65nm工艺SRAM低能质子单粒子翻转实验研究
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摘要
基于北京HI-13串列加速器质子源及技术改进工作,获得2~15 MeV低能质子束流。针对商业级65nm工艺4M×18bit大容量随机静态存储器(SRAM),开展了质子单粒子翻转实验研究。实验结果表明,低能质子通过直接电离机制可在存储器中引起显著的单粒子翻转,其翻转截面较核反应机制引起的翻转截面大2~3个数量级。结合实验数据分析了质子翻转机制、LET值及射程、临界电荷及空间软错误率等,分析结果表明,实验器件翻转临界电荷约为0.97fC,而低能质子超过高能质子成为质子软错误率的主要贡献因素。
Based on the Beijing HI-13 tandem accelerator proton beam source and technical improvements,2-15 MeV low energy proton beam was obtained.Single event upset(SEU)test of low energy proton was carried out on commercial 65 nm 4M×18bit large capacity SRAM.The test result shows that low energy proton can induce upset in SRAM through direct ionization mechanism,and the SEU cross section caused by this mechanism is about 2-3 magnitude order larger than that caused by nuclear reaction mechanism.With the test data,the proton upset mechanism,LET and range,critical charge,and on-orbit soft error rate(SER)were analyzed.The results show that the critical charge of the tested SRAM is about 0.97 fC and the low energy proton SER canbe a significant contribution to total proton SER in space.
Based on the Beijing HI-13 tandem accelerator proton beam source and technical improvements,2-15 MeV low energy proton beam was obtained.Single event upset(SEU)test of low energy proton was carried out on commercial 65 nm 4M×18bit large capacity SRAM.The test result shows that low energy proton can induce upset in SRAM through direct ionization mechanism,and the SEU cross section caused by this mechanism is about 2-3 magnitude order larger than that caused by nuclear reaction mechanism.With the test data,the proton upset mechanism,LET and range,critical charge,and on-orbit soft error rate(SER)were analyzed.The results show that the critical charge of the tested SRAM is about 0.97 fC and the low energy proton SER canbe a significant contribution to total proton SER in space.
引文
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[6]ZEIGLER J F.Stopping and range of ions in matter SRIM[EB/OL].[2013-07-05].http:∥www.srim.org/.
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[8]IBE E,TANIGUCHI H,YAHAGI Y,et al.Impact of scaling on neutron-induced soft error rate in SRAMs from a 250nm to a 22nm design rule[J].IEEE Trans Elec Dev,2010,57(7):1 527-1 538.
[9]TANG H H K,MURRAY C E,FIORENZA G,et al.Importance of BEOL modeling in single event effect analysis[J].IEEE Trans Nucl Sci,2007,54(6):2 162-2 167.
[10]EDMONDS L D,EDMONDS K J.A method for estimating SEU rates from protons by direct ionization[J].IEEE Trans Nucl Sci,2008,55(5):2 666-2 678.
[11]CANNON E H,CABANAS-HOLMEN M,WERT J L,et al.Heavy ion,high-energy,and low-energy proton SEE sensitivity of 90 nm RHBD SRAMs[J].IEEE Trans Nucl Sci,2010,57(6):3 493-3 499.
[2]RODBELL K P,HEIDEL D F,TANG H H K,et al.Low-energy proton-induced single-eventupsets in 65nm node,silicon-on-insulator,latches and memory cells M[J].IEEE Trans Nucl Sci,2007,54(6):2 474-2 479.
[3]HEIDEL D F,RODBELL K P,OLDIGES P,et al.Single-event-upset critical charge measurements and modeling of 65nm silicon-on-insulator latches and memory cells[J].IEEE Trans Nucl Sci,2006,53(6):3 512-3 517.
[4]SIERVAWSKI B D,PELLISH J A,REED R A,et al.Impact of low-energy proton induced upsets on test methods and rate predictions[J].IEEE Trans Nucl Sci,2009,56(6):3 085-3 092.
[5]GUO G,SHEN D,SHI S,et al.Irradiation facility and technique to increase LET for SEE testing on tandem accelerator[C]∥Radiation and Its Effects on Components and Systems Proceeding.Sevilla:IEEE,2011:724-728.
[6]ZEIGLER J F.Stopping and range of ions in matter SRIM[EB/OL].[2013-07-05].http:∥www.srim.org/.
[7]WARREN K M,WELLER R A,MENDENHALL M H,et al.The contribution of nuclear reactions to heavy ion single event upset crosssection measurements in a high-density SEU hardened SRAM[J].IEEE Trans Nucl Sci,2005,52(6):2 125-2 131.
[8]IBE E,TANIGUCHI H,YAHAGI Y,et al.Impact of scaling on neutron-induced soft error rate in SRAMs from a 250nm to a 22nm design rule[J].IEEE Trans Elec Dev,2010,57(7):1 527-1 538.
[9]TANG H H K,MURRAY C E,FIORENZA G,et al.Importance of BEOL modeling in single event effect analysis[J].IEEE Trans Nucl Sci,2007,54(6):2 162-2 167.
[10]EDMONDS L D,EDMONDS K J.A method for estimating SEU rates from protons by direct ionization[J].IEEE Trans Nucl Sci,2008,55(5):2 666-2 678.
[11]CANNON E H,CABANAS-HOLMEN M,WERT J L,et al.Heavy ion,high-energy,and low-energy proton SEE sensitivity of 90 nm RHBD SRAMs[J].IEEE Trans Nucl Sci,2010,57(6):3 493-3 499.