多参量微纳集成传感器
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摘要
为了满足采煤机械工作状态在线监测在线分析系统对微纳传感系统小型化和集成化的要求,设计了一种将压阻式振动传感器与铂电阻温度传感器集成的多参量微纳集成传感器。振动传感器由一个惯性质量块、八个梁和边框组成,惯性质量块通过八个梁悬挂在边框上。为了减小集成传感器的面积,铂电阻温度传感器的形状为"蛇"形。对所设计的多参量微纳传感器进行了流片加工和性能测试,铂电阻温度传感器的灵敏度为1.04 mV/℃,量程为-20～80℃,振动传感器的灵敏度为49.89 mV/g,灵敏度幅值线性度为-0.33%,量程为50g。实验结果表明,研制的多参量微纳集成传感器满足对振动和温度信号测量的需求。
A multi-parameter micro/nano sensor integrating the piezo-resistive vibration sensor with the platinum resistance temperature sensor was designed to satisfy the demand of the miniaturization and integration of the micro/nano sensor system for the on-line monitoring and analysis system of the working state of the mining machinery.The vibration sensor consists of a proofmass,eight beams and a frame.The proof-mass was suspended on the frame through eight beams.For the sake of reducing the area of the integrated sensor,the shape of the platinum resistance temperature sensor was designed as a "snake".The designed multi-parameter micro/nano sensor was fabricated,and the performances of the sensor were tested.The sensitivity of the platinum resistance temperature sensor is 1.04 mV/℃in the test range of-20-80℃.The sensitivity,sensitivity amplitude linearity and test range of the vibration sensor are 49.89 mV/g,-0.33% and50 g,respectively.The test results show that the developed multi-parameter micro/nano integrated sensor can meet the demand of the vibration and temperature signal test.
A multi-parameter micro/nano sensor integrating the piezo-resistive vibration sensor with the platinum resistance temperature sensor was designed to satisfy the demand of the miniaturization and integration of the micro/nano sensor system for the on-line monitoring and analysis system of the working state of the mining machinery.The vibration sensor consists of a proofmass,eight beams and a frame.The proof-mass was suspended on the frame through eight beams.For the sake of reducing the area of the integrated sensor,the shape of the platinum resistance temperature sensor was designed as a "snake".The designed multi-parameter micro/nano sensor was fabricated,and the performances of the sensor were tested.The sensitivity of the platinum resistance temperature sensor is 1.04 mV/℃in the test range of-20-80℃.The sensitivity,sensitivity amplitude linearity and test range of the vibration sensor are 49.89 mV/g,-0.33% and50 g,respectively.The test results show that the developed multi-parameter micro/nano integrated sensor can meet the demand of the vibration and temperature signal test.
引文
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[2] HUMBERT A,TUERLINGS B J,HOOFMAN R J O M,et al.A low-power CMOS integrated sensor for CO2detection in the percentage range[C]//Proceedings of the 17th International Conference on Solid-State Sensors,Actuators and Microsystems.Barcelona,Spain,2013:1649-1652.
[3] KLEE M,van HEESCH C M,DIRKSEN P,et al.Device with integrated ultrasound transducers and flow sensor:USA,US20120123270A1[P].2010-07-26.
[4]彭韶华,黄庆安,秦明,等.CMOS工艺兼容的温湿度传感器[J].半导体学报,2005,26(7):1428-1433.
[5]郑国光,方华斌,孙艳美.光学芯片与惯性传感器的集成装置:中国,CN205294830 U[P].2016-01-04.
[6]赵彬.煤矿机械的故障诊断技术和维修方式的探讨[J].机械管理开发,2016(12):44-45.
[7]郑健文.输煤设备在运行中温度和振动的典型工况标准是什么?(2015-04-03)[2018-09-18].http://www.xuzhi.net/d25/120615.html.
[8] TAN T D,ANH N T.Three-axis piezoresistive accelerometer with uniform axial sensitivities[C]//Proceedings of the International Conference on Intelligent Systems,Modelling and Simulation.Shanghai,China,2011:1-7.
[9] SANKAR A R,DAS S,LAHIRI S K.Cross-axis sensitivity reduction of a silicon MEMS piezoresistive accelerometer[J].2009,15(4):511-518.
[10] HARI K,VERMA S K,KRISHNA I R P,et al.Out-ofplane dual flexure MEMS piezoresistive accelerometer with low cross axis sensitivity[J].Microsystem Technologies,2017,24(5):2437–2444.
[11] LIU F,GAO S,NIU S,et al.Optimal design of high-g MEMS piezoresistive accelerometer based on Timoshenko beam theory[J].Microsystem Technologies,2018,24(2):855-867.
[12]IFTYREK E,SABOLSKY K,SABOLSKY E M.Platinum thin film electrodes for high-temperature chemical sensor applications[J].Sensors&Actuators:B,2013,181(3):702-714.
[13] KIM J,KIM J,SHIN Y,et al.A study on the fabrication of an RTD(resistance temperature detector)by using Pt thin film[J].Korean Journal of Chemical Engineering,2001,18(1):61-66.