric Saturation Effects.Journal of Colloid and Interface Science,1996,Vol.182(1):239-248
[62]M.A.Rodriguez-Valverde,M.A.Cabrerizo-Vilchez,A.Paez-Duenas.Stability of highly charged particles: bitumen-in-water dispersions.Colloids and Surface A: Physicochem Eng Aspects,2003,222:233-251
[63]Liguang Wang,Roe-Hoan Yoon.Hydrophobic Forces in the Foam Films Stabilized by Sodium Dodecyl Sulfate: Effect of Electrolyte.Langmuir.,2004,Vol.20(26): 11457-11464
[64]S.E.Truesdail,J.Lukasik,S.R.Farrah,et al.Analysis of Bacterial Deposition on Metal(Hydr)oxide-Coated Sand Filter Media.Journal of Colloid and Interface Science,1998,Vol.203(2):369-378.
[65]S.M.Oversteegen,H.N.W.Lekkerkerker.Testing the Derjaguin approximation for colloidal mixtures of spheres and disks.PHYSICAL REVIEW E 68,2003,021404:1-6
[66]S.Rentsch,R.Pericet-Camara,G.Papastavrou.Probing the validity of the Derjaguin approximation for heterogeneous colloidal particles.Physical Chemistry Chemical Physics,2006,Vol.8(21):2531-2538
[67]Samuel Rentsch,Ramon Pericet-Camara,Georg Papastavrou,et al.Probing the validity of the Derjaguin approximation for heterogeneous colloidal particles.Phys.Chem.Chem.Phys.,2006,8:2531-2538
[68]G.Palasantzas,G.Backx.Flnid interface fluctuations within the generalized Derjaguin approximation.PHYSICAL REVIEW B 56,1997,6878-6481
[69]B.Lesyng,G.A.Jeffrey,H.Maluszynska.A model for the hydrogen-bond-length probability distributions in the crystal structures of small-molecule components of the nucleic acids.Acta Crystallographica Section B Structural Science.,1988,Vol.44:193-198
[70]Young Kee Kang.Which Functional Form Is Appropriate for Hydrogen Bond of Amides.?.J.Phys.Chem.B,2000,Vo1.104(34):8321-8326
[71]P.J.van Zwol,G.Palasantzas,J.Th.M.De Hosson.Influence of random roughness on the adhesion between metal surfaces due to capillary condensation.APPLIED PHYSICS LETTERS,2007,Vol.91(10),101905:1-3
[72]R.N.Wenzel.Surface Roughness and Contact Angle.J Phys.Colloid Chem.,1949,Vol.53: 1466-1467
[73]赵宁，卢晓英，张晓艳，等．超疏水表面的研究进展．化学进展，2007，Vol．19(6)：860-871
[74]Mingyan He,Amy Szuchmacher Blum,D.Erie Aston,et al.Critical phenomena of water bridges in nanoasperity contacts.JOURNAL OF CHEMICAL PHYSICS,2001,Vol.114(3): 1355-1360
[75]CAREL J.VAN OSS,MANOJ K.CHAUDHURY,ROBERT J.GOOD.Interfacial Lifshitz-van der Waals and Polar Interactions in Macroscopic Systems,Chemical Reviews,1988,Vol.88(6):927-941
[76]Lennart Bergstrom.Hamaker constants of inorganic materials.Advancesin Colloid and Interface Science.1997,70(1): 125-169
[77]M.D.Morariu,E.Schaffer,U.Steiner.Molecular Forces Caused by the Confinement of Thermal Noise.Physical Review Letters,2004,Vol.92(15),156102:1-4
[78]M.D.Morariu,E.Schaffer,U.Steiner.Capillary instabilities by fluctuation induced forces.The European Physical Journal E 12,2003:375-381
[79]Oded Kenneth,Israel Klich.Opposites Attract:A Theorem about the Casimir Force.Physical Review Letters,2006,Vol.97(16),160401:1-4
[80]J.N.Munday,Federico Capasso.Precision measurement of the Casimir-Lifshitz force in a fluid.Physical Review.A,2007,Vol.75(6),060102(R): 1-4
[81]R.H.French,R.M.Cannon,L.K.DeNoyer,et al.Full Spectral Calculation of Non-Retarded Hamaker Constants for Ceramic Systems from Interband Transition Strengths.Solid State Ionics,1995,Vol.75:13-33
[82]G.Palasantzas.Self-affine roughness influence on the Casimir effect.Journal of Applied Physics,2005,Vol.97(12),126104:1-3
[83]Sung Nae Cho.Casimir Force in Non-Planar Geometric Configurations:[Doctor of Philosophy in Physics].Virginia: Virginia Polytechnic Institute and State University,2004
[84]谢处方，饶克谨．电磁场与电磁波．北京：高等教育出版社，1987，94
[85]B.V.Derjaguin,Y.I.Rabinovich,N.V.Churaev.Direct measurement of molecular forces.Nature,1978,Voi.272:313-318
[86]H.D.Ackler,R.H.French,Y.M.Chiang.Comparison of Hamakcr Constants for Ceramic Systems with Interrvening Vacuum or Water:.From Force Laws and Physical Properties.Journal of Colloid and Interface Science,1996,Vol.179:460-469
[87]T.J.Senden and C.J.Drummond.Surface Chemistry and Tip-Sample Interactions in Atomic Force Microscopy.Colloids Surf.A,1995,Vol.94:29-51
[88]Hongming Li.IMPACT OF COHESION FORCES ON PARTICLE MIXING AND SEGREGATION :[Doctor of Philosophy].Pittsburgh: Univcrsity of Pittsburgh,2005
[89]A.D.BUCKINGHAM,B.D.UTTING.INTERMOLECULAR FORCES.Annu.Rev.Phys.Chem.,1970,21:287-316
[90]Laurent Pizzagalli,Alexis Baratoff.Theory of single atom manipulation with a scanning probe tip:Force signatures,constant-height,and constant-force scans.PHYSICAL REVIEW B 68,2003,115427:1-12
[91]W.Xu,B.L.Blackford,J.G.Cordes.Atomic Force Microscope Measurements of Long-Range Forces Near Lipid-Coated Surfaces in Electrolytes.Biophysical Journal,1997,Vol.72(3): 1404-1413
[92]E.A.Olson,M.Yu.Efremov,M.Zhang.Size-dependent melting ofBi nanoparticles.J.Appl.Phys.Vol.97,2005,034304:1-9
[93]Robert H.French.Origins and applications of London dispersion forces and Hamaker constants in ceramics.Journal of the American Ceramic Society,2000,Vol.83(9):2117-2146
[94]C.Argento,R.H.French.Parametric tip model and force-distance relation for Hamakcr constant determination from atomic force microscopy.J.Appl.Phys.,1996,Vol.80(11): 6081-6090
[95]Igor Sokolov,Quy K.Ong,Hasan Shodiev,et al.AFM study of forces between silica,silicon nitride and polyurethane pads.Journal of Colloid and Interface Science,2006,Vol.300(2): 475-481
[96]Emanuel Bertrand,Harvey Dobbs,Daniel Broseta,et al.First-Order and Critical Wetting of Alkanes on Water.PHYSICAL REVIEW LETTERS.2000,Vol 85(6): 1282-1285
[97]P.Weronski,J.Y.Walz,M.Elimelech.Effect of depletion interactions on transport of colloidal particles in porous media.Journal of Colloid and Interface Science,2003,Vol.262: 372-383
[98]M.Sferrazza,M.Heppenstall-Butler,R.Cubitt,et al.Interfacial Instability Driven by Dispersive Forces: The Early Stages of Spinodal Dewetting of a Thin Polymer Film on a Polymer Substrate.Physical Review Letters,1998,Vol.81(23):5173-5176
[99]C.D.Dushkin,P.A.Kralchevsky,V.N.Paunov,et al.Torsion Balance for Measurement of Capillary Immersion Forces.Langmuir.,1996,Vol.12(3):641-651
[100]W.Sun,P.Neuzil,T.S.Kustandi,et al.The nature of the gecko lizard adhesive force.Biophysical Journal,2005,Vol.89(2):L14-L17
[101]陆坤权，刘寄星．软物质物理学导论．北京：北京大学出版社，2007，189-299
[102]Elena Martines,Kris Seunarine,Hywel Morgan,et al.Superhydrophobicity and Superhydrophilicity of Regular Nanopatterns.Nano Lett.,2005,Vol.5(10): 2097-2103
[103]Yang Zhao,Tao Tong,Lance Delzeit.Interfacial energy and strength of multiwalled-carbon-nanotube-based dry adhesive.J.Vac.Sci.Technol.B,2006,Vol.24(1): 331-335
[104]柯扬船．超微颗粒在固体中的分散技术的研究进展．化工进展，2003，Vol．22(8)：833-836
[105]J.D.MILLER,S.VEERAMASUNENI,J.DRELICH.Effect of Roughness as Determined by Atomic Force Microscopy on the Wetting Properties of PTFE Thin Films.POLYMER ENGINEERING AND SCIENCE,1996,Vol.36(14): 1849-1855
[106]Giovanni Alberti,Antonio DeSimone.Wetting of rough surfaces:a homogenization approach.Proc.Roy.Soc.London A,2005,Vol.461:79-97
[107]Junhyoung Kim,Ky-Youb Nam,Kwang-Hwi Cho,et al.Theoretical Study on Hydrophobicity of Amino Acids by the Solvation Free Energy Density Model.Bull.Korean Chem.Soc.,2003,Vol.24(12):1742-1750
[108]Alessandro Pozzato,Simone Dal Zilio,Giovanni Fois.Superhydrophobic surfaces fabricated by nanoimprint lithography.Microelectronic Engineering,2006,Vol.83(4-9): 884-888
[109]CHRIS MYATT NICK TRAGGIS.KATHRYN LI DESSAU.OPTICAL FABRICATION: Optical contacting grows more robust.Laser Focus World,2006,42(1):95-97
[110]L.Rayleigh.A study of glass surfaces in optical contact.Proc.Phys.Soc.A,1936,vol.156:326-349
[111]M.Shimbo,K.Furukawa,K.Fukuda,et al.Silicon-to-silicon direct bonding method.J Appl Phys,1986,Vol.60(8):2987-2989
[112]J.B.Lasky.Wafer bonding for silicon-on-insulator technologies.Appl.Phys.Lett.,1986,48: 78-80
[113]何国荣，陈松岩，谢生．Si-Si直接键合的研究及其应用．半导体光电，2003，Vo1．24(3)：149-153
[114]肖天龙，茅盘松，袁璟．用氧等离子体激活处理的低温硅片直接键合技术．半导体技术，1999，Vol．24(5)：19-22
[115]韩伟华，余金中，王启明．直接键合硅片界面键合能的理论分析．半导体学报，2001，Vol．22(2)：140-144
[116]何进，陈星弼，杨传仁．直接键合硅片的亲水处理及其表征．半导体技术，1999，Vo1．24(5)：23-25
[117]何进，陈星弼，王新．硅片直接键合的微观动力学研究．半导体技术，1999，Vol．24(6)：33-35
[118]童勤义．硅片键合制备SOI衬底．电子器件，1996，Vol．19(1)：1-8
[119]陈立国，孙立宁，黄庆安．硅片键合强度测试系统研究．测试技术学报，2005，Vo1．19(2)：137-140
[120]陈松岩，谢生，何国荣．Si／Si直接键合界面性质的研究．固体电子学研究与进展，2004，Vol．24(3)：390-395
[121]陈松岩，何国荣，谢生．Si／Si键合结构的电学性质测量及模拟．量子电子学报，2004，Vol．21(3)：381-386
[122]卢励吾，周洁，封松林．硅直接键合界面附近的深能级研究．物理学报，1994，Vol．43(5)：785-789
[123]R.Stengl,T.Tan,U.Gosele.A model for the silicon wafer bonding process.Japanese Journal of Applied Physics,1989,28(10):1735-1741
[124]Huang Qingan,Fu Xinghua,Chert Junning,et al.Requirement of silicon flatness for silicon direct bonding technology.Joumal of electronics.1994.Vol.11(4):355-360
[125]M．Elwenspoek，H．Jansen．硅微机械加工技术．姜岩峰译．北京：化学工业出版社，2006， 7
[126]Sami Franssila．微加工导论．陈迪等译．北京：电子工业出版社，2006，429
[127]陈星弼．功率MOSFET与高压集成电路．南京：东南大学出版社，1990
[128]J.Victory,C.McAndrew,R.Thoma.A 3D,physically based compact model for IC VDMOS transistors.Microelectronics,Proceedings.,1997 2 1st International Conference,1997,Vol.1:399-402
[129]Heinle U,Olsson J,Analysis of the Specific On-Resistance of Vertical High-Voltage DMOSFETs on SOI,IEEE Trans Electron Devices,2003,50(5): 1416
[130]Gan Z,Tan C M.Thermally induced stress in partial SOI structure during high temperature processing.Microelectronic Engineering,2004,71(2): 150-153
[131]Jungho James Pak,Bong-Soo Kim,Defect Analysis of a MELO-Si over SiO2 Strips of Different Widths and Spacings,Journal of the Korean Physical Society,2000,37(6): 980
[132]Dilhac J M,Zerrouk D,Ganibal C,Fabrication of SOI structures by uniform zone melting recrystallization for high voltage Ics,IEEE Proceeding of ISPSD.1996:215-218
[133]谭开洲．厚外延层上进行投影光刻的方法．中国，发明专利，2004-09，专利号：ZL200410083009．X，授权号：1296776
[134]陈德英，茅盘松．微机械加工中的图形硅片键合技术．固体电子学研究与进展，1999，Vol．19(3)：321-328
[135]马子文，汤自荣，廖广兰．晶片直接键合所需表面粗糙度条件．半导体学报，2007，Vol．28(3)：465-469
[136]R.Stengl,K.Mitani,V.Lehmann,et al.Silicon Wafer Bonding: Chemistry,Elastomechanics and Manufacturing,Proc.1989 IEEE SOS/SOI Technology Conf.,Stateline,Nevada,1989:123-124
[137]Jean Luc Leray,Philippe Paillet and Jean Luc Autran,An Overview of Buried Oxides on Silicon: New Processes and Radiation Effects J.Phys.Ⅲ France,1996,6:1625-1646
[138]谭开洲，冯建，刘勇，等．一种新型半绝缘键合SOI结构．半导体学报，2006，27(10)：1828-1831
[139]谭开洲．MOS器：件总剂量辐射加固技术研究：[工学硕士论文]．成都：电子科技大学，2001
[140]T P Ma,Paul V Dressendorfer.Ionizing Radiation Effects in MOS Devices and Circuits.New York: John Wiley & Sons,1989,87-255
[141]S M Sze.Physics of Semiconductor Devices.New York: John Wiley & Sons,1981,362-510
[142]D M Fleetwood,P V Dressemdorfer,D C Turpin.A Reevaluation of Worst-Case Post-irradiation Response for Hardened MOS Transistors.IEEE Trans.Nucl.Sci.,1987,Vol.34: 1178-1183
[143]N Stojadinovic,S Djoric Veljkovic,I Manic,et al.Effects of Elevated-Temperature bias stressing on Radiation Response in Power VDMOSFETs.IEEE Proceeding of 8th IPFA(Singapore),2001:243-248
[144]N Stojadinovic,S Djoric Veljkovic,I Manic,et al.Effects of Positive Gate Bias Stress on Radiation Response in Power VDMOSFETs.IEEE Proceeding of 23rd MIEL(YUGOSLAVIA),2002:723-726
[145]J R Schwank,W R Dawes.Irradiated Silicon Gate MOS Device Bias Annealing.IEEE Trans.Nucl.Sci.,1983,Vol.30:4100-4104
[146]A.Torres,O Flament,C Marcandella,et al.Spatial and Spectral Oxide Trap Distributions in Power MOSFETs,IEEE Trans.Nucl.Sci.,2000,NS-47(3): 269-273
[147]何宝平，龚建成，王桂珍，等．CMOS器件的等时、等温退火效应．半导体学报，2004，25(3)：302-306
[148]张廷庆，刘传洋，刘家璐，等．低温低剂量率下金属-氧化物-半导体器件的辐照效应．物理学报，2001，50(12)：2434-2438
[149]何宝平，姚育娟，彭宏论．环境温度、电离辐射剂量率对NMOSFET器件特性参数的影响．半导体学报，2001，22(6)：779-783
[150]崔帅，余学峰，任迪远，等．注F+NMOSFET的电离辐照与退火特性．核技术，2004，27(8)：586-589
[151]王剑屏，徐娜军，张廷庆，等．金属-氧化物-半导体器件γ辐照温度效应．物理学报，2000．Vo1．49：1331-1334
[152]P J McWhorter,P S Winokur,R A Pastorek.Donor/AcceptorNature of Radiation Induced Interface Traps.IEEE Trans.Nucl.Sci.1988,NS-35(6): 1154-1159
[153]S K Lai.Two Carrier Nature of Interface State Generation in Hole Trapping and Radiation Damage.Applied Physics Letters.1981,39(1):58-60
[154]T E Chang,C Huang,T Wang.Mechanisms of Interface Trap Induced Drain Leakage Current in OffState n-MOSFET's,IEEE Trans.Elect.Dev.1995,ED-42(4): 738-743
[155]P J McWhorter,P S Winokur.Simple Technique for Separating Effects of Interface Traps and Trapped Oxide Charge in Metal Oxide Semiconductor transistors.Appl Phy Lett,1986,48(2): 133-135
[156]Boualem Djezzar,Slimane Oussalah,Abderrazak Smatti.A New Oxide-Trap Based on Charge-Pumping Extraction Method for Irradiated MOSFET.IEEE Trans.Nucl.Sci.2004,NS-51(4),1724-1731
[157]D B Brown,W C Jenkins,A H Johnston.Application of a Model For Treatment of Time Dependent Effects on Irradiation of Microelectronic Devices.IEEE Trans.Nucl.Sci.1989.NS-36(6): 1954-1962
[158]A H Johnston,S B Roeske.Total Dose Effects at Low Dose Rate.IEEE Trans.Nucl.Sci.1986,NS-33(6): 1487-1492
[159]J R Schwank,P S Winokttr,P J MeWhorter,et al.Physical Mechanisms Contributing to Rebound.IEEE Trans.Nucl.Sei.1984,NS-31(6): 1434-1438
[160]J L Azarewicz.Dose Rate Effects on Total Dose Damage,IEEE Trans.Nucl.1986,Sci.NS-33(6): 1420-1424
[161]P Buchman.Total Dose Hardness Assurance for Microcircuits for Space Enviroment.IEEE Trans.Nuel.Sci.1986,NS-33(6): 1352-1358
[162]M C Peckerar,C M Dozier,D B Brown,et al.Radiation Effects Introduced by X-ray Lithography in MOS Devices.IEEE Trans.Nucl.Sci.1982,NS-29(6): 1697-1701
[163]刘勇，谭开洲，冯建，等．一种MEMS传感器悬梁结构的制造方法．中国，发明专利，2005-09，授权专利号：ZL 200510057273．0
[164]Y.C.Liang,Shuming Xu,Changhong Ren,et al.New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications.Industrial Electronics Society.26th Annual Conference of the IEEE,2000,Vol.2:1001-1006
[165]Bertrand,I.Pathirana,V.Imbernon,et al.New lateral DMOS and IGBT structures realized on a partial SOI substrate based on LEGO process,IEEE Bipolar/BiCMOS Circuits and Technology Meeting,2005:74-77
[2]M.Alexe,U.U.Gosele.Wafer bonding applications and technology.Heidelberg: Spinger,2004
[3]林成鲁．SOI-纳米技术时代的高端硅基材料．微电子学，2008，Vol．38(1)：44-49
[4]陈猛，王一波．SOI材料的发展历史、应用现状与发展新趋势(上)．中国集成电路，2007，Vol．98(7)：75-79
[5]陈猛，王一波．SOI材料的发展历史、应用现状与发展新趋势(下)．中国集成电路，2007， Vol．99(8)：44-．48
[6]J．P Colinge著．SOI技术2l世纪的硅集成电路技术，武国英等译．北京：科学出版社，1993，160-185
[7]Xiaorong Luo,Bo Zhang,Zhaoji Li,et al.A Novel 700-V SOI LDMOS With Double-Sided Trench.IEEE ELECTRON DEVICE LETTERS.2007,VOL.28(5):422-424
[8]A.Nakagawa,K.Watanabe,Y.Yamaguchi,et al.High voltage new driver IC technique based on silicon wafer direct-bonding(SDB).IEEE PESC 88 Rcord 19th Annual,1988,(2): 1325-1329
[9]T.Ohoka,T.Yoshitake.A wafer bonded SOI structure for intelligent power ICs.IEEE 5th International Symposium on Power Semiconductor Devices and ICs,1993:119～ 123
[10]FUJINO SEIJI,HIMI HIROAKI,FUKADA TSUYOSHI,et al.Device Applications Using Bonded SOI Wafers.DENSO Tech Rev,2005,10(2): 17-24
[11]F.Kawai,T.Onishi,T.Kamiya,et al.Multi-voltage SOI-BiCDMOS for 14V&42V automotive applications.IEEE Proe of ISPSD'04,2004:165-168
[12]T.Mizoguchi,T.Shirasawa,M.Mori,et al.600V 25A Dielectrically Isolated Power IC with Vertical IGBT.IEEE Proc of ISPSD' 1991,1991:40-44
[13]Naoto Fujishima,Akio Kitamura,Yoshihiko Nagayasu.High-Performance Lateral DMOSFET with Oxide Sidewall-Spacers.IEEE Proc of ISPSD'1994,1994:345-354
[14]Y.Sugawara,Y.Inoue,S.Ogawa,S.Kurita.NEW DIELECTRIC ISOLATION FOR HIGH VOLTAGE POWER ICs BY SINGLE SILICON POLY SILICON DIRECT BONDING(SPSDB) TECHNIQUE.IEEE Proc of ISPSD'1992,1992:316-321
[15]Ken-ya Kobayashi,Tomohiro Hamajima,Hiroaki Kikuchi.AN INTELLIGENT POWER DEVICE USING POLY-Si SANDWICHED WAFER BONDING TECHNIQUE.IEEE Proc ofISPSD'1995,1995:58-62
[16]E Arnold,S Merchant,M Amato,S Mukherjee,et al.COMPARISON OF JUNCTION-ISOLATED AND SOI HIGH-VOLTAGE DEVICES OPERATING IN THE SOURCE-FOLLOWER MODE.IEEE Proc of ISPSD'1992,1992:242-243
[17]T Aso,H Mizuide,H Kitaguchi,et al.A novel dielectric isolation process using molten SiGe.IEEE Proe oflSPSD'1993,1993:08-112
[18]Abe T,Katayama M,Shin-Etsu Hondotai,et al.Bonded SOl Technologies for High Voltage Applications.IEEE Proc of ISPSD'1996,1996:41-49
[19]G.S.Chung,S.Kawahito,M.Ishida,et al.High-Resolution Pressure Sensors Fabricated by Silicon Wafer Direct Bonding.Electronics Letters,1991,Vol.27(12): 1098-1099
[20]Ching-Fa Yeh,Shyang Hwang-Leu,Jui-I Tsai.The advanced improvement of PN mesa junction diode prepared by silicon-wafer direct bonding.IEEE International Symposium on VLSI Technology,Systems,and Applications,1991:136-140
[21]Yu Chen,Kavitha D.Buddharaju,et al.Superjunetion Power LDMOS on Partial SOI Platform.IEEE Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs,Jeju,Korea: 2007,177-180
[22]F Udrea,A Popescu,W Milne.Breakdown analysis in JI,SOI and partial SOI power structures.IEEE Proc Int SOI Conf,1997:102-103
[23]Ren Changhong,Cai Jun,Y.C.Liang,et al.The partial silicon-on-insulator technology for RF power LDMOSFET devices and on-chip microinductors.IEEE Trans Electron Divices,2002,49(12): 2271-2278
[24]H T Lira,F Udrea,W Milne,et al.Switching Speed Enhancement of the LDMOSFETs using Partial-SOI Technology.IEEE Proc.Intl.SOI Conf.1998:53-54
[25]Guangyu Huang,Cher Ming Tan,Zhenghao Gan,et al.Finite Element Modeling of Residual Mechanical Stress in Partial SOI Structure Due to Wafer Bonding Processing.Proceedings of 1 1th IPFA,2004:189-192
[26]Cheng Xinhong,Yang Wenwei,Song Zhaorui,et al.A Novel LDMOS Structure in Thin Film Patterned-SOI Technology with a Silicon Window Beneath P Well.Chinese Journal of Semiconductors,2004,Vol.25(12): 1581-1585
[27]N.Joachim,Burghartz,D.John,et al.Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics.IEEE ELECTRON DEVICE LETTERS,1992,Vol.13(8): 424-426
[28]K.Kobayashi,T.Hamajima,H.Kikuchi,et al.Application of partially bonded SOI structure to an intelligent power device having vertical DMOSFET.IEEE Proc of ISPSD'1997,1997: 309-312
[29]A Laporte,G Sarrabayrouse,L Lescouzeres,et al.Influence of the Mechanical Conditions on the Electrical and Structural Properties of the Interface between Directly Bonded Silicon Wafers.IEEE Proc.of the 6th Internat Symposium on Power Semiconductor Devices & IC's,Davos,Switzerland,1994,293-296
[30]李文钧，程新红，宋朝瑞，等．射频无线应用的体连接和图形化SOI LDMOSFET的比较．半导体学报，2006，Vol．27(13)：32-35
[31]程新红，宋朝瑞，俞跃辉，等．新型PSOI LDMOSFET的结构优化．半导体学报，2006，Vol．31(6)：444-447
[32]王小松，李泽宏，王一鸣．n埋层PSOI结构射频功率LDMOS的输出特性．半导体学报，2006，Vol．27(7)：1269-1273
[33]林羲，何平，田立林，等．采用局域注氧技术制备的新型DSOI场效应晶体管的热特性．半导体学报，2003，Vol．24(2)：1 17-121
[34]段宝兴，张波，李肇基．埋空隙PSOI结构的耐压分析．半导体学报，2005，Vol．26(9)：1818-1822
[35]段宝兴，张波，李肇基．双面阶梯埋氧 SOI结构的耐压分析．半导体学报，2006，Vol．27(5)：886-891
[36]罗小蓉，张波，李肇基，等．部分局域电荷槽SOI高压器件新结构．半导体学报，2006，Vol．27(1)：1 15-120
[37]罗小蓉，李肇基，张波，等．屏蔽槽SOI高压器件新结构和耐压机理．半导体学报，2005，Vol．26(11)：2154-2158
[38]段宝兴，张波，李肇基．具有P型埋层PSOI结构的耐压分析半导体学报，2005，Vol．26(11)：2149-2153
[39]段宝兴，张波，李肇基．高阻衬底上具有n+浮空层的横 Super Junction MOSFETs．半导体学报，2007，Vo1．28(2)：166-170
[40]罗小蓉，李肇基，张波．高散热变k介质埋层SOI高压功率器件．半导体学报，2006，Vol．27(10)：1832-1837
[41]罗小蓉，李肇基，张波．复合介质层SOI高压器件电场分布解析模型．半导体学报，2006，Vol．27(11)：2005-2010
[42]罗小蓉，李肇基，张波．可变低k介质层SOI LDMOS高压器件的耐压特性．半导体学报，2006，Vol．27(5)：88 1-885
[43]郭宇锋，李肇基，张波，等．具有非平面埋氧层的新型SOI材料的制备．半导体学报，2007，Vol．28(9)：141 5-1419
[44]解灵运．基于SOI的二维光子晶体平板波导的研究：[工学硕士学位论文]．北京：清华大学，2004
[45]唐衍哲．SOI材料上紧凑结构波导器件及阵列波导光栅器件的研制：[博士学位论文]．杭州：浙江大学，2004
[46]樊中朝，余金中，陈少武，等．ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响．半导体学报，2004，Vol．25(1 1)：1500-1504
[47]魏红振，余金中，张小峰．SOI及GeSi／Si脊形光波导的模式与波导几何结构．半导体学报，2001，Vol．21(5)：556-558
[48]陈媛媛，余金中，陈少武．SOI波导弯曲损耗改善方法的研究．红外与毫米波学报，2005，Vol．24(1)：53-55
[49]韩晓峰，吴亚明．一种基于SOI材料的直波导可调谐光衰减器．功能材料与器件学报，2004，Vo1．10(3)：355-358
[50]方青，李芳，刘育梁．基于SOI材料的阵列波导光栅的制作．红外与毫米波学报，2005，Vol．24(2)：143-146
[51]Rob Legtenberg,Harrie A.C.Tilmans,Job Elders,et al.Stiction of surface micromachined structures after rinsing and drying: model and investigation of adhesion mechanisms.Sensors and Actuators A,43,1994:230-238
[52]浙江大学普通化学教研组．普通化学．北京：高等教育出版社，1985
[53]唐永建，赵永宽，蒋伟阳，等．等温环境中激光惯性约束聚变冷冻靶丸内部液氢层分布．物理学报，1999，Vol．48(12)：2208-2214
[54]F.London.The General Theory of Molecular Forces.Trans.Faraday Soc.,1937,Vol.189(33): 8-26
[55]E.Yablonovitch,T.Sands,D.M.Hwang,et al.Van der Waals bonding of GaAs on Pd leads to a permanent,solid-phase-topotaxial,metallurgical bood.Appt.Phys.Lett.,1991,Vol.9(24): 3159-3161
[56]J.P.Bouanich.Site-site Lennard-Jones potential parameters for N2,O2,H2,CO and CO2.J.Quant.Spectrosc.Radiat.Transfer,1992,Vol.47(4): 243-250
[57]J.C.Slattery,E.S.Oh,Kaibin Fu “Extension of Continuum Mechanics to the nanoscale” Chemical Engineering Science,2004,Vol.59(21): 4621-4635
[58]Gholamreza Vakili-Nezhaad.Investigation of the Role of Coordination Number in the Lennard-Jones-Devonshire Theory.CROATICA CHEMICA ACTA(CCACAA),2007,Vol.80(2): 155-158
[59]Subir Bhattacharjee,Menachem Elimelech,Michal Borkovec.DLVO Interaction between Colloidal Particles: Beyond Derjaguin's Approximation.CROATICA CHEMICA ACTA,1998,Vol.71(4):883-903
[60]J.G.Dash,A.W.Rempel,J.S.Wettlaufer.The physics of premelted ice and its geophysical consequences.REVIEWS OF MODERN PHYSICS,2006,Vol.78(3):695-741
[61]V.N.Paunov,R.I.Dimova,P.A.Kralchevsky,et al.The Hydration Repulsion between Charged Surfaces as an Interplay of Volume Exclusion and Dielectric Saturation Effects.Journal of Colloid and Interface Science,1996,Vol.182(1):239-248
[62]M.A.Rodriguez-Valverde,M.A.Cabrerizo-Vilchez,A.Paez-Duenas.Stability of highly charged particles: bitumen-in-water dispersions.Colloids and Surface A: Physicochem Eng Aspects,2003,222:233-251
[63]Liguang Wang,Roe-Hoan Yoon.Hydrophobic Forces in the Foam Films Stabilized by Sodium Dodecyl Sulfate: Effect of Electrolyte.Langmuir.,2004,Vol.20(26): 11457-11464
[64]S.E.Truesdail,J.Lukasik,S.R.Farrah,et al.Analysis of Bacterial Deposition on Metal(Hydr)oxide-Coated Sand Filter Media.Journal of Colloid and Interface Science,1998,Vol.203(2):369-378.
[65]S.M.Oversteegen,H.N.W.Lekkerkerker.Testing the Derjaguin approximation for colloidal mixtures of spheres and disks.PHYSICAL REVIEW E 68,2003,021404:1-6
[66]S.Rentsch,R.Pericet-Camara,G.Papastavrou.Probing the validity of the Derjaguin approximation for heterogeneous colloidal particles.Physical Chemistry Chemical Physics,2006,Vol.8(21):2531-2538
[67]Samuel Rentsch,Ramon Pericet-Camara,Georg Papastavrou,et al.Probing the validity of the Derjaguin approximation for heterogeneous colloidal particles.Phys.Chem.Chem.Phys.,2006,8:2531-2538
[68]G.Palasantzas,G.Backx.Flnid interface fluctuations within the generalized Derjaguin approximation.PHYSICAL REVIEW B 56,1997,6878-6481
[69]B.Lesyng,G.A.Jeffrey,H.Maluszynska.A model for the hydrogen-bond-length probability distributions in the crystal structures of small-molecule components of the nucleic acids.Acta Crystallographica Section B Structural Science.,1988,Vol.44:193-198
[70]Young Kee Kang.Which Functional Form Is Appropriate for Hydrogen Bond of Amides.?.J.Phys.Chem.B,2000,Vo1.104(34):8321-8326
[71]P.J.van Zwol,G.Palasantzas,J.Th.M.De Hosson.Influence of random roughness on the adhesion between metal surfaces due to capillary condensation.APPLIED PHYSICS LETTERS,2007,Vol.91(10),101905:1-3
[72]R.N.Wenzel.Surface Roughness and Contact Angle.J Phys.Colloid Chem.,1949,Vol.53: 1466-1467
[73]赵宁，卢晓英，张晓艳，等．超疏水表面的研究进展．化学进展，2007，Vol．19(6)：860-871
[74]Mingyan He,Amy Szuchmacher Blum,D.Erie Aston,et al.Critical phenomena of water bridges in nanoasperity contacts.JOURNAL OF CHEMICAL PHYSICS,2001,Vol.114(3): 1355-1360
[75]CAREL J.VAN OSS,MANOJ K.CHAUDHURY,ROBERT J.GOOD.Interfacial Lifshitz-van der Waals and Polar Interactions in Macroscopic Systems,Chemical Reviews,1988,Vol.88(6):927-941
[76]Lennart Bergstrom.Hamaker constants of inorganic materials.Advancesin Colloid and Interface Science.1997,70(1): 125-169
[77]M.D.Morariu,E.Schaffer,U.Steiner.Molecular Forces Caused by the Confinement of Thermal Noise.Physical Review Letters,2004,Vol.92(15),156102:1-4
[78]M.D.Morariu,E.Schaffer,U.Steiner.Capillary instabilities by fluctuation induced forces.The European Physical Journal E 12,2003:375-381
[79]Oded Kenneth,Israel Klich.Opposites Attract:A Theorem about the Casimir Force.Physical Review Letters,2006,Vol.97(16),160401:1-4
[80]J.N.Munday,Federico Capasso.Precision measurement of the Casimir-Lifshitz force in a fluid.Physical Review.A,2007,Vol.75(6),060102(R): 1-4
[81]R.H.French,R.M.Cannon,L.K.DeNoyer,et al.Full Spectral Calculation of Non-Retarded Hamaker Constants for Ceramic Systems from Interband Transition Strengths.Solid State Ionics,1995,Vol.75:13-33
[82]G.Palasantzas.Self-affine roughness influence on the Casimir effect.Journal of Applied Physics,2005,Vol.97(12),126104:1-3
[83]Sung Nae Cho.Casimir Force in Non-Planar Geometric Configurations:[Doctor of Philosophy in Physics].Virginia: Virginia Polytechnic Institute and State University,2004
[84]谢处方，饶克谨．电磁场与电磁波．北京：高等教育出版社，1987，94
[85]B.V.Derjaguin,Y.I.Rabinovich,N.V.Churaev.Direct measurement of molecular forces.Nature,1978,Voi.272:313-318
[86]H.D.Ackler,R.H.French,Y.M.Chiang.Comparison of Hamakcr Constants for Ceramic Systems with Interrvening Vacuum or Water:.From Force Laws and Physical Properties.Journal of Colloid and Interface Science,1996,Vol.179:460-469
[87]T.J.Senden and C.J.Drummond.Surface Chemistry and Tip-Sample Interactions in Atomic Force Microscopy.Colloids Surf.A,1995,Vol.94:29-51
[88]Hongming Li.IMPACT OF COHESION FORCES ON PARTICLE MIXING AND SEGREGATION :[Doctor of Philosophy].Pittsburgh: Univcrsity of Pittsburgh,2005
[89]A.D.BUCKINGHAM,B.D.UTTING.INTERMOLECULAR FORCES.Annu.Rev.Phys.Chem.,1970,21:287-316
[90]Laurent Pizzagalli,Alexis Baratoff.Theory of single atom manipulation with a scanning probe tip:Force signatures,constant-height,and constant-force scans.PHYSICAL REVIEW B 68,2003,115427:1-12
[91]W.Xu,B.L.Blackford,J.G.Cordes.Atomic Force Microscope Measurements of Long-Range Forces Near Lipid-Coated Surfaces in Electrolytes.Biophysical Journal,1997,Vol.72(3): 1404-1413
[92]E.A.Olson,M.Yu.Efremov,M.Zhang.Size-dependent melting ofBi nanoparticles.J.Appl.Phys.Vol.97,2005,034304:1-9
[93]Robert H.French.Origins and applications of London dispersion forces and Hamaker constants in ceramics.Journal of the American Ceramic Society,2000,Vol.83(9):2117-2146
[94]C.Argento,R.H.French.Parametric tip model and force-distance relation for Hamakcr constant determination from atomic force microscopy.J.Appl.Phys.,1996,Vol.80(11): 6081-6090
[95]Igor Sokolov,Quy K.Ong,Hasan Shodiev,et al.AFM study of forces between silica,silicon nitride and polyurethane pads.Journal of Colloid and Interface Science,2006,Vol.300(2): 475-481
[96]Emanuel Bertrand,Harvey Dobbs,Daniel Broseta,et al.First-Order and Critical Wetting of Alkanes on Water.PHYSICAL REVIEW LETTERS.2000,Vol 85(6): 1282-1285
[97]P.Weronski,J.Y.Walz,M.Elimelech.Effect of depletion interactions on transport of colloidal particles in porous media.Journal of Colloid and Interface Science,2003,Vol.262: 372-383
[98]M.Sferrazza,M.Heppenstall-Butler,R.Cubitt,et al.Interfacial Instability Driven by Dispersive Forces: The Early Stages of Spinodal Dewetting of a Thin Polymer Film on a Polymer Substrate.Physical Review Letters,1998,Vol.81(23):5173-5176
[99]C.D.Dushkin,P.A.Kralchevsky,V.N.Paunov,et al.Torsion Balance for Measurement of Capillary Immersion Forces.Langmuir.,1996,Vol.12(3):641-651
[100]W.Sun,P.Neuzil,T.S.Kustandi,et al.The nature of the gecko lizard adhesive force.Biophysical Journal,2005,Vol.89(2):L14-L17
[101]陆坤权，刘寄星．软物质物理学导论．北京：北京大学出版社，2007，189-299
[102]Elena Martines,Kris Seunarine,Hywel Morgan,et al.Superhydrophobicity and Superhydrophilicity of Regular Nanopatterns.Nano Lett.,2005,Vol.5(10): 2097-2103
[103]Yang Zhao,Tao Tong,Lance Delzeit.Interfacial energy and strength of multiwalled-carbon-nanotube-based dry adhesive.J.Vac.Sci.Technol.B,2006,Vol.24(1): 331-335
[104]柯扬船．超微颗粒在固体中的分散技术的研究进展．化工进展，2003，Vol．22(8)：833-836
[105]J.D.MILLER,S.VEERAMASUNENI,J.DRELICH.Effect of Roughness as Determined by Atomic Force Microscopy on the Wetting Properties of PTFE Thin Films.POLYMER ENGINEERING AND SCIENCE,1996,Vol.36(14): 1849-1855
[106]Giovanni Alberti,Antonio DeSimone.Wetting of rough surfaces:a homogenization approach.Proc.Roy.Soc.London A,2005,Vol.461:79-97
[107]Junhyoung Kim,Ky-Youb Nam,Kwang-Hwi Cho,et al.Theoretical Study on Hydrophobicity of Amino Acids by the Solvation Free Energy Density Model.Bull.Korean Chem.Soc.,2003,Vol.24(12):1742-1750
[108]Alessandro Pozzato,Simone Dal Zilio,Giovanni Fois.Superhydrophobic surfaces fabricated by nanoimprint lithography.Microelectronic Engineering,2006,Vol.83(4-9): 884-888
[109]CHRIS MYATT NICK TRAGGIS.KATHRYN LI DESSAU.OPTICAL FABRICATION: Optical contacting grows more robust.Laser Focus World,2006,42(1):95-97
[110]L.Rayleigh.A study of glass surfaces in optical contact.Proc.Phys.Soc.A,1936,vol.156:326-349
[111]M.Shimbo,K.Furukawa,K.Fukuda,et al.Silicon-to-silicon direct bonding method.J Appl Phys,1986,Vol.60(8):2987-2989
[112]J.B.Lasky.Wafer bonding for silicon-on-insulator technologies.Appl.Phys.Lett.,1986,48: 78-80
[113]何国荣，陈松岩，谢生．Si-Si直接键合的研究及其应用．半导体光电，2003，Vo1．24(3)：149-153
[114]肖天龙，茅盘松，袁璟．用氧等离子体激活处理的低温硅片直接键合技术．半导体技术，1999，Vol．24(5)：19-22
[115]韩伟华，余金中，王启明．直接键合硅片界面键合能的理论分析．半导体学报，2001，Vol．22(2)：140-144
[116]何进，陈星弼，杨传仁．直接键合硅片的亲水处理及其表征．半导体技术，1999，Vo1．24(5)：23-25
[117]何进，陈星弼，王新．硅片直接键合的微观动力学研究．半导体技术，1999，Vol．24(6)：33-35
[118]童勤义．硅片键合制备SOI衬底．电子器件，1996，Vol．19(1)：1-8
[119]陈立国，孙立宁，黄庆安．硅片键合强度测试系统研究．测试技术学报，2005，Vo1．19(2)：137-140
[120]陈松岩，谢生，何国荣．Si／Si直接键合界面性质的研究．固体电子学研究与进展，2004，Vol．24(3)：390-395
[121]陈松岩，何国荣，谢生．Si／Si键合结构的电学性质测量及模拟．量子电子学报，2004，Vol．21(3)：381-386
[122]卢励吾，周洁，封松林．硅直接键合界面附近的深能级研究．物理学报，1994，Vol．43(5)：785-789
[123]R.Stengl,T.Tan,U.Gosele.A model for the silicon wafer bonding process.Japanese Journal of Applied Physics,1989,28(10):1735-1741
[124]Huang Qingan,Fu Xinghua,Chert Junning,et al.Requirement of silicon flatness for silicon direct bonding technology.Joumal of electronics.1994.Vol.11(4):355-360
[125]M．Elwenspoek，H．Jansen．硅微机械加工技术．姜岩峰译．北京：化学工业出版社，2006， 7
[126]Sami Franssila．微加工导论．陈迪等译．北京：电子工业出版社，2006，429
[127]陈星弼．功率MOSFET与高压集成电路．南京：东南大学出版社，1990
[128]J.Victory,C.McAndrew,R.Thoma.A 3D,physically based compact model for IC VDMOS transistors.Microelectronics,Proceedings.,1997 2 1st International Conference,1997,Vol.1:399-402
[129]Heinle U,Olsson J,Analysis of the Specific On-Resistance of Vertical High-Voltage DMOSFETs on SOI,IEEE Trans Electron Devices,2003,50(5): 1416
[130]Gan Z,Tan C M.Thermally induced stress in partial SOI structure during high temperature processing.Microelectronic Engineering,2004,71(2): 150-153
[131]Jungho James Pak,Bong-Soo Kim,Defect Analysis of a MELO-Si over SiO2 Strips of Different Widths and Spacings,Journal of the Korean Physical Society,2000,37(6): 980
[132]Dilhac J M,Zerrouk D,Ganibal C,Fabrication of SOI structures by uniform zone melting recrystallization for high voltage Ics,IEEE Proceeding of ISPSD.1996:215-218
[133]谭开洲．厚外延层上进行投影光刻的方法．中国，发明专利，2004-09，专利号：ZL200410083009．X，授权号：1296776
[134]陈德英，茅盘松．微机械加工中的图形硅片键合技术．固体电子学研究与进展，1999，Vol．19(3)：321-328
[135]马子文，汤自荣，廖广兰．晶片直接键合所需表面粗糙度条件．半导体学报，2007，Vol．28(3)：465-469
[136]R.Stengl,K.Mitani,V.Lehmann,et al.Silicon Wafer Bonding: Chemistry,Elastomechanics and Manufacturing,Proc.1989 IEEE SOS/SOI Technology Conf.,Stateline,Nevada,1989:123-124
[137]Jean Luc Leray,Philippe Paillet and Jean Luc Autran,An Overview of Buried Oxides on Silicon: New Processes and Radiation Effects J.Phys.Ⅲ France,1996,6:1625-1646
[138]谭开洲，冯建，刘勇，等．一种新型半绝缘键合SOI结构．半导体学报，2006，27(10)：1828-1831
[139]谭开洲．MOS器：件总剂量辐射加固技术研究：[工学硕士论文]．成都：电子科技大学，2001
[140]T P Ma,Paul V Dressendorfer.Ionizing Radiation Effects in MOS Devices and Circuits.New York: John Wiley & Sons,1989,87-255
[141]S M Sze.Physics of Semiconductor Devices.New York: John Wiley & Sons,1981,362-510
[142]D M Fleetwood,P V Dressemdorfer,D C Turpin.A Reevaluation of Worst-Case Post-irradiation Response for Hardened MOS Transistors.IEEE Trans.Nucl.Sci.,1987,Vol.34: 1178-1183
[143]N Stojadinovic,S Djoric Veljkovic,I Manic,et al.Effects of Elevated-Temperature bias stressing on Radiation Response in Power VDMOSFETs.IEEE Proceeding of 8th IPFA(Singapore),2001:243-248
[144]N Stojadinovic,S Djoric Veljkovic,I Manic,et al.Effects of Positive Gate Bias Stress on Radiation Response in Power VDMOSFETs.IEEE Proceeding of 23rd MIEL(YUGOSLAVIA),2002:723-726
[145]J R Schwank,W R Dawes.Irradiated Silicon Gate MOS Device Bias Annealing.IEEE Trans.Nucl.Sci.,1983,Vol.30:4100-4104
[146]A.Torres,O Flament,C Marcandella,et al.Spatial and Spectral Oxide Trap Distributions in Power MOSFETs,IEEE Trans.Nucl.Sci.,2000,NS-47(3): 269-273
[147]何宝平，龚建成，王桂珍，等．CMOS器件的等时、等温退火效应．半导体学报，2004，25(3)：302-306
[148]张廷庆，刘传洋，刘家璐，等．低温低剂量率下金属-氧化物-半导体器件的辐照效应．物理学报，2001，50(12)：2434-2438
[149]何宝平，姚育娟，彭宏论．环境温度、电离辐射剂量率对NMOSFET器件特性参数的影响．半导体学报，2001，22(6)：779-783
[150]崔帅，余学峰，任迪远，等．注F+NMOSFET的电离辐照与退火特性．核技术，2004，27(8)：586-589
[151]王剑屏，徐娜军，张廷庆，等．金属-氧化物-半导体器件γ辐照温度效应．物理学报，2000．Vo1．49：1331-1334
[152]P J McWhorter,P S Winokur,R A Pastorek.Donor/AcceptorNature of Radiation Induced Interface Traps.IEEE Trans.Nucl.Sci.1988,NS-35(6): 1154-1159
[153]S K Lai.Two Carrier Nature of Interface State Generation in Hole Trapping and Radiation Damage.Applied Physics Letters.1981,39(1):58-60
[154]T E Chang,C Huang,T Wang.Mechanisms of Interface Trap Induced Drain Leakage Current in OffState n-MOSFET's,IEEE Trans.Elect.Dev.1995,ED-42(4): 738-743
[155]P J McWhorter,P S Winokur.Simple Technique for Separating Effects of Interface Traps and Trapped Oxide Charge in Metal Oxide Semiconductor transistors.Appl Phy Lett,1986,48(2): 133-135
[156]Boualem Djezzar,Slimane Oussalah,Abderrazak Smatti.A New Oxide-Trap Based on Charge-Pumping Extraction Method for Irradiated MOSFET.IEEE Trans.Nucl.Sci.2004,NS-51(4),1724-1731
[157]D B Brown,W C Jenkins,A H Johnston.Application of a Model For Treatment of Time Dependent Effects on Irradiation of Microelectronic Devices.IEEE Trans.Nucl.Sci.1989.NS-36(6): 1954-1962
[158]A H Johnston,S B Roeske.Total Dose Effects at Low Dose Rate.IEEE Trans.Nucl.Sci.1986,NS-33(6): 1487-1492
[159]J R Schwank,P S Winokttr,P J MeWhorter,et al.Physical Mechanisms Contributing to Rebound.IEEE Trans.Nucl.Sei.1984,NS-31(6): 1434-1438
[160]J L Azarewicz.Dose Rate Effects on Total Dose Damage,IEEE Trans.Nucl.1986,Sci.NS-33(6): 1420-1424
[161]P Buchman.Total Dose Hardness Assurance for Microcircuits for Space Enviroment.IEEE Trans.Nuel.Sci.1986,NS-33(6): 1352-1358
[162]M C Peckerar,C M Dozier,D B Brown,et al.Radiation Effects Introduced by X-ray Lithography in MOS Devices.IEEE Trans.Nucl.Sci.1982,NS-29(6): 1697-1701
[163]刘勇，谭开洲，冯建，等．一种MEMS传感器悬梁结构的制造方法．中国，发明专利，2005-09，授权专利号：ZL 200510057273．0
[164]Y.C.Liang,Shuming Xu,Changhong Ren,et al.New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications.Industrial Electronics Society.26th Annual Conference of the IEEE,2000,Vol.2:1001-1006
[165]Bertrand,I.Pathirana,V.Imbernon,et al.New lateral DMOS and IGBT structures realized on a partial SOI substrate based on LEGO process,IEEE Bipolar/BiCMOS Circuits and Technology Meeting,2005:74-77