SOI基光波导器件的模拟与实现
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摘要
光纤通信的基础是光电子技术，其大量的光-电-光转换在一方面利用了成熟而廉价的集成电路技术，另一方面却也受到电子瓶颈的影响而限制了其通信容量的最大化。与微电子技术的发展一样，光电子技术或光子技术的发展目标仍然是集成，这类集成现在一般通称为光集成。光集成有两个方向，功能集成和个数集成，集成方式有光光集成和光电集成，而集成方法有单片集成和混合集成。硅材料无疑在集成光学里扮演了一个重要的角色，首先它的透明窗口恰好就在光通信频段；其次，其强大、廉价而成熟的微细加工工艺是光集成必不可少的；第三，硅的等离子体色散效应使其具有了实现调制器、光开关的可能性；第四，绝缘体上的硅(SOI)材料制备技术的成熟拓宽了硅材料在集成光学中的应用范围，使光子器件集成、光子晶体器件集成成为可能。
本论文工作主要集中在SOI基光器件和光电器件的设计和工艺方面。有限元方法是波导光学模式求解的重要方法之一，罚项方法能消除传统全矢量节点有限元解中始终存在的伪模，作者在该方法基础之上，对罚因子进行了改进，提出了新的罚项，并对该方法的理论背景进行了阐述。采用该方法提高了模式的求解效率，得到了更好的本征模场和本征值，但是伪模仍然存在。棱边有限元方法是目前解决伪模问题的最好方法，由于SOI波导很高的折射率差，必须采用全矢量方法才能准确的设计单模波导。本文在Matlab上实现了全矢量棱边有限元方法，边界层用完全匹配层做为吸收层，对SOI脊形波导的模式进行求解，并与有效折射率方法所得的结果进行了比较分析。同时采用该方法计算了SOI基硅线的模式特征与氧化物埋层厚度的关系，得到了低泄漏损耗必需的氧化物埋层厚度为1μm的结论。
采用标量节点有限元方法分析了平面TE模和TM模下的SOI光子晶体Y分支和三分支结构，计算了光在其中的传播模式，并获得了其在100 THz—300THz范围内的透射功率谱；计算了SOI微环谐振腔结构的响应谱，以及反射辅助型的微环谐振腔的响应函数，采用符号计算工具分析了其各端口的最优响应条件。
设计并实现了SOI基可调光衰减器。应用棱边元方法设计了其脊形波导的导波结构，电极特性的设计分别采用了载流子运动的扩散模型和漂移-扩散模型。并用有限元方法实现了这两种模型的数值求解，优化并获得了载流子在波导截面的分布。通过数值模拟优化电极距离、掺杂浓度等参数，设计并流片实现了衰减器芯片。用Protel设计了镍金材质的PCB测试板，并完成了经过CMP抛光后的衰减器芯片与PCB板的搭线封装。完成了VOA中p-i-n结的I—V特性测试，以及VOA的电流—衰减特性和功率—衰减特性测试。VOA的衰减特性比较明显，首次流片和无冷却的情况下，动态衰减范围达到了14dB。将p-i-n结的I—V特
Optical fiber communication is based on opto-electronic technology. On the one hand, the realization of its dense opto-electro-opto conversion benefits from the cheap and mature integrated circuit technology, and the other, the electronic bottleneck limits the communication capability to far less than the fiber can load. Just like the development of microelectronic technology, the goal of the opto-electronic or photonic technology is integration. This kind of integration is called as optical integration. There are two directions of the optical integration: one is function integration, and the other is amount integration. The two ways of integration are opto-opto and opto-electronic integration. The two integration methods are single-chip and hybrid integration. Silicon is an important kind of material. At first, the transparent frequency window of silicon is same with the optical fiber. Secondly, the optical integration needs the powerful, low-cost and mature micro-manufacturing technology for silicon. Thirdly, plasma effect in silicon makes it possible to realize optical modulator or switch. Fourthly, the maturation of silicon-on-insulator (SOI) wafer forming technology broaden the application area of silicon in optical integration, such as for photonic devices (silicon wire, microring resonator), photonic crystal devices etc.
This paper focused on the design and fabrication of optical and opto-electronic devices on SOI wafer. The finite element method is an important numerical method to solve the modes of optical waveguie. When the conventional nodal element is used to solve the full vector Helmoholtz equation, the spurious modes appear. The penalty term is added to the respecting functional and the spurious modes are suppressed out of the interesting area. But defining an appropriate penalty factor is difficult and based on experiences. This paper gave another kind of penalty term, which could improve the mode fields and eigenvalues. The solution efficiency was also enhanced. The physical background of this penalty term was analyzed. The nodal element destines the spurious modes in full Helmholtz equation. This problem is solved inside and out when the vector element is applied in the finite element method. The Matlab program to realize this numerical method was written. The perfect matched layers (PMLs) were also introduced in the numerical model of SOI rib waveguide. The eigenvalues in this numerical method were compared with the ones from the effective index method. The loss relation of leaking to substrate with the buried oxide (BOX) thickness for silicon wire was calculated, and its leaking field was also analyzed.
The Y-branch and 3-branch of SOI photonic crystal were calculated by the two-dimension scalar finite element method in in-plane TE and TM polarization. The power transmission spectra were obtained. This method was also applied to calculate the response spectra of microring resonator. The symbol toolbox of Matlab helped to analyze the response spectra of reflection-assisted microring resonator. Its best response conditions of different ports were achieved.
本论文工作主要集中在SOI基光器件和光电器件的设计和工艺方面。有限元方法是波导光学模式求解的重要方法之一，罚项方法能消除传统全矢量节点有限元解中始终存在的伪模，作者在该方法基础之上，对罚因子进行了改进，提出了新的罚项，并对该方法的理论背景进行了阐述。采用该方法提高了模式的求解效率，得到了更好的本征模场和本征值，但是伪模仍然存在。棱边有限元方法是目前解决伪模问题的最好方法，由于SOI波导很高的折射率差，必须采用全矢量方法才能准确的设计单模波导。本文在Matlab上实现了全矢量棱边有限元方法，边界层用完全匹配层做为吸收层，对SOI脊形波导的模式进行求解，并与有效折射率方法所得的结果进行了比较分析。同时采用该方法计算了SOI基硅线的模式特征与氧化物埋层厚度的关系，得到了低泄漏损耗必需的氧化物埋层厚度为1μm的结论。
采用标量节点有限元方法分析了平面TE模和TM模下的SOI光子晶体Y分支和三分支结构，计算了光在其中的传播模式，并获得了其在100 THz—300THz范围内的透射功率谱；计算了SOI微环谐振腔结构的响应谱，以及反射辅助型的微环谐振腔的响应函数，采用符号计算工具分析了其各端口的最优响应条件。
设计并实现了SOI基可调光衰减器。应用棱边元方法设计了其脊形波导的导波结构，电极特性的设计分别采用了载流子运动的扩散模型和漂移-扩散模型。并用有限元方法实现了这两种模型的数值求解，优化并获得了载流子在波导截面的分布。通过数值模拟优化电极距离、掺杂浓度等参数，设计并流片实现了衰减器芯片。用Protel设计了镍金材质的PCB测试板，并完成了经过CMP抛光后的衰减器芯片与PCB板的搭线封装。完成了VOA中p-i-n结的I—V特性测试，以及VOA的电流—衰减特性和功率—衰减特性测试。VOA的衰减特性比较明显，首次流片和无冷却的情况下，动态衰减范围达到了14dB。将p-i-n结的I—V特
Optical fiber communication is based on opto-electronic technology. On the one hand, the realization of its dense opto-electro-opto conversion benefits from the cheap and mature integrated circuit technology, and the other, the electronic bottleneck limits the communication capability to far less than the fiber can load. Just like the development of microelectronic technology, the goal of the opto-electronic or photonic technology is integration. This kind of integration is called as optical integration. There are two directions of the optical integration: one is function integration, and the other is amount integration. The two ways of integration are opto-opto and opto-electronic integration. The two integration methods are single-chip and hybrid integration. Silicon is an important kind of material. At first, the transparent frequency window of silicon is same with the optical fiber. Secondly, the optical integration needs the powerful, low-cost and mature micro-manufacturing technology for silicon. Thirdly, plasma effect in silicon makes it possible to realize optical modulator or switch. Fourthly, the maturation of silicon-on-insulator (SOI) wafer forming technology broaden the application area of silicon in optical integration, such as for photonic devices (silicon wire, microring resonator), photonic crystal devices etc.
This paper focused on the design and fabrication of optical and opto-electronic devices on SOI wafer. The finite element method is an important numerical method to solve the modes of optical waveguie. When the conventional nodal element is used to solve the full vector Helmoholtz equation, the spurious modes appear. The penalty term is added to the respecting functional and the spurious modes are suppressed out of the interesting area. But defining an appropriate penalty factor is difficult and based on experiences. This paper gave another kind of penalty term, which could improve the mode fields and eigenvalues. The solution efficiency was also enhanced. The physical background of this penalty term was analyzed. The nodal element destines the spurious modes in full Helmholtz equation. This problem is solved inside and out when the vector element is applied in the finite element method. The Matlab program to realize this numerical method was written. The perfect matched layers (PMLs) were also introduced in the numerical model of SOI rib waveguide. The eigenvalues in this numerical method were compared with the ones from the effective index method. The loss relation of leaking to substrate with the buried oxide (BOX) thickness for silicon wire was calculated, and its leaking field was also analyzed.
The Y-branch and 3-branch of SOI photonic crystal were calculated by the two-dimension scalar finite element method in in-plane TE and TM polarization. The power transmission spectra were obtained. This method was also applied to calculate the response spectra of microring resonator. The symbol toolbox of Matlab helped to analyze the response spectra of reflection-assisted microring resonator. Its best response conditions of different ports were achieved.
引文
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