AuSn焊料组分对半导体激光器件性能的影响
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摘要
为了提高半导体激光器件的可靠性,研究了AlN过渡热沉上AuSn焊料不同配比对半导体激光器器件性能的影响。利用MOCVD生长975nm芯片,通过对半导体激光器器件表面形貌、空洞、光谱特性、热阻特性以及寿命测试,Au组分比重低于72%的AlN过渡热沉封装器件表面颜色明显不同于组分相对较高的,空洞较多,平均波长红移约5nm,在寿命试验中过早失效,最终得出AuSn焊料中Au组分比重最好大于72%,小于80%,才能保证封装器件焊接质量,为实际生产和使用提供了指导意义。
In order to improve the reliability of semiconductor laser devices,the effect of Al N transition heat sink with different ratio Au Sn solder on the performance of semiconductor laser devices was studied. The 975 nm dies were grown using MOCVD. The surface morphology,voidicity,spectral characteristics,thermal resistance and lifetime of the semiconductor laser device were measured.Compared to the devices on the Al N transition heat sinks with more Au,the devices on the sinks with less 72% Au that the surface morphology was significantly different and the average wavelength increased about 5 nm,were prematurely lost in the life test. It was found that the Au content in the Au Sn solder should be controlled within a certain range,preferably greater than 72%,less than80%,in order to ensure the quality of packaging equipment. That became important guiding significance for the actual production and the user.
In order to improve the reliability of semiconductor laser devices,the effect of Al N transition heat sink with different ratio Au Sn solder on the performance of semiconductor laser devices was studied. The 975 nm dies were grown using MOCVD. The surface morphology,voidicity,spectral characteristics,thermal resistance and lifetime of the semiconductor laser device were measured.Compared to the devices on the Al N transition heat sinks with more Au,the devices on the sinks with less 72% Au that the surface morphology was significantly different and the average wavelength increased about 5 nm,were prematurely lost in the life test. It was found that the Au content in the Au Sn solder should be controlled within a certain range,preferably greater than 72%,less than80%,in order to ensure the quality of packaging equipment. That became important guiding significance for the actual production and the user.
引文
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[16]宋佳佳,郭德燕,邓超,等.孕育形核处理对金锡共晶合金铸态凝固组织的影响[J].稀有金属材料与工程,2013,42(4):756-760.SONG J J,GUO D Y,DENG C,et al..Effect of incubated nucleation treatment on solidification microstructure of Au-Sn eutectic alloy[J].Rare Met.Mater.Eng.,2013,42(4):756-760.(in Chinese)
[17]TAN Q B,DENG C,MAO Y,et al..Evolution of primary phases and high-temperature compressive behaviors of as-cast Au Sn20 alloys prepared by different solidification pathways[J].Gold Bull.,2011,44(1):27-35.
[2]井红旗,仲莉,倪羽茜,等.高功率密度激光二极管叠层散热结构的热分析[J].发光学报,2016,37(1):81-87.JING H Q,ZHONG L,NI Y X,et al..Thermal analysis of high power density laser diode stack cooling structure[J].Chin.J.Lumin.,2016,37(1):81-87.(in Chinese)
[3]JING H Q,ZHONG L,NI Y X,et al..Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics[J].J.Semicond.,2015,36(10):102006.
[4]SEO Y H,KANG T G,CHO Y H,et al..Locally heated low temperature wafer level MEMS packaging with closed-loop Au Sn solder-lines[C],ASME 2002 International Mechenical Engineering Congress and Exposition,New Orlean,USA,2002:17-22.
[5]CHEN M J,PHAM A V H,EVERS N A,et al..Design and development of a package using LCP for RF/microwave MEMS switches[J].IEEE Trans.on Microwave Theory Tech.,2006,54(11):4009-4015.
[6]ITOH M,SASAKI J,UDA A.Use of Au Sn solder bumps in three-dimensional passive aligned packaging of LD/PD arrays on Si optical benches[C].46th Electronic Components Technology Conference,Orlando,USA,1996:1-7.
[7]罗雁波,谢宏潮,李敏.金锡合金钎料研究现状[J].有色金属,2002,54(7):23-26.LUO Y B,XIE H C,LI M.Preparation of Au-Sn alloy for solder filler metal[J].Nonfer,Met.,2002,54(7):23-26.(in Chinese)
[8]YAMADA T,MIURA K,KAJIHARA M,et al..Kinetics of reactive diffusion between Au and Sn during annealing at solid-state temperatures[J].Mater.Sci.Eng.A,2005,390(1-2):118-126.
[9]胡洁琼,谢明,张吉明,等.Au-Sn金属间化合物的第一性原理研究[J].物理学报,2013,62(24):247102.HU J Q,XIE M,ZHANG J M,et al..First principles study of Au-Sn intermetallic compounds[J].Acta Phys.Sinica,2013,62(24):247102.(in Chinese)
[10]张威,王春青,阎勃晗.Au Sn钎料及镀层界面金属间化合物的演变[J].稀有金属材料与工程,2006,35(7):1143-1145.ZHANG W,WANG C Q,YAN B H.Evolution of intermetallic compound at the interface between Au Sn solder and metallization layer[J].Rare Met.Mater.Eng.,2006,35(7):1143-1145.(in Chinese)
[11]李良海,仝良玉,葛秋玲.Au Sn共晶焊接层空洞对陶瓷封装热阻的影响[J].电子与封装,2015,15(4):5-8.LI L H,TONG L Y,GE Q L.The influence of gold-tin eutectic-welding voids on the thermal resistance of ceramic package[J].Electron.Pack.,2015,15(4):5-8.(in Chinese)
[12]倪羽茜,井红旗,孔金霞,等.高功率半导体激光器陶瓷封装散热性能研究[J].发光学报,2016,37(5):561-566.NI Y X,JING X Q,KONG J X,et al..Thermal performance of high-power semiconductor laser packaged by ceramic submount[J].Chin.J.Lumin.,2016,37(5):561-566.(in Chinese)
[13]NI Y X,MA X Y,JING H Q,et al..Finite element analysis of expansion-matched submounts for highpower laser diodes packaging[J].J.Semicond.,2016,37(6):064005-1-5.
[14]DONG S,SHI W F,YAN B Q,et al..The research on temperature distribution of Ga N-based blue laser diode[J].Solid-State Electron.,2015,109:25-28.
[15]CIULIK J,NOTIS M R.The Au Sn phase diagram[J].J.Alloys Compd.,1993,191(1):71-78.
[16]宋佳佳,郭德燕,邓超,等.孕育形核处理对金锡共晶合金铸态凝固组织的影响[J].稀有金属材料与工程,2013,42(4):756-760.SONG J J,GUO D Y,DENG C,et al..Effect of incubated nucleation treatment on solidification microstructure of Au-Sn eutectic alloy[J].Rare Met.Mater.Eng.,2013,42(4):756-760.(in Chinese)
[17]TAN Q B,DENG C,MAO Y,et al..Evolution of primary phases and high-temperature compressive behaviors of as-cast Au Sn20 alloys prepared by different solidification pathways[J].Gold Bull.,2011,44(1):27-35.