精确测定In_xGa_(1-x)N晶体薄膜中铟含量的卢瑟福背散射法研究
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摘要
采用金属有机化合物气相淀积法(MOCVD)在蓝宝石上生长InxGa1-xN/Ga N晶体薄膜,Ga N缓冲层的厚度为2.5μm,InxGa1-xN晶体薄膜的厚度大约800 nm,通过光致发光光谱仪测量样品发光峰的峰值,确定铟镓氮晶体薄膜中铟分布的均匀性,取样品均匀性良好的铟镓氮晶片进行卢瑟福背散射实验,每个实验室测量6个样品,两个实验室共同完成,对数据进行分多层精确拟合分析,获得外延层中的xIn,xIn值由多层拟合结果的加权平均值和定值不确定度组成。研究结果表明:采用入射离子4He,能量为2 000 ke V,散射角为165°时,铟镓氮晶片中铟含量(x=20.46%)的相对测量不确定度为2.47%,包含因子k=2。
The In_xGa_(1-x)N/Ga N crystal film was grown on sapphire substrate by metal organic chemical vapor deposition.The thickness of Ga N buffer layer is 2.5 μm,and the In_xGa_(1-x)N epitaxial layer is about 800 nm.The composition of In_xGa_(1-x)N film was determined by Rutherford backscattering spectroscopy(RBS) between two Ion beam laboratories and every laboratory measured six samples.The random spectrum datum were simulated by multilayer fitting,the results consists of the weighted average of multilayer fitting results and measurement uncertainty.when the alpha particle was used as incidence ion with 2 000 ke V energy and the scattering angle was 165°,the research results show the measurement uncertainty of RBS for the determination of In_xGa_(1-x)N(x=20.46%) is 2.47%,the coverage factor k=2.
The In_xGa_(1-x)N/Ga N crystal film was grown on sapphire substrate by metal organic chemical vapor deposition.The thickness of Ga N buffer layer is 2.5 μm,and the In_xGa_(1-x)N epitaxial layer is about 800 nm.The composition of In_xGa_(1-x)N film was determined by Rutherford backscattering spectroscopy(RBS) between two Ion beam laboratories and every laboratory measured six samples.The random spectrum datum were simulated by multilayer fitting,the results consists of the weighted average of multilayer fitting results and measurement uncertainty.when the alpha particle was used as incidence ion with 2 000 ke V energy and the scattering angle was 165°,the research results show the measurement uncertainty of RBS for the determination of In_xGa_(1-x)N(x=20.46%) is 2.47%,the coverage factor k=2.
引文
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[11]张斌,荣丽媛,李敏,等.RBS和XRD研究Fe、N共掺ZnO薄膜的制备[J].核技术,2013,36(2):9-12.
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[2]王雪松,冀子武,王绘凝,等.关于InGaN/GaN多量子阱结构内量子效率的研究[J].物理学报,2014,63(12):347-353.
[3]朱丽虹,蔡加法,李晓莹.In组分渐变提高InGaN/GaN多量子阱发光二极管性能[J].物理学报,2010,59(7):4996-5001.
[4]李国斌,陈长水,刘颂豪.In含量对InGaN/GaN LED光电性能的影响[J].发光学报,2013,34(9):1233-1238.
[5]丁志博,王琦,王坤.InGaN/GaN多量子阱的组分确定和晶格常数计算[J].物理学报,2007,56(5):2873-2876.
[6]刘运传,周燕萍,王雪蓉,等.精确测定AlGaN薄膜中氯含量的电子探针波谱法研究[J].光学学报,2013,33(6):344-348.
[7]王洪桂,陶丽萍,胡兰基.微博消解-电感耦合等离子体质谱法(ICP-MS)测定锌精矿中的铟和锗[J].中国无机分析化学,2013,5(1):38-40.
[8]常天海.磁控溅射陶瓷靶制备氧化铟锡薄膜的XPS和AFM研究[J].真空与低温,2003,9(2):98-101.
[9]刘卓超.分析薄膜厚度与成分的卢瑟福背散射技术[J].理化检验(物理分册),2010,46(7):436-440.
[10]刘运传,周燕萍,王雪蓉,等.AlGaN晶体薄膜中铝含量的卢瑟福背散射精确测定[J].物理学报,2013,62(16):78-82.
[11]张斌,荣丽媛,李敏,等.RBS和XRD研究Fe、N共掺ZnO薄膜的制备[J].核技术,2013,36(2):9-12.
[12]王欢,姚淑德,潘尧波,等.用卢瑟福/沟道技术及高分辨X射线衍射技术分析不同Al和In含量的AlInGaN薄膜的应变[J].物理学报,2007,56(6):3350-3354.