Ca_3Mn_2O_7薄膜的脉冲激光法制备及其电学性质
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摘要
为了验证Ca_3Mn_2O_7薄膜铁电性的存在,采用脉冲激光沉积法制备了Ca_3Mn_2O_7薄膜,分别利用X线衍射仪、原子力显微镜(AFM)、扫描电子显微镜(SEM)和压电力显微镜(PFM)对不同压强下制备所得样品进行结构表征、表面形貌表征和电学性质分析.分析结果表明:30 Pa的氧气压最有利于较高质量薄膜的生长.利用PFM对其进行电学性质测试,实现了点状区域铁电畴相位回线和振幅"蝴蝶"曲线的表征以及面状区域内外加电场调控铁电极化方向的改变,验证了理论预测的CMO中铁电性的存在.
In order to study the ferroelectricity of Ca_3Mn_2O_7 thin films,Ca_3Mn_2O_7 thin films were deposited with various oxygen pressure by pulsed laser deposition. Structure,morphology and electrical properties of the samples with different oxygen pressures were characterized by X-ray diffractometry,atomic force microscopy(AFM)and scanning electron microscopy(SEM)and piezoelectric force microscopy(PFM). The results show that the pressure of 30 Pa is most favorable condition for the deposition of higher quality films. The saturated phase hysteresis loop and the"butterfly"shaped amplitude curves were successfully obtained with PFM,as well as the modulation of ferro-electric domain direction via external biased voltage,which proved the theoretical prediction of the exist of ferroelectricity in the CMO.
In order to study the ferroelectricity of Ca_3Mn_2O_7 thin films,Ca_3Mn_2O_7 thin films were deposited with various oxygen pressure by pulsed laser deposition. Structure,morphology and electrical properties of the samples with different oxygen pressures were characterized by X-ray diffractometry,atomic force microscopy(AFM)and scanning electron microscopy(SEM)and piezoelectric force microscopy(PFM). The results show that the pressure of 30 Pa is most favorable condition for the deposition of higher quality films. The saturated phase hysteresis loop and the"butterfly"shaped amplitude curves were successfully obtained with PFM,as well as the modulation of ferro-electric domain direction via external biased voltage,which proved the theoretical prediction of the exist of ferroelectricity in the CMO.
引文
[1]KEITSIRO A.Possible species of cerromagnetic,ferroelectric,and ferroelastic crystals[J].Physical Review B Condensed Matter,1970,2(3):754-772.
[2]EERENSTEIN W,MATHUR N D,SCOTT J F.Multiferroic and magnetoelectric materials[J].Cheminform,2010,37(44):759-765.
[3]CHEONG S W,MOSTOVOY M.Multiferroics:A magnetic twist for ferroelectricity[J].Nature Materials,2007,6(1):13-20.
[4]SINGH A,PANDEY V,KOTNALA R K,et al.Direct evidence for multiferroic magnetoelectric coupling in 0.9BiFeO3-0.1BaTiO3[J].Physical Review Letters,2009,101(24):247602.
[5]CATALAN G,SCOTT J F.Physics and applications of bismuth ferrite[J].Advanced Materials,2010,21(25/26):2463-2485.
[6]RUDDLESDEN S N,POPPER P.The compound Sr3Ti2O7and its structure[J].Acta Crystallographica,1958,1(1):54-55.
[7]HILL N A.First principles study of multiferroic magnetoelectric manganites[J].AIP Conference Proceedings,2000,535(1):372-382.
[8]BENEDEK N A,FENNIE C J.Hybrid improper ferroelectricity:A mechanism for controllable polarization-magnetization coupling[J].Physical Review Letters,2011,106(10):107204.
[9]LI X,YANG L,LI C,et al.Ultra-low coercive field of improper ferroelectric Ca3Ti2O7epitaxial thin films[J].Applied Physics Letters,2017,110(4):42901.
[10]BENEDEK N A,MULDER A T,FENNIE C J.Polar octahedral rotations:A path to new multifunctional materials[J].Journal of Solid State Chemistry,2015,43(47):11-20.
[11]赵庆勋,张靖,辛红丽,等.EACVD低温合成金刚石薄膜中非线性电场的数值模拟[J].计算物理,2016,20(5):399-402.ZHAO Q X,ZHANG J,XING H L,et al.Numerical simulation of nonlinear electric field in EACVD low temperature synthetic diamond films[J].Computing Physics,2003,20(5):399-402(in Chinese).
[12]YI M.氧空位缺陷对PbTiO3铁电薄膜漏电流的调控[J].物理学报,2018,67(18):284-289.YI M.Control of leakage current of PbTiO3ferroelectric thin films by oxygen vacancy defects[J].Acta Physica Sinica,2018,67(18):284-289(in Chinese).
[13]WANG S Y,LIU W F,GAO J,et al.Resistive switching and threshold switching behaviors in La0.1Bi0.9Fe1-xCoxO3ceramics[J].Journal of Applied Physics,2012,112(3):034110.
[14]HAMBE M,PETRARU A,PERTSEV N A,et al.Crossing an interface:Ferroelectric control of tunnel currents in magnetic complex oxide heterostructures[J].Advanced Functional Materials,2010,20(15):2436-2441.
[15]PARK K I,XU S,LIU Y,et al.Piezoelectric BaTiO3thin film nanogenerator on plastic substrates[J].Nano Letters,2010,10(12):4939-4943.
[16]TAYLOR D V,DAMJANOVIC D.Domain wall pinning contribution to the nonlinear dielectric permittivity in Pb(Zr,Ti)O3thin films[J].Applied Physics Letters,1998,73(14):2045-2047.
[17]JI W,YAO K,LIANG Y C.Evidence of bulk photovoltaic effect and large tensor coefficient in ferroelectric BiFeO3thin films[J].Physical Review B Condensed Matter,2011,84(84):3589-3594.
[18]GRUVERMAN A,WU D,LU H,et al.Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale[J].Nano Letters,2009,9(10):3539-3543.
[2]EERENSTEIN W,MATHUR N D,SCOTT J F.Multiferroic and magnetoelectric materials[J].Cheminform,2010,37(44):759-765.
[3]CHEONG S W,MOSTOVOY M.Multiferroics:A magnetic twist for ferroelectricity[J].Nature Materials,2007,6(1):13-20.
[4]SINGH A,PANDEY V,KOTNALA R K,et al.Direct evidence for multiferroic magnetoelectric coupling in 0.9BiFeO3-0.1BaTiO3[J].Physical Review Letters,2009,101(24):247602.
[5]CATALAN G,SCOTT J F.Physics and applications of bismuth ferrite[J].Advanced Materials,2010,21(25/26):2463-2485.
[6]RUDDLESDEN S N,POPPER P.The compound Sr3Ti2O7and its structure[J].Acta Crystallographica,1958,1(1):54-55.
[7]HILL N A.First principles study of multiferroic magnetoelectric manganites[J].AIP Conference Proceedings,2000,535(1):372-382.
[8]BENEDEK N A,FENNIE C J.Hybrid improper ferroelectricity:A mechanism for controllable polarization-magnetization coupling[J].Physical Review Letters,2011,106(10):107204.
[9]LI X,YANG L,LI C,et al.Ultra-low coercive field of improper ferroelectric Ca3Ti2O7epitaxial thin films[J].Applied Physics Letters,2017,110(4):42901.
[10]BENEDEK N A,MULDER A T,FENNIE C J.Polar octahedral rotations:A path to new multifunctional materials[J].Journal of Solid State Chemistry,2015,43(47):11-20.
[11]赵庆勋,张靖,辛红丽,等.EACVD低温合成金刚石薄膜中非线性电场的数值模拟[J].计算物理,2016,20(5):399-402.ZHAO Q X,ZHANG J,XING H L,et al.Numerical simulation of nonlinear electric field in EACVD low temperature synthetic diamond films[J].Computing Physics,2003,20(5):399-402(in Chinese).
[12]YI M.氧空位缺陷对PbTiO3铁电薄膜漏电流的调控[J].物理学报,2018,67(18):284-289.YI M.Control of leakage current of PbTiO3ferroelectric thin films by oxygen vacancy defects[J].Acta Physica Sinica,2018,67(18):284-289(in Chinese).
[13]WANG S Y,LIU W F,GAO J,et al.Resistive switching and threshold switching behaviors in La0.1Bi0.9Fe1-xCoxO3ceramics[J].Journal of Applied Physics,2012,112(3):034110.
[14]HAMBE M,PETRARU A,PERTSEV N A,et al.Crossing an interface:Ferroelectric control of tunnel currents in magnetic complex oxide heterostructures[J].Advanced Functional Materials,2010,20(15):2436-2441.
[15]PARK K I,XU S,LIU Y,et al.Piezoelectric BaTiO3thin film nanogenerator on plastic substrates[J].Nano Letters,2010,10(12):4939-4943.
[16]TAYLOR D V,DAMJANOVIC D.Domain wall pinning contribution to the nonlinear dielectric permittivity in Pb(Zr,Ti)O3thin films[J].Applied Physics Letters,1998,73(14):2045-2047.
[17]JI W,YAO K,LIANG Y C.Evidence of bulk photovoltaic effect and large tensor coefficient in ferroelectric BiFeO3thin films[J].Physical Review B Condensed Matter,2011,84(84):3589-3594.
[18]GRUVERMAN A,WU D,LU H,et al.Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale[J].Nano Letters,2009,9(10):3539-3543.