存在气泡缺陷的盆式绝缘子电场仿真分析
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摘要
盆式绝缘子内部存在气泡缺陷是引起局部放电和沿面闪络的重要因素,为研究气泡对盆式绝缘子电场分布的影响,采用ANSYS有限元分析软件建立存在气泡缺陷的盆式绝缘子三维仿真模型,分别研究快速暂态过电压和工频电压作用下,气泡大小、位置对盆式绝缘子电场分布及沿面闪络的影响。结果表明:气泡缺陷会引起盆式绝缘子电场畸变,最大电场强度比无气泡缺陷时增大了30%左右,且气泡越靠近金属端,盆式绝缘子电场强度越大。电场畸变主要出现在气泡缺陷附近,畸变程度与气泡尺寸、径向距离及距表面的距离有关。
The bubble defect inside basin-type insulators is an important factor causing partial discharge and surface flashover. In order to study the influence of bubble on the electric field distribution of basin-type insulators, a three-dimensional simulation model of basin-type insulator with bubble defect was established using the ANSYS finite element analysis software. The influence of bubble size and location on the electric field distribution and surface flashover of basin-type insulator was studied under very fast transient overvoltage and power frequency voltage. The results show that the bubble defect would make the electric field of basin-type insulator distort, and the maximum electric field intensity increases by about 30% compared with the basin-type insulator without bubble defect. The closer the bubble to the metal end, the greater the electric field intensity of basin-type insulator. The electric field distortion appears at the bubble defect nearby, and the distortion degree is related to the size, radial distance, and distance to the surface of bubble.
The bubble defect inside basin-type insulators is an important factor causing partial discharge and surface flashover. In order to study the influence of bubble on the electric field distribution of basin-type insulators, a three-dimensional simulation model of basin-type insulator with bubble defect was established using the ANSYS finite element analysis software. The influence of bubble size and location on the electric field distribution and surface flashover of basin-type insulator was studied under very fast transient overvoltage and power frequency voltage. The results show that the bubble defect would make the electric field of basin-type insulator distort, and the maximum electric field intensity increases by about 30% compared with the basin-type insulator without bubble defect. The closer the bubble to the metal end, the greater the electric field intensity of basin-type insulator. The electric field distortion appears at the bubble defect nearby, and the distortion degree is related to the size, radial distance, and distance to the surface of bubble.
引文
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[2]HE Jiaxi,GUAN Yonggang,LIU Weidong,et al.Design optimization of ferrite rings for VFTO mitigation[J].IEEETransactions on Power Delivery,2017,32(3):1181-1186.
[3]邵冲,杨钰,刘卫东,等.断路器结构参数对GIS中特快速暂态过电压波形的影响[J].高电压技术,2011,37(3):577-584.
[4]孟涛.分段电弧模型下快速暂态过电压特性仿真及其影响因素的研究[D].沈阳:沈阳工业大学,2010.
[5]郑必成,傅煜.500kV GIS开关站快速暂态过电压计算及对主变的影响[J].高压电器,2012,48(12):135-138,142.
[6]段韶峰,赵琳,李志兵,等.GIS中VFTO、VFTC统计特性试验和仿真方法研究[J].电网技术,2015,39(12):3634-3640.
[7]高有华,王彩云,刘晓明,等.盆式绝缘子存在自由金属颗粒时的电场分析及其对沿面闪络的影响[J].电工电能新技术,2015,34(8):56-61.
[8]苑维琦.特高压盆式绝缘子裂纹缺陷放电研究[D].北京:华北电力大学,2014.
[9]罗文天.存在气泡缺陷的盆式绝缘子电场仿真分析[D].沈阳:沈阳工业大学,2014.
[10]陈敏.介质高频特性对GIS绝缘子绝缘性能影响研究[D].沈阳:沈阳工业大学,2017.
[11]王永强,胡芳芳,谢军,等.GIS盆式绝缘子气隙缺陷下电场变化规律仿真研究[J].绝缘材料,2016,49(1):40-45.
[12]王浩然,郭子豪,张丝钰,等.缺陷对特高压交流盆式绝缘子电场分布的影响[J].高电压技术,2018,44(3):1-11.
[13]SZEWCZYK M,PIASECKI W,STOSUR M,et al.Damping of VFTO in gas-insulated switchgear by a new coating material[J].IEEE Transactions on Power Delivery,2016,36(6):2553-2558.
[14]张龙,张伟,李锐鹏,等.10kV XLPE电缆终端缺陷仿真与电场分析[J].绝缘材料,2014,47(4):83-88.
[15]刘刚,阮班义,陈志娟,等.10kV XLPE电缆接头连接管含空气隙缺陷的电场分析[J].绝缘材料,2011,44(5):62-66,73.
[16]SZEWCZYK M,PAW?OWSKI J,KUTORASI?SKI K,et al.High-frequency model of magnetic rings for simulation of VFTO damping in gas-insulated switchgear with full-scale validation[J].IEEE Transactions on Power Delivery,2015,30(5):2331-2338.
[17]WEN Tao,ZHANG Qiaogen,MA Jingtan,et al.Discharge characteristics of long SF6gas gap with and without insulator in GIS under VFTO and LI[J].CSEE Journal of Power and Energy Systems,2015,1(3):16-22.
[18]赵毅飞,黄金磊,张俊鹏.交流500kV复合绝缘子断裂原因分析[J].绝缘材料,2014,47(6):79-82.