硅波导拉曼增益的优化
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摘要
硅波导尺寸与波导的有效模场面积成正比关系,减小有效模场面积有助于提高拉曼增益,但模场面积的减小会导致自由载流子吸收效应的加强,自由载流子吸收效应的加强又会降低拉曼增益。通过研究波导尺寸与硅波导拉曼增益之间的关系,进而得出合适的波导尺寸有助于拉曼增益的提高。
The size of the silicon waveguide is proportional to its effective mode field area,while the decreasing of the area may help to increase the Raman gain.The area reduction may strengthen the free carrier absorption but decrease the Raman gain.By studying the relationship between the size of the silicon waveguide and Raman gain,we study how to improve the Raman gain with a suitable waveguide dimensions.
The size of the silicon waveguide is proportional to its effective mode field area,while the decreasing of the area may help to increase the Raman gain.The area reduction may strengthen the free carrier absorption but decrease the Raman gain.By studying the relationship between the size of the silicon waveguide and Raman gain,we study how to improve the Raman gain with a suitable waveguide dimensions.
引文
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[2]R A Soref.The past present and future of silicon photonics[J].IEEE J.Sel.Topics Quantum Electron.,2006,12(6):1678-1687.
[3]D Miller.Device requirements for optical interconnects to silicon chips[J].Proc.IEEE,2009,97:1166-1185.
[4]B Jalali,V Ragunathan,D Dimitropoulus,et al.Raman-based silicon photonics[J].IEEE J.Sel.Topics Quantum Electron.,2006,12:412-421.
[5]D Dimitropoulos,R Jhaveri,R Claps,et al.Lifetime of photo generated carriers in silicon on-insulator rib waveguides[J].Appl.Phys.Lett.,2005,86:71-115.
[6]Q Xu,V R Almeida,M Lipson.Demonstration of high Raman gain in a submicrometer-size silicon-oninsulator waveguide[J].Opt.Lett.,2005,30:35-37.
[7]I Rukhlenko,M Premaratne,G P Agrawal.Nonlinear silicon photonics:analytical tools[J].IEEE J.Sel.Topics Quantum Electron.,2010,16:200-215.