DC-DC二次电源辐射特性研究
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摘要
随着空间技术的不断发展,研究半导体器件与电路的辐射效应,提高其抗辐射水平已经是近年来国内外微电子学领域十分重视的课题。而DC-DC转换器作为电子设备的核心部分,其性能受辐射影响情况直接关系到整个系统的稳定性,因而研究它在受辐射影响后电性能变化情况,提高其抗辐射水平具有极其重要的意义。
本文所做工作为研究DC-DC转换器电路的辐射性能,仿真分析各电路模块受影响后基本电性能的变化情况,针对实际电路提出改进方案以提高电路在受辐射影响后性能的稳定性。首先在分析基本Boost型DC-DC工作原理及详细工作过程基础上,根据实际电路指标要求,建立了从6V到15V的升压电路,并在Pspice中进行模拟仿真。分析了辐射对半导体材料及双极型和MOS型器件产生的影响,对主要变化量MOS器件的阈值电压、双极型器件的晶体管放大倍数进行了定量分析。根据主因素近似分析方法,对基准电压源电路、误差放大器电路的辐射后性能进行了分析,发现误差放大器电路性能参数会随着辐射量变化不断的发生变化,文中给出了开环放大倍数及输入失调电压的数值分析;而基准电压源电路变化趋势与之不同,在低剂量时,受影响很小,输出电压基本不变,当总剂量超过90krad以上时,输出电压开始有很明显的增长趋势。在分析主开关管受辐射后性能变化基础上,分析了辐射引起基本升压电路性能的主要变化情况,发现电路在总剂量约45krad以上时输出电压开始降低,输入电流开始急剧增加,引起晶体管功耗不断增长,不利于晶体管及电路的稳定。针对引起此变化的主要原因,采用增加辅助电路的方法来降低阈值电压变化对电路的影响,使得受辐射影响后电流增长值减少了一半,降低了电路3/4的功耗、提高了整个电路的稳定性能。同时,由于低压差线性稳压器电路的独特性,本文在建立MSK5275-5.0H基本电路基础上,对其辐射性能进行了分析。
Recently years, with the development of technology, the subject of studying the effects of ionizing radiation for semiconductor devices and integrated circuits, and how to improve their anti-radiation property become increasingly important in micro-electronics field. While DC-DC converter is the core part of equipment, and its property determined stability of the whole system. Therefore, it is significant to research the radiation property of DC-DC converter, and improve its anti-radiation level.
This paper discusses the radiation property of DC-DC converter, simulating the change of electrical property of several circuits. A method is proposed to maintain the stability of circuit under radiation environment. Based on the previous theory and research on detailed process of Boost DC-DC converter, a new circuit is designed as required, the simulation is carried out in Pspice with 6V input and 15V output. Analyze the basic radiation effects in semiconductor materials; give a detailed analysis of the main influenceβin BJT and threshold voltage in MOS devices. Then the method of first-order approximation is employed to analyze the circuits and research on the change of electrical property before and after radiation, including operational amplifier, reference voltage source. The parameter of operational amplifier is varied when the dose of radiation changed, a detailed analyzes of open loop gain and input offset voltage is given in this paper. The change of reference voltage after radiation is different from it, under low dose of radiation, there is nearly no influence, when the total dose is bigger than 90krad, there is a significant increase of output voltage. Research the property of the basic topology under radiation. When the total dose is bigger than 45krad, there is a decrease in output voltage and an increase in input current. The useless power of transistor is increasing rapid, which is not good for the transistor and circuit’s stability. A method using an auxiliary circuit is proposed to compensate the change of threshold voltage after analyzing the main factor to reduce power consumption and improve circuit’s stability. The improved circuit reduces 3/4 power by the current as a half of the origin circuit, improve the circuit’s radiation property. Due to low dropout linear voltage circuit’s uniqueness, analysis of its radiation property is performed in this paper after a circuit is designed to reach the property of MSK5275-5.0H.
本文所做工作为研究DC-DC转换器电路的辐射性能,仿真分析各电路模块受影响后基本电性能的变化情况,针对实际电路提出改进方案以提高电路在受辐射影响后性能的稳定性。首先在分析基本Boost型DC-DC工作原理及详细工作过程基础上,根据实际电路指标要求,建立了从6V到15V的升压电路,并在Pspice中进行模拟仿真。分析了辐射对半导体材料及双极型和MOS型器件产生的影响,对主要变化量MOS器件的阈值电压、双极型器件的晶体管放大倍数进行了定量分析。根据主因素近似分析方法,对基准电压源电路、误差放大器电路的辐射后性能进行了分析,发现误差放大器电路性能参数会随着辐射量变化不断的发生变化,文中给出了开环放大倍数及输入失调电压的数值分析;而基准电压源电路变化趋势与之不同,在低剂量时,受影响很小,输出电压基本不变,当总剂量超过90krad以上时,输出电压开始有很明显的增长趋势。在分析主开关管受辐射后性能变化基础上,分析了辐射引起基本升压电路性能的主要变化情况,发现电路在总剂量约45krad以上时输出电压开始降低,输入电流开始急剧增加,引起晶体管功耗不断增长,不利于晶体管及电路的稳定。针对引起此变化的主要原因,采用增加辅助电路的方法来降低阈值电压变化对电路的影响,使得受辐射影响后电流增长值减少了一半,降低了电路3/4的功耗、提高了整个电路的稳定性能。同时,由于低压差线性稳压器电路的独特性,本文在建立MSK5275-5.0H基本电路基础上,对其辐射性能进行了分析。
Recently years, with the development of technology, the subject of studying the effects of ionizing radiation for semiconductor devices and integrated circuits, and how to improve their anti-radiation property become increasingly important in micro-electronics field. While DC-DC converter is the core part of equipment, and its property determined stability of the whole system. Therefore, it is significant to research the radiation property of DC-DC converter, and improve its anti-radiation level.
This paper discusses the radiation property of DC-DC converter, simulating the change of electrical property of several circuits. A method is proposed to maintain the stability of circuit under radiation environment. Based on the previous theory and research on detailed process of Boost DC-DC converter, a new circuit is designed as required, the simulation is carried out in Pspice with 6V input and 15V output. Analyze the basic radiation effects in semiconductor materials; give a detailed analysis of the main influenceβin BJT and threshold voltage in MOS devices. Then the method of first-order approximation is employed to analyze the circuits and research on the change of electrical property before and after radiation, including operational amplifier, reference voltage source. The parameter of operational amplifier is varied when the dose of radiation changed, a detailed analyzes of open loop gain and input offset voltage is given in this paper. The change of reference voltage after radiation is different from it, under low dose of radiation, there is nearly no influence, when the total dose is bigger than 90krad, there is a significant increase of output voltage. Research the property of the basic topology under radiation. When the total dose is bigger than 45krad, there is a decrease in output voltage and an increase in input current. The useless power of transistor is increasing rapid, which is not good for the transistor and circuit’s stability. A method using an auxiliary circuit is proposed to compensate the change of threshold voltage after analyzing the main factor to reduce power consumption and improve circuit’s stability. The improved circuit reduces 3/4 power by the current as a half of the origin circuit, improve the circuit’s radiation property. Due to low dropout linear voltage circuit’s uniqueness, analysis of its radiation property is performed in this paper after a circuit is designed to reach the property of MSK5275-5.0H.
引文
[1]J.Gasiot. Radiation effects on devices: Total Ionizing Dose, displacement effect, single evernt effect. University de Montpellier II, France: Cern Training, 2003.
[2]Tiva Bussarakons, Military Satellite Pose Engineering Chanllenges in DC/DC Converter Development/Defense Electronics. http://www.rfdesign.com, May 2004.
[3]叶慧贞开关稳压电源北京:国防工业出版社1990
[4]叶治政,叶靖国开关稳压电源北京:高等教育出版杜,1989
[5]张占松,蔡宣三开关电源的原理与设计北京:电子工业出版杜,1999
[6]Barth J L, Dyer C S, Stassinopoulos E G, Space, Atmospheric, and Terrestrial Radiation Environments.IEEE Transactions on Nuclear Science, 2003, 50(3):466-482.
[7]乔登江,核爆炸物理概论,原子能出版社,1988
[8]曹建中半导体材料的辐射效应北京:科学出版社.1993.
[9]Ronald C. Lacoe, Jon V. Osborn, Rocky Koga, S. Brown, D. C. Mayer, Application of hardness-by-design methodology to radiation-tolerant ASIC technologies, IEEE Trans. Nuclear Science, Vol. 47, No. 6, Dec., 2000:2334-2341.
[10]陈盘训半导体器件和集成电路的辐射效应北京:国防工业出版社
[11]杨旭、裴云庆,开关电源技术,机械工业出版社,2004
[12]王创社乐开端谭玉山开关电源两种控制模式的分析与比较电力电子技术1998年第3期1998. 8
[13]Holland B. Modeling, Analysis and Compensation of the Current Mode Converter Proceedings of Powercon1984,11 : 122.
[14]王志正黄志武,DC-DC变流器电流型控制的原理与实现机车电传动2002年第2期
[15]宋钦岐MOS器件的电离辐照效应,MOS器件电离辐照效应文集,航空航天工业部科学技术公司,1992
[16] T. P. Ma, P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits, New York Wiley, 1989
[17] Devine R A B, The structure if Si02 its defects and radiation hardness, IEEE Transactions on Nuclear Science 1994, Vol.41, No.6, p452.
[18]皇甫丽英,金平,勾秋静等MOS场效应晶体管辐照特性的实验研究实验技术与管理Vo1.23,No.3, MAR.2006
[19]李冬梅,王志华,皇甫丽英等NMOS晶体管高剂量率下总剂量辐照特性研究电子器件第30卷第3期2007年6月
[20] R.D. Schrimpf, Gain degradation and enhanced low-dose-rate sensitivity in bipolar junction transistors, Int. J. High Speed Electron. Syst,Vol.14, pp.503–517, 2004.
[21]任迪远、陆妩等双极器件和电路的不同剂量率的辐射效应研究固体电子学研究与进展V01.26,No.4 NOV 2006
[22]Witczak S C,Schrimpf R D,Fleetwood D M,et a1. Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures[J] . IEEE Transactions on Nuclear Science 1997,44(6):1989
[23]张华林,陆妩等不同剂量率下偏置对双极晶体管电离辐照效应的影响微电子学第34卷第6期2004年12月
[24]赖祖武,抗辐射电子学-辐射效应及加固原理,国防工业出版社,1998
[25] Rebecca Lynne Baczuk, Sherif Michael, Pspice simulation of total dose effects on composite and single operational amplifiers. September 1994.
[26]童诗白华成英模拟电子技术基础高等教育出版社2001年1月第三版
[27]朱正涌等半导体集成电路清华大学出版社2002
[28] P. C. Adell, R. D. Schrimpf, W. T. Holman, Total Dose Effects in a Linear Voltage Regulator, IEEE Transactions on Nuclear Science VOL. 51, NO. 6, DECEMBER 2004.
[29]Gabriel A, Ricon More, Voltage References from Diodes to Precision High-Order Bandgap Circuits. New York: IEEE Press, 2002:4-16
[30]拉扎维?毕查德模拟CMOS集成电路设计.陈贵灿译西安:西安交通大学出版社. 2003.
[31]H. C. Nauta, E.H. Nordholt, A new class of high performance PTAT current sources, Electron. Lett, VOL.21, 1985: 384-386.
[32]何玉娟,恩云飞,罗宏伟等DC-DC电源模块X射线总剂量辐射效应研究第十五届全国半导体集成电路、硅材料学术会议论文集pp.425-428
[33]I. E. Pizano, T. H. Ma, 1. 0. Attia, R. D. Schrimpf, K. F. Galloway, and A. F. Witulski, Total dose effects on power-MOSFET switching converters Microelectronic Reliability, vol. 38, pp. 1935-1939, 1998.
[34] P. C. Adell, R. D. Schrimpf, B. K. Choi, W. T. Holman, J. P. Attwood, C. R. Cirba, and K. F. Galloway,“Total-dose and single-event effects in switching DC/DC power converters,”IEEE Transactions on Nuclear Science vol. 49, pp. 3217–3221, Dec. 2002.
[35]Chao-Cheng Chen, Sow-Chang tiu, Cheng-Cheng Hsiao, and Jenn-Gwo Hwu, A circuit design for the improvement of radiation hardness in CMOS digital circuits,IEEE Transactions on Nuclear Science vol. 39, No. 2,272, April 1992.
[36]Huadian Pan, Herbert L. Hess, Kevin M. Buck, Method to Improve Total Dose Radiation Hardness in a CMOS dc-dc Boost Converter IEEE 2005 pp.1491-1495
[37] G.A.Rincon-Mora. Current Efficient, Low Voltage, Low Drop-Out Regulators. Ph.D Thesis, Georgia Institute of Technology. Nov, 1996
[38] Very high current, low dropout surface mount voltage regulators.MSK5275 series datasheet, M.S.KENNEDY COMP.
[39]V. Ramachandran, B. Narasimham, Modeling Total-Dose Effects for a Low-Drop -out Voltage Regulator, IEEE Transactions on Nuclear Science,Vol.53 , pp.3223-3231, No. 6, Dec.2006.
[40]Andrew T. Kelly, Philippe C. Adell, Arthur F. Witulski, Total Dose and Single Event Transients in Linear Voltage Regulators IEEE Transactions on Nuclear Science, Vol.54, No. 4, August 2007.
[41]A. H. Johnston S. M. Guertin, The effects of space radiation on linear integrated circuits, in Proc. IEEE Aerospace Conf., 2000, vol. 5, pp.363–369.
[42]National Semiconductor Corporation, Linear Regulators Theory of Operational and Compensation, 2002
[2]Tiva Bussarakons, Military Satellite Pose Engineering Chanllenges in DC/DC Converter Development/Defense Electronics. http://www.rfdesign.com, May 2004.
[3]叶慧贞开关稳压电源北京:国防工业出版社1990
[4]叶治政,叶靖国开关稳压电源北京:高等教育出版杜,1989
[5]张占松,蔡宣三开关电源的原理与设计北京:电子工业出版杜,1999
[6]Barth J L, Dyer C S, Stassinopoulos E G, Space, Atmospheric, and Terrestrial Radiation Environments.IEEE Transactions on Nuclear Science, 2003, 50(3):466-482.
[7]乔登江,核爆炸物理概论,原子能出版社,1988
[8]曹建中半导体材料的辐射效应北京:科学出版社.1993.
[9]Ronald C. Lacoe, Jon V. Osborn, Rocky Koga, S. Brown, D. C. Mayer, Application of hardness-by-design methodology to radiation-tolerant ASIC technologies, IEEE Trans. Nuclear Science, Vol. 47, No. 6, Dec., 2000:2334-2341.
[10]陈盘训半导体器件和集成电路的辐射效应北京:国防工业出版社
[11]杨旭、裴云庆,开关电源技术,机械工业出版社,2004
[12]王创社乐开端谭玉山开关电源两种控制模式的分析与比较电力电子技术1998年第3期1998. 8
[13]Holland B. Modeling, Analysis and Compensation of the Current Mode Converter Proceedings of Powercon1984,11 : 122.
[14]王志正黄志武,DC-DC变流器电流型控制的原理与实现机车电传动2002年第2期
[15]宋钦岐MOS器件的电离辐照效应,MOS器件电离辐照效应文集,航空航天工业部科学技术公司,1992
[16] T. P. Ma, P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits, New York Wiley, 1989
[17] Devine R A B, The structure if Si02 its defects and radiation hardness, IEEE Transactions on Nuclear Science 1994, Vol.41, No.6, p452.
[18]皇甫丽英,金平,勾秋静等MOS场效应晶体管辐照特性的实验研究实验技术与管理Vo1.23,No.3, MAR.2006
[19]李冬梅,王志华,皇甫丽英等NMOS晶体管高剂量率下总剂量辐照特性研究电子器件第30卷第3期2007年6月
[20] R.D. Schrimpf, Gain degradation and enhanced low-dose-rate sensitivity in bipolar junction transistors, Int. J. High Speed Electron. Syst,Vol.14, pp.503–517, 2004.
[21]任迪远、陆妩等双极器件和电路的不同剂量率的辐射效应研究固体电子学研究与进展V01.26,No.4 NOV 2006
[22]Witczak S C,Schrimpf R D,Fleetwood D M,et a1. Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures[J] . IEEE Transactions on Nuclear Science 1997,44(6):1989
[23]张华林,陆妩等不同剂量率下偏置对双极晶体管电离辐照效应的影响微电子学第34卷第6期2004年12月
[24]赖祖武,抗辐射电子学-辐射效应及加固原理,国防工业出版社,1998
[25] Rebecca Lynne Baczuk, Sherif Michael, Pspice simulation of total dose effects on composite and single operational amplifiers. September 1994.
[26]童诗白华成英模拟电子技术基础高等教育出版社2001年1月第三版
[27]朱正涌等半导体集成电路清华大学出版社2002
[28] P. C. Adell, R. D. Schrimpf, W. T. Holman, Total Dose Effects in a Linear Voltage Regulator, IEEE Transactions on Nuclear Science VOL. 51, NO. 6, DECEMBER 2004.
[29]Gabriel A, Ricon More, Voltage References from Diodes to Precision High-Order Bandgap Circuits. New York: IEEE Press, 2002:4-16
[30]拉扎维?毕查德模拟CMOS集成电路设计.陈贵灿译西安:西安交通大学出版社. 2003.
[31]H. C. Nauta, E.H. Nordholt, A new class of high performance PTAT current sources, Electron. Lett, VOL.21, 1985: 384-386.
[32]何玉娟,恩云飞,罗宏伟等DC-DC电源模块X射线总剂量辐射效应研究第十五届全国半导体集成电路、硅材料学术会议论文集pp.425-428
[33]I. E. Pizano, T. H. Ma, 1. 0. Attia, R. D. Schrimpf, K. F. Galloway, and A. F. Witulski, Total dose effects on power-MOSFET switching converters Microelectronic Reliability, vol. 38, pp. 1935-1939, 1998.
[34] P. C. Adell, R. D. Schrimpf, B. K. Choi, W. T. Holman, J. P. Attwood, C. R. Cirba, and K. F. Galloway,“Total-dose and single-event effects in switching DC/DC power converters,”IEEE Transactions on Nuclear Science vol. 49, pp. 3217–3221, Dec. 2002.
[35]Chao-Cheng Chen, Sow-Chang tiu, Cheng-Cheng Hsiao, and Jenn-Gwo Hwu, A circuit design for the improvement of radiation hardness in CMOS digital circuits,IEEE Transactions on Nuclear Science vol. 39, No. 2,272, April 1992.
[36]Huadian Pan, Herbert L. Hess, Kevin M. Buck, Method to Improve Total Dose Radiation Hardness in a CMOS dc-dc Boost Converter IEEE 2005 pp.1491-1495
[37] G.A.Rincon-Mora. Current Efficient, Low Voltage, Low Drop-Out Regulators. Ph.D Thesis, Georgia Institute of Technology. Nov, 1996
[38] Very high current, low dropout surface mount voltage regulators.MSK5275 series datasheet, M.S.KENNEDY COMP.
[39]V. Ramachandran, B. Narasimham, Modeling Total-Dose Effects for a Low-Drop -out Voltage Regulator, IEEE Transactions on Nuclear Science,Vol.53 , pp.3223-3231, No. 6, Dec.2006.
[40]Andrew T. Kelly, Philippe C. Adell, Arthur F. Witulski, Total Dose and Single Event Transients in Linear Voltage Regulators IEEE Transactions on Nuclear Science, Vol.54, No. 4, August 2007.
[41]A. H. Johnston S. M. Guertin, The effects of space radiation on linear integrated circuits, in Proc. IEEE Aerospace Conf., 2000, vol. 5, pp.363–369.
[42]National Semiconductor Corporation, Linear Regulators Theory of Operational and Compensation, 2002