硅基异质结太阳电池新进展
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  • 英文篇名:New Development of Silicon Heterojunction Solar Cells
  • 作者:李正平 ; 杨黎飞 ; 沈文忠
  • 英文作者:Li Zheng-Ping;Yang Li-Fei;Shen Wen-Zhong;Institute of Solar Energy, and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education),School of Physics and Astronomy, Shanghai Jiao Tong University;GCL System Integration Technology Co., Ltd.;Collaborative Innovation Center of Advanced Microstructures;
  • 关键词:异质结 ; 太阳电池 ; 背面结技术 ; 载流子选择性钝化接触技术 ; 叉指式背接触 ; 钙钛矿/硅异质结两端叠层太阳电池
  • 英文关键词:Heterojunction;;Silicon solar cells;;Back junction;;Carrier selective passivating contacts;;Interdigitated back contact;;Perovskite/SHJ two terminals tandem solar cells
  • 中文刊名:WLXJ
  • 英文刊名:Progress in Physics
  • 机构:上海交通大学物理与天文学院人工结构及量子调控教育部重点实验室太阳能研究所;协鑫集成科技股份有限公司;教育部人工微结构协同创新中心;
  • 出版日期:2019-02-20
  • 出版单位:物理学进展
  • 年:2019
  • 期:v.39
  • 基金:国家自然科学基金(11834011、11674225、11474201);; 上海市科技创新行动计划项目(17DZ1201103)的资助
  • 语种:中文;
  • 页:WLXJ201901001
  • 页数:22
  • CN:01
  • ISSN:32-1127/O4
  • 分类号:4-25
摘要
非晶硅/晶体硅异质结太阳电池(SHJ)是在晶体硅上沉积非晶硅薄膜,它综合了晶体硅电池与薄膜电池的优势,具有结构简单、工艺温度低、钝化效果好、开路电压高、温度特性好、双面发电等优点,是高转换效率硅基太阳电池的热点方向之一。本文首先综述了近几年SHJ电池制造工艺技术的进步,包括臭氧清洗硅片、热丝化学气相沉积技术沉积非晶硅薄膜、透明导电薄膜沉积方法和材料的改进,以及新型金属化电极技术在SHJ电池中的应用所取得的进展。然后介绍了结合背面结技术、载流子选择性钝化接触技术的硅异质结电池以及薄型硅异质结太阳电池最新研究情况。进一步分析了与叉指式背接触技术相结合的硅异质结电池、与钙钛矿太阳电池技术相结合的钙钛矿/硅异质结两端叠层太阳电池的研究现状,指出硅基异质结太阳电池是迈向更高效率太阳电池的基石。
        Silicon heterojunction(SHJ) solar cells are featured by depositing amorphous silicon(a-Si:H) thin films on the crystalline silicon(c-Si) wafers, which integrate the advantages of c-Si and a-Si:H solar cells such as simple cell structure, low process temperature, good passivation, high open-circuit voltages, low temperature coefficient, and bifacial characteristics. Therefore, SHJ solar cell is a researching/developing focus for achieving high efficiency c-Si solar cells in recent years. In the present review paper, we firstly summarize the new processes development of fabricating SHJ solar cells, which including the cleaning of wafers by ozone(O3), the deposition of a-Si:H thin films by hot wires chemical vapor deposition(HWCVD), the novel deposition method of transparent conducting oxides(TCO) films and improvement in TCO materials, and the application of new methods for metallization. Then the advanced technologies such as back junction and carrier selective passivating contacts, which are combined with SHJ solar cells, are introduced in this paper,together with the progress of thin SHJ solar cells. Further, the state-of-the-art interdigitated back contact SHJ(IBC-SHJ) and perovskite/SHJ two terminals tandem solar cells are analyzed, which show that the SHJ solar cell is the footstone for higher efficiency silicon-based solar cells.
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