富铟磷化铟晶体中铟夹杂物基体特征分析
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摘要
对富铟磷化铟(InP)晶体中铟夹杂物的基体特征进行了分析和表征。在富铟熔体中制备了InP单晶,利用金相显微镜及红外透射显微镜研究InP晶体中的铟夹杂物形态及其基体周围的影响区的形成。研究发现在铟夹杂物周围的InP基体上存在一些轮廓线。基于铟夹杂物的形成过程和其对周围InP基体的影响,分析了铟夹杂物及其周围轮廓线的形成机理。通过位错腐蚀发现,铟夹杂物周围的InP基体上存在高的位错区,沿着晶体生长方向的位错密度偏高。通过力学分析发现,这种位错分布不均匀主要是由于富铟熔体结晶过程中沿着温度梯度方向的体积膨胀较大所致。
Matrix characteristics of indium inclusions in In-rich indium phosphide(InP) crystals were analyzed and characterized. InP single crystals were prepared in indium-rich melt, then the morphology of indium inclusions in InP crystals and the formation of its affected zone around the matrix were studied by metallurgical microscope and infrared transmission microscope. It is found that contours are formed in the InP matrix around indium inclusions. Based on the crystallization process of indium inclusions and its influence on the InP matrix around, the formation mechanism of indium inclusions and the contours around it was analyzed. By dislocation corrosion, it is found that there is a high dislocation area on the InP matrix around the indium inclusions, and the dislocation density along the direction of crystal growth is higher. Through mechanical analysis, it is found that the uneven dislocation distribution is mainly due to the larger volume expansion along the temperature gradient during the crystallization of indium-rich melt.
Matrix characteristics of indium inclusions in In-rich indium phosphide(InP) crystals were analyzed and characterized. InP single crystals were prepared in indium-rich melt, then the morphology of indium inclusions in InP crystals and the formation of its affected zone around the matrix were studied by metallurgical microscope and infrared transmission microscope. It is found that contours are formed in the InP matrix around indium inclusions. Based on the crystallization process of indium inclusions and its influence on the InP matrix around, the formation mechanism of indium inclusions and the contours around it was analyzed. By dislocation corrosion, it is found that there is a high dislocation area on the InP matrix around the indium inclusions, and the dislocation density along the direction of crystal growth is higher. Through mechanical analysis, it is found that the uneven dislocation distribution is mainly due to the larger volume expansion along the temperature gradient during the crystallization of indium-rich melt.
引文
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[2] JELEN C,SLIVKEN S,DAVID T,et al.Noise perfor-mance of InGaAs-InP quantum-well infrared photodetectors [J].IEEE Journal of Quantum Electronics,1998,34 (7):1124-1128.
[3] 孙聂枫,毛陆虹,郭维廉,等.半绝缘InP长单晶的生长 [J].半导体学报,2007,28 (增刊1):186-189.SUN N F,MAO L H,GUO W L,et al.Semi-insulating long InP single crystal growth [J].Chinese Journal of Semiconductors,2007,28 (z1):186-189(in Chinese).
[4] RUDOLPH P.Non-stoichiometry related defects at the melt growth of semiconductor compound crystals—a review [J].Crystal Research & Technology,2003,38 (7/8):542-554.
[5] XU Y D,HE Y H,WANG T,et al.Investigation of Te inclusion induced glides and the corresponding dislocations in CdZnTe crystal [J].CrystEngComm,2011,14 (2):417-420.
[6] XU Y D,JIE W Q,WANG T,et al.Morphology evolution of micron-scale secondary phases in CdZnTe crystals grown by vertical Bridgman method [J].Journal of Alloys & Compounds,2011,509 (5):2338-2342.
[7] NAGAOKA A,HAN K B,MISRA S,et al.Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method [J].Journal of Crystal Growth,2017,467:6-11.
[8] WANG S J,SUN N F,GAO L J,et al.Investigation of morphology evolution of the In-rich inclusions and the corresponding defects in InP single crystals [J].Crystal Research & Technology,2015,50 (8):668-675.
[9] WANG S J,SUN N F,GAO L J,et al.Morphology of second-phase particles and pores in InP substrates and their elimination by a rapid in situ P injection before crystal growth [J].Physica Status Solidi:b,2016,253 (4):654-658.
[10] 孙士文.碲锌镉单晶生长与晶体质量研究 [D].上海:中国科学院研究生院(上海技术物理研究所),2014.
[11] 孙聂枫.InP晶体合成、生长和特性[D].天津:天津大学,2008.
[12] MIYAZAKI N,KURODA Y.Finite element analysis of dislocation density during bulk single crystal growth (effect of doping atoms in InP single crystal) [J].Journal of Crystal Growth,1999,169 (1):62-66.
[13] 王阳.磷化铟材料的热稳定性研究[D].天津:河北工业大学,2012.