应用于便携式ECG的低耗能高精度带隙基准电路设计
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摘要
为满足便携心电监测设备中低功耗的应用要求,设计一种应用于便携式心电监测芯片的具有低功耗和高精度特性的带隙基准电路。通过采用工作于亚阈值区域的CMOS晶体管,电路取得了超低功耗。并采用高阶温度曲线补偿技术,提高了电路输出基准电压的精准度。电路采用标准CMOS 180 nm工艺设计,仿真结果表明,在-40～100℃的温度范围内输出基准电压为1.16 V,温度系数约为3.3 ppm/℃,在1.3 V电源电压下功耗为6.2μW。
A low-power consumption and high-precision bandgap reference circuit applicable for the ECG monitoring chip is designed to meet the low-power consumption application requirement of the portable ECG monitoring device. The ultra-low-power consumption is achieved for the circuit by adopting the CMOS transistor working in the sub-threshold region. The high-order temperature curve compensation technique is adopted to improve the accuracy of the reference voltage output by the circuit. The standard CMOS 180 nm process design is adopted for the circuit. The simulation results show that the output reference voltage is1.16 V and the temperature coefficient is about 3.3 ppm/°C in the temperature range of-40～100 °C,and the power consumption of the circuit is 6.2 μW at the power supply voltage of 1.3 V.
A low-power consumption and high-precision bandgap reference circuit applicable for the ECG monitoring chip is designed to meet the low-power consumption application requirement of the portable ECG monitoring device. The ultra-low-power consumption is achieved for the circuit by adopting the CMOS transistor working in the sub-threshold region. The high-order temperature curve compensation technique is adopted to improve the accuracy of the reference voltage output by the circuit. The standard CMOS 180 nm process design is adopted for the circuit. The simulation results show that the output reference voltage is1.16 V and the temperature coefficient is about 3.3 ppm/°C in the temperature range of-40～100 °C,and the power consumption of the circuit is 6.2 μW at the power supply voltage of 1.3 V.
引文
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[3]张献中,张涛.一种三阶曲率补偿带隙基准电压源的设计[J].武汉科技大学学报,2015,38(1):67-71.ZHANG Xianzhong,ZHANG Tao. A bandgap voltage reference with third-order curvature compensation[J]. Journal of Wuhan University of Science and Technology,2015,38(1):67-71.
[4]毕查德·拉扎维.模拟CMOS集成电路设计[M].北京:清华大学出版社,2004.RAZAVI B. Design of analog CMOS integrated circuit[M]. Beijing:Tsinghua University Press,2004.
[5]杨宁,史仪凯,袁小庆,等.高精度、低功耗带隙基准源及其电流源设计[J].传感技术学报,2014,27(1):58-63.YANG Ning,SHI Yikai,YUAN Xiaoqing,et al. Design of high precision bandgap reference and current reference with low power consumption[J]. Chinese journal of sensors and actuators,2014,27(1):58-63.
[6]王宇奇,何进,张贵博,等.BiCMOS带隙基准电压源的设计及应用[J].电子技术应用,2016,42(11):33-36.WANG Yuqi,HE Jin,ZHANG Guibo,et al. Design and application of BiCMOS band-gap reference source[J]. Application of electronic technique,2016,42(11):33-36.
[7] DUAN Q,ROH J. A 1.2 V 4.2 ppm/℃high-order curvaturecompensated CMOS bandgap reference[J]. IEEE transactions on circuits and systems I:regulator papers,2015,62(3):662-670.
[8]张博亮.一种基于LDO稳压器的带隙基准电压源设计[J].电子设计工程,2015,23(24):64-66.ZHANG Boliang. Design of a bandgap reference for LDOs[J].Electronic design engineering,2015,23(24):64-66.
[9]邢小明,李建成,郑礼辉.一种低功耗亚阈值CMOS带隙基准电压源[J].微电子学与计算机,2015,32(10):151-154.XING Xiaoming,LI Jiancheng,ZHENG Lihui. A low-power bandgap voltage reference based on subthreshold CMOS[J]. Microelectronics&computer,2015,32(10):151-154.
[10] MA Y,TIAN W J,FAN Y Y. Improved quantum ant colony algorithm for solving TSP problem[C]//Proceedings of IEEE Workshop on Electronics,Computer and Applications. Ottawa:IEEE,2014:453-456.
[11]郭振义,林长龙,刘畅,等.一种基于BICMOS工艺的低温度系数带隙基准电压源[J].南开大学学报(自然科学版),2016,49(5):25-28.GUO Zhenyi,LIN Changlong,LIU Chang,et al. A low temperature coefficient bandgap reference voltage source based on BICMOS process[J]. Acta Scientiarum Naturalium Universitatis Nankaiensis,2016,49(5):25-28.
[12]曾衍瀚,黄毅荣,李毓鳌,等.超低功耗亚阈值CMOS电压基准电路[J].微电子学,2014,44(3):301-304.ZENG Yanhan,HUANG Yirong,LI Yu’ao,et al. Ultra-lowpower sub-threshold CMOS voltage reference circuit[J]. Microelectronics,2014,44(3):301-304.