CMOS高线性度非对称式SPDT开关的设计
摘要
介绍了一种具有高线性度非对称式单刀双掷开关,本电路在传统对称式电路结构的基础上进行优化,对称式结构的其中一条支路上增加可变阻抗模块,这种非对称式结构可以满足开关在发射模式下对高功率处理容量的要求。该非对称式工作在15GHz时,在发射模式下,插入损耗为1.9dB,隔离度为18dB,输入1dB压缩点为26dBm,回波损耗S11、S22分别为-21dB和-18dB;在接收模式下,插入损耗为1.4dB,隔离度为21dB,输出1dB压缩点为7.6dBm,回波损耗S11、S22分别为-28 d B和-18dB。
引文
[1]Wang C. Design of High Power CMOS Microwave Switch[J].2011:12-16.
[2]Jin Y,Nguyen C. High power and linearity CMOS RFIC transmit-receive switch for ultra-Wideband radar and communication systems[C].Radar Symposium,2008 International.IEEE,2008:1-2.
[3]Zhai C,Cheng K K M.Dual-Mode CMOS RF Power Amplifier Design Using a Novel Reconfigurable Single-Switch SingleInductor Balun[J]. IEEE Transactions on Microwave Theory&Techniques,PP(99):1-10.
[4]Jin Y,Nguyen C. Ultra-Compact High-Linearity HighPower Fully Integrated DC–20-GHz 0.18-μm CMOS T/R Switch[J].IEEE Transactions on Microwave Theory&Techniques,2007,55(1):30-36.
[2]Jin Y,Nguyen C. High power and linearity CMOS RFIC transmit-receive switch for ultra-Wideband radar and communication systems[C].Radar Symposium,2008 International.IEEE,2008:1-2.
[3]Zhai C,Cheng K K M.Dual-Mode CMOS RF Power Amplifier Design Using a Novel Reconfigurable Single-Switch SingleInductor Balun[J]. IEEE Transactions on Microwave Theory&Techniques,PP(99):1-10.
[4]Jin Y,Nguyen C. Ultra-Compact High-Linearity HighPower Fully Integrated DC–20-GHz 0.18-μm CMOS T/R Switch[J].IEEE Transactions on Microwave Theory&Techniques,2007,55(1):30-36.