Synthesis and Characteristics of Type Ib Diamond Doped with NiS as an Additive
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摘要
Large diamond single crystals doped with NiS are synthesized under high pressure and high temperature. It is found that the effects on the surface and shape of the synthesized diamond crystals are gradually enhanced by increasing the NiS additive amount. It is noted that the synthesis temperature is necessarily raised to 1280℃ to realize the diamond growth when the additive amount reaches 3.5% in the synthesis system. The results of Fourier transform infrared spectroscopy(FTIR) demonstrate that S is incorporated into the diamond lattice and exists in the form of C–S bond. Based on the FTIR results, it is found that N concentration in diamond is significantly increased, which are ascribed to the NiS additive. The analysis of x-ray photoelectron spectroscopy shows that S is present in states of C–S, S–O and C–S–O bonds. The relative concentration of S compared to C continuously increases in the synthesized diamonds as the amount of additive NiS increases. Additionally,the electrical properties can be used to characterize the obtained diamond crystals and the results show that diamonds doped with NiS crystals behave as n-type semiconductors.
Large diamond single crystals doped with NiS are synthesized under high pressure and high temperature. It is found that the effects on the surface and shape of the synthesized diamond crystals are gradually enhanced by increasing the NiS additive amount. It is noted that the synthesis temperature is necessarily raised to 1280℃ to realize the diamond growth when the additive amount reaches 3.5% in the synthesis system. The results of Fourier transform infrared spectroscopy(FTIR) demonstrate that S is incorporated into the diamond lattice and exists in the form of C–S bond. Based on the FTIR results, it is found that N concentration in diamond is significantly increased, which are ascribed to the NiS additive. The analysis of x-ray photoelectron spectroscopy shows that S is present in states of C–S, S–O and C–S–O bonds. The relative concentration of S compared to C continuously increases in the synthesized diamonds as the amount of additive NiS increases. Additionally,the electrical properties can be used to characterize the obtained diamond crystals and the results show that diamonds doped with NiS crystals behave as n-type semiconductors.
Large diamond single crystals doped with NiS are synthesized under high pressure and high temperature. It is found that the effects on the surface and shape of the synthesized diamond crystals are gradually enhanced by increasing the NiS additive amount. It is noted that the synthesis temperature is necessarily raised to 1280℃ to realize the diamond growth when the additive amount reaches 3.5% in the synthesis system. The results of Fourier transform infrared spectroscopy(FTIR) demonstrate that S is incorporated into the diamond lattice and exists in the form of C–S bond. Based on the FTIR results, it is found that N concentration in diamond is significantly increased, which are ascribed to the NiS additive. The analysis of x-ray photoelectron spectroscopy shows that S is present in states of C–S, S–O and C–S–O bonds. The relative concentration of S compared to C continuously increases in the synthesized diamonds as the amount of additive NiS increases. Additionally,the electrical properties can be used to characterize the obtained diamond crystals and the results show that diamonds doped with NiS crystals behave as n-type semiconductors.
引文
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[33]Wang Y J and Yin Z Q 2014 Plasma Sci.Technol.16 255
[2]Zhang G F,Zhang B,Deng Z H et al 2010 CIRP Ann.59355
[3]Strong H M and Chrenko R M 1971 J.Phys.Chem.751838
[4]Liu J S,Li H,Sun B W et al 2016 Chin.Phys.Lett.33118101
[5]Gong C S,Li S S,Zhang H R et al 2017 Int.J.Refract.Met.H.66 116
[6]Kato H,Yamasaki H and Okushi H 2005 Diamond Relat.Mater.14 2007
[7]Zhang H,Li S S,Su T C et al 2016 Chin.Phys.B 25 118104
[8]Tang L,Yue R and Wang Y 2018 Carbon 130 458
[9]Chen N,Ma H A,Yan B M et al 2018 Cryst.Growth 183870
[10]Schr?der T,Mouradian S L,Zheng J b et al 2016 J.Opt.Soc.Am.B 33 B65
[11]Sedov V,Ralchenko V,Khomich A A et al 2015 Diamond Relat.Mater.56 23
[12]Ren Z Y,Zhang J F,Zhang J C et al 2018 Chin.Phys.Lett.35 078101
[13]Hasegawa,Masataka T,Daisuke Y et al 1999 Jpn.J.Appl.Phys.38 L1519
[14]Sakaguchi I,Gamo M N,Kikuchi Y et al 1999 Phys.Rev.B 60 R2139
[15]Pal’Yanov Y,Borzdov Y,Kupriyanov I et al 2001 Diamond Relat.Mater.10 2145
[16]Sato K and Katsura T 2001 J.Cryst.Growth 223 189
[17]Zhang H,Li S S,Li G H et al 2017 Int.J.Refract.Met.Hard Mater.66 26
[18]Chen N,Ma H A,Fang C et al 2017 Int.J.Refract.Met.Hard Mater.66 122
[19]Wang J K,Li S S,Jiang Q W et al 2018 Chin.Phys.B 27088102
[20]Wang J Z,Li S S,Su T C et al 2018 Acta Phys.Sin.67168101(in Chinese)
[21]Zhang J Q,Ma H A,Jiang Y P et al 2007 Diamond Relat.Mater.16 283
[22]Ma L Q,Ma H A,Xiao H Y et al 2010 Chin.Sci.Bull.English 55 677
[23]Xiao H Y,Li S S,Qin Y K et al 2014 Acta Phys.Sin.63198101(in Chinese)
[24]Li S S,Li X L,Ma H A et al 2011 Chin.Phys.Lett.28068101
[25]Liang Z Z,Jia X P,Zhu P W et al 2006 Diamond Relat.Mater.15 10
[26]Camarillo E A and Flores H 2010 J.Chem.Thermodyn.42425
[27]Woods G S,Van Wyk J A and Collins A T 1990 Philos.Mag.B 62 589
[28]Fisher D and Lawson S C 1998 Diamond Relat.Mater.7299
[29]Hedman J,Baer Y,Berndtsson A et al 1972 J.Electron Spectrosc.Relat.Phenom.1 101
[30]Maire J C,Baldy A,Boyer D et al 1979 Chem.informatics62 1566
[31]Volmer U M and Stratmann M 1992 Appl.Surf.Sci.55 19
[32]Kaushik V K 1991 J.Electron Spectrosc.Relat.Phenom.56 273
[33]Wang Y J and Yin Z Q 2014 Plasma Sci.Technol.16 255