纳米PTCR系列瓷粉的合成、结构与性能研究
详细信息    本馆镜像全文|  推荐本文 |  |   获取CNKI官网全文
摘要
钛酸钡是电子陶瓷元器件的基础母体原料,被广泛的应用于制备高介电陶瓷电容器、多层陶瓷电容器、动态随机存储器等方面,被誉为“电子陶瓷的支柱”。在BaTiO_3陶瓷材料中加入微量的某些施主元素,其室温电阻率会大幅度下降而成为半导体陶瓷,并且当温度上升到它的居里温度Tc=120℃左右时,其电阻率将急剧上升,变化达5-8个数量级,这种现象称为PTC (positive temperature coefficient)效应。PTC特性是钛酸钡陶瓷的重要性能,利用PTC陶瓷的这一特性,已经制备出了温度补偿元件、温度传感器、过电流保护器等多种电子元器件,广泛地应用于了生产生活的各个方面。
     本文首先回顾了目前国内外BaTiO_3基PTC瓷粉的研究概况以及各种粉体制备方法,通过分析不同方法的优点和缺点,本文尝试一种全新的合成方法——低温固态反应法来制备纳米BaTiO_3基PTC瓷粉。本方法的优点是:工艺简单,反应时间短,产率高;能耗低;主要反应不使用溶剂;对环境污染小,有很高的工业化价值。用此种方法合成PTC瓷粉在国内外尚未见报道。
     本实验首先利低温固态反应合成了纯相BaTiO_3粉体。实验过程:量取计算量的TiCl_4,滴加到水中,后加入1:1的氨水调节pH值至7-8。将所得糊状物用去离子水洗涤至无Cl-。取计算量的Ba(OH)_2·8H_2O(Ba/Ti=1)和其他掺杂元素的醋酸盐(La、Y、Nd、Mn等)与TiCl_4在氨水中水解得到的糊状物充分混合,并研磨1h,经100℃烘干后放入马福炉中,800℃焙烧1h,即得到掺杂固溶体粉体固溶体粉体。
     经XRD物相分析证明,此种方法合成的粉体为立方晶系,掺杂后并没有杂质峰出现。TEM形貌分析,粒子为均匀球形,平均粒径50nm左右。通过制陶实验,研究了不同施主元素(La, Nd, Y等)和受主元素(Mn)对PTC陶瓷材料性能的影响。研究表明,施主元素的加入可有效降低材料的室温电阻,受主元素Mn可以极大的提高材料的升阻比。本文研究了不同施主元素和受主元素的掺杂量对PTC材料室温电阻、升阻比、电阻温度系数等电性能参数的变化规律,并讨论了施受主元素的相互补偿作用,以及各个体系的施受主元素的最佳掺杂量。同时,利用程序可控式无压烧结的方法,讨论了烧结条件(烧结温度、保温时间等)对材料各种电性能的影响,并给予了一定的理论解释,同时确定了各个体系的最佳烧结制度。
BaTiO_3, as a kind of very important dielectric material, has been widely used in the production of electric components such as high-property ceramic capacitor, multilayer ceramic capacitor, resonance implement, medium amplifier, and is indispensable in electronic industry. PTCR (positive temperature coefficient of resistivity) property is one of the attractive effects of the semiconducting BaTiO_3, which shows abrupt change (increase) in electrical resistivity at Curie temperature (Tc). A large number of devices based on the PTCR effect, such as heaters, current limiters and chemical sensors are produced both in the form of a bulk ceramic and film.
     In this paper, at first, we reviewed the research of the preparation technology of BaTiO_3-based PTCR ceramic powder both home and abroad. By analysing the advantages and disadvantages of other preparation methods, a new and simple method—solid state reaction at low temperature—was employed to prepare nano-BaTiO_3 ceramic powder. Compared with other synthetic techniques, this method exhibits many advantages:no need for solvent, high productivity and selectivity, low energy consumption and simple reaction technology.
     At first, the pure BaTiO_3 was prepared by solid state reaction at low temperature. A suitable amount of TiCl_4 was slowly added into the deionized water. The pH value of the solution was adjusted to 7-8 by ammonia, and the H_2TiO_3 was formed. Then the Cl~- in H_2TiO_3 must be removed by washing and filtering. The pure H_2TiO_3 and Ba(OH)_2·8H_2O was mixed thoroughly in mortar for 1h at room temperature, then dried at 100℃. The pure BaTiO_3 of cubic phase was prepared in the process of drying at 100℃. Next, the BaTiO_3 -based PTC ceramic powders which were doped different donors and acceptors by acetate were synthesized by this method. A stoichiometrical amount of Ba(OH)_2·8H_2O and different dopant in the form of acetate were mixed and ground with H_2TiO_3 which was produced by hydrolysis of TiCl_4, then dried at 100℃. The doped BaTiO_3 powders were obtained by calcining the precursor for 1h at 800℃. XRD patterns demonstrate that the powders synthesized by this method are cubic perovskite structure, and the figures represent the presence of only BaTiO_3 peaks in the samples with and without additives. TEM photograph shows that the particles of the compounds are uniform and substantially spherical in shape with an average particle size of 50 nm in diameter. The PTC effect of the materials has been studied by preparing ceramics. The influence of various donors (La, Nd, Y) and acceptor (Mn) on properties of PTC materials has been discussed in this article. The resistance at room temperature decreases by doping donor dopant, and the resistance jump increases dramatically by doping Mn. The variations of different donors and acceptors concentration on properties of PTC ceramic materials, such as resistance at room temperature, resistance jump and resistance temperature coefficient, have been studied in detail. Moreover, the effect of sintering conditions (sintering temperature, soaking time) has been discussed and explained to some extent in my opinion, and the optimal sintering conditions of different system are confirmed.
引文
[1]H. Nagamoto, H. Kagotani, T. Okubo Positive temperature coefficient of resistivity in Ba1-xSrxPb1+yO3-δ ceramics [J] J. Am. Ceram. Soc.,1993,76 (8):2053-2056
    [2]H Emoto, J Hojo Sintering and dielectric properties of BaTiO3-Ni composite ceramics [J] Ceram Soc Jpn,1992,100:555-559.
    [3]Ho I C. Semiconducting barium titanate ceramics prepared by boron containing liquid-phase sintering J Am Ceram Soc 1994,77 (3):829-832
    [4]周东祥,龚树萍PTC材料及应用[M] 华中理工大学出版社1989
    [5]周秀娟,刘心宇PTC陶瓷材料的发展及应用 电工材料2005,3:38-41
    [6]孙晓龙,曲远方,马卫兵PTC材料发展概况化学工业与工程2002,19(4):320~324
    [7]张晨,梁波PTC陶瓷材料制备与应用 硅酸盐通报2005,5:64-68
    [8]W. Heywang Resistivity anomaly in doped barium titanate[J] J. Am. Ceram. Soc.1964,47 (10): 484-489.
    [9]W. Heywang, Semiconducting barium titanate" J Mater Sci,1971,6:1214-1226.
    '[10] Jonker, G. H. Some aspects of semiconducting barium titanate[J] Solid State Electron 1964,7: 895-903.
    [11]G. H. Joker. Some aspects of semiconducting barium titanate[J]. Solid State Electronics 1964,7: 895-903,
    [12]Daniels. J, Haerdtl. K. H, Wernicke. R. PTC effect of barium titanate[J]. Philip Technical Review 1978,38 (3):73-82
    [13]Daniels J, Haerdtl K. H. Electrical conductivity at high temperatures of donor-doped barium titanate ceramics em dash 1 [J]. Philips Research Reports 1976,31 (6):489-504
    [14]Daniels J:Defect equilibria in acceptor-doped barium titanate em dash 2 [J] Philips Research Reports 1976,31(6):505-515
    [15]Desu. S. B., Payne D. A. Interfacial segregation in perovskites:Ⅰ Theory [J] Journal of the American Ceramic Society 1990,73 (11):3391-3397
    [16]Desu. S. B., Payne D. A. Interfacial segregation in perovskites:Ⅱ Experimental evidence [J] J. Am. Ceram. Soc 1990,73 (11):3398-3406
    [17]薛泉林PTC热敏电阻器发展与应用动态山东陶瓷1997,12:20(4)9-13
    [18]黄望军PTCR的特性与应用 电机电器技术1999,4: 40-43
    [19]苏毅,杨亚玲,李国斌钛酸钡陶瓷粉体的合成技术化工进展2001,2:48-51
    [20]余家国,张联盟高纯超细陶瓷粉料溶胶凝胶法制备工艺硅酸盐通报 1990,21(1):45-50
    [21]Lee E. S., Lim D. Y. Yoop Hakhoechi Structural and electrical properties of Dy-doped barium sodium niobate ceramics [J] 1985,22 (6):9-13
    [22]栾伟玲,高濂,郭景坤溶胶-凝胶法制备纳米BaTiO3粉体的影响因素无机化学学报1999,14(6):861-865
    [23]苏毅,杨亚玲,胡亮溶胶-凝胶法制备钛酸钡超细粉体的研究化学研究与应用 2002,14(2):201-204
    [24]李汶军,施尔畏,郑燕青等水热法制备BaTiO3粉体1999,6(27):714-720
    [25]Ding, S.-W.; Wang, J.; Qin, J.-L.; Li, X.-M. Hydrothermal synthesis, structure and property of nano-BaTiO3-based dielectric materials [J] Sci.China, Ser. B 2001,6 (31):525-529
    [26]关自斌,高仁喜,毛天舒等电子陶瓷用钛酸钡粉体的制备技术进展及市场供需述评湿法冶金1997,(4)::1-10
    [27]沈志刚,陈建峰,刘方涛等纳米钛酸钡电子陶瓷粉体的制备技术化工进展2002,21(1):34-36
    [28]齐建全,桂治轮,李龙土蒸汽掺杂-一种新的钛酸钡基PTCR陶瓷的掺杂方法无机材料学报1999,14(3):408-412
    [29]崔爱莉,陈仁政,尉京志熔盐法包覆BaTiO3.及其介电性能无机化学学报2001,17(5):627-630
    [30]Renzheng Chen, Aili Cui, Xiaohui Wang, Longtu Li. Barium titanate coated with magnesium titanate via fused salt method and its dielectric property [J] Materials science & engineering.B,2003:302-305
    [31]张道礼,曹明贺,周东祥等微波场中BaTiO3陶瓷的烧结及施、受主掺杂对晶粒生长的影响功能材料 2000,31(5): 528-530
    [32]朱云松, 徐天华.高温PTC陶瓷中铅对Tc移动效果的实验 电子元件与材料,1997,16(3):20-22
    [33]汪小红,龚树萍,周东祥等PTC限流元件的失效形式及规律研究陶瓷工程2000(12):3-6
    [34]侯峰,曲远方,徐庭献等Ni/PTC陶瓷复合材料的研究热固性树脂1999(4):50-53
    [35]赖希伟钛酸钡系热敏电阻器的工艺改进 电子元件与材料1997,16(6):27-30
    [36]李道华,叶向荣,忻新泉纳米材料的室温(湿)固相化学反应合成化学研究与应用 1999,11(4):415-418
    [37]景苏,鲁新宇室温固相法合成纳米FeOOH及Fe_20_3,南京工业大学学报2002,24(6):52-55
    [381卫芝贤,胡双启,金宠,丁骋南室温固相法制备高纯超细氢氧化铝应用基础与工程科学学报2003,11(2):121-125
    [39]Ying Chen. Low-temperature oxidation of ilmenite(FeTiO3) induced by high energy ball milling at room temperature [J] Journal of Alloys and Compounds 1997.257:156-160
    [40]Li Qingwen, Wang Yiming, Luo Guoan pH-Response of nanosized MnO2 prepared with solid state reaction route at room temperature[J] Sensors and Actuators B 1999,59:42-47
    [41]Xiaohong Liu, Lan Yu Synthesis of nanosized nickel hydroxide by solid-state reaction at room temperature[J] Materials Letters 2004,58:1327-1330
    [42]范志新,高红 电子陶瓷材料最佳掺杂含量的理论研究中国陶瓷 2002,38(1):1-3
    [43]Chatterjee, S., Sengupta, K. and Maiti, H. S. A miniature PTC thermistor based sensor elementfabricated by tape casting technique [J] Sens. Actuators B,1999,60 (2):155-160
    [44]Kleint, C. A., Stoepel, U. and Rost, A. X-ray diffraction and conductivity investigations of lanthanum-doped barium titanate ceramics [J] Phys. Status Solidi A,1989,115:165-172
    [45]Voltzke, D., Abicht, H.-P., Pippel, E. and Woltersdorf, J. Ca-containing additives in PTC-BaTiO3 ceramics:effects on the microstructural evolution [J] J. Eur. Ceram. Soc 2000,20:1663-1669
    [46]Chen,L.-F. Tseng, T.-Y. Grain-boundary surface states of (Ba,Pb)TiO3 positive temperature coefficient ceramics doped with different additives and its influence on electrical properties[J] IEEE. T. Compon. Pack. Manu. A,1996,19:423-430
    [47]Zajc, I. and Drofenik, M. Semiconducting BaTiO3 ceramic prepared by low temperature liquid phase sintering [J] Mater. Res.1998,13:660-664
    [48]Gillot, C., Michenaud, J.-P., Baukens, I. and Duvigneaud, P.-H. Microscopic original of the PTC effect in niobium-doped barium titanate[J] J. Am. Ceram. Soc,1997,80:1043-1046
    [49]Heywang, W. Barium titanate as semiconductor with blocking layers [J] Solid State Electron,1961,3: 51-58
    [50]Ding Shi-Wen, Wang Jing, Qin Jiang-Lei, Li Xi-Mao. Hydrothermal synthesis, structure and property of nano-BaTiO3-based dielectric materials [J] Sci. China, Ser. B,2001,6 (31):525-529
    [51]苏毅,杨亚玲,胡亮 溶胶-凝胶法制备钛酸钡超细粉体的研究化学研究与应用 2002(2):201-204
    [52]LIU M-L, ZHOU H-L, CHEN Y-R. Room temperature solid-solid reaction preparation of iron boron alloy nanoparticles and Mossbauer spectra [J] Materials Chemistry and Physics 2005,89: 289-294
    [53]曹明贺,周东祥,龚树萍.Ca对BaTiO3PTCR热敏电阻性能的影响电子元件与材料2000,19(4):18-19.
    [54]张中太,米庆,孙红飞Y半导(BaSr) TiO3系PTCR陶瓷Nb, Mn二次掺杂效果功能材料1998,29(4):366-369
    [55]Junghee C, Kunichi M, Makoto K. Influence of Hydrolysis Water Content on The Microstructure of BaTiO3 Xerogels Prepared from High Concentration Metal Alkoxide Solutions [J]. Journal of Sol-Gel Science and Technology,2002,23:9-14
    [56]刘静波,王智民,郑春萍等 镧掺杂钛酸钡纳米晶陶瓷元件的湿敏特性功能材料与器件学报,2000,6(2):106-109.
    [57]Chi Y,Hsu P f, Lan J W,et al. J Phy. Chem. of Solids,2001,62:543-551
    [58]毛翠萍,陈亿俗,韩晓东等低电阻率、大升阻比Ba-TiO3基PTCR陶瓷材料电子元件与材料,2003,22(11):35-39.
    [59]N. Kurata, M. Kuwabara Semiconducting-Insulating Transition for Highly Donor-Doped Barium Titanate Ceramics [J] J. Am. Ceram. Soc.,1993,76 (6):1605-1608
    [60]Kuwabara M. Effect of microstructure on the PTCR effect in semiconducting barium titanate ceramics[J] J Am Ceram Soc 1981,64(11):639-642
    [61]T. Kimura, S. Miyamoto, T. Yamaguchi Microstructure Development and Dielectric Properties of Potassium Strontium Niobate Ceramics [J] J. Am. Ceram. Soc.1990,73 (1):127-130
    [62]M. J. Zajc Drofenik. M. Semiconducting BaTiO3 ceramic prepared by low temperature liquid phase sintering [J] J. Mater. Res.1998,13:660-664
    [63]MORRISON F D, COATS A M, WEST A R. Charge compensation mechanisms in La-doped BaTiO3 [J] J Electro-ceram.2001,6(3):219-232
    [64]Heywang. W. Barium titanate as semiconductor with blocking layers [J] Solid State Electron 1961,3:51-58.
    [63]龙德良梁斌忻新泉室温和低热固相反应在合成化学中的应用应用化学 1996,13(6):1-6。
    [64]贾殿赠俞建群夏熙一步室温固相化学反应法合成CuO纳米粉体科学通报.1998,43(2):172-174
    [65]李清文曹雅丽李娟等温固相反应制备AgX纳米粉末化学物理学报1999,12(1):99-102
    [66]S. Naka, S. Hayakawa, Practical Distribution State Estimation Using A Hybrid Particle Swarm Optimization Electro-ceramics,1986,9:36-38
    [67]CAO Minghe, YUAN Jun, CAO Mingli, et al. Influence of Sintering Schedule on the Electrical Properties of Mn(NO3)2-doped Ba0.92Ca0.08TiO3 PTCR Ceramics[J] Rare Metals 2004,23(3):274-278
    [68]Zhao, J., Li, L. and Gui, Z., Modelling effects of short fibers on reinforced glass matrix sintering behaviour[J] Ceram. Int.2002,28:261-265
    [69]Qi Jianquan, Gui Zhilun, Wu Yajing, et al. Enhancement of PTCR effect of semiconducting Ba1-xSrxTiO3 by Sb2O3 vapor [J]. Sensor and Actuators A,2001,93:84-85.
    [70]KOWALSKI K, IJJAALI M, BAK T, et al. Electrical properties of Nb-doped BaTiO3[J]. J Phy Chem of Solids 2001,62:543-551.
    [71]马卫兵,曲远方双施主掺杂PTC陶瓷及其多层结构工艺研究硅酸盐通报2003,(4):33-35.
    [72]姜胜林,龚树萍,周莉等双施主掺杂BaTiO3半导体陶瓷材料的研究压电与声光2000,22(6):392-394.
    [73]谢智勇,马卫兵,曲远方等双施主掺杂对BaTiO3基PTC陶瓷性能的影响 电子元件与材料2003,22(1):11-13.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700