气相辅助电沉积法低温制备CH_3NH_3PbI_3钙钛矿薄膜的研究
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  • 英文篇名:Preparation of Perovskite CH_3NH_3PbI_3 Thin Films By Vapor-Assisted Electro-deposition at Low Temperature
  • 作者:涂丽敏 ; 郭巧能 ; 江亚晓 ; 李海涛 ; 李少华 ; 李文标 ; 潘玲 ; 陈永生 ; 杨仕娥
  • 英文作者:TU Li-min;GUO Qiao-neng;JIANG Ya-xiao;LI Hai-tao;LI Shao-hua;LI Wen-biao;PAN Ling;CHEN Yong-sheng;YANG Shi-e;Key Laboratory of Materials Physics of Ministry of Education,School of Physics and Engineering,Zhengzhou University;
  • 关键词:CH3NH3PbI3薄膜 ; 气相辅助电沉积法 ; 低温 ; 大面积
  • 英文关键词:CH3NH3PbI3 thin film;;vapor-assisted electro-deposition(VAED);;low temperature;;large area
  • 中文刊名:RGJT
  • 英文刊名:Journal of Synthetic Crystals
  • 机构:郑州大学物理工程学院材料物理教育部重点实验室;
  • 出版日期:2018-02-15
  • 出版单位:人工晶体学报
  • 年:2018
  • 期:v.47;No.232
  • 基金:国家自然科学基金(11372283,61574129);; 河南省基础与前沿计划项目(152300410035)
  • 语种:中文;
  • 页:RGJT201802012
  • 页数:7
  • CN:02
  • ISSN:11-2637/O7
  • 分类号:73-78+91
摘要
采用低成本的气相辅助电沉积方法(vapor-assisted electro-deposition,VAED)成功制备了面积为15 cm~2均匀致密的钙钛矿薄膜。首先通过电化学沉积制备PbO_2薄膜,然后与HI气体反应得到PbI_2薄膜,接下来再与HI和CH3NH2混合气体反应,得到CH_3NH_3PbI_3薄膜。实验发现:电化学沉积电压对PbO_2薄膜的表面形貌和微结构有重要影响;在PbO_2向PbI_2的转化过程中,随着反应时间的减小,PbI_2的结晶性逐渐增强,最佳反应时间为10 min;在钙钛矿的转化过程中,当HI/CH_3NH_2体积比为1∶2时可获得均匀致密、四方相的钙钛矿薄膜。本研究提供了一种低温制备大面积均匀CH_3NH_3PbI_3薄膜的方法,得到的CH_3NH_3PbI_3薄膜可望在光电器件中得到应用。
        A uniformly dense perovskite film with an area of 15 cm~2 was successfully prepared by low-cost vapor-assisted electro-deposition( VAED). Firstly,PbO_2 film was prepared by electro-deposition and then reacted with HI gas to obtain PbI_2 film,and then reacted with HI and CH3 NH2 mixed gas to obtain CH_3NH_3PbI_3 film. The experimental results show that the electro-deposition voltage had an important influence on the surface morphology and microstructure of PbO_2 films. During the conversion of PbO_2 to PbI_2,the crystallinity of PbI_2 gradually increased with the decrease of reaction time,and the optimum reaction time was 10 min; In the process of perovskite conversion,a uniform and compact perovskite film with cube phase can be obtained when the volume ratio of HI/CH_3NH_2 was 1 ∶ 2. This study provided a preparation method of large-area CH_3NH_3PbI_3 films in a low-temperature way, and the obtained CH_3NH_3PbI_3 thin films was expected to be used in optoelectronic devices.
引文
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