二维过渡金属二硫族化合物的相工程（英文）
|
摘要
二维过渡金属二硫族化合物因其多样的原子排布和能带结构而备受关注.除了热力学稳定的相之外,许多亚稳态相的过渡金属二硫族化合物也表现出有趣的性质.为了获得特定相的二维过渡金属二硫族化合物,相工程策略(包括相转变和相选择合成)凸显的十分重要.在本文中,我们首先介绍了不同相的二维过渡金属二硫族化合物的结构和稳定性.接着,我们总结了多种相转变策略的详细过程和机理.此外,由于对过渡金属二硫族化合物相纯度的需求不断提升,我们也展示了新型的相选择合成策略.最后,我们从相纯度和可控性两个方面指出二维过渡金属二硫族化合物相工程面临的挑战,展望了相工程策略在可控获得高相纯度过渡金属二硫族化合物的前景.这篇综述将促进二维过渡金属二硫族化合物及其他二维材料的可控相工程在基础研究和实际应用方面的发展.
Two-dimensional(2D) transition metal dichalcogenides(TMDs) have gained much attention in virtue of their various atomic configurations and band structures.Apart from those thermodynamically stable phases, plenty of metastable phases exhibit interesting properties. To obtain 2D TMDs with specific phases, it is important to develop phase engineering strategies including phase transition and phaseselective synthesis. Phase transition is a conventional method to transform one phase to another, while phase-selective synthesis means the direct fabrication of the target phases for2D TMDs. In this review, we introduce the structures and stability of 2D TMDs with different phases. Then, we summarize the detailed processes and mechanism of the traditional phase transition strategies. Moreover, in view of the increasing demand of high-phase purity TMDs, we present the advanced phase-selective synthesis strategies. Finally, we underline the challenges and outlooks of phase engineering of 2D TMDs in two aspects—high phase purity and excellent controllability. This review may promote the development of controllable phase engineering for 2D TMDs and even other2D materials toward both fundamental studies and practical applications.
Two-dimensional(2D) transition metal dichalcogenides(TMDs) have gained much attention in virtue of their various atomic configurations and band structures.Apart from those thermodynamically stable phases, plenty of metastable phases exhibit interesting properties. To obtain 2D TMDs with specific phases, it is important to develop phase engineering strategies including phase transition and phaseselective synthesis. Phase transition is a conventional method to transform one phase to another, while phase-selective synthesis means the direct fabrication of the target phases for2D TMDs. In this review, we introduce the structures and stability of 2D TMDs with different phases. Then, we summarize the detailed processes and mechanism of the traditional phase transition strategies. Moreover, in view of the increasing demand of high-phase purity TMDs, we present the advanced phase-selective synthesis strategies. Finally, we underline the challenges and outlooks of phase engineering of 2D TMDs in two aspects—high phase purity and excellent controllability. This review may promote the development of controllable phase engineering for 2D TMDs and even other2D materials toward both fundamental studies and practical applications.
引文
1 Zeng M,Xiao Y,Liu J,et al.Exploring two-dimensional materials toward the next-generation circuits:from monomer design to assembly control.Chem Rev,2018,118:6236-6296
2 Yang H,Kim SW,Chhowalla M,et al.Structural and quantumstate phase transition in van der Waals layered materials.Nat Phys,2017,13:931-937
3 Cai Z,Liu B,Zou X,et al.Chemical vapor deposition growth and applications of two-dimensional materials and their heterostructures.Chem Rev,2018,118:6091-6133
4 Li H,Li Y,Aljarb A,et al.Epitaxial growth of two-dimensional layered transition-metal dichalcogenides:growth mechanism,controllability,and scalability.Chem Rev,2018,118:6134-6150
5 Han GH,Duong DL,Keum DH,et al.Van der Waals metallic transition metal dichalcogenides.Chem Rev,2018,118:6297-6336
6 Tan C,Lai Z,Zhang H.Ultrathin two-dimensional multinary layered metal chalcogenide nanomaterials.Adv Mater,2017,29:1701392
7 Zhang X,Cheng H,Zhang H.Recent progress in the preparation,assembly,transformation,and applications of layer-structured nanodisks beyond graphene.Adv Mater,2017,29:1701704
8 Tan C,Cao X,Wu XJ,et al.Recent advances in ultrathin twodimensional nanomaterials.Chem Rev,2017,117:6225-6331
9 Sun L,Zheng J.Optical visualization of MoS2grain boundaries by gold deposition.Sci China Mater,2018,61:1154-1158
10 Liu J,Cao H,Jiang B,et al.Newborn 2D materials for flexible energy conversion and storage.Sci China Mater,2016,59:459-474
11 Iannaccone G,Bonaccorso F,Colombo L,et al.Quantum engineering of transistors based on 2D materials heterostructures.Nat Nanotechnol,2018,13:183-191
12 Ali MN,Xiong J,Flynn S,et al.Large,non-saturating magnetoresistance in WTe2.Nature,2014,514:205-208
13 Costanzo D,Jo S,Berger H,et al.Gate-induced superconductivity in atomically thin MoS2crystals.Nat Nanotechnol,2016,11:339-344
14 Xi X,Wang Z,Zhao W,et al.Ising pairing in superconducting NbSe2atomic layers.Nat Phys,2015,12:139-143
15 Costanzo D,Zhang H,Reddy BA,et al.Tunnelling spectroscopy of gate-induced superconductivity in MoS2.Nat Nanotechnol,2018,13:483-488
16 Sohn E,Xi X,He WY,et al.An unusual continuous paramagnetic-limited superconducting phase transition in 2D NbSe2.Nat Mater,2018,17:504-508
17 Fei Z,Zhao W,Palomaki TA,et al.Ferroelectric switching of a two-dimensional metal.Nature,2018,560:336-339
18 Bonilla M,Kolekar S,Ma Y,et al.Strong room-temperature ferromagnetism in VSe2monolayers on van der Waals substrates.Nat Nanotechnol,2018,13:289-293
19 Wu S,Fatemi V,Gibson QD,et al.Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal.Science,2018,359:76-79
20 Tang S,Zhang C,Wong D,et al.Quantum spin Hall state in monolayer 1T’-WTe2.Nat Phys,2017,13:683-687
21 Voiry D,Mohite A,Chhowalla M.Phase engineering of transition metal dichalcogenides.Chem Soc Rev,2015,44:2702-2712
22 Ma Y,Kuc A,Jing Y,et al.Two-dimensional Haeckelite NbS2:Adiamagnetic high-mobility semiconductor with Nb4+ions.Angew Chem Int Ed,2017,56:10214-10218
23 Ma X,Guo P,Yi C,et al.Raman scattering in the transition-metal dichalcogenides of 1T’-MoTe2,Td-MoTe2,and Td-WTe2.Phys Rev B,2016,94:214105
24 Shirodkar SN,Waghmare UV.Emergence of ferroelectricity at a metal-semiconductor transition in a 1T monolayer of MoS2.Phys Rev Lett,2014,112:157601
25 Chhowalla M,Shin HS,Eda G,et al.The chemistry of twodimensional layered transition metal dichalcogenide nanosheets.Nat Chem,2013,5:263-275
26 Wilson JA,Yoffe AD.The transition metal dichalcogenides discussion and interpretation of the observed optical,electrical and structural properties.Adv Phys,1969,18:193-335
27 Xu M,Liang T,Shi M,et al.Graphene-like two-dimensional materials.Chem Rev,2013,113:3766-3798
28 Ataca C,?ahin H,Ciraci S.Stable,single-layer MX2transitionmetal oxides and dichalcogenides in a honeycomb-like structure.J Phys Chem C,2012,116:8983-8999
29 Zhang X,Lai Z,Ma Q,et al.Novel structured transition metal dichalcogenide nanosheets.Chem Soc Rev,2018,47:3301-3338
30 Wang X,Song Z,Wen W,et al.Potential 2D materials with phase transitions:structure,synthesis,and device applications.Adv Mater,2018,499:1804682
31 Wang J,Wei Y,Li H,et al.Crystal phase control in two-dimensional materials.Sci China Chem,2018,61:1227-1242
32 Zhou J,Lin J,Huang X,et al.A library of atomically thin metal chalcogenides.Nature,2018,556:355-359
33 Duerloo KAN,Li Y,Reed EJ.Structural phase transitions in twodimensional Mo-and W-dichalcogenide monolayers.Nat Commun,2014,5:4214
34 Cheng P,Sun K,Hu YH.Memristive behavior and ideal memristor of 1T phase MoS2nanosheets.Nano Lett,2016,16:572-576
35 Lin C,Zhu X,Feng J,et al.Hydrogen-incorporated TiS2ultrathin nanosheets with ultrahigh conductivity for stamp-transferrable electrodes.J Am Chem Soc,2013,135:5144-5151
36 Li LJ,O'Farrell ECT,Loh KP,et al.Controlling many-body states by the electric-field effect in a two-dimensional material.Nature,2016,529:185-189
37 Chen P,Pai WW,Chan YH,et al.Emergence of charge density waves and a pseudogap in single-layer TiTe2.Nat Commun,2017,8:516
38 Li L,Fang X,Zhai T,et al.Electrical transport and high-performance photoconductivity in individual ZrS2nanobelts.Adv Mater,2010,22:4151-4156
39 Mleczko MJ,Zhang C,Lee HR,et al.HfSe2and ZrSe2:Twodimensional semiconductors with native high-κoxides.Sci Adv,2017,3:e1700481
40 Tsipas P,Tsoutsou D,Fragkos S,et al.Massless dirac fermions in ZrTe2semimetal grown on InAs(111)by van der Waals epitaxy.ACS Nano,2018,12:1696-1703
41 Fu L,Wang F,Wu B,et al.Van der Waals epitaxial growth of atomic layered HfS2crystals for ultrasensitive near-infrared phototransistors.Adv Mater,2017,29:1700439
42 Mangelsen S,Naumov PG,Barkalov OI,et al.Large nonsaturating magnetoresistance and pressure-induced phase transition in the layered semimetal HfTe2.Phys Rev B,2017,96:205148
43 Guo Y,Deng H,Sun X,et al.Modulation of metal and insulator states in 2D ferromagnetic VS2by van der Waals interaction engineering.Adv Mater,2017,29:1700715
44 Ji Q,Li C,Wang J,et al.Metallic vanadium disulfide nanosheets as a platform material for multifunctional electrode applications.Nano Lett,2017,17:4908-4916
45 Li J,Zhao B,Chen P,et al.Synthesis of ultrathin metallic MTe2(M=V,Nb,Ta)single-crystalline nanoplates.Adv Mater,2018,30:1801043
46 Wang X,Lin J,Zhu Y,et al.Chemical vapor deposition of trigonal prismatic NbS2monolayers and 3R-polytype few-layers.Nanoscale,2017,9:16607-16611
47 Han JH,Kim HK,Baek B,et al.Activation of the basal plane in two dimensional transition metal chalcogenide nanostructures.JAm Chem Soc,2018,140:13663-13671
48 Calandra M.Phonon-assisted magnetic mott-insulating state in the charge density wave phase of single-layer 1T NbSe2.Phys Rev Lett,2018,121:026401
49 Yoshida M,Ye J,Zhang Y,et al.Extended polymorphism of twodimensional material.Nano Lett,2017,17:5567-5571
50 Wang X,Liu H,Wu J,et al.Chemical growth of 1T-TaS2monolayer and thin films:robust charge density wave transitions and high bolometric responsivity.Adv Mater,2018,30:1800074
51 Shi J,Chen X,Zhao L,et al.Chemical vapor deposition grown wafer-scale 2D tantalum diselenide with robust charge-densitywave order.Adv Mater,2018,30:1804616
52 Miller DC,Mahanti SD,Duxbury PM.Charge density wave states in tantalum dichalcogenides.Phys Rev B,2018,97:045133
53 Fu L,Sun Y,Wu N,et al.Direct growth of MoS2/h-BN heterostructures via a sulfide-resistant alloy.ACS Nano,2016,10:2063-2070
54 Acerce M,Voiry D,Chhowalla M.Metallic 1T phase MoS2nanosheets as supercapacitor electrode materials.Nat Nanotechnol,2015,10:313-318
55 Tongay S,Zhou J,Ataca C,et al.Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors:MoSe2versus MoS2.Nano Lett,2012,12:5576-5580
56 Yu Y,Nam GH,He Q,et al.High phase-purity 1T’-MoS2-and1T’-MoSe2-layered crystals.Nat Chem,2018,10:638-643
57 Sung JH,Heo H,Si S,et al.Coplanar semiconductor-metal circuitry defined on few-layer MoTe2via polymorphic heteroepitaxy.Nat Nanotechnol,2017,12:1064-1070
58 Zhang Q,Xiao Y,Zhang T,et al.Iodine-mediated chemical vapor deposition growth of metastable transition metal dichalcogenides.Chem Mater,2017,29:4641-4644
59 Deng K,Wan G,Deng P,et al.Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2.Nat Phys,2016,12:1105-1110
60 Gao Y,Liu Z,Sun DM,et al.Large-area synthesis of high-quality and uniform monolayer WS2on reusable Au foils.Nat Commun,2015,6:8569
61 Wang QH,Kalantar-Zadeh K,Kis A,et al.Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.Nat Nanotechnol,2012,7:699-712
62 Ma Y,Liu B,Zhang A,et al.Reversible semiconducting-to-metallic phase transition in chemical vapor deposition grown monolayer WSe2and applications for devices.ACS Nano,2015,9:7383-7391
63 Zheng F,Cai C,Ge S,et al.On the quantum spin hall gap of monolayer 1T’-WTe2.Adv Mater,2016,28:4845-4851
64 Wang Y,Liu E,Liu H,et al.Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2.Nat Commun,2016,7:13142
65 Tongay S,Sahin H,Ko C,et al.Monolayer behaviour in bulk ReS2due to electronic and vibrational decoupling.Nat Commun,2014,5:3252
66 Zhong HX,Gao S,Shi JJ,et al.Quasiparticle band gaps,excitonic effects,and anisotropic optical properties of the monolayer distorted 1T diamond-chain structures ReS2and ReSe2.Phys Rev B,2015,92:115438
67 MiróP,Ghorbani-Asl M,Heine T.Two dimensional materials beyond MoS2:Noble-transition-metal dichalcogenides.Angew Chem Int Ed,2014,53:3015-3018
68 Zhao Y,Qiao J,Yu Z,et al.High-electron-mobility and air-stable2D layered PtSe2FETs.Adv Mater,2017,29:1604230
69 Fu L,Hu D,Mendes RG,et al.Highly organized epitaxy of dirac semimetallic PtTe2crystals with extrahigh conductivity and visible surface plasmons at edges.ACS Nano,2018,12:9405-9411
70 Py MA,Haering RR.Structural destabilization induced by lithium intercalation in MoS2and related compounds.Can J Phys,1983,61:76-84
71 Yang D,Sandoval SJ,Divigalpitiya WMR,et al.Structure of single-molecular-layer MoS2.Phys Rev B,1991,43:12053-12056
72 Wang H,Lu Z,Xu S,et al.Electrochemical tuning of vertically aligned MoS2nanofilms and its application in improving hydrogen evolution reaction.Proc Natl Acad Sci USA,2013,110:19701-19706
73 Qi Y,Xu Q,Wang Y,et al.CO2-induced phase engineering:protocol for enhanced photoelectrocatalytic performance of 2DMoS2nanosheets.ACS Nano,2016,10:2903-2909
74 Zhang J,Wu J,Guo H,et al.Unveiling active sites for the hydrogen evolution reaction on monolayer MoS2.Adv Mater,2017,29:1701955
75 Yamaguchi H,Blancon JC,Kappera R,et al.Spatially resolved photoexcited charge-carrier dynamics in phase-engineered monolayer MoS2.ACS Nano,2015,9:840-849
76 Kappera R,Voiry D,Yalcin SE,et al.Phase-engineered low-resistance contacts for ultrathin MoS2transistors.Nat Mater,2014,13:1128-1134
77 Silbernagel BG.Lithium intercalation complexes of layered transition metal dichalcogenides:An NMR survey of physical properties.Solid State Commun,1975,17:361-365
78 Tan C,Luo Z,Chaturvedi A,et al.Preparation of high-percentage1T-phase transition metal dichalcogenide nanodots for electrochemical hydrogen evolution.Adv Mater,2018,30:1705509
79 Tan C,Zhao W,Chaturvedi A,et al.Preparation of single-layer MoS2xSe2(1-x)and MoxW1-xS2nanosheets with high-concentration metallic 1T phase.Small,2016,12:1866-1874
80 Zeng Z,Yin Z,Huang X,et al.Single-layer semiconducting nanosheets:high-yield preparation and device fabrication.Angew Chem Int Ed,2011,50:11093-11097
81 Lai Z,Chaturvedi A,Wang Y,et al.Preparation of 1T’-phase ReS2xSe2(1-x)(x=0-1)nanodots for highly efficient electrocatalytic hydrogen evolution reaction.J Am Chem Soc,2018,140:8563-8568
82 Fan X,Xu P,Zhou D,et al.Fast and efficient preparation of exfoliated 2H MoS2nanosheets by sonication-assisted lithium intercalation and infrared laser-induced 1T to 2H phase reversion.Nano Lett,2015,15:5956-5960
83 Cheng Y,Nie A,Zhang Q,et al.Origin of the phase transition in lithiated molybdenum disulfide.ACS Nano,2014,8:11447-11453
84 Yan S,Qiao W,He X,et al.Enhancement of magnetism by structural phase transition in MoS2.Appl Phys Lett,2015,106:012408
85 Zhao W,Ribeiro RM,Eda G.Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets.Acc Chem Res,2015,48:91-99
86 Yin Y,Han J,Zhang Y,et al.Contributions of phase,sulfur vacancies,and edges to the hydrogen evolution reaction catalytic activity of porous molybdenum disulfide nanosheets.J Am Chem Soc,2016,138:7965-7972
87 Eda G,Yamaguchi H,Voiry D,et al.Photoluminescence from chemically exfoliated MoS2.Nano Lett,2011,11:5111-5116
88 Tan SJR,Abdelwahab I,Ding Z,et al.Chemical stabilization of1T’phase transition metal dichalcogenides with giant optical Kerr nonlinearity.J Am Chem Soc,2017,139:2504-2511
89 Sun L,Yan X,Zheng J,et al.Layer-dependent chemically induced phase transition of two-dimensional MoS2.Nano Lett,2018,18:3435-3440
90 Wang L,Xu Z,Wang W,et al.Atomic mechanism of dynamic electrochemical lithiation processes of MoS2nanosheets.J Am Chem Soc,2014,136:6693-6697
91 Kan M,Wang JY,Li XW,et al.Structures and phase transition of a MoS2monolayer.J Phys Chem C,2014,118:1515-1522
92 Wang X,Shen X,Wang Z,et al.Atomic-scale clarification of structural transition of MoS2upon sodium intercalation.ACSNano,2014,8:11394-11400
93 Zhang R,Tsai IL,Chapman J,et al.Superconductivity in potassium-doped metallic polymorphs of MoS2.Nano Lett,2016,16:629-636
94 Liu Q,Li X,He Q,et al.Gram-scale aqueous synthesis of stable few-layered 1T-MoS2:Applications for visible-light-driven photocatalytic hydrogen evolution.Small,2015,11:5556-5564
95 Liu Q,Li X,Xiao Z,et al.Stable metallic 1T-WS2nanoribbons intercalated with ammonia ions:the correlation between structure and electrical/optical properties.Adv Mater,2015,27:4837-4844
96 Li Y,Duerloo KAN,Wauson K,et al.Structural semiconductorto-semimetal phase transition in two-dimensional materials induced by electrostatic gating.Nat Commun,2016,7:10671
97 Wang Y,Xiao J,Zhu H,et al.Structural phase transition in monolayer MoTe2driven by electrostatic doping.Nature,2017,550:487-491
98 Kim S,Song S,Park J,et al.Long-range lattice engineering of MoTe2by a 2D electride.Nano Lett,2017,17:3363-3368
99 Kang Y,Najmaei S,Liu Z,et al.Plasmonic hot electron induced structural phase transition in a MoS2monolayer.Adv Mater,2014,26:6467-6471
100 Enyashin AN,Yadgarov L,Houben L,et al.New route for stabilization of 1T-WS2and MoS2phases.J Phys Chem C,2011,115:24586-24591
101 Chen Y,Xi J,Dumcenco DO,et al.Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys.ACS Nano,2013,7:4610-4616
102 Lin YC,Dumcenco DO,Huang YS,et al.Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2.Nat Nanotech,2014,9:391-396
103 Suh J,Tan TL,Zhao W,et al.Reconfiguring crystal and electronic structures of MoS2by substitutional doping.Nat Commun,2018,9:199
104 Title RS,Shafer MW.Band structure of the layered transitionmetal dichalcogenides:an experimental study by electron paramagnetic resonance on Nb-doped MoS2.Phys Rev Lett,1972,28:808-810
105 Zhu J,Wang Z,Yu H,et al.Argon plasma induced phase transition in monolayer MoS2.J Am Chem Soc,2017,139:10216-10219
106 Cho S,Kim S,Kim JH,et al.Phase patterning for ohmic homojunction contact in MoTe2.Science,2015,349:625-628
107 Chow PK,Jacobs-Gedrim RB,Gao J,et al.Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides.ACS Nano,2015,9:1520-1527
108 Tosun M,Chan L,Amani M,et al.Air-stable n-doping of WSe2by anion vacancy formation with mild plasma treatment.ACSNano,2016,10:6853-6860
109 Park JC,Yun SJ,Kim H,et al.Phase-engineered synthesis of centimeter-scale 1T’-and 2H-molybdenum ditelluride thin films.ACS Nano,2015,9:6548-6554
110 Keum DH,Cho S,Kim JH,et al.Bandgap opening in few-layered monoclinic MoTe2.Nat Phys,2015,11:482-486
111 Wang Z,Sun YY,Abdelwahab I,et al.Surface-limited superconducting phase transition on 1T-TaS2.ACS Nano,2018,12:12619-12628
112 Song S,Keum DH,Cho S,et al.Room temperature semiconductor-metal transition of MoTe2thin films engineered by strain.Nano Lett,2016,16:188-193
113 Nayak AP,Pandey T,Voiry D,et al.Pressure-dependent optical and vibrational properties of monolayer molybdenum disulfide.Nano Lett,2015,15:346-353
114 Voiry D,Goswami A,Kappera R,et al.Covalent functionalization of monolayered transition metal dichalcogenides by phase engineering.Nat Chem,2014,7:45-49
115 Yang K,Wang X,Li H,et al.Composition-and phase-controlled synthesis and applications of alloyed phase heterostructures of transition metal disulphides.Nanoscale,2017,9:5102-5109
116 Kang K,Xie S,Huang L,et al.High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.Nature,2015,520:656-660
117 Najmaei S,Liu Z,Zhou W,et al.Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers.Nat Mater,2013,12:754-759
118 Ju M,Liang X,Liu J,et al.Universal substrate-trapping strategy to grow strictly monolayer transition metal dichalcogenides crystals.Chem Mater,2017,29:6095-6103
119 Liu L,Wu J,Wu L,et al.Phase-selective synthesis of 1T’MoS2monolayers and heterophase bilayers.Nat Mater,2018,17:1108-1114
120 Zhou L,Xu K,Zubair A,et al.Large-area synthesis of high-quality uniform few-layer MoTe2.J Am Chem Soc,2015,137:11892-11895
121 Zhou L,Zubair A,Wang Z,et al.Synthesis of high-quality largearea homogenous 1T’MoTe2from chemical vapor deposition.Adv Mater,2016,28:9526-9531
122 Yoo Y,DeGregorio ZP,Su Y,et al.In-plane 2H-1T’MoTe2homojunctions synthesized by flux-controlled phase engineering.Adv Mater,2017,29:1605461
123 Chen P,Pai WW,Chan YH,et al.Large quantum-spin-Hall gap in single-layer 1T’WSe2.Nat Commun,2018,9:2003
124 Li S,Wang S,Tang DM,et al.Halide-assisted atmospheric pressure growth of large WSe2and WS2monolayer crystals.Appl Mater Today,2015,1:60-66
125 Chen K,Chen Z,Wan X,et al.A simple method for synthesis of high-quality millimeter-scale 1T’transition-metal telluride and near-field nanooptical properties.Adv Mater,2017,29:1700704
2 Yang H,Kim SW,Chhowalla M,et al.Structural and quantumstate phase transition in van der Waals layered materials.Nat Phys,2017,13:931-937
3 Cai Z,Liu B,Zou X,et al.Chemical vapor deposition growth and applications of two-dimensional materials and their heterostructures.Chem Rev,2018,118:6091-6133
4 Li H,Li Y,Aljarb A,et al.Epitaxial growth of two-dimensional layered transition-metal dichalcogenides:growth mechanism,controllability,and scalability.Chem Rev,2018,118:6134-6150
5 Han GH,Duong DL,Keum DH,et al.Van der Waals metallic transition metal dichalcogenides.Chem Rev,2018,118:6297-6336
6 Tan C,Lai Z,Zhang H.Ultrathin two-dimensional multinary layered metal chalcogenide nanomaterials.Adv Mater,2017,29:1701392
7 Zhang X,Cheng H,Zhang H.Recent progress in the preparation,assembly,transformation,and applications of layer-structured nanodisks beyond graphene.Adv Mater,2017,29:1701704
8 Tan C,Cao X,Wu XJ,et al.Recent advances in ultrathin twodimensional nanomaterials.Chem Rev,2017,117:6225-6331
9 Sun L,Zheng J.Optical visualization of MoS2grain boundaries by gold deposition.Sci China Mater,2018,61:1154-1158
10 Liu J,Cao H,Jiang B,et al.Newborn 2D materials for flexible energy conversion and storage.Sci China Mater,2016,59:459-474
11 Iannaccone G,Bonaccorso F,Colombo L,et al.Quantum engineering of transistors based on 2D materials heterostructures.Nat Nanotechnol,2018,13:183-191
12 Ali MN,Xiong J,Flynn S,et al.Large,non-saturating magnetoresistance in WTe2.Nature,2014,514:205-208
13 Costanzo D,Jo S,Berger H,et al.Gate-induced superconductivity in atomically thin MoS2crystals.Nat Nanotechnol,2016,11:339-344
14 Xi X,Wang Z,Zhao W,et al.Ising pairing in superconducting NbSe2atomic layers.Nat Phys,2015,12:139-143
15 Costanzo D,Zhang H,Reddy BA,et al.Tunnelling spectroscopy of gate-induced superconductivity in MoS2.Nat Nanotechnol,2018,13:483-488
16 Sohn E,Xi X,He WY,et al.An unusual continuous paramagnetic-limited superconducting phase transition in 2D NbSe2.Nat Mater,2018,17:504-508
17 Fei Z,Zhao W,Palomaki TA,et al.Ferroelectric switching of a two-dimensional metal.Nature,2018,560:336-339
18 Bonilla M,Kolekar S,Ma Y,et al.Strong room-temperature ferromagnetism in VSe2monolayers on van der Waals substrates.Nat Nanotechnol,2018,13:289-293
19 Wu S,Fatemi V,Gibson QD,et al.Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal.Science,2018,359:76-79
20 Tang S,Zhang C,Wong D,et al.Quantum spin Hall state in monolayer 1T’-WTe2.Nat Phys,2017,13:683-687
21 Voiry D,Mohite A,Chhowalla M.Phase engineering of transition metal dichalcogenides.Chem Soc Rev,2015,44:2702-2712
22 Ma Y,Kuc A,Jing Y,et al.Two-dimensional Haeckelite NbS2:Adiamagnetic high-mobility semiconductor with Nb4+ions.Angew Chem Int Ed,2017,56:10214-10218
23 Ma X,Guo P,Yi C,et al.Raman scattering in the transition-metal dichalcogenides of 1T’-MoTe2,Td-MoTe2,and Td-WTe2.Phys Rev B,2016,94:214105
24 Shirodkar SN,Waghmare UV.Emergence of ferroelectricity at a metal-semiconductor transition in a 1T monolayer of MoS2.Phys Rev Lett,2014,112:157601
25 Chhowalla M,Shin HS,Eda G,et al.The chemistry of twodimensional layered transition metal dichalcogenide nanosheets.Nat Chem,2013,5:263-275
26 Wilson JA,Yoffe AD.The transition metal dichalcogenides discussion and interpretation of the observed optical,electrical and structural properties.Adv Phys,1969,18:193-335
27 Xu M,Liang T,Shi M,et al.Graphene-like two-dimensional materials.Chem Rev,2013,113:3766-3798
28 Ataca C,?ahin H,Ciraci S.Stable,single-layer MX2transitionmetal oxides and dichalcogenides in a honeycomb-like structure.J Phys Chem C,2012,116:8983-8999
29 Zhang X,Lai Z,Ma Q,et al.Novel structured transition metal dichalcogenide nanosheets.Chem Soc Rev,2018,47:3301-3338
30 Wang X,Song Z,Wen W,et al.Potential 2D materials with phase transitions:structure,synthesis,and device applications.Adv Mater,2018,499:1804682
31 Wang J,Wei Y,Li H,et al.Crystal phase control in two-dimensional materials.Sci China Chem,2018,61:1227-1242
32 Zhou J,Lin J,Huang X,et al.A library of atomically thin metal chalcogenides.Nature,2018,556:355-359
33 Duerloo KAN,Li Y,Reed EJ.Structural phase transitions in twodimensional Mo-and W-dichalcogenide monolayers.Nat Commun,2014,5:4214
34 Cheng P,Sun K,Hu YH.Memristive behavior and ideal memristor of 1T phase MoS2nanosheets.Nano Lett,2016,16:572-576
35 Lin C,Zhu X,Feng J,et al.Hydrogen-incorporated TiS2ultrathin nanosheets with ultrahigh conductivity for stamp-transferrable electrodes.J Am Chem Soc,2013,135:5144-5151
36 Li LJ,O'Farrell ECT,Loh KP,et al.Controlling many-body states by the electric-field effect in a two-dimensional material.Nature,2016,529:185-189
37 Chen P,Pai WW,Chan YH,et al.Emergence of charge density waves and a pseudogap in single-layer TiTe2.Nat Commun,2017,8:516
38 Li L,Fang X,Zhai T,et al.Electrical transport and high-performance photoconductivity in individual ZrS2nanobelts.Adv Mater,2010,22:4151-4156
39 Mleczko MJ,Zhang C,Lee HR,et al.HfSe2and ZrSe2:Twodimensional semiconductors with native high-κoxides.Sci Adv,2017,3:e1700481
40 Tsipas P,Tsoutsou D,Fragkos S,et al.Massless dirac fermions in ZrTe2semimetal grown on InAs(111)by van der Waals epitaxy.ACS Nano,2018,12:1696-1703
41 Fu L,Wang F,Wu B,et al.Van der Waals epitaxial growth of atomic layered HfS2crystals for ultrasensitive near-infrared phototransistors.Adv Mater,2017,29:1700439
42 Mangelsen S,Naumov PG,Barkalov OI,et al.Large nonsaturating magnetoresistance and pressure-induced phase transition in the layered semimetal HfTe2.Phys Rev B,2017,96:205148
43 Guo Y,Deng H,Sun X,et al.Modulation of metal and insulator states in 2D ferromagnetic VS2by van der Waals interaction engineering.Adv Mater,2017,29:1700715
44 Ji Q,Li C,Wang J,et al.Metallic vanadium disulfide nanosheets as a platform material for multifunctional electrode applications.Nano Lett,2017,17:4908-4916
45 Li J,Zhao B,Chen P,et al.Synthesis of ultrathin metallic MTe2(M=V,Nb,Ta)single-crystalline nanoplates.Adv Mater,2018,30:1801043
46 Wang X,Lin J,Zhu Y,et al.Chemical vapor deposition of trigonal prismatic NbS2monolayers and 3R-polytype few-layers.Nanoscale,2017,9:16607-16611
47 Han JH,Kim HK,Baek B,et al.Activation of the basal plane in two dimensional transition metal chalcogenide nanostructures.JAm Chem Soc,2018,140:13663-13671
48 Calandra M.Phonon-assisted magnetic mott-insulating state in the charge density wave phase of single-layer 1T NbSe2.Phys Rev Lett,2018,121:026401
49 Yoshida M,Ye J,Zhang Y,et al.Extended polymorphism of twodimensional material.Nano Lett,2017,17:5567-5571
50 Wang X,Liu H,Wu J,et al.Chemical growth of 1T-TaS2monolayer and thin films:robust charge density wave transitions and high bolometric responsivity.Adv Mater,2018,30:1800074
51 Shi J,Chen X,Zhao L,et al.Chemical vapor deposition grown wafer-scale 2D tantalum diselenide with robust charge-densitywave order.Adv Mater,2018,30:1804616
52 Miller DC,Mahanti SD,Duxbury PM.Charge density wave states in tantalum dichalcogenides.Phys Rev B,2018,97:045133
53 Fu L,Sun Y,Wu N,et al.Direct growth of MoS2/h-BN heterostructures via a sulfide-resistant alloy.ACS Nano,2016,10:2063-2070
54 Acerce M,Voiry D,Chhowalla M.Metallic 1T phase MoS2nanosheets as supercapacitor electrode materials.Nat Nanotechnol,2015,10:313-318
55 Tongay S,Zhou J,Ataca C,et al.Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors:MoSe2versus MoS2.Nano Lett,2012,12:5576-5580
56 Yu Y,Nam GH,He Q,et al.High phase-purity 1T’-MoS2-and1T’-MoSe2-layered crystals.Nat Chem,2018,10:638-643
57 Sung JH,Heo H,Si S,et al.Coplanar semiconductor-metal circuitry defined on few-layer MoTe2via polymorphic heteroepitaxy.Nat Nanotechnol,2017,12:1064-1070
58 Zhang Q,Xiao Y,Zhang T,et al.Iodine-mediated chemical vapor deposition growth of metastable transition metal dichalcogenides.Chem Mater,2017,29:4641-4644
59 Deng K,Wan G,Deng P,et al.Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2.Nat Phys,2016,12:1105-1110
60 Gao Y,Liu Z,Sun DM,et al.Large-area synthesis of high-quality and uniform monolayer WS2on reusable Au foils.Nat Commun,2015,6:8569
61 Wang QH,Kalantar-Zadeh K,Kis A,et al.Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.Nat Nanotechnol,2012,7:699-712
62 Ma Y,Liu B,Zhang A,et al.Reversible semiconducting-to-metallic phase transition in chemical vapor deposition grown monolayer WSe2and applications for devices.ACS Nano,2015,9:7383-7391
63 Zheng F,Cai C,Ge S,et al.On the quantum spin hall gap of monolayer 1T’-WTe2.Adv Mater,2016,28:4845-4851
64 Wang Y,Liu E,Liu H,et al.Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2.Nat Commun,2016,7:13142
65 Tongay S,Sahin H,Ko C,et al.Monolayer behaviour in bulk ReS2due to electronic and vibrational decoupling.Nat Commun,2014,5:3252
66 Zhong HX,Gao S,Shi JJ,et al.Quasiparticle band gaps,excitonic effects,and anisotropic optical properties of the monolayer distorted 1T diamond-chain structures ReS2and ReSe2.Phys Rev B,2015,92:115438
67 MiróP,Ghorbani-Asl M,Heine T.Two dimensional materials beyond MoS2:Noble-transition-metal dichalcogenides.Angew Chem Int Ed,2014,53:3015-3018
68 Zhao Y,Qiao J,Yu Z,et al.High-electron-mobility and air-stable2D layered PtSe2FETs.Adv Mater,2017,29:1604230
69 Fu L,Hu D,Mendes RG,et al.Highly organized epitaxy of dirac semimetallic PtTe2crystals with extrahigh conductivity and visible surface plasmons at edges.ACS Nano,2018,12:9405-9411
70 Py MA,Haering RR.Structural destabilization induced by lithium intercalation in MoS2and related compounds.Can J Phys,1983,61:76-84
71 Yang D,Sandoval SJ,Divigalpitiya WMR,et al.Structure of single-molecular-layer MoS2.Phys Rev B,1991,43:12053-12056
72 Wang H,Lu Z,Xu S,et al.Electrochemical tuning of vertically aligned MoS2nanofilms and its application in improving hydrogen evolution reaction.Proc Natl Acad Sci USA,2013,110:19701-19706
73 Qi Y,Xu Q,Wang Y,et al.CO2-induced phase engineering:protocol for enhanced photoelectrocatalytic performance of 2DMoS2nanosheets.ACS Nano,2016,10:2903-2909
74 Zhang J,Wu J,Guo H,et al.Unveiling active sites for the hydrogen evolution reaction on monolayer MoS2.Adv Mater,2017,29:1701955
75 Yamaguchi H,Blancon JC,Kappera R,et al.Spatially resolved photoexcited charge-carrier dynamics in phase-engineered monolayer MoS2.ACS Nano,2015,9:840-849
76 Kappera R,Voiry D,Yalcin SE,et al.Phase-engineered low-resistance contacts for ultrathin MoS2transistors.Nat Mater,2014,13:1128-1134
77 Silbernagel BG.Lithium intercalation complexes of layered transition metal dichalcogenides:An NMR survey of physical properties.Solid State Commun,1975,17:361-365
78 Tan C,Luo Z,Chaturvedi A,et al.Preparation of high-percentage1T-phase transition metal dichalcogenide nanodots for electrochemical hydrogen evolution.Adv Mater,2018,30:1705509
79 Tan C,Zhao W,Chaturvedi A,et al.Preparation of single-layer MoS2xSe2(1-x)and MoxW1-xS2nanosheets with high-concentration metallic 1T phase.Small,2016,12:1866-1874
80 Zeng Z,Yin Z,Huang X,et al.Single-layer semiconducting nanosheets:high-yield preparation and device fabrication.Angew Chem Int Ed,2011,50:11093-11097
81 Lai Z,Chaturvedi A,Wang Y,et al.Preparation of 1T’-phase ReS2xSe2(1-x)(x=0-1)nanodots for highly efficient electrocatalytic hydrogen evolution reaction.J Am Chem Soc,2018,140:8563-8568
82 Fan X,Xu P,Zhou D,et al.Fast and efficient preparation of exfoliated 2H MoS2nanosheets by sonication-assisted lithium intercalation and infrared laser-induced 1T to 2H phase reversion.Nano Lett,2015,15:5956-5960
83 Cheng Y,Nie A,Zhang Q,et al.Origin of the phase transition in lithiated molybdenum disulfide.ACS Nano,2014,8:11447-11453
84 Yan S,Qiao W,He X,et al.Enhancement of magnetism by structural phase transition in MoS2.Appl Phys Lett,2015,106:012408
85 Zhao W,Ribeiro RM,Eda G.Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets.Acc Chem Res,2015,48:91-99
86 Yin Y,Han J,Zhang Y,et al.Contributions of phase,sulfur vacancies,and edges to the hydrogen evolution reaction catalytic activity of porous molybdenum disulfide nanosheets.J Am Chem Soc,2016,138:7965-7972
87 Eda G,Yamaguchi H,Voiry D,et al.Photoluminescence from chemically exfoliated MoS2.Nano Lett,2011,11:5111-5116
88 Tan SJR,Abdelwahab I,Ding Z,et al.Chemical stabilization of1T’phase transition metal dichalcogenides with giant optical Kerr nonlinearity.J Am Chem Soc,2017,139:2504-2511
89 Sun L,Yan X,Zheng J,et al.Layer-dependent chemically induced phase transition of two-dimensional MoS2.Nano Lett,2018,18:3435-3440
90 Wang L,Xu Z,Wang W,et al.Atomic mechanism of dynamic electrochemical lithiation processes of MoS2nanosheets.J Am Chem Soc,2014,136:6693-6697
91 Kan M,Wang JY,Li XW,et al.Structures and phase transition of a MoS2monolayer.J Phys Chem C,2014,118:1515-1522
92 Wang X,Shen X,Wang Z,et al.Atomic-scale clarification of structural transition of MoS2upon sodium intercalation.ACSNano,2014,8:11394-11400
93 Zhang R,Tsai IL,Chapman J,et al.Superconductivity in potassium-doped metallic polymorphs of MoS2.Nano Lett,2016,16:629-636
94 Liu Q,Li X,He Q,et al.Gram-scale aqueous synthesis of stable few-layered 1T-MoS2:Applications for visible-light-driven photocatalytic hydrogen evolution.Small,2015,11:5556-5564
95 Liu Q,Li X,Xiao Z,et al.Stable metallic 1T-WS2nanoribbons intercalated with ammonia ions:the correlation between structure and electrical/optical properties.Adv Mater,2015,27:4837-4844
96 Li Y,Duerloo KAN,Wauson K,et al.Structural semiconductorto-semimetal phase transition in two-dimensional materials induced by electrostatic gating.Nat Commun,2016,7:10671
97 Wang Y,Xiao J,Zhu H,et al.Structural phase transition in monolayer MoTe2driven by electrostatic doping.Nature,2017,550:487-491
98 Kim S,Song S,Park J,et al.Long-range lattice engineering of MoTe2by a 2D electride.Nano Lett,2017,17:3363-3368
99 Kang Y,Najmaei S,Liu Z,et al.Plasmonic hot electron induced structural phase transition in a MoS2monolayer.Adv Mater,2014,26:6467-6471
100 Enyashin AN,Yadgarov L,Houben L,et al.New route for stabilization of 1T-WS2and MoS2phases.J Phys Chem C,2011,115:24586-24591
101 Chen Y,Xi J,Dumcenco DO,et al.Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys.ACS Nano,2013,7:4610-4616
102 Lin YC,Dumcenco DO,Huang YS,et al.Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2.Nat Nanotech,2014,9:391-396
103 Suh J,Tan TL,Zhao W,et al.Reconfiguring crystal and electronic structures of MoS2by substitutional doping.Nat Commun,2018,9:199
104 Title RS,Shafer MW.Band structure of the layered transitionmetal dichalcogenides:an experimental study by electron paramagnetic resonance on Nb-doped MoS2.Phys Rev Lett,1972,28:808-810
105 Zhu J,Wang Z,Yu H,et al.Argon plasma induced phase transition in monolayer MoS2.J Am Chem Soc,2017,139:10216-10219
106 Cho S,Kim S,Kim JH,et al.Phase patterning for ohmic homojunction contact in MoTe2.Science,2015,349:625-628
107 Chow PK,Jacobs-Gedrim RB,Gao J,et al.Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides.ACS Nano,2015,9:1520-1527
108 Tosun M,Chan L,Amani M,et al.Air-stable n-doping of WSe2by anion vacancy formation with mild plasma treatment.ACSNano,2016,10:6853-6860
109 Park JC,Yun SJ,Kim H,et al.Phase-engineered synthesis of centimeter-scale 1T’-and 2H-molybdenum ditelluride thin films.ACS Nano,2015,9:6548-6554
110 Keum DH,Cho S,Kim JH,et al.Bandgap opening in few-layered monoclinic MoTe2.Nat Phys,2015,11:482-486
111 Wang Z,Sun YY,Abdelwahab I,et al.Surface-limited superconducting phase transition on 1T-TaS2.ACS Nano,2018,12:12619-12628
112 Song S,Keum DH,Cho S,et al.Room temperature semiconductor-metal transition of MoTe2thin films engineered by strain.Nano Lett,2016,16:188-193
113 Nayak AP,Pandey T,Voiry D,et al.Pressure-dependent optical and vibrational properties of monolayer molybdenum disulfide.Nano Lett,2015,15:346-353
114 Voiry D,Goswami A,Kappera R,et al.Covalent functionalization of monolayered transition metal dichalcogenides by phase engineering.Nat Chem,2014,7:45-49
115 Yang K,Wang X,Li H,et al.Composition-and phase-controlled synthesis and applications of alloyed phase heterostructures of transition metal disulphides.Nanoscale,2017,9:5102-5109
116 Kang K,Xie S,Huang L,et al.High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.Nature,2015,520:656-660
117 Najmaei S,Liu Z,Zhou W,et al.Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers.Nat Mater,2013,12:754-759
118 Ju M,Liang X,Liu J,et al.Universal substrate-trapping strategy to grow strictly monolayer transition metal dichalcogenides crystals.Chem Mater,2017,29:6095-6103
119 Liu L,Wu J,Wu L,et al.Phase-selective synthesis of 1T’MoS2monolayers and heterophase bilayers.Nat Mater,2018,17:1108-1114
120 Zhou L,Xu K,Zubair A,et al.Large-area synthesis of high-quality uniform few-layer MoTe2.J Am Chem Soc,2015,137:11892-11895
121 Zhou L,Zubair A,Wang Z,et al.Synthesis of high-quality largearea homogenous 1T’MoTe2from chemical vapor deposition.Adv Mater,2016,28:9526-9531
122 Yoo Y,DeGregorio ZP,Su Y,et al.In-plane 2H-1T’MoTe2homojunctions synthesized by flux-controlled phase engineering.Adv Mater,2017,29:1605461
123 Chen P,Pai WW,Chan YH,et al.Large quantum-spin-Hall gap in single-layer 1T’WSe2.Nat Commun,2018,9:2003
124 Li S,Wang S,Tang DM,et al.Halide-assisted atmospheric pressure growth of large WSe2and WS2monolayer crystals.Appl Mater Today,2015,1:60-66
125 Chen K,Chen Z,Wan X,et al.A simple method for synthesis of high-quality millimeter-scale 1T’transition-metal telluride and near-field nanooptical properties.Adv Mater,2017,29:1700704