X射线平板探测器背板工艺研究进展
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摘要
从高像素填充因子、低噪声、高帧频、高空间分辨率及柔性五个方面对近些年X射线平板探测器背板工艺的研究进展进行了综述。通过对研究过程中的材料选择、像素结构和读出电路优化的详细阐述,分析了X射线平板探测器背板工艺的研究现状及改善方向。文章同时从新结构、新材料、电路设计及三维探测设计四个方面给出了X射线平板探测背板技术未来的发展趋势。
The recent progresses of the backplane technology of X-ray flat panel detector are reviewed,and the reasearch status of such indexes as high pixel fill factor,low noise,high frame rate,high spatial resolution and flexibility are discussed from the aspects of material,pixel structure,readout circuit and so on.The future trends are also put forward for backplane technology of X-ray flat panel detectors.
The recent progresses of the backplane technology of X-ray flat panel detector are reviewed,and the reasearch status of such indexes as high pixel fill factor,low noise,high frame rate,high spatial resolution and flexibility are discussed from the aspects of material,pixel structure,readout circuit and so on.The future trends are also put forward for backplane technology of X-ray flat panel detectors.
引文
[1]Park J C,Ahn S E.Dynamic properties of flat-panel X-ray image sensors with mercury iodide photoconductors undergoing repeated X-ray irradiation[J].IEEE J.of the Electron Devices Society,2017,5(5):400-403.
[2]沈扬.新型X射线探测设备的探索性研究[D].上海:复旦大学,2011.Shen Yang.Exploratory research on new X-ray detection equipment[D].Shanghai:Fudan University,2011.
[3]王建华.数字平板探测器的原理及应用[J].无损检测,2011,33(10):30-35.Wang Jianhua.Principle and application of flat panel detector[J].Nondestructive Testing,2011,33(10):30-35.
[4]Lee H R,Ellingson W.Characterization of a flat-panel amorphous silicon detector for X-ray computed tomography[J].J.of X-ray Science and Technol.,2001,9(1):43-53.
[5]Park J C,Ahn S E.Dynamic properties of flat-panel X-ray image sensors with mercury iodide photoconductors undergoing repeated X-ray irradiation[J].IEEE J.of the Electron Devices Society,2017,5(5):400-403.
[6]Wang K,Ou H,Chen J.Dual-gate photosensitive thin-film transistor-based active pixel sensor for indirect-conversion Xray imaging[J].IEEE Trans.on Electron Devices,2015,62(9):2894-2899.
[7]Wang K,Ou H,Chen J.Dual-gate photo thin-film transistor:A"smart"pixel for high-resolution and low-dose X-ray imaging[J].J.of Phys.:Conf.Series,2015,619(1):12-23.
[8]Ou H,Wang K,Chen J.Dual-gate photosensitive a-Si∶H thin-film transistor with aπ-shape channel for large-area imaging and sensing[J].IEEE Electron Device Lett.,2015,36(12):1373-1375.
[9]Wang L,Ou H,Chen J,et al.A numerical study of an amorphous silicon dual-gate photo thin-film transistor for lowdose X-ray imaging[J].J.of Display Technol.,2015,11(8):646-651.
[10]Abbaszadeh S,Keshavarzi R,Wang K,et al.(Invited)Indirect conversion digital X-ray imager using an amorphous selenium photoconductor[J].ECS Trans.,2013,53(1):271-279.
[11]Abbaszadeh S,Allec N,Karim K.Characterization of low dark-current lateral amorphous-selenium metal-semiconductormetal photodetectors[J].IEEE Sensors J.,2013,13(5):1452-1458.
[12]Street R A,Wu X D,Weisfield R,et al.Two dimensional amorphous silicon image sensor arrays[J].J.of NonCrystalline Solids,1996,s198/200(96):1151-1154.
[13]Tedde S,Zaus E S,Furst J,et al.Active pixel concept combined with organic photodiode for imaging devices[J].IEEE Electron Device Lett.,2007,28(10):893-895.
[14]Taghibakhsh F,Karim K S.Two-transistor active pixel sensor readout circuits in amorphous silicon technology for high-resolution digital imaging applications[J].IEEE Trans.on Electron Devices,2008,55(8):2121-2128.
[15]Karim K S,Sanaie-Fard G,Ottaviani T,et al.Amplified pixel architectures in amorphous silicon technology for large area digital imaging applications[J].J.Korean Phys.Society,2006,48(1):S85-S91.
[16]Roose F D,Myny K,Steudel S,et al.A flexible thin-film pixel array with a charge-to-current gain of 59lA/pC and0.33%nonlinearity and a cost effective readout circuit for large-area X-ray imaging[C]//IEEE Inter.Solid-State Circuits Conf.,2016:296-297.
[17]Fukumoto E,Arai T,Morosawa N,et al.High-mobility oxide TFT for circuit integration of AMOLEDs[J].J.of the Society for Information Display,2012,19(12):867-872.
[18]Cheng M H,Zhao C,Huang C L,et al.Amorphous InSnZnO thin-film transistor voltage-mode active pixel sensor circuits for indirect X-ray imagers[J].IEEE Trans.on Electron Devices,2016,63(12):4802-4810.
[19]Cheng M H,Zhao C,Kanicki J.Study of current-mode active pixel sensor circuits using amorphous InSnZnO thinfilm transistor for 50-μm pixel-pitch indirect X-ray imagers[J].Solid-State Electron.,2017,131:53-64.
[20]Wei Y C,Li Y C,Lee I C,et al.Dimension dependent immunity of X-ray irradiation on low-temperature polycrystalline-silicon TFTs[J].Jap.J.of Appl.Phys.,2017,56:06GF07.
[21]Tai Y H,Huang S C,Su K C,et al.Variation and mismatch effects of the low-temperature poly-Si TFTs on the circuit for the X-ray active matrix sensor[J].Solid-State Electrons,2008,52(5):649-656.
[22]Dimova-Malinovska D,Angelov O,Sendova-Vassileva M,et al.Polycrystalline silicon thin films on glass substrate[J].Thin Solid Films,2004,451/452(6):303-307.
[23]Kong C,Choi N,Jung M,et al.Image quality evaluation of CsI∶Tl and Gd2O2S detectors in the indirect-conversion DR system[J].J.of the Korean Society of Radiology,2017,11(1):27-35.
[24]Kabir M Z,Chowdhury L,Decrescenzo G,et al.Effect of repeated X-ray exposure on the resolution of amorphous selenium based X-ray imagers[J].Medical Phys.,2010,37(3):1339-1349.
[25]Büchele P,Richter M,Tedde S F,et al.X-ray imaging with scintillator-sensitized hybrid organic photodetectors[J].Nature Photon.,2015,27:475-501.
[26]Zhao C,Kanicki J.Amorphous In-Ga-Zn-O thin-film transistor active pixel sensor X-ray imager for digital breast tomosynthesis[J].Med.Phys.,2014,41(9):091902-1-14.
[27]Dhilippan M,Panneerselvam M,Kabir Z.Evaluation of organic perovskite photoconductors for direct conversion Xray imaging detectors[J].J.of Mater.Science:Mater.in Electron.,2017,28(10):7083-7090.
[28]Kuo T T,Wu C M,Lu H H,et al.Flexible X-ray imaging detector based on direct conversion in amorphous selenium[J].J.of Vac.Sci.&Technol.A Vacuum Surfaces&Films,2014,32(4):041507-041507-5.
[29]Sun H,Zhao B,Yang D,et al.Flexible X-ray detector based on sliced lead iodide crystal[J].Phys.Status Solidi(RRL)-Rapid Research Lett.,2017,11(2):1-9.
[2]沈扬.新型X射线探测设备的探索性研究[D].上海:复旦大学,2011.Shen Yang.Exploratory research on new X-ray detection equipment[D].Shanghai:Fudan University,2011.
[3]王建华.数字平板探测器的原理及应用[J].无损检测,2011,33(10):30-35.Wang Jianhua.Principle and application of flat panel detector[J].Nondestructive Testing,2011,33(10):30-35.
[4]Lee H R,Ellingson W.Characterization of a flat-panel amorphous silicon detector for X-ray computed tomography[J].J.of X-ray Science and Technol.,2001,9(1):43-53.
[5]Park J C,Ahn S E.Dynamic properties of flat-panel X-ray image sensors with mercury iodide photoconductors undergoing repeated X-ray irradiation[J].IEEE J.of the Electron Devices Society,2017,5(5):400-403.
[6]Wang K,Ou H,Chen J.Dual-gate photosensitive thin-film transistor-based active pixel sensor for indirect-conversion Xray imaging[J].IEEE Trans.on Electron Devices,2015,62(9):2894-2899.
[7]Wang K,Ou H,Chen J.Dual-gate photo thin-film transistor:A"smart"pixel for high-resolution and low-dose X-ray imaging[J].J.of Phys.:Conf.Series,2015,619(1):12-23.
[8]Ou H,Wang K,Chen J.Dual-gate photosensitive a-Si∶H thin-film transistor with aπ-shape channel for large-area imaging and sensing[J].IEEE Electron Device Lett.,2015,36(12):1373-1375.
[9]Wang L,Ou H,Chen J,et al.A numerical study of an amorphous silicon dual-gate photo thin-film transistor for lowdose X-ray imaging[J].J.of Display Technol.,2015,11(8):646-651.
[10]Abbaszadeh S,Keshavarzi R,Wang K,et al.(Invited)Indirect conversion digital X-ray imager using an amorphous selenium photoconductor[J].ECS Trans.,2013,53(1):271-279.
[11]Abbaszadeh S,Allec N,Karim K.Characterization of low dark-current lateral amorphous-selenium metal-semiconductormetal photodetectors[J].IEEE Sensors J.,2013,13(5):1452-1458.
[12]Street R A,Wu X D,Weisfield R,et al.Two dimensional amorphous silicon image sensor arrays[J].J.of NonCrystalline Solids,1996,s198/200(96):1151-1154.
[13]Tedde S,Zaus E S,Furst J,et al.Active pixel concept combined with organic photodiode for imaging devices[J].IEEE Electron Device Lett.,2007,28(10):893-895.
[14]Taghibakhsh F,Karim K S.Two-transistor active pixel sensor readout circuits in amorphous silicon technology for high-resolution digital imaging applications[J].IEEE Trans.on Electron Devices,2008,55(8):2121-2128.
[15]Karim K S,Sanaie-Fard G,Ottaviani T,et al.Amplified pixel architectures in amorphous silicon technology for large area digital imaging applications[J].J.Korean Phys.Society,2006,48(1):S85-S91.
[16]Roose F D,Myny K,Steudel S,et al.A flexible thin-film pixel array with a charge-to-current gain of 59lA/pC and0.33%nonlinearity and a cost effective readout circuit for large-area X-ray imaging[C]//IEEE Inter.Solid-State Circuits Conf.,2016:296-297.
[17]Fukumoto E,Arai T,Morosawa N,et al.High-mobility oxide TFT for circuit integration of AMOLEDs[J].J.of the Society for Information Display,2012,19(12):867-872.
[18]Cheng M H,Zhao C,Huang C L,et al.Amorphous InSnZnO thin-film transistor voltage-mode active pixel sensor circuits for indirect X-ray imagers[J].IEEE Trans.on Electron Devices,2016,63(12):4802-4810.
[19]Cheng M H,Zhao C,Kanicki J.Study of current-mode active pixel sensor circuits using amorphous InSnZnO thinfilm transistor for 50-μm pixel-pitch indirect X-ray imagers[J].Solid-State Electron.,2017,131:53-64.
[20]Wei Y C,Li Y C,Lee I C,et al.Dimension dependent immunity of X-ray irradiation on low-temperature polycrystalline-silicon TFTs[J].Jap.J.of Appl.Phys.,2017,56:06GF07.
[21]Tai Y H,Huang S C,Su K C,et al.Variation and mismatch effects of the low-temperature poly-Si TFTs on the circuit for the X-ray active matrix sensor[J].Solid-State Electrons,2008,52(5):649-656.
[22]Dimova-Malinovska D,Angelov O,Sendova-Vassileva M,et al.Polycrystalline silicon thin films on glass substrate[J].Thin Solid Films,2004,451/452(6):303-307.
[23]Kong C,Choi N,Jung M,et al.Image quality evaluation of CsI∶Tl and Gd2O2S detectors in the indirect-conversion DR system[J].J.of the Korean Society of Radiology,2017,11(1):27-35.
[24]Kabir M Z,Chowdhury L,Decrescenzo G,et al.Effect of repeated X-ray exposure on the resolution of amorphous selenium based X-ray imagers[J].Medical Phys.,2010,37(3):1339-1349.
[25]Büchele P,Richter M,Tedde S F,et al.X-ray imaging with scintillator-sensitized hybrid organic photodetectors[J].Nature Photon.,2015,27:475-501.
[26]Zhao C,Kanicki J.Amorphous In-Ga-Zn-O thin-film transistor active pixel sensor X-ray imager for digital breast tomosynthesis[J].Med.Phys.,2014,41(9):091902-1-14.
[27]Dhilippan M,Panneerselvam M,Kabir Z.Evaluation of organic perovskite photoconductors for direct conversion Xray imaging detectors[J].J.of Mater.Science:Mater.in Electron.,2017,28(10):7083-7090.
[28]Kuo T T,Wu C M,Lu H H,et al.Flexible X-ray imaging detector based on direct conversion in amorphous selenium[J].J.of Vac.Sci.&Technol.A Vacuum Surfaces&Films,2014,32(4):041507-041507-5.
[29]Sun H,Zhao B,Yang D,et al.Flexible X-ray detector based on sliced lead iodide crystal[J].Phys.Status Solidi(RRL)-Rapid Research Lett.,2017,11(2):1-9.