基于5G通信的硅基IPD滤波器设计与仿真
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摘要
集成无源器件(IPD)因其集成度高而被广泛应用于系统级封装(SIP)和现代无线通信系统中.同时为达到系统设计中低功耗、低成本和小型化的要求,本文设计了基于5G通信的IPD滤波器.利用电子设计自动化软件(ADS)设计滤波器原理图,并结合全波仿真工具(HFSS)对电容、电感、互感以及整体滤波器结构进行仿真.系统仿真结果表明,滤波器在3.4～3.6 GHz带宽内损耗为1.08 dB,带外抑制达到-30 dB.
Thin integrated passive devices(IPD) are widely used in System in Package(SIP) and modern wireless communication systems because of their high integration. At the same time, in order to achieve the requirements of low power consumption, low cost and small and medium size, this paper designs a IPD filter based on 5 G communication.The electronic design automation software(ADS) is used to design the filter schematic diagram, and the full wave simulation tool(HFSS) is used to simulate the structure of capacitance, inductance, mutual inductance and overall filter.The simulation results show that the insertion lossof pass-band is 1.08 dB and the insertion loss of out-band is 30 dB.
Thin integrated passive devices(IPD) are widely used in System in Package(SIP) and modern wireless communication systems because of their high integration. At the same time, in order to achieve the requirements of low power consumption, low cost and small and medium size, this paper designs a IPD filter based on 5 G communication.The electronic design automation software(ADS) is used to design the filter schematic diagram, and the full wave simulation tool(HFSS) is used to simulate the structure of capacitance, inductance, mutual inductance and overall filter.The simulation results show that the insertion lossof pass-band is 1.08 dB and the insertion loss of out-band is 30 dB.
引文
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[2] YEUNG L K,WU K L.A compact second-order LTCC bandpass filter with two finite transmission zeros[J].Microwave Theory and Techniques,IEEE Transactions on,2003,51(2):337-341.
[3] SUBRAMANIAM K,KORDESCH A,ESA M.Nine-element lumped metal-insulator-metal (MIM) capacitor model for RF applications[C]//Electronics Manufacturing and Technology,31st International Conference on.Shenzhen,China,2007:425-430.
[4] 李轶楠.硅基集成无源滤波器的设计与制作 [D].大连:大连理工大学,2013.
[5] YUE C P,WONG S S.Physical modeling of spiral inductors on silicon[J].Electron Devices,IEEE Transactions on,2000,47(3):560-568.
[6] 苏华伟,林来存,李君,等.基于高Q值玻璃槽电感的优化与验证[J].电子设计工程,2017,25(16):6-10.
[7] PAN J,WANG H J,TIAN G X,et al.Design of a compact silicon-based integrated passive band-pass filter with two tunable finite transmissionzeros[J].Microelectronics Journal,2016(49):43-48.