直流磁控反应溅射制备ZnO：Ga薄膜及其性能研究
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摘要
ZnO是一种Ⅱ-Ⅵ族化合物半导体材料,属于六方纤锌矿结构,(002)晶面的表面自由能最低,因而ZnO通常具有[0001]取向性生长。作为一种直接带隙宽禁带半导体材料,ZnO最具潜力的应用是在光电器件领域。ZnO的禁带宽度为3.37eV,激子结合能为60meV,远高于其它宽禁带半导体材料,如GaN为25meV,ZnO激子在室温下也是稳定的,可以实现室温或更高温度下高效的激子受激发光,所以,ZnO在短波长光电器件领域有着极大的应用潜力,如紫蓝光发光二极管(LEDs)和激光器(LDs)等,可作为白光的起始材料。另外掺入ⅢA族元素Al、In、Ga等可以实现各方面性能都很好的n型ZnO薄膜,如非常低的电阻率,最低可达到10~(-4)数量级;非常高的可见光范围的透过率,可达到90%以上;制备的薄膜高度的c轴择优取向等;可以作为很好的LEDs的接触电极。
本课题是利用直流磁控反应溅射在玻璃衬底上制备ZnO:Ga透明导电薄膜,并利用多种测试手段分析了其性能,获得了一些结果:
1.用大型无机原型设备直流磁控反应溅射仪在玻璃衬底上制备了ZnO:Ga透明导电薄膜。XRD测试表明制备的薄膜具有良好的c轴择优取向,并且证明了薄膜中的Ga是以替位式取代了六角晶格中的部分Zn原子的位置或者Ga原子弥散在薄膜晶粒间区域。
2.SEM显示制备的薄膜表面致密化程度高,结构完整。Hall测试得出薄膜的电阻率低、迁移率和载流子浓度高,并且薄膜与电极的接触为欧姆接触。透射谱分析得到薄膜在可见光范围内的透过率达到90%以上。
3.研究了各个实验参数对薄膜性能的影响,找出了各个参数的最佳值分别为:氧气、氩气流量分别为5sccm和40sccm;衬底温度最佳值为275℃;溅射压强为1.5Pa;溅射功率最佳值为130W;靶间距为6cm。
4.制备的薄膜电阻率最低达到2.32×10~(-3)Ωcm,载流子浓度最高达到1.27×10~(20)cm~(-3)。
Zinc oxide (ZnO) is a novel II-VI compound semiconductor with a hexagonal wurtzite structure. It grows usually along the [0001] orientation due to its lower surface free energy for the (002) plane. ZnO is a unique material that exhibits optoelectronic, piezoelectric, and ferromagnetic properties, as well as its versatile nanostructures. In particular, it is a potential candidate for applications in short-wavelength optoelectronic devices, including light emitting diodes (LEDs) and laser diodes (LDs), due to its direct wide-band gap (3.37 eV) and high exciton binding energy (60 meV, cf. 25 meV for GaN), which will favor efficient excitonic emission at room temperature. In addition, good quality n-type ZnO films have been prepared by doped IIIA elements (Al, In, Ga). The resistivity of the film can be down to 10~-4Ωcm;The transmittance of the film can be more than 90% in the visible region. All the films were of good crystal quality with high (002) orientation and closed packed columnar grains, which can be used for contact electrode in LEDs.This thesis is that preparing Gallium doped zinc oxide (ZnO:Ga) films on glass substrates by DC magnetron reactive sputtering and using various testing technique to analyze the performance of the film.The main content of this thesis is listed as follows:1. The obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the [0001] crystallographic direction in the ZnO grains by XRD testing and the Ga atom in the film occupies the Zn position or distributes in the boundary of the crystal2. Good quality, compact surface and integrated structure have been observed by SEM. Hall testing shows that the resistivity of the film is lower than other ZnO films and the carrier concentration is much higher. The contact between the film and electrode is ohm contact. The transmittance of the film can be more than 90% in the visible region.3. Studying the dependence of the performance of the film on the experimental
parameters, we find out the optimal value of various experimental parameters: the flux of O2 and Ar are 5sccm and 40sccm;the substrate temperature is 275 °C;the sputtering pressure is 1.5Pa;the sputtering power is 130W;the target-substrate distance is 6cm.4. The lowest resistivity of the film is 2.32 X 10"3Qcm, the carrier concentration is 1.27X1020cm"3o
本课题是利用直流磁控反应溅射在玻璃衬底上制备ZnO:Ga透明导电薄膜,并利用多种测试手段分析了其性能,获得了一些结果:
1.用大型无机原型设备直流磁控反应溅射仪在玻璃衬底上制备了ZnO:Ga透明导电薄膜。XRD测试表明制备的薄膜具有良好的c轴择优取向,并且证明了薄膜中的Ga是以替位式取代了六角晶格中的部分Zn原子的位置或者Ga原子弥散在薄膜晶粒间区域。
2.SEM显示制备的薄膜表面致密化程度高,结构完整。Hall测试得出薄膜的电阻率低、迁移率和载流子浓度高,并且薄膜与电极的接触为欧姆接触。透射谱分析得到薄膜在可见光范围内的透过率达到90%以上。
3.研究了各个实验参数对薄膜性能的影响,找出了各个参数的最佳值分别为:氧气、氩气流量分别为5sccm和40sccm;衬底温度最佳值为275℃;溅射压强为1.5Pa;溅射功率最佳值为130W;靶间距为6cm。
4.制备的薄膜电阻率最低达到2.32×10~(-3)Ωcm,载流子浓度最高达到1.27×10~(20)cm~(-3)。
Zinc oxide (ZnO) is a novel II-VI compound semiconductor with a hexagonal wurtzite structure. It grows usually along the [0001] orientation due to its lower surface free energy for the (002) plane. ZnO is a unique material that exhibits optoelectronic, piezoelectric, and ferromagnetic properties, as well as its versatile nanostructures. In particular, it is a potential candidate for applications in short-wavelength optoelectronic devices, including light emitting diodes (LEDs) and laser diodes (LDs), due to its direct wide-band gap (3.37 eV) and high exciton binding energy (60 meV, cf. 25 meV for GaN), which will favor efficient excitonic emission at room temperature. In addition, good quality n-type ZnO films have been prepared by doped IIIA elements (Al, In, Ga). The resistivity of the film can be down to 10~-4Ωcm;The transmittance of the film can be more than 90% in the visible region. All the films were of good crystal quality with high (002) orientation and closed packed columnar grains, which can be used for contact electrode in LEDs.This thesis is that preparing Gallium doped zinc oxide (ZnO:Ga) films on glass substrates by DC magnetron reactive sputtering and using various testing technique to analyze the performance of the film.The main content of this thesis is listed as follows:1. The obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the [0001] crystallographic direction in the ZnO grains by XRD testing and the Ga atom in the film occupies the Zn position or distributes in the boundary of the crystal2. Good quality, compact surface and integrated structure have been observed by SEM. Hall testing shows that the resistivity of the film is lower than other ZnO films and the carrier concentration is much higher. The contact between the film and electrode is ohm contact. The transmittance of the film can be more than 90% in the visible region.3. Studying the dependence of the performance of the film on the experimental
parameters, we find out the optimal value of various experimental parameters: the flux of O2 and Ar are 5sccm and 40sccm;the substrate temperature is 275 °C;the sputtering pressure is 1.5Pa;the sputtering power is 130W;the target-substrate distance is 6cm.4. The lowest resistivity of the film is 2.32 X 10"3Qcm, the carrier concentration is 1.27X1020cm"3o
引文
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