R80P射频宽带功率NiZn铁氧化体材料研究
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摘要
本文介绍了射频宽带高功率NiZn铁氧体材料在射频宽带功率器件中的应用及发展前景。分析了射频宽带高功率NiZn铁氧体材料在高频高功率应用情况下的损耗机理,并针对损耗机理制定了降低射频宽带高功率NiZn铁氧体材料高频损耗的方案。从材料配方和材料生产工艺两方面研究了影响射频宽带高功率NiZn铁氧体材料传输高频高功率信号效果的因素与材料的高频损耗特性之间的关系。讨论了如何根据高频弱场检测的材料参数结果来评价材料在高频高功率应用情况下的损耗。研究了应用于高频大功率场合的NiZn铁氧体功率材料的配方各成分含量和工艺因素对射频宽带高功率NiZn铁氧体材料的高频损耗和电磁参数的影响。采用NiZn缺铁配方,通过Co、V、Mn加杂等配方设计技术和高温预烧、低温烧结、预保温等工艺技术,研制出一种可应用于MHz频段的高频大功率NiZn铁氧体R80P材料,其性能水平与PHILIPS公司的4F1材料相当。
总结了降低射频宽带高功率NiZn铁氧体材料高频损耗的方法,结论如下:
1.研制射频宽带高功率NiZn铁氧体材料,采用NiZn缺铁配方,有助于降低材料的高频损耗。
2.在配方中加入适量Co2O3、V2O5可降低材料的高频损耗。
3.上述因素对材料综合性能产生的影响不一致,应寻求各组分的最佳含量,确保材料的综合性能达到最优。
4.采用适当延长球磨时间、高温预烧、低温烧结、预保温等工艺手段可降低材料的高频损耗。
5.虽然高频Q值和高频功耗密度的测量磁场不同,但两者之间存在Q值高则高频功耗密度低的关系。高频功耗密度的测量磁场更接近射频宽带高功率材料在实际应用时的工作磁场,因此,如果条件许可,应尽量测量材料的高频功耗密度,以更直观地反映材料的高频功耗大小。
In this paper, the application and preview of wide band RF high power ferrite materials are described. The mechanism of power loss of wide band RF high power ferrite materials is analyzed. Accordingly, the methods to decrease power loss of NiZn ferrite material is proposed. The relationship between the composition and processing factors and the properties of conveying high power RF signal are investigated. The methods to estimate the properties of RF wide band high power NiZn ferrite materials in high frequency high power application by Q factor measured at high frequency low magnetic field are discussed. A high power wide band NiZn ferrite material typed R80P can be applied for high power wide band ferrite component is developed .The measurement data of R80P wide band high power ferrite NiZn material is as follow.
The methods to decrease power loss of wide band high power ferrite NiZn material are outlined as follow.
Power loss of wide RF band high power NiZn ferrite material changes with the Fe amount of the composition. Less Fe amount within a range composition is suitable to get a low power loss under wide band RF high power application.
Doping Co2O3、V2O5 can decrease power loss of RF band high power NiZn ferrite material
Factors mentioned above influence property of conveying wide band RF high power signal differently. It is necessary to find the best composition and processing. Thus, the wide band RF high power ferrite material works well.
By increasing ball milling time and high temperature pre-sintering and low temperature sintering, the power loss of wide band RF high power ferrite material can be decreased.
In application to convey high frequency high power signal, the performance of wide band RF high power NiZn ferrite material is estimated by power loss factor but Q factor. Because power loss factor is measured under high magnetic field, while Q factor is under low magnetic field. The higher the Q factor is,the less the power loss density is.
总结了降低射频宽带高功率NiZn铁氧体材料高频损耗的方法,结论如下:
1.研制射频宽带高功率NiZn铁氧体材料,采用NiZn缺铁配方,有助于降低材料的高频损耗。
2.在配方中加入适量Co2O3、V2O5可降低材料的高频损耗。
3.上述因素对材料综合性能产生的影响不一致,应寻求各组分的最佳含量,确保材料的综合性能达到最优。
4.采用适当延长球磨时间、高温预烧、低温烧结、预保温等工艺手段可降低材料的高频损耗。
5.虽然高频Q值和高频功耗密度的测量磁场不同,但两者之间存在Q值高则高频功耗密度低的关系。高频功耗密度的测量磁场更接近射频宽带高功率材料在实际应用时的工作磁场,因此,如果条件许可,应尽量测量材料的高频功耗密度,以更直观地反映材料的高频功耗大小。
In this paper, the application and preview of wide band RF high power ferrite materials are described. The mechanism of power loss of wide band RF high power ferrite materials is analyzed. Accordingly, the methods to decrease power loss of NiZn ferrite material is proposed. The relationship between the composition and processing factors and the properties of conveying high power RF signal are investigated. The methods to estimate the properties of RF wide band high power NiZn ferrite materials in high frequency high power application by Q factor measured at high frequency low magnetic field are discussed. A high power wide band NiZn ferrite material typed R80P can be applied for high power wide band ferrite component is developed .The measurement data of R80P wide band high power ferrite NiZn material is as follow.
The methods to decrease power loss of wide band high power ferrite NiZn material are outlined as follow.
Power loss of wide RF band high power NiZn ferrite material changes with the Fe amount of the composition. Less Fe amount within a range composition is suitable to get a low power loss under wide band RF high power application.
Doping Co2O3、V2O5 can decrease power loss of RF band high power NiZn ferrite material
Factors mentioned above influence property of conveying wide band RF high power signal differently. It is necessary to find the best composition and processing. Thus, the wide band RF high power ferrite material works well.
By increasing ball milling time and high temperature pre-sintering and low temperature sintering, the power loss of wide band RF high power ferrite material can be decreased.
In application to convey high frequency high power signal, the performance of wide band RF high power NiZn ferrite material is estimated by power loss factor but Q factor. Because power loss factor is measured under high magnetic field, while Q factor is under low magnetic field. The higher the Q factor is,the less the power loss density is.
引文
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[9]宛德福,罗世华,等.磁性物理.北京:电子工业出版社,198,268-289
[10]铁氧体工艺教材编写组.铁氧体工艺.北京:电子工业出版社,1988
[11] Rezleseu E, et al. IEEE Trans Magn, 2000, 36(6):3962-3966
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[13] Rikukawa. .IEEE Trans Magn, 1982, 18:1535
[14]胡国光.磁性材料.合肥:安徽大学出版社, 1990: 154~159
[15]胡国光,姚学标,尹平,等.功能材料, 1995, 26(3): 248
[16]王丽,周庆国,李发伸.磁性材料及器件,2000, 31(3): 6
[17]姚志强,王琴,钟炳.磁性材料及器件,1999, 26(1):32
[18] Radic D, et al. J Magn Magn Mater, 2001, 232:1
[19] Yoshizawa Y et al..Journal of Applied Physics, 1988, 64 (10) :6044~6046
[20] Huang B Y,Yamamoto, Kaido K C,YamashiroY. .J. Magn.Magn.Mater. 2000, 209 :197-200
[21]凌志远,张庆秋,何新华.中国西部磁性材料论坛论文集, 2002, 10 :230-233
[2]刘亚丕,何时金,包大新,等.软磁铁氧体材料的发展趋势及产业化研究和开发中的几个误区.磁性材料及器件,2002,33(5):30-35
[3]陆明岳. MnZn铁氧体最新进展及发展趋势.磁性材料及器件,2001,32(5):27-33
[4]陈国华.“十一五”中国磁性材料产业发展趋势.中国电子商情:基础电子,2005,10:32-34
[5] Sugimoto M. The past, present, and future of Ferrites. J. Amer. Ceram. Soc., 1999,82(2):2- 69-280
[6]张纪纲.射频铁氧体宽带器件.北京:科学出版社,1986
[7]过璧君.磁心设计及应用.成都:电子科技大学出版社,1988
[8]张有纲,黄永杰,罗迪民,等.磁性材料.成都:成都电讯工程学院出版社,1986,139-158
[9]宛德福,罗世华,等.磁性物理.北京:电子工业出版社,198,268-289
[10]铁氧体工艺教材编写组.铁氧体工艺.北京:电子工业出版社,1988
[11] Rezleseu E, et al. IEEE Trans Magn, 2000, 36(6):3962-3966
[12] Wang S F, et al. J Magn Magn Mater, 2000,217:35-46
[13] Rikukawa. .IEEE Trans Magn, 1982, 18:1535
[14]胡国光.磁性材料.合肥:安徽大学出版社, 1990: 154~159
[15]胡国光,姚学标,尹平,等.功能材料, 1995, 26(3): 248
[16]王丽,周庆国,李发伸.磁性材料及器件,2000, 31(3): 6
[17]姚志强,王琴,钟炳.磁性材料及器件,1999, 26(1):32
[18] Radic D, et al. J Magn Magn Mater, 2001, 232:1
[19] Yoshizawa Y et al..Journal of Applied Physics, 1988, 64 (10) :6044~6046
[20] Huang B Y,Yamamoto, Kaido K C,YamashiroY. .J. Magn.Magn.Mater. 2000, 209 :197-200
[21]凌志远,张庆秋,何新华.中国西部磁性材料论坛论文集, 2002, 10 :230-233