具有新型缓冲层的IGBT特性研究
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摘要
为了降低低压场终止型IGBT的工艺难度并改善其关断特性,对注氢场终止型IGBT(PFS-IGBT)的缓冲层进行了研究,引入了传统场终止型IGBT(FS-IGBT)和线性缓变掺杂场终止型IGBT(LFS-IGBT)来与PFS-IGBT作对比。PFS-IGBT的缓冲层通过多次注氢形成,从背面到内部的掺杂浓度依次降低,具有多个浓度峰值,厚度为2030μm。FS-IGBT的缓冲层掺杂浓度较高,厚度为5μm。LFS-IGBT的缓冲层从背面到内部的掺杂浓度呈线性降低,其厚度为2030μm。采用Sentaurus TCAD对三种具有不同缓冲层结构的IGBT(600V/40A)的特性进行了分析。结果表明,PFS-IGBT通过控制注氢次数、剂量和能量可以获得最优的掺杂分布,器件性能与LFSIGBT相当,比FS-IGBT拥有更平缓的电流关断波形和更强的短路坚固性。
In order to reduce the difficulty of ultrathin wafer process and improve the switching behavior of low voltage rated field stop IGBT(FS-IGBT),the buffer layer of proton implanted IGBT(PFS-IGBT)was proposed and studied emphatically.Another two kinds of layers were introduced to compare the characteristics.The buffer layer of PFS-IGBT had a thickness of 20 to 30 μm,formed by multiple injections of proton.It had a plurality of concentration peaks that decreased successively from the back to the inside of the chip.FS-IGBT had a buffer layer with a thickness less than 5μm and a relatively high doping concentration.Linear-doping field stop IGBT(LFSIGBT)had a 20-30μm buffer layer with a linear concentration variation from the back to the inside of the chip.Based on 600 V/40 Atrench IGBTs,characteristics of the IGBTs were analyzed.The results showed that PFS-IGBT could achieve an optimal doping file through adjusting the dose,energy and implantation number.It had more smoothly switched current waveforms and stronger short circuit robustness compared with the FS-IGBT.
In order to reduce the difficulty of ultrathin wafer process and improve the switching behavior of low voltage rated field stop IGBT(FS-IGBT),the buffer layer of proton implanted IGBT(PFS-IGBT)was proposed and studied emphatically.Another two kinds of layers were introduced to compare the characteristics.The buffer layer of PFS-IGBT had a thickness of 20 to 30 μm,formed by multiple injections of proton.It had a plurality of concentration peaks that decreased successively from the back to the inside of the chip.FS-IGBT had a buffer layer with a thickness less than 5μm and a relatively high doping concentration.Linear-doping field stop IGBT(LFSIGBT)had a 20-30μm buffer layer with a linear concentration variation from the back to the inside of the chip.Based on 600 V/40 Atrench IGBTs,characteristics of the IGBTs were analyzed.The results showed that PFS-IGBT could achieve an optimal doping file through adjusting the dose,energy and implantation number.It had more smoothly switched current waveforms and stronger short circuit robustness compared with the FS-IGBT.
引文
[1]LASKA T,MUNZER M,PFIRSCH F,et al.The field stop IGBT(FS IGBT)-a new power device concept with great improvement potential[C]∥Proceed 12th Int Symp Power Semicond Dev&Integr Circ.Toulouse,France.2000:355-358.
[2]MATSUDAI T,TSUKUDA M,UMEKAWA S,et al.New anode design concept of 600Vthin wafer PTIGBT with very low dose p-buffer and transparent pemitter[C]∥Proceed 12th Int Symp Power Semicond Dev&Integr Circ.Cambridge,UK.2003:75-78.
[3]VOBECKY J,RAHIMO M,KOPTA A,et al.Exploring the silicon design limits of thin wafer IGBT technology the controlled punch through(CPT)IGBT[C]∥Proceed 12th Int Symp Power Semicond Dev&Integr Circ.Orlando,FL,USA.2008:76-79.
[4]KE M,DEVINY I,QIN R,et al.Process development and proton implanted n-type buffer optimization for1700Vrated thin wafer fast recovery diodes[C]∥15th Europ Conf Power Elec&Applic.Lille,France.2013:1-7.
[5]KLUG J N,LUTZ J,MEIJER J B,et al.N-type doping of silicon by proton implantation[C]∥13th Europ Conf Power Elec&Applic.Barcelon,Spain.2011:1-7.
[6]LASKA T,MILLER G,PFAFFENLEHNER M,et al.Short circuit properties of trench-/field-stopIGBTs-design aspects for a superior robustness[C]∥Proceed 15th Int Symp Power Semicond Dev&Integr Circ.Cambridge,UK.2003:152-155.
[7]MILADY S,SILBER D,PFIRSCH F,et al.Simulation studies and modeling short circuit current oscillations in IGBTs[C]∥Proceed 21th Int Symp Power Semicond Dev&Integr Circ.Barcelon,Spain.2009:37-40.
[8]KOPTA A,RAHIMO M,SCHLAPBACH U,et al.Limitation of the short-circuit ruggedness of highvoltage IGBTs[C]∥Proceed 21th Int Symp Power Semicond Dev&Integr Circ.Barcelon,Spain.2009:33-36.
[9]LINDER S.Power semiconductors[M].Boca Raton:CRC Press.2006:241.
[10]BALIGA J.Fundamentals of power semiconductor devices[M].Berlin:Springer,2008:768.
[2]MATSUDAI T,TSUKUDA M,UMEKAWA S,et al.New anode design concept of 600Vthin wafer PTIGBT with very low dose p-buffer and transparent pemitter[C]∥Proceed 12th Int Symp Power Semicond Dev&Integr Circ.Cambridge,UK.2003:75-78.
[3]VOBECKY J,RAHIMO M,KOPTA A,et al.Exploring the silicon design limits of thin wafer IGBT technology the controlled punch through(CPT)IGBT[C]∥Proceed 12th Int Symp Power Semicond Dev&Integr Circ.Orlando,FL,USA.2008:76-79.
[4]KE M,DEVINY I,QIN R,et al.Process development and proton implanted n-type buffer optimization for1700Vrated thin wafer fast recovery diodes[C]∥15th Europ Conf Power Elec&Applic.Lille,France.2013:1-7.
[5]KLUG J N,LUTZ J,MEIJER J B,et al.N-type doping of silicon by proton implantation[C]∥13th Europ Conf Power Elec&Applic.Barcelon,Spain.2011:1-7.
[6]LASKA T,MILLER G,PFAFFENLEHNER M,et al.Short circuit properties of trench-/field-stopIGBTs-design aspects for a superior robustness[C]∥Proceed 15th Int Symp Power Semicond Dev&Integr Circ.Cambridge,UK.2003:152-155.
[7]MILADY S,SILBER D,PFIRSCH F,et al.Simulation studies and modeling short circuit current oscillations in IGBTs[C]∥Proceed 21th Int Symp Power Semicond Dev&Integr Circ.Barcelon,Spain.2009:37-40.
[8]KOPTA A,RAHIMO M,SCHLAPBACH U,et al.Limitation of the short-circuit ruggedness of highvoltage IGBTs[C]∥Proceed 21th Int Symp Power Semicond Dev&Integr Circ.Barcelon,Spain.2009:33-36.
[9]LINDER S.Power semiconductors[M].Boca Raton:CRC Press.2006:241.
[10]BALIGA J.Fundamentals of power semiconductor devices[M].Berlin:Springer,2008:768.