基于X射线的晶圆级器件辐照与辐射效应参数提取设备的设计与实现
|
摘要
基于标准工艺线的设计加固是大规模集成电路抗辐射加固的发展趋势,对微纳米单元器件进行辐射效应参数提取是实现设计加固的前提。为了摒除参数提取过程中封装引入的影响,实现在线参数测试,本文设计了一套晶圆级器件辐照与辐射效应参数提取试验装置,兼备晶圆级器件电离总剂量辐照、器件参数在线测试分析功能,并且具有通用性强、测量范围宽、结构一体化、操作自动化等特点。对设备在50 kV管压下产生的X射线能谱、剂量率、束斑的测量以及对晶圆级MOS器件进行I-V、C-V、低频噪声特性的测试分析结果表明,该设备符合ASTM F1467测试标准,且能满足晶圆级器件辐射效应参数提取要求,可为大规模集成电路抗辐射设计加固提供良好的试验条件。
The design of radiation hardening large scale integrated circuit based on the standard process is the development tendency in the future. Extracting the radiation effect parameters of the nano device is the foundation of improvement of the radiation hardening. In order to eliminate the influence introduced by encapsulation in the parameter extraction process,a set of equipment for irradiation parameters extraction of wafer level device was designed,which could realize the function of online X-ray irradiation and online parameter test and analysis with the advantage of strong commonality,wide measuring range. The X-ray energy spectra,dose rate,beam uniformity were measured with the tube voltage of 50 kV,as well as I-V,C-V and low frequency noise characteristics of the wafer level MOS device were test and analysis. The experiment results show that the equipment can satisfy the standard of ASTM F1467 test,and meet the requirements of the radiation effect parameters extraction of the wafer level device. The equipment can provide a good test condition for the design of radiation hardening large scale integrated circuit.
The design of radiation hardening large scale integrated circuit based on the standard process is the development tendency in the future. Extracting the radiation effect parameters of the nano device is the foundation of improvement of the radiation hardening. In order to eliminate the influence introduced by encapsulation in the parameter extraction process,a set of equipment for irradiation parameters extraction of wafer level device was designed,which could realize the function of online X-ray irradiation and online parameter test and analysis with the advantage of strong commonality,wide measuring range. The X-ray energy spectra,dose rate,beam uniformity were measured with the tube voltage of 50 kV,as well as I-V,C-V and low frequency noise characteristics of the wafer level MOS device were test and analysis. The experiment results show that the equipment can satisfy the standard of ASTM F1467 test,and meet the requirements of the radiation effect parameters extraction of the wafer level device. The equipment can provide a good test condition for the design of radiation hardening large scale integrated circuit.
引文
[1]何君.微电子器件的抗辐射加固技术[J].半导体情报,2001,38(2):19-23,30.HE J.Radiation-hardened technologies of microelectronic devices[J].Semicond.Inf.,2001,38(2):19-23,30.(in Chinese)
[2]TARUI Y,RYOKAWA I,KIMURA M,et al..X band low-cost Ga N TR module with anti-radiation structure[C].Proceedings of 2016 IEEE MTT-S International on Microwave Symposium(IMS),San Francisco,USA,2016:1-4.
[3]GANIYEV S,MURIDAN N,HASBULLAH N F,et al..Electrical simulation of Ni/4H-Si C Schottky diodes before and after low energy electron radiation[C].Proceedings of 2015 IEEE Regional Symposium on Micro and Nanoelectronics(RSM),Kuala Terengganu,Malaysia,2015:1-4.
[4]TIAN L,MIAO T L,WANGH,et al..Design of anti-radiation CMOS pixel on SOI wafer[C].Proceedings of the 2012IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT),Xi'an,China,2012:1-3.
[5]BUSHUEVA O,VIALLON C,GHANNAM A,et al..On-wafer measurement errors due to unwanted radiations on High-Q inductors[J].IEEE Trans.Microwave Theory Technol.,2016,64(9):2905-2911.
[6]陈雪薇.氧化铪MIS器件C-V特性及辐照效应研究[D].西安:西安电子科技大学,2014.CHEN X W.Study on C-V Characteristics and Radiation Effect of Hafnium Oxide MIS Structure[D].Xi'an:Xidian University,2014.(in Chinese)
[7]熊海,孔学东,章晓文.MOS结构电容高频C-V特性的应用[J].半导体技术,2010,35(1):94-98.XIONG H,KONG X D,ZHANG X W.Application of high frequency capacitance-voltage characterization of MOS structure[J].Semicond.Technol.,2010,35(1):94-98.(in Chinese)
[8]席善斌,陆妩,王志宽,等.中带电压法分离栅控横向PNP双极晶体管辐照感生缺陷[J].物理学报,2012,61(7):076101-1-6.XI S B,LU W,WANG Z K,et al..Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral PNP bipolar transistors[J].Acta Phys.Sinica,2012,61(7):076101-1-6.(in Chinese)
[9]何玉娟,师谦,李斌,等.MOS器件界面态与陷阱电荷分离方法研究[J].电子产品可靠性与环境试验,2006,24(4):26-29.HE Y J,SHI Q,LI B,et al..Oxide-trap and interface-trap charge separation analysis techniques on MOSFET[J].Electron.Prod.Reliab.Environ.Test.,2006,24(4):26-29.(in Chinese)
[10]刘远,陈海波,何玉娟,等.电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响[J].物理学报,2015,64(7):078501-1-6.LIU Y,CHEN H B,HE Y J,et al..Radiation eects on the low frequency noise in partially depleted silicon on insulator transistors[J].Acta Phys.Sinica,2015,64(7):078501-1-6.(in Chinese)
[11]彭绍泉.Si O2介质材料辐照损伤-噪声测试结构研究[D].西安:西安电子科技大学,2008.PENG S Q.Research on Radiation-damage-noise Test Structures of Si O2Dielectric Material[D].Xi’an:Xidian University,2008.(in Chinese)
[12]谷懿,熊盛青,葛良全,等.微型X射线管出射谱特征研究及Be窗厚度确定[J].光谱学与光谱分析,2014,34(1):252-256.GU Y,XIONG S Q,GE L Q,et al..Research on spectral characteristic of miniature X-ray tube and determination of beryllium window thickness[J].Spectrosc.Spect.Anal.,2014,34(1):252-256.(in Chinese)
[13]李兵.诊断X射线空气比释动能的绝对测量研究[D].成都:成都理工大学,2013.LI B.The Research of Absolute Measurement of Air Kerm in The Diagnostic X-ray[D].Chengdu:Chengdu University of Technology,2013.(in Chinese)
[2]TARUI Y,RYOKAWA I,KIMURA M,et al..X band low-cost Ga N TR module with anti-radiation structure[C].Proceedings of 2016 IEEE MTT-S International on Microwave Symposium(IMS),San Francisco,USA,2016:1-4.
[3]GANIYEV S,MURIDAN N,HASBULLAH N F,et al..Electrical simulation of Ni/4H-Si C Schottky diodes before and after low energy electron radiation[C].Proceedings of 2015 IEEE Regional Symposium on Micro and Nanoelectronics(RSM),Kuala Terengganu,Malaysia,2015:1-4.
[4]TIAN L,MIAO T L,WANGH,et al..Design of anti-radiation CMOS pixel on SOI wafer[C].Proceedings of the 2012IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT),Xi'an,China,2012:1-3.
[5]BUSHUEVA O,VIALLON C,GHANNAM A,et al..On-wafer measurement errors due to unwanted radiations on High-Q inductors[J].IEEE Trans.Microwave Theory Technol.,2016,64(9):2905-2911.
[6]陈雪薇.氧化铪MIS器件C-V特性及辐照效应研究[D].西安:西安电子科技大学,2014.CHEN X W.Study on C-V Characteristics and Radiation Effect of Hafnium Oxide MIS Structure[D].Xi'an:Xidian University,2014.(in Chinese)
[7]熊海,孔学东,章晓文.MOS结构电容高频C-V特性的应用[J].半导体技术,2010,35(1):94-98.XIONG H,KONG X D,ZHANG X W.Application of high frequency capacitance-voltage characterization of MOS structure[J].Semicond.Technol.,2010,35(1):94-98.(in Chinese)
[8]席善斌,陆妩,王志宽,等.中带电压法分离栅控横向PNP双极晶体管辐照感生缺陷[J].物理学报,2012,61(7):076101-1-6.XI S B,LU W,WANG Z K,et al..Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral PNP bipolar transistors[J].Acta Phys.Sinica,2012,61(7):076101-1-6.(in Chinese)
[9]何玉娟,师谦,李斌,等.MOS器件界面态与陷阱电荷分离方法研究[J].电子产品可靠性与环境试验,2006,24(4):26-29.HE Y J,SHI Q,LI B,et al..Oxide-trap and interface-trap charge separation analysis techniques on MOSFET[J].Electron.Prod.Reliab.Environ.Test.,2006,24(4):26-29.(in Chinese)
[10]刘远,陈海波,何玉娟,等.电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响[J].物理学报,2015,64(7):078501-1-6.LIU Y,CHEN H B,HE Y J,et al..Radiation eects on the low frequency noise in partially depleted silicon on insulator transistors[J].Acta Phys.Sinica,2015,64(7):078501-1-6.(in Chinese)
[11]彭绍泉.Si O2介质材料辐照损伤-噪声测试结构研究[D].西安:西安电子科技大学,2008.PENG S Q.Research on Radiation-damage-noise Test Structures of Si O2Dielectric Material[D].Xi’an:Xidian University,2008.(in Chinese)
[12]谷懿,熊盛青,葛良全,等.微型X射线管出射谱特征研究及Be窗厚度确定[J].光谱学与光谱分析,2014,34(1):252-256.GU Y,XIONG S Q,GE L Q,et al..Research on spectral characteristic of miniature X-ray tube and determination of beryllium window thickness[J].Spectrosc.Spect.Anal.,2014,34(1):252-256.(in Chinese)
[13]李兵.诊断X射线空气比释动能的绝对测量研究[D].成都:成都理工大学,2013.LI B.The Research of Absolute Measurement of Air Kerm in The Diagnostic X-ray[D].Chengdu:Chengdu University of Technology,2013.(in Chinese)