不同激光能量涨落对GaAs光电导开关时间抖动的影响
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摘要
结合激光能量涨落对输出电脉冲涨落影响的实验,通过理论分析研究了激光能量涨落对GaAs光电导开关时间抖动特性的影响。实验中,当外加偏置电压为2 kV时,使用波长为1 053 nm、脉宽为500 ps的激光触发GaAs光电导开关,在不同的激光能量下测试能量涨落对输出电脉冲涨落的影响,通过对比分析指出激光能量的涨落与输出电脉冲涨落成正比关系。结合对光生载流子输运过程的分析,结果表明随着激光能量涨落的增加, GaAs光电导开关时间抖动也会随之增加,直到激光能量达到GaAs饱和吸收限时,能量的涨落不会再引起开关时间抖动的迅速变化。这一结论为GaAs光电导开关应用于条纹相机中提供了理论基础。
Based on the experiment of influence of laser energy fluctuation on output electric pulse fluctuation, the influence of laser energy fluctuation on the jitter time of GaAs photoconductive switch was investigated theoretically. In the experiment, GaAs photoconductive switch was triggered using the wavelength of 1 053 nm and the pulse width of 500 ps laser pulse under the condition of 2 kV bias voltage. The influence of laser energy fluctuation on the output electrical pulse fluctuation was investigated. It is shown that the fluctuation of the laser energy is proportional to the output electrical pulse fluctuation through the contrast analysis. At the same time, it is pointed out that the jitter time of GaAs photoconductive switch increases with the increase of laser energy fluctuation through the analysis of the carrier transport. The fluctuation of energy does not cause the rapid change of switching jitter time with the increase of laser power fluctuation. GaAs photoconductive switch will also increase the zone of timing jitter until the energy reaches GaAs saturated absorption limit.
Based on the experiment of influence of laser energy fluctuation on output electric pulse fluctuation, the influence of laser energy fluctuation on the jitter time of GaAs photoconductive switch was investigated theoretically. In the experiment, GaAs photoconductive switch was triggered using the wavelength of 1 053 nm and the pulse width of 500 ps laser pulse under the condition of 2 kV bias voltage. The influence of laser energy fluctuation on the output electrical pulse fluctuation was investigated. It is shown that the fluctuation of the laser energy is proportional to the output electrical pulse fluctuation through the contrast analysis. At the same time, it is pointed out that the jitter time of GaAs photoconductive switch increases with the increase of laser energy fluctuation through the analysis of the carrier transport. The fluctuation of energy does not cause the rapid change of switching jitter time with the increase of laser power fluctuation. GaAs photoconductive switch will also increase the zone of timing jitter until the energy reaches GaAs saturated absorption limit.
引文
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[2] SHI W,JIANG H,LI M X,et al..Investigation of electric field threshold of GaAs photoconductive semiconductor switch triggered by 1.6 μJ laser diode [J].Appl.Phys.Lett.,2014,104(4):042108-1-3.
[3] CUI H J,YANG H C,XU J,et al..Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch [J].Chin.Phys.B,2017,26(1):017804-1-5.
[4] VERGNE B,COUDERC V,LEVEQUE P.A 30-kHz monocycle generator using linear photoconductive switches and a microchip laser [J].IEEE Photonics Technol.Lett.,2008,24(20):2132-2134.
[5] YALANDIN M I,SHARYPOV K A,SHPAK V G,et al..A picosecond-jitter electron-beam-triggered high-voltage gas spark gap [J].IEEE Trans.Dielectr.Electr.Insulat.,2010,17(1):34-38.
[6] CASTAGNO S,CURRY R D,LOREE E.Analysis and comparison of a fast turn-on series IGBT stack and high-voltage-rated commercial IGBTS [J].IEEE Trans.Plasma Sci.,2006,34(5):1692-1696.
[7] LARSSON J,CHANG Z,JUDD E,et al..Ultrafast X-ray diffraction using a streak-camera detector in averaging mode [J].Opt.Lett.,1997,22(13):1012-1014.
[8] LIU J Y,WANG J,SHAN B,et al..X-ray streak camera with 30-fs timing jitter [C].Proceedings of SPIE 5194,Fourth-Generation X-Ray Sources and Ultrafast X-Ray Detectors,San Diego,2003:123-127.
[9] SHI W,GUI H M,ZHANG L,et al..Effects of trigger laser pulse width on the jitter time of GaAs photoconductive semiconductor switch [J].Opt.Lett.,2013,38(13):2330-2332.
[10] SHI W,GUI H M,ZHANG L,et al..Influence of the incident laser pulse energy on jitter time of GaAs photoconductive semiconductor switches [J].Opt.Lett.,2013,38(21):4339-4341.
[11] GUI H M,SHI W,MA C,et al..The jitter time of GaAs photoconductive switch triggered by 532- and 1 064-nm laser pulse [J].IEEE Photonics Technol.Lett.,2015,27(19):2001-2003.
[12] GAUDET J A,SKIPPER M C,ABDALLA M D,et al..Temporal switching jitter in photoconductive switches [C].Proceedings of SPIE 4031,Intense Microwave Pulses Ⅶ,Orlando,FL,2000:121-124.
[13] SHI W,ZHANG L,GUI H M,et al..Accurate measurement of the jitter time of GaAs photoconductive semiconductor switches triggered by a one-to-two optical fiber [J].Appl.Phys.Lett.,2013,102(15):154106-1-3.