摘要
使用对太赫兹波段有吸收效应的掺杂硅设计光子晶体结构,使得在光子带隙内的光波被吸收,并加上金属反射镜面将光子晶体的吸收峰和法布里-珀罗(F-P)谐振吸收峰结合,使此结构在0.29~0.31 THz波段达到宽频吸收,并且在0.31~0.34 THz波段通过测量光子晶体的反射率可以计算出对应温度。在使用商业电磁仿真软件CST2014仿真和优化参数后,反射率对应温度变化的变化范围是0.09~0.36,即最大值与最小值有4倍之差,这一特性表明,此结构的反射率变化随温度变化十分明显,是一款十分灵敏的温度传感器。此外,在入射角不大于40°时,结构性能依然良好。
In this paper, the photonic crystal structure was designed using the doped silicon which has absorption effect on terahertz band. As a result, the light wave in the photonic band gap was absorbed. In addition, the reflective mirror of metal facilitated the combination of the absorption peak of photonic crystal and Fabry-Perot(F-P) resonant absorption peak. Thus, as this structure was not affected by temperature changes in 0.31-0.34 THz band, it could achieve broadband absorption.Moreover, the 0.29-0.31 THz band had the temperature sensing function. By using the commercial electromagnetic simulation software CST2014 to stimulate the optimization parameter, a photonic crystal-based temperature sensor with large incidence angle was designed. The reflectivity would change with the linear variation of temperature.
引文
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