钙钛矿太阳电池器件光电性能数值仿真
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摘要
钙钛矿太阳电池以其较高的光电转化效率受到业界关注。本文基于数值仿真技术,获得了CH_3NH_3PbI_3钙钛矿太阳电池器件的光电性能。结果表明:器件的实验吸收谱与太阳辐射谱较为匹配,且第一性原理计算得到CH_3NH_3PbI_3晶体具有带隙约为1.6e V的直接带隙半导体结构,这为实现高效光吸收进而发生电子跃迁提供了基础。基于wx AMPS系统的计算结果,发现电池器件的光电转化效率达到15%以上,器件中TiO_2致密层和Spiro-MeOTAD层因其能级与CH_3NH_3PbI_3吸收层的匹配作用而实现电子和空穴的分离。随吸收层厚度增加,CH_3NH_3PbI_3吸收层内可产生更多的光电子参与后续光电转化,导致器件短路电流Jsc增大。
Perovskite-based solar cell device has drawn the interestsof the new energy industry due to its high photoelectric conversion efficiency. In this article, the photoelectric characteristic of CH_3NH_3PbI_3 perovskite-based solar cell device has been numerically simulated. Results show that the experimental absorption spectrum is accord to the standard sun radiation spectrum, and the CH_3NH_3PbI_3 crystal is found to be direct-gap semiconductor based on the first principle calculation, with its energy gap of about 1.6 e V. Such crystal property is the basis to realize high photoelectric conversion. Calculated through wx AMPS simulation system, the CH_3NH_3PbI_3 perovskite-based solar cell device presents efficiency above 15%, and the TiO2 and Spiro-Me OTAD layer have effectively separated the electrons and holes in the CH and Spiro-Me D layer have effectively separated the electrons and holes in the CH_3NH_3PbI_3 perovskite layer due to the matching energy structures among the three layers.Whenperovskite layer thickness increasing, more photoelectrons are generated in the conduction band of CH_3NH_3PbI_3 crystals, and the short-circuit current J, and the short-circuit current Jsc of the device are f the device are accordingly grown up.
Perovskite-based solar cell device has drawn the interestsof the new energy industry due to its high photoelectric conversion efficiency. In this article, the photoelectric characteristic of CH_3NH_3PbI_3 perovskite-based solar cell device has been numerically simulated. Results show that the experimental absorption spectrum is accord to the standard sun radiation spectrum, and the CH_3NH_3PbI_3 crystal is found to be direct-gap semiconductor based on the first principle calculation, with its energy gap of about 1.6 e V. Such crystal property is the basis to realize high photoelectric conversion. Calculated through wx AMPS simulation system, the CH_3NH_3PbI_3 perovskite-based solar cell device presents efficiency above 15%, and the TiO2 and Spiro-Me OTAD layer have effectively separated the electrons and holes in the CH and Spiro-Me D layer have effectively separated the electrons and holes in the CH_3NH_3PbI_3 perovskite layer due to the matching energy structures among the three layers.Whenperovskite layer thickness increasing, more photoelectrons are generated in the conduction band of CH_3NH_3PbI_3 crystals, and the short-circuit current J, and the short-circuit current Jsc of the device are f the device are accordingly grown up.
引文
[1]邓昌凯,张雨莲,李东栋,鲁林峰,任伟,陈小源.薄晶硅太阳电池的研究进展[J].电子元件与材料,2016,35(06):16-22.
[2]邵珠峰,杨秀娟,陆晓东,钟敏.飞秒激光刻蚀增强非晶硅薄膜太阳电池性能的研究[J].半导体技术,2017,42(08):608-614.
[3]刘雨生,刘雯,张淑媛,杨富华,王晓东.陷光结构在GaA s薄膜太阳电池中的应用[J].材料导报,2017,31(11):11-19.
[4]王奡,南琳,张磊,程晓鼎,何茂伟,王驰远.喷墨打印太阳电池栅线的成型实验研究[J].太阳能学报,2017,38(02):328-332.
[5]张鹤,张晓丹,赵颖.多结硅基薄膜太阳电池的带隙匹配[J].太阳能学报,2013,34(04):621-627.
[6]韩安军.超薄CIGS太阳电池及组件的研究[D].南开大学,2013.
[7]刘浩,薛玉明,乔在祥,李微,张超,尹富红,冯少君.铜锌锡硫薄膜材料及其器件应用研究进展[J].物理学报,2015,64(06):22-33.
[8]姚鑫,丁艳丽,张晓丹,赵颖.钙钛矿太阳电池综述[J].物理学报,2015,64(03):145-152.
[9]Yiming Liu,Yun Sun and Angus Rockett.A new simulation software of solar cells-wxA MPS.Solar Energy Materials&Solar Cells.2012,98(1):124-128.
[2]邵珠峰,杨秀娟,陆晓东,钟敏.飞秒激光刻蚀增强非晶硅薄膜太阳电池性能的研究[J].半导体技术,2017,42(08):608-614.
[3]刘雨生,刘雯,张淑媛,杨富华,王晓东.陷光结构在GaA s薄膜太阳电池中的应用[J].材料导报,2017,31(11):11-19.
[4]王奡,南琳,张磊,程晓鼎,何茂伟,王驰远.喷墨打印太阳电池栅线的成型实验研究[J].太阳能学报,2017,38(02):328-332.
[5]张鹤,张晓丹,赵颖.多结硅基薄膜太阳电池的带隙匹配[J].太阳能学报,2013,34(04):621-627.
[6]韩安军.超薄CIGS太阳电池及组件的研究[D].南开大学,2013.
[7]刘浩,薛玉明,乔在祥,李微,张超,尹富红,冯少君.铜锌锡硫薄膜材料及其器件应用研究进展[J].物理学报,2015,64(06):22-33.
[8]姚鑫,丁艳丽,张晓丹,赵颖.钙钛矿太阳电池综述[J].物理学报,2015,64(03):145-152.
[9]Yiming Liu,Yun Sun and Angus Rockett.A new simulation software of solar cells-wxA MPS.Solar Energy Materials&Solar Cells.2012,98(1):124-128.