高温超导薄膜的制备及相关特性的研究
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摘要
本文的研究工作主要分为两个部分,第一部分研究了YBCO薄膜生长条件和性质,第二部分是Tl2212薄膜的制备和相关性质的研究。
第一部分,由于LaAlO3基片与YBCO的晶格匹配比较好,在LaAlO3基片上生长YBCO薄膜相对比较容易,所以本文采用脉冲激光沉积法(PLD)对LaAlO3基片直接生长YBCO进行了研究。系统地摸索了不同工艺参数,如基片温度、基片与靶材的距离、激光脉冲频率、激光能量、沉积气压、薄膜厚度等对YBCO薄膜的影响,得出了沉积薄膜的最佳工艺。
但是,PLD制备无可避免会造成薄膜表面有小的颗粒,且沉积的薄膜还存在厚度不均匀等问题。这些缺点将严重影响薄膜的性质和质量,如Jc,Rs等。为了提高工艺的稳定性和成品率,为超导应用研究奠定基础,本文对提高薄膜的均匀性以及薄膜两面的一致性进行了探索。
第二部分,介绍了两步法制备TBCCO(Tl2212)薄膜。首先我们研究了Tl源的生长条件,找到了最佳的实验温度。其次对在大气压下、不同温度制备的薄膜进行研究,探索了最佳的实验条件。
运用XRD、SEM等手段分析了制备的薄膜样品。研究表明薄膜具有较好的C轴取向,表面特征良好,具体性质指标如:Rs小于0.5 m?、临界电流密度均匀且全部在106数量级以上、超导转变温度最高108.1k等。实验结果显示,我们采用单温铊化的方法可以制备出用于微波测量的两面均匀一致的大膜。
随着微电子器件市场潜力的逐渐显现,人们对超导实用化也提出了新的要求。为了采用离子注入的方法做Josephson结,进一步用相应的方法研发出SQUID器件,我们首先对用于制备微波器件的薄膜进行H2+注入,找到了最合适的剂量,为后面的工作奠定基础。
This study mainly divided into two parts: the first part is the growing conditions and the characters of the YBCO thin film, the preparation and characters of Tl2212 thin film is on the second part.
The first part, the substrate lattice of LaAlO3 and YBCO match well and it is relatively easy to grow YBCO thin film on LaAlO3 substrate, so this article study the directly growth of YBCO thin film on LaAlO3 substrate by the method of pulsed laser deposition (PLD). It is systems explored that the impact on YBCO thin film of different technical parameters, such as the substrate temperature, the distance between the target and the substrate, laser pulse frequency, laser energy, deposition pressure, and the film thickness, etc. and the best film of the deposition process is found.
However, the thin film made by the method of PLD will inevitably cause some problem, for example the surface of small particles and sediment thickness of the film are also uneven. These shortcomings will seriously affect the characters of film, such as Jc, Rs, and so on. In order to improve the process of stability and yield and further lay the foundation for the application of superconductor, this paper explore the improvement of the uniformity of the film and the consistency of the double thin film. The second part introduced Tl2212 thin film by two-step Preparation. First of all, we study the growth conditions of Tl source and find the best experimental temperature. Then Films is prepared in the atmospheric pressure at the different temperature to explore the best experimental conditions.
It is analysed that the success of the film samples by XRD, SEM, etc. The result shows that the film has good C-axis oriented, good surface characteristics, the specific characters of indicators such as: Rs less than 0.5 m ?, the uniformity of the critical current density, the number of all the 106 level and above, the highest superconductor transition temperature of 108.1 k. The specific experimental results show that we can prepared the uniform double film for the measurement of microwave by the method of single temperature.
As the market potential of the microelectronics devices gradually increase, so the application of superconductor are also made new demands. In order to make Josephson junction using the method of ion implantation, and further prepared SQUID devices by the corresponding method, first we implant the film by H2+ in order to find the most appropriate dose to make a basis for the behind work.
第一部分,由于LaAlO3基片与YBCO的晶格匹配比较好,在LaAlO3基片上生长YBCO薄膜相对比较容易,所以本文采用脉冲激光沉积法(PLD)对LaAlO3基片直接生长YBCO进行了研究。系统地摸索了不同工艺参数,如基片温度、基片与靶材的距离、激光脉冲频率、激光能量、沉积气压、薄膜厚度等对YBCO薄膜的影响,得出了沉积薄膜的最佳工艺。
但是,PLD制备无可避免会造成薄膜表面有小的颗粒,且沉积的薄膜还存在厚度不均匀等问题。这些缺点将严重影响薄膜的性质和质量,如Jc,Rs等。为了提高工艺的稳定性和成品率,为超导应用研究奠定基础,本文对提高薄膜的均匀性以及薄膜两面的一致性进行了探索。
第二部分,介绍了两步法制备TBCCO(Tl2212)薄膜。首先我们研究了Tl源的生长条件,找到了最佳的实验温度。其次对在大气压下、不同温度制备的薄膜进行研究,探索了最佳的实验条件。
运用XRD、SEM等手段分析了制备的薄膜样品。研究表明薄膜具有较好的C轴取向,表面特征良好,具体性质指标如:Rs小于0.5 m?、临界电流密度均匀且全部在106数量级以上、超导转变温度最高108.1k等。实验结果显示,我们采用单温铊化的方法可以制备出用于微波测量的两面均匀一致的大膜。
随着微电子器件市场潜力的逐渐显现,人们对超导实用化也提出了新的要求。为了采用离子注入的方法做Josephson结,进一步用相应的方法研发出SQUID器件,我们首先对用于制备微波器件的薄膜进行H2+注入,找到了最合适的剂量,为后面的工作奠定基础。
This study mainly divided into two parts: the first part is the growing conditions and the characters of the YBCO thin film, the preparation and characters of Tl2212 thin film is on the second part.
The first part, the substrate lattice of LaAlO3 and YBCO match well and it is relatively easy to grow YBCO thin film on LaAlO3 substrate, so this article study the directly growth of YBCO thin film on LaAlO3 substrate by the method of pulsed laser deposition (PLD). It is systems explored that the impact on YBCO thin film of different technical parameters, such as the substrate temperature, the distance between the target and the substrate, laser pulse frequency, laser energy, deposition pressure, and the film thickness, etc. and the best film of the deposition process is found.
However, the thin film made by the method of PLD will inevitably cause some problem, for example the surface of small particles and sediment thickness of the film are also uneven. These shortcomings will seriously affect the characters of film, such as Jc, Rs, and so on. In order to improve the process of stability and yield and further lay the foundation for the application of superconductor, this paper explore the improvement of the uniformity of the film and the consistency of the double thin film. The second part introduced Tl2212 thin film by two-step Preparation. First of all, we study the growth conditions of Tl source and find the best experimental temperature. Then Films is prepared in the atmospheric pressure at the different temperature to explore the best experimental conditions.
It is analysed that the success of the film samples by XRD, SEM, etc. The result shows that the film has good C-axis oriented, good surface characteristics, the specific characters of indicators such as: Rs less than 0.5 m ?, the uniformity of the critical current density, the number of all the 106 level and above, the highest superconductor transition temperature of 108.1 k. The specific experimental results show that we can prepared the uniform double film for the measurement of microwave by the method of single temperature.
As the market potential of the microelectronics devices gradually increase, so the application of superconductor are also made new demands. In order to make Josephson junction using the method of ion implantation, and further prepared SQUID devices by the corresponding method, first we implant the film by H2+ in order to find the most appropriate dose to make a basis for the behind work.
引文
[1] H. Kamerlingh Onnes: Adad. Van Wetenshappen (Amsterdam), vol.14, pp.113, 1911
[2]黄昆,?固体物理学?,高等教育出版社,1988
[3]章立源,超导物理学,北京:电子工业出版社,1995
[4] F.London and H.London,Physica,2:341(1935)
[5] J.Bardeen,L.N.Cooper etc.Phys.Rev,137A,1745(1965)
[6] B.D.Josephson Phys.Lett.1,251(1962)
[7] M.Tinkham.Introduction to Superconductity. McGraw-Hill,Inc.
[8]章立源,超导理论,北京:科学出版社,2003
[9]张其瑞等高温超导电性,浙江大学出版社,1992
[10] J.D.Jorgensen,B.W.Veal etc.Phys.Rev.B 36(5731) 1987
[11] Bramley A P,etc.Supercond.sci.technol.,1999(12):R57-74
[12] Jergel M,Gallardo A C etc. Supercond.sci.technol.,1996(9):427-446
[13] Norton D P.Annu.Rev.Mater.Sci.1998,28:299-343
[14] D.S.ginley etal. J.cryst.growth,91,45(1988)
[15] S.S.P.Parkin etal.Phys.Rev.Lett,61,750(1988)
[16] M.A.Subramabian etal.Nature,332,420(1988)
[17] C.C.Torardi etal.Science,240,631(1988)
[18] Wu, M. K. Ahburn, J. R. C. T. Toring J. R. et al. Phys. Rev. Lett., 1987, 58: 908-911.
[19] Sheng, Z. Z., Herman, A. M. Nature, 1988, 332:138-139.
[20] Holstein, W. L. Parisi, L. A. Wilker, C. et al. Appl. Phys. Lett., 1992, 60:2014-2016.
[21] Hollmann, E. K., Venkik, O. G. Zaitsev, A. G., et al. Supercond. Sci. Technol., 1994, 7:609-622.
[22] Holstein, W. L. Parisi, L. A. Wilker, C. et al. Phys. Lett., 1992, 60:2014-2016.
[23]李宏成.高温超导薄膜及微波器件应用.物理. 1995,24:53-60
[24] C.Wilker, Z.Y.Shen, P.Pang, D.W.Face, W.L.Holstein, AL.Matthews and D.B.Laubacher. 5GH high-temperature superconductor resonators with high Q and low power dependence up to 90K. IEEE Trans.MTT., 1991, 39:1462-1467
[25] C.M.Chorey, K.S.Kong,K.B.Bhasin, J.D.Warner and T.Itoh. YBCO superconducting ring resonators at millimeter-wave frequencies. IEEE Trans.MTT., 1991, 39:1480-1487
[26] W.G.Lyons, R.R.Bonetti, A.E.Williams, P.M.Mankiewich, M.L.O`Malley, J.M.Hamm, A.C.Anderson, R.S.Withers, A.Medenberg and R.E.Howard. High-Tc superconductvemicrowave filters. IEEE Trans.Magn. Mag., 1991, 27:2537-2539
[27] G.C.Liang, R.S.Withers, B.F.Cole, S.M.Garrison, M.E.Johansson, W.S.Ruby and W.G.Lyons. High-temperature superconducting delay lines and filters on sapphire and thinned LaAlO3 substratees. IEEE Trans.Appl.Supercond., 1993, 3:3037-3041
[28] S.H.Talisa, M.A.Janocko, D.L.Meier, C.Moskowitz, R.L.Grassel, J.Talvacchio, P.Lepage, D.C.Buck,R.S.Nye, S.J.Pieseski and G.R.Wagner. High-temperature superconducting wide band delay lines. IEEE Trans.Appl.Supercond., 1995, 5:2291
[29] G.F.Dionne, D.E.Oates and D.H.Temme. IEEE MTT-S Intl.Microwave Symp.Digest., 1994, 101-103
[30] G.F.Dionne, D.E.Oates and D.H.Temme. Proceeding of 6th Joint MMM-Intermag. Conf., 1994.
[31] G.F.Dionne, D.E.Oates and D.H.Temme. TBCO/Ferrite low-loss micrwave phase shifter. IEEE Trans.Appl.Supercond., 1995, 5: 2083-2086
[32] http://geopal.uni-hd.de/XRD/xrd.gif
[33] http://www.vacgen.com/catalogue/section-16/images/sputtering_diagram.gif
[34] http://acept.la.asu.edu/PiN/rdg/elmicr/elmicr-sem.gif
[35] Roaul Weil, Marguerte Joucla, Jean Luc Loison et al Preparation of optical quality ZnCdTe thin films by vacuum evaporation[J]. Appl Opt, 1998, 37(13):2681;
[36] Sung-Tae Kin, Hyun|Ho Kim, Hyun|Il Kim et al Effect of activation of oxygen by electron cyclotron resonance plasma on the incorporation of Pb in the deposition of Pb(Zr,Ti)O-3 films by DC magnetron sputtering[J]. Jpn J Appl Phys, 1997, 36(5A)
[37] Jianzhong Shi, Kaigui Zhu, Lide Zhang Composition modulation in InxGa1-xAs nanocrystals embedded in SiO-2 film by radio frequency magnetron cosputtering[J]. Appl. Phys Lett, 1998, 72(25):3341
[38] Lee N E, Tomosch G A, Xue G et al Crystal growth and electronic properties of ultrahigh vacuum ion|beam sputter deposited Sb|doped Si(001)2×1[J] .Appl. Phys Lett, 1994, 64(11):1398
[39] Hiroshi Funakubo, Daisuke Nagano, Atsushi Saiki et al Residual strain and crystal structure of BaTiO3|SrTiO3 thin films prepared by metal organic chemical vapor deposition[J]. Jpn J Appl Phys, 1997, 36(9B):5879
[40] Gaiduk P I, Komarov F F Formation of segregated cell structure for MBE growth of mismatched semiconductors[J]. Thin Solid Films, 1997, 306:352
[41] Nishikawa Kouichi, Yamamoto Masahiko, Kingetsu Toshiki Dependence of electrical resitivity on surface topography of MBE|growth Pt film[J]. Applied Surface Science, 1997,113/114:412
[42]杨树人,丁墨元.外延生长技术[M] .北京:国防工业出版社, 1992. 278—297. YANG Shuren , DING Moyuan. Techniques of Epitaxial Growth (in Chinese) . Beijing : National Defence Industry Press , 1992.278—297.
[43]吴自勤,王兵.薄膜生长[ M] .北京:科学出版社, 2001.320—353. WU Ziqing , WANG Bing. The Growth of Film (in Chinese) .Beijing : Science Press , 2001. 320—353.
[44] Sankur H, Cheng J T Formation of dielectric and semiconductor thin films by laser|assisted evaporation[J]. Appl. Phys, 1988, A47:271
[45] Francombe M H, Krishnaswamy S V Growth and properties of piezoelectric and ferroelectric films[J] J Vac Sci Technol, 1990, A8(3):1382
[46] Narayan J, Tiwari P, Chen X et al Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition[J] .Appl Phys Lett, 1992, 61:1290
[47] Vispute R D, Talyansky V, Sharma R P et al Growth of epitaxial GaN films by pulsed laser deposition[J]. Appl Phys Lett, 1997, 71(1):102
[48]叶志镇等ZnO薄膜P型掺杂的研究进展无机材料学报18(1) 2003
[49] D.H.A.Blank, P.R.J.Ijsselsteijn, P.G.Out et.al. High Tc thin films prepared by laser ablation: material distribution and droplet problem. Mat.Sci.Eng.B., 1992, 13:67-74
[50] S.Otsubo, T.Minamikawa, Y.Yonezawa, er.al. Thermal analysis of target surface in the Ba-Y-Cu-O film preperation by laser ablation method. Jpn.J.Appl.Phys., 29:L73-L76
[51] R.K.Singh, D.Bhattacharya, J.Narayan. Surface heating effects during pulsed laser evaporation of materials. Appl.Phys.Lett., 1990, 57:2022-2024
[52] N.H.Cheung, Q.Y.Ying, J.P.Zheng et.al. Time-resolved resonant absorption study of 532nm laser-generated plumes over YBa2Cu3O7 targets. J.Appl.Phys., 1991, 69:6349-6354
[53] P.E.Dyer, R.D.Greenough, A.Issa, et.al. Spectronscopic and ion probe measurements of KrF laser ablated Ba-Y-Cu-O bulk samples. Appl.Phys.Lett., 1988, 53: 72-74
[54] T.Venkatesan, X.D.Wu, A.Inam, et.al. Nature of the pulsed laser process for the deposition of high Tc superconducting films. Appl.Phys.Lett., 1988, 53:1431-1433
[55] Q.Y.Ying, D.T.Shaw, H.S.Kwok. Spectroscopic study of the plasma-assisted deposition of Y-Ba-Cu-O. Appl.Phys.Lett., 1988, 53:1762-1764
[56] O.Eryu, K.Masuda, K.Shihoyama, et.al. Strong wavelength dependence of laser ablation fragments of superconductor YBa2Cu3O7. Jpn.J.Appl.Phys., 1992, 31:L86-L88
[57] H.Izumi, K.Ohata, T.Sawada, et.al. Direct observation of ions in laser plume onto the substrate. Appl.Phys.Lett., 1991, 59:597-599
[58] C.H.Becker, J.B.Pallix. Laser ablation of bulk YBa2Cu3O7 and cluster emission.J.Appel.Phys., 1988, 64:5152-5156
[59] H.S.Kwok. Formation of atomic beams and dynamics of in situ superconducting film growth by pulsed-laser deposition. Thin Solid Films., 1992, 218:277-290
[60] Betz J, Piehler A, Pechen E V and Renk K F. In situ preparation of high-Tc TlBaCaCuO thin film by a combination of laser ablation and thermal evaporatin. J.Appl.Phys., 1992, V71:2478-2479
[61] Piehler A, L?w R, Betz J, Sch?nberger R and Renk K F. Preparation of TlBa2Ca2Cu3O9±δhigh Tc thin films by laser ablation in combination with thermal evaporation of thallium oxide. J.Appl.Phys., 1993, V74:6437-6440
[62] Face D W and Nestlerode J P. In situ growth and properties of epitaxial TlBa2CaCu2O7 and TlBa2(Ca1-xYx)Cu2O7 thin films. IEEE Trans.Appl.Supercond., 1993, V3:1516-1519
[63] Malandrino G, Condorelli G G., FragalàI L, Miletto Granozio F, Scotti di Uccio U and Valentino M. Reproducible synthesis by metal-organic chemical vapour deposition and thallium vapour diffusion of oriented thin-films Tl1+xBa2Ca2Cu3O9+x intergrowth of Tl1Ba2Ca2Cu3O9 and Tl2Ba2Ca2Cu2O10 structures. Supercond.Sci.Technol., 1996, V9:570-577
[64] Holstein E L and Parisi L A. J.Mater.Res., 1996 , V11:1349-1352
[65] Reschauer N, Sspreitzer U,Brozio W, Piehler A and Renk K F. In situ preparation of epitaxial TlBa2Ca2Cu3O9 high-Tc thin films. Aappl.Phys.Lett., 1996, V68:1000-1002
[66] G.F.Dionne, D.E.Oates and D.H.Temme. IEEE MTT-S Intl.Microwave Symp.Digest., 1994, 101-103
[67] B.Holzapfel, B.Roas, L.Schultz, P.Bauer, et.al. Off-axis laser deposition of YBa2Cu3O7-x thin films. Appl.Phys.Lett., 1992, 61:3178-3180
[68] M.D.Strikovsky, E.B.Klyuenkov, S.V.Gapinov, J.Schubert, et.al. Crossed fluxes technique for pulsed laser deposition of smooth YBa2Cu3O7-x films and multilayers. Appl.Phys.Lett., 1993, 63:1146-1148
[69] 0 S. Huber, M. Manzel, H. Bruchlos, S. Hensen and G. Muller Physica C ,244(1995), 337.
[70] W.L. Holstein , L.A. Parisi, C. Wilker and R. B. Flippen IEEE Trans.Appl.Supercond.,3(1993), 1197.
[71] J. Chrzanowski, S. Meng-Burany, W.B. Xing, A.E. Curzon, J.C. Irwin, B. Heinrich, R.A.. Cragg, F. Habib, V. Angus, G. Anderson, A.A. Fife, Supercond. Sci. Technol., 9(1996), 113.
[72] L.G. Johansson, T. Claeson, Z. G. Ivanov, H .Olin , E. Olsson and D. Erts J. Supercond.7(1994) ,767.
[73] Q.Xiong,S.Afonso et al.,Physica C 282-287 (1997):p641
[74] A.P.Bramley,B.J.Glassey et al., IEEE Transaction on Applied Superconductivity, Vol.7, No.2(1997):p1249
[75] M.Zeisberger,M.Manzel et al., IEEE Transaction on Applied Superconductivity, Vol.9, No.2(1999):p3897
[76] J.Y.Lao, J.H.Wang et al. Supercond.Sci.Technol.13(2000):p173
[77] L.P.Guo,Z.F.Ren et al.,Physica C 277(1997):p13
[78] J.Chrzanowski,X.MBurany et al., Physica C 207(1993):p25
[79] http://www.yfms.com/stuhome/physics/new/5.htm , http://www.hoodong.com/versionview/bAAReRlFZX0NYX1kFDVZHVg**#5
[80] N. Bergeal, X. Grison, J. Lesueur, G. Faini, M. Aprilli, and J. P. Contour. High-quality planar high-Tc Josephson junctions [J]Appl. Phys. Lett,2005 ,87:102502
[81] Ke Chen,Shane A. Cybart, and R. C. Dynes. Planar thin film YBa2Cu3O7– Josephson junction pairs and arrays via nanolithography and ion damage [J] Appl. Phys. Lett, 2004,85:2863
[82] Noriaki Matsunami et al. ion irradiation effects on critical temperature of Bi2Sr2Ca2Cu3O10-x and Bi2Sr2Ca1Cu2O8-x [J]. Supercond. Sci. Technol. 1999, 12: 1143
[83] P.P.Newcomer,J.C.Barbpir,etal.Temperature dependent micro- structural modification in ion-irradiated Tl-type high temperature superconductors [J]. Physica C, 1996, 267: 243
[84] J. F. Ziegler and J. P. Biersack. The Stopping Ranges of Ions in Matter [J]. SRIM-2003, 2000:40
[85] Yijie Li, S. Linzen et al. Recovery of superconductivity and recrystallization of ion-damaged YBa2Cu3O7?x films after thermal annealing treatment [J].Physica C, 1995, 243: 294-302
[86] J.A.Martinez et al Lattice recovery of oxygen-implanted YBa2Cu3O7-x superconductor[J] Appl. Phys. Lett, 1990,57:189
[87] A.Talapatra,S K Bandyopadhyay et al. Magnetization measurements of neon ion irradiated MgB2 superconductors [J]. Supercond. Sci. Technol., 2007,20: 1193
[88] Rowell J M. The widely variable resistivity of MgB2 samples [J]. Supercond. Sci. Technol. 2003, 16: 17
[2]黄昆,?固体物理学?,高等教育出版社,1988
[3]章立源,超导物理学,北京:电子工业出版社,1995
[4] F.London and H.London,Physica,2:341(1935)
[5] J.Bardeen,L.N.Cooper etc.Phys.Rev,137A,1745(1965)
[6] B.D.Josephson Phys.Lett.1,251(1962)
[7] M.Tinkham.Introduction to Superconductity. McGraw-Hill,Inc.
[8]章立源,超导理论,北京:科学出版社,2003
[9]张其瑞等高温超导电性,浙江大学出版社,1992
[10] J.D.Jorgensen,B.W.Veal etc.Phys.Rev.B 36(5731) 1987
[11] Bramley A P,etc.Supercond.sci.technol.,1999(12):R57-74
[12] Jergel M,Gallardo A C etc. Supercond.sci.technol.,1996(9):427-446
[13] Norton D P.Annu.Rev.Mater.Sci.1998,28:299-343
[14] D.S.ginley etal. J.cryst.growth,91,45(1988)
[15] S.S.P.Parkin etal.Phys.Rev.Lett,61,750(1988)
[16] M.A.Subramabian etal.Nature,332,420(1988)
[17] C.C.Torardi etal.Science,240,631(1988)
[18] Wu, M. K. Ahburn, J. R. C. T. Toring J. R. et al. Phys. Rev. Lett., 1987, 58: 908-911.
[19] Sheng, Z. Z., Herman, A. M. Nature, 1988, 332:138-139.
[20] Holstein, W. L. Parisi, L. A. Wilker, C. et al. Appl. Phys. Lett., 1992, 60:2014-2016.
[21] Hollmann, E. K., Venkik, O. G. Zaitsev, A. G., et al. Supercond. Sci. Technol., 1994, 7:609-622.
[22] Holstein, W. L. Parisi, L. A. Wilker, C. et al. Phys. Lett., 1992, 60:2014-2016.
[23]李宏成.高温超导薄膜及微波器件应用.物理. 1995,24:53-60
[24] C.Wilker, Z.Y.Shen, P.Pang, D.W.Face, W.L.Holstein, AL.Matthews and D.B.Laubacher. 5GH high-temperature superconductor resonators with high Q and low power dependence up to 90K. IEEE Trans.MTT., 1991, 39:1462-1467
[25] C.M.Chorey, K.S.Kong,K.B.Bhasin, J.D.Warner and T.Itoh. YBCO superconducting ring resonators at millimeter-wave frequencies. IEEE Trans.MTT., 1991, 39:1480-1487
[26] W.G.Lyons, R.R.Bonetti, A.E.Williams, P.M.Mankiewich, M.L.O`Malley, J.M.Hamm, A.C.Anderson, R.S.Withers, A.Medenberg and R.E.Howard. High-Tc superconductvemicrowave filters. IEEE Trans.Magn. Mag., 1991, 27:2537-2539
[27] G.C.Liang, R.S.Withers, B.F.Cole, S.M.Garrison, M.E.Johansson, W.S.Ruby and W.G.Lyons. High-temperature superconducting delay lines and filters on sapphire and thinned LaAlO3 substratees. IEEE Trans.Appl.Supercond., 1993, 3:3037-3041
[28] S.H.Talisa, M.A.Janocko, D.L.Meier, C.Moskowitz, R.L.Grassel, J.Talvacchio, P.Lepage, D.C.Buck,R.S.Nye, S.J.Pieseski and G.R.Wagner. High-temperature superconducting wide band delay lines. IEEE Trans.Appl.Supercond., 1995, 5:2291
[29] G.F.Dionne, D.E.Oates and D.H.Temme. IEEE MTT-S Intl.Microwave Symp.Digest., 1994, 101-103
[30] G.F.Dionne, D.E.Oates and D.H.Temme. Proceeding of 6th Joint MMM-Intermag. Conf., 1994.
[31] G.F.Dionne, D.E.Oates and D.H.Temme. TBCO/Ferrite low-loss micrwave phase shifter. IEEE Trans.Appl.Supercond., 1995, 5: 2083-2086
[32] http://geopal.uni-hd.de/XRD/xrd.gif
[33] http://www.vacgen.com/catalogue/section-16/images/sputtering_diagram.gif
[34] http://acept.la.asu.edu/PiN/rdg/elmicr/elmicr-sem.gif
[35] Roaul Weil, Marguerte Joucla, Jean Luc Loison et al Preparation of optical quality ZnCdTe thin films by vacuum evaporation[J]. Appl Opt, 1998, 37(13):2681;
[36] Sung-Tae Kin, Hyun|Ho Kim, Hyun|Il Kim et al Effect of activation of oxygen by electron cyclotron resonance plasma on the incorporation of Pb in the deposition of Pb(Zr,Ti)O-3 films by DC magnetron sputtering[J]. Jpn J Appl Phys, 1997, 36(5A)
[37] Jianzhong Shi, Kaigui Zhu, Lide Zhang Composition modulation in InxGa1-xAs nanocrystals embedded in SiO-2 film by radio frequency magnetron cosputtering[J]. Appl. Phys Lett, 1998, 72(25):3341
[38] Lee N E, Tomosch G A, Xue G et al Crystal growth and electronic properties of ultrahigh vacuum ion|beam sputter deposited Sb|doped Si(001)2×1[J] .Appl. Phys Lett, 1994, 64(11):1398
[39] Hiroshi Funakubo, Daisuke Nagano, Atsushi Saiki et al Residual strain and crystal structure of BaTiO3|SrTiO3 thin films prepared by metal organic chemical vapor deposition[J]. Jpn J Appl Phys, 1997, 36(9B):5879
[40] Gaiduk P I, Komarov F F Formation of segregated cell structure for MBE growth of mismatched semiconductors[J]. Thin Solid Films, 1997, 306:352
[41] Nishikawa Kouichi, Yamamoto Masahiko, Kingetsu Toshiki Dependence of electrical resitivity on surface topography of MBE|growth Pt film[J]. Applied Surface Science, 1997,113/114:412
[42]杨树人,丁墨元.外延生长技术[M] .北京:国防工业出版社, 1992. 278—297. YANG Shuren , DING Moyuan. Techniques of Epitaxial Growth (in Chinese) . Beijing : National Defence Industry Press , 1992.278—297.
[43]吴自勤,王兵.薄膜生长[ M] .北京:科学出版社, 2001.320—353. WU Ziqing , WANG Bing. The Growth of Film (in Chinese) .Beijing : Science Press , 2001. 320—353.
[44] Sankur H, Cheng J T Formation of dielectric and semiconductor thin films by laser|assisted evaporation[J]. Appl. Phys, 1988, A47:271
[45] Francombe M H, Krishnaswamy S V Growth and properties of piezoelectric and ferroelectric films[J] J Vac Sci Technol, 1990, A8(3):1382
[46] Narayan J, Tiwari P, Chen X et al Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition[J] .Appl Phys Lett, 1992, 61:1290
[47] Vispute R D, Talyansky V, Sharma R P et al Growth of epitaxial GaN films by pulsed laser deposition[J]. Appl Phys Lett, 1997, 71(1):102
[48]叶志镇等ZnO薄膜P型掺杂的研究进展无机材料学报18(1) 2003
[49] D.H.A.Blank, P.R.J.Ijsselsteijn, P.G.Out et.al. High Tc thin films prepared by laser ablation: material distribution and droplet problem. Mat.Sci.Eng.B., 1992, 13:67-74
[50] S.Otsubo, T.Minamikawa, Y.Yonezawa, er.al. Thermal analysis of target surface in the Ba-Y-Cu-O film preperation by laser ablation method. Jpn.J.Appl.Phys., 29:L73-L76
[51] R.K.Singh, D.Bhattacharya, J.Narayan. Surface heating effects during pulsed laser evaporation of materials. Appl.Phys.Lett., 1990, 57:2022-2024
[52] N.H.Cheung, Q.Y.Ying, J.P.Zheng et.al. Time-resolved resonant absorption study of 532nm laser-generated plumes over YBa2Cu3O7 targets. J.Appl.Phys., 1991, 69:6349-6354
[53] P.E.Dyer, R.D.Greenough, A.Issa, et.al. Spectronscopic and ion probe measurements of KrF laser ablated Ba-Y-Cu-O bulk samples. Appl.Phys.Lett., 1988, 53: 72-74
[54] T.Venkatesan, X.D.Wu, A.Inam, et.al. Nature of the pulsed laser process for the deposition of high Tc superconducting films. Appl.Phys.Lett., 1988, 53:1431-1433
[55] Q.Y.Ying, D.T.Shaw, H.S.Kwok. Spectroscopic study of the plasma-assisted deposition of Y-Ba-Cu-O. Appl.Phys.Lett., 1988, 53:1762-1764
[56] O.Eryu, K.Masuda, K.Shihoyama, et.al. Strong wavelength dependence of laser ablation fragments of superconductor YBa2Cu3O7. Jpn.J.Appl.Phys., 1992, 31:L86-L88
[57] H.Izumi, K.Ohata, T.Sawada, et.al. Direct observation of ions in laser plume onto the substrate. Appl.Phys.Lett., 1991, 59:597-599
[58] C.H.Becker, J.B.Pallix. Laser ablation of bulk YBa2Cu3O7 and cluster emission.J.Appel.Phys., 1988, 64:5152-5156
[59] H.S.Kwok. Formation of atomic beams and dynamics of in situ superconducting film growth by pulsed-laser deposition. Thin Solid Films., 1992, 218:277-290
[60] Betz J, Piehler A, Pechen E V and Renk K F. In situ preparation of high-Tc TlBaCaCuO thin film by a combination of laser ablation and thermal evaporatin. J.Appl.Phys., 1992, V71:2478-2479
[61] Piehler A, L?w R, Betz J, Sch?nberger R and Renk K F. Preparation of TlBa2Ca2Cu3O9±δhigh Tc thin films by laser ablation in combination with thermal evaporation of thallium oxide. J.Appl.Phys., 1993, V74:6437-6440
[62] Face D W and Nestlerode J P. In situ growth and properties of epitaxial TlBa2CaCu2O7 and TlBa2(Ca1-xYx)Cu2O7 thin films. IEEE Trans.Appl.Supercond., 1993, V3:1516-1519
[63] Malandrino G, Condorelli G G., FragalàI L, Miletto Granozio F, Scotti di Uccio U and Valentino M. Reproducible synthesis by metal-organic chemical vapour deposition and thallium vapour diffusion of oriented thin-films Tl1+xBa2Ca2Cu3O9+x intergrowth of Tl1Ba2Ca2Cu3O9 and Tl2Ba2Ca2Cu2O10 structures. Supercond.Sci.Technol., 1996, V9:570-577
[64] Holstein E L and Parisi L A. J.Mater.Res., 1996 , V11:1349-1352
[65] Reschauer N, Sspreitzer U,Brozio W, Piehler A and Renk K F. In situ preparation of epitaxial TlBa2Ca2Cu3O9 high-Tc thin films. Aappl.Phys.Lett., 1996, V68:1000-1002
[66] G.F.Dionne, D.E.Oates and D.H.Temme. IEEE MTT-S Intl.Microwave Symp.Digest., 1994, 101-103
[67] B.Holzapfel, B.Roas, L.Schultz, P.Bauer, et.al. Off-axis laser deposition of YBa2Cu3O7-x thin films. Appl.Phys.Lett., 1992, 61:3178-3180
[68] M.D.Strikovsky, E.B.Klyuenkov, S.V.Gapinov, J.Schubert, et.al. Crossed fluxes technique for pulsed laser deposition of smooth YBa2Cu3O7-x films and multilayers. Appl.Phys.Lett., 1993, 63:1146-1148
[69] 0 S. Huber, M. Manzel, H. Bruchlos, S. Hensen and G. Muller Physica C ,244(1995), 337.
[70] W.L. Holstein , L.A. Parisi, C. Wilker and R. B. Flippen IEEE Trans.Appl.Supercond.,3(1993), 1197.
[71] J. Chrzanowski, S. Meng-Burany, W.B. Xing, A.E. Curzon, J.C. Irwin, B. Heinrich, R.A.. Cragg, F. Habib, V. Angus, G. Anderson, A.A. Fife, Supercond. Sci. Technol., 9(1996), 113.
[72] L.G. Johansson, T. Claeson, Z. G. Ivanov, H .Olin , E. Olsson and D. Erts J. Supercond.7(1994) ,767.
[73] Q.Xiong,S.Afonso et al.,Physica C 282-287 (1997):p641
[74] A.P.Bramley,B.J.Glassey et al., IEEE Transaction on Applied Superconductivity, Vol.7, No.2(1997):p1249
[75] M.Zeisberger,M.Manzel et al., IEEE Transaction on Applied Superconductivity, Vol.9, No.2(1999):p3897
[76] J.Y.Lao, J.H.Wang et al. Supercond.Sci.Technol.13(2000):p173
[77] L.P.Guo,Z.F.Ren et al.,Physica C 277(1997):p13
[78] J.Chrzanowski,X.MBurany et al., Physica C 207(1993):p25
[79] http://www.yfms.com/stuhome/physics/new/5.htm , http://www.hoodong.com/versionview/bAAReRlFZX0NYX1kFDVZHVg**#5
[80] N. Bergeal, X. Grison, J. Lesueur, G. Faini, M. Aprilli, and J. P. Contour. High-quality planar high-Tc Josephson junctions [J]Appl. Phys. Lett,2005 ,87:102502
[81] Ke Chen,Shane A. Cybart, and R. C. Dynes. Planar thin film YBa2Cu3O7– Josephson junction pairs and arrays via nanolithography and ion damage [J] Appl. Phys. Lett, 2004,85:2863
[82] Noriaki Matsunami et al. ion irradiation effects on critical temperature of Bi2Sr2Ca2Cu3O10-x and Bi2Sr2Ca1Cu2O8-x [J]. Supercond. Sci. Technol. 1999, 12: 1143
[83] P.P.Newcomer,J.C.Barbpir,etal.Temperature dependent micro- structural modification in ion-irradiated Tl-type high temperature superconductors [J]. Physica C, 1996, 267: 243
[84] J. F. Ziegler and J. P. Biersack. The Stopping Ranges of Ions in Matter [J]. SRIM-2003, 2000:40
[85] Yijie Li, S. Linzen et al. Recovery of superconductivity and recrystallization of ion-damaged YBa2Cu3O7?x films after thermal annealing treatment [J].Physica C, 1995, 243: 294-302
[86] J.A.Martinez et al Lattice recovery of oxygen-implanted YBa2Cu3O7-x superconductor[J] Appl. Phys. Lett, 1990,57:189
[87] A.Talapatra,S K Bandyopadhyay et al. Magnetization measurements of neon ion irradiated MgB2 superconductors [J]. Supercond. Sci. Technol., 2007,20: 1193
[88] Rowell J M. The widely variable resistivity of MgB2 samples [J]. Supercond. Sci. Technol. 2003, 16: 17