一种温度补偿晶体振荡器芯片的设计
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摘要
电子技术发展至今，出现众多获取频率源的方法，其中晶体振荡器(又称：石英晶体谐振器)由于具有良好的频率稳定性而一直作为主要的精确频率源来使用。同时，随着便携式电子产品(如：通讯设备等)的飞速发展，对频率源的精确性提出越来越高的要求，但是由于晶体本身所固有的温度特性，其振荡频率随温度变化呈近似的三次曲线关系离散，影响其应用的温度范围，成为制约其应用的一种因素。因此为在较宽温度范围内获得更高稳定性的精确频率源，通常采用两种方法获得精确频率源：温度控制和温度补偿。
温度控制通过将振荡器中敏感元件置于恒温槽中，对于晶体振荡器来说就是将晶体置于设定了一定温度的烘箱中，从而避免温度对振荡器产生影响。通过该方法可获得极为精确的频率稳定度。但是体积大，功耗高，不利于便携式产品的应用。
另一种方法是通过温度探测器件得到温度信号，利用电路产生和温度频率离散相反的近似三次函数电压，将该电压施加于压控晶体振荡器(Voltage
Controlled Crystal Oscillators，VCXO)中，构成温度补偿晶体振荡器(Temperature
Compensation Crystal Oscillator，TCXO)，从而抵消频率随温度的离散。该方法成本低，功耗、体积小，可方便的应用于各类电子产品中。
本文介绍了一种模拟温度补偿晶体振荡器芯片的设计，该芯片利用集成电路制造工艺，将模拟补偿电路及压控晶体振荡器集成于一颗芯片中，使晶体在使用时只需和一颗芯片搭配使用(可封装于同一个管壳内)，即可在较宽温度范围内提供高精度的频率源。并通过芯片内嵌的EEPROM及ROM对补偿特性的
From the beginning of electronic technical appearance, there conies out many different ways to get frequency source. Because of the good frequency stability, quartz crystal oscillator is mainly used as the precise frequency source. But with the quick progressing of portable electronic products (eg: communication equipment), the requirement of the frequency source is more and more precise. The crystal has an intrinsic temperature characteristic that the oscillator frequency will be deviate from temperature as a 3~(rd) order curve. This characteristic influences the usable temperature range of crystal oscillator. There are two ways to get stable frequency source in a wide range, which are temperature control and temperature compensation.
Temperature control is a way that the sensitive components of the oscillator are placed in a temperature stable chamber. In the case of a crystal oscillator, the crystal is placed in a thermal oven that is held at a constant temperature. By this way, oscillators can escape from the influence of temperature, and the oscillators can get extremely stable precise frequency. However, because of the significant size and large current draw, it cannot fit to the application of portable electronic products.
Temperature compensation is the other way to get the stable precise frequency source. At first, the temperature signal is measured through the temperature sensor, and then the voltage, which will be imposed into the voltage controlled crystal
温度控制通过将振荡器中敏感元件置于恒温槽中，对于晶体振荡器来说就是将晶体置于设定了一定温度的烘箱中，从而避免温度对振荡器产生影响。通过该方法可获得极为精确的频率稳定度。但是体积大，功耗高，不利于便携式产品的应用。
另一种方法是通过温度探测器件得到温度信号，利用电路产生和温度频率离散相反的近似三次函数电压，将该电压施加于压控晶体振荡器(Voltage
Controlled Crystal Oscillators，VCXO)中，构成温度补偿晶体振荡器(Temperature
Compensation Crystal Oscillator，TCXO)，从而抵消频率随温度的离散。该方法成本低，功耗、体积小，可方便的应用于各类电子产品中。
本文介绍了一种模拟温度补偿晶体振荡器芯片的设计，该芯片利用集成电路制造工艺，将模拟补偿电路及压控晶体振荡器集成于一颗芯片中，使晶体在使用时只需和一颗芯片搭配使用(可封装于同一个管壳内)，即可在较宽温度范围内提供高精度的频率源。并通过芯片内嵌的EEPROM及ROM对补偿特性的
From the beginning of electronic technical appearance, there conies out many different ways to get frequency source. Because of the good frequency stability, quartz crystal oscillator is mainly used as the precise frequency source. But with the quick progressing of portable electronic products (eg: communication equipment), the requirement of the frequency source is more and more precise. The crystal has an intrinsic temperature characteristic that the oscillator frequency will be deviate from temperature as a 3~(rd) order curve. This characteristic influences the usable temperature range of crystal oscillator. There are two ways to get stable frequency source in a wide range, which are temperature control and temperature compensation.
Temperature control is a way that the sensitive components of the oscillator are placed in a temperature stable chamber. In the case of a crystal oscillator, the crystal is placed in a thermal oven that is held at a constant temperature. By this way, oscillators can escape from the influence of temperature, and the oscillators can get extremely stable precise frequency. However, because of the significant size and large current draw, it cannot fit to the application of portable electronic products.
Temperature compensation is the other way to get the stable precise frequency source. At first, the temperature signal is measured through the temperature sensor, and then the voltage, which will be imposed into the voltage controlled crystal
引文
1. Hykes, G. R. and Newell, D. E.," A Temperature Compensated Frequency Standdar", Proceedings of the 15th Annual Frequency Control symposium, 1961, pp. 297-317
2. Keller.T, Marvin.D, and Steele.R, "Integrated Circuit Compensation of AT Cut Crystal Oscillators", Proceedings of the 34th Annual Frequency control symposium, 1980, p. 498
3. Frerking M.E., "Methods of Temperature compensation", Proceedings of the 36th Annual Symposium of Frequency Control, 1982,pp.564-570
4. A Novel Approach to Improving The Stability of TCVCXO Temperature Performance, K. R. Ward, 2003IEEE International Frequency Control Symposium and PDA Exhibition Jointly with the 17th European Frequency and Time Forum, p473～477
5．中国电子报，2006．03．02，7版《手机：GSM市场增长强劲》，赛诺市场研究公司
6．高频通讯用晶体振荡器的技术及发展，廖诗文，电子与材料杂志(台湾)，13期
7．AT切石英谐振器频率温度系数的研究，田文杰、路俊岭、张福学、张伟，电子元件与材料，Vol 21 No．9，Sep．2002
8．谈谈规定石英谐振器工作温度范围和频率范围的依据，石文方，航天标准化，2000年第三期
9. Use of the CMOS Unbuffered Inverter in Oscillator Circuits, Moshiul Haque and Ernest Cox, Texas Instruments (TI) Application Report SZZA043, January 2004
10．《微处理机补偿晶体振荡器的设计》，电子科技大学硕士论文
11．一种新的适于集成的模拟温度补偿晶体振荡器的设计，梁珣、黄显核、樊艳红、谭峰、黎敏强，电子器件，Vol 28 No．3，Sept．2005
12．一种全集成化的温补晶体振荡器，江玉洁、陈辰、伏全海、周渭，宇航测量技术，Vol 23 No．3，June 2003
13．一种新型的温度补偿晶体振荡器，赵生双、赵焕绥、王玉国、张沛霖、钟维烈，山东大学学报，Vol 32，No．3，Sept．1997
14．特种调频晶体振荡器的设计与研制，曾庆明，电讯技术，Vol．4 2003
15．高准确度宽温石英晶振热敏网络温度补偿，李建文、祖兵，传感器技术，Vol 23 No．5，2004
16．集成式压控晶体振荡器的优化设计，刘志波，刘刚，高俊雄，于军，华中科技大学学报(自然科学版)，Vol．32 No．12，Dec．2002
17．《从GSM／EDGE到W-CDMA的时钟电路》，Gary Levy，Silicon Laboratories，http://www.portabledesignchina.com/news_view.asp?id=979
18. Analog TCXO Using One Chip LSI for Mobile Communication, Kucihi Kubo, Shuji Shibuya, 1996 IEEE International Frequency Control Symposium
19. Design of Analog CMOS Integrated Circuits, p387-389, Behzad Razavi, 2001, The McGraw-Hill companies,Inc.
20．近似三次函数发生装置以及使用了该装置的温度补偿晶体振荡器电路及其温度补偿发生电路，旭华成微系统株式会社，中国专利公开号：CN1257619A
21．先进半导体存储器——结构、设计与应用，Ashok K．Sharma，电子工业出版社，p225～p333
22. J. Dickson, "On-chip High-Voltage Generation in NMOS Integrated Circuits Using an Improved Voltage Multiplier Technique," IEEE J. Solid-State Circuits, vol. 11, no. 6, pp.74-378, June 1976
23. TCXO TEST SYSTEM FOR MASS PRODUCTION, W. D. Beaver, C.K.Lau, X.M.Sun, S.K.Xu, 2002 IEEE International Frequency Control Symposium and PDA Exhibition, p361～365
24．模拟电路版图的艺术(英文影印版)，Alan Hastings，清华大学出版社，2004．4
2. Keller.T, Marvin.D, and Steele.R, "Integrated Circuit Compensation of AT Cut Crystal Oscillators", Proceedings of the 34th Annual Frequency control symposium, 1980, p. 498
3. Frerking M.E., "Methods of Temperature compensation", Proceedings of the 36th Annual Symposium of Frequency Control, 1982,pp.564-570
4. A Novel Approach to Improving The Stability of TCVCXO Temperature Performance, K. R. Ward, 2003IEEE International Frequency Control Symposium and PDA Exhibition Jointly with the 17th European Frequency and Time Forum, p473～477
5．中国电子报，2006．03．02，7版《手机：GSM市场增长强劲》，赛诺市场研究公司
6．高频通讯用晶体振荡器的技术及发展，廖诗文，电子与材料杂志(台湾)，13期
7．AT切石英谐振器频率温度系数的研究，田文杰、路俊岭、张福学、张伟，电子元件与材料，Vol 21 No．9，Sep．2002
8．谈谈规定石英谐振器工作温度范围和频率范围的依据，石文方，航天标准化，2000年第三期
9. Use of the CMOS Unbuffered Inverter in Oscillator Circuits, Moshiul Haque and Ernest Cox, Texas Instruments (TI) Application Report SZZA043, January 2004
10．《微处理机补偿晶体振荡器的设计》，电子科技大学硕士论文
11．一种新的适于集成的模拟温度补偿晶体振荡器的设计，梁珣、黄显核、樊艳红、谭峰、黎敏强，电子器件，Vol 28 No．3，Sept．2005
12．一种全集成化的温补晶体振荡器，江玉洁、陈辰、伏全海、周渭，宇航测量技术，Vol 23 No．3，June 2003
13．一种新型的温度补偿晶体振荡器，赵生双、赵焕绥、王玉国、张沛霖、钟维烈，山东大学学报，Vol 32，No．3，Sept．1997
14．特种调频晶体振荡器的设计与研制，曾庆明，电讯技术，Vol．4 2003
15．高准确度宽温石英晶振热敏网络温度补偿，李建文、祖兵，传感器技术，Vol 23 No．5，2004
16．集成式压控晶体振荡器的优化设计，刘志波，刘刚，高俊雄，于军，华中科技大学学报(自然科学版)，Vol．32 No．12，Dec．2002
17．《从GSM／EDGE到W-CDMA的时钟电路》，Gary Levy，Silicon Laboratories，http://www.portabledesignchina.com/news_view.asp?id=979
18. Analog TCXO Using One Chip LSI for Mobile Communication, Kucihi Kubo, Shuji Shibuya, 1996 IEEE International Frequency Control Symposium
19. Design of Analog CMOS Integrated Circuits, p387-389, Behzad Razavi, 2001, The McGraw-Hill companies,Inc.
20．近似三次函数发生装置以及使用了该装置的温度补偿晶体振荡器电路及其温度补偿发生电路，旭华成微系统株式会社，中国专利公开号：CN1257619A
21．先进半导体存储器——结构、设计与应用，Ashok K．Sharma，电子工业出版社，p225～p333
22. J. Dickson, "On-chip High-Voltage Generation in NMOS Integrated Circuits Using an Improved Voltage Multiplier Technique," IEEE J. Solid-State Circuits, vol. 11, no. 6, pp.74-378, June 1976
23. TCXO TEST SYSTEM FOR MASS PRODUCTION, W. D. Beaver, C.K.Lau, X.M.Sun, S.K.Xu, 2002 IEEE International Frequency Control Symposium and PDA Exhibition, p361～365
24．模拟电路版图的艺术(英文影印版)，Alan Hastings，清华大学出版社，2004．4