同质界面浓度对P型Bi_(0.5)Sb_(1.5)Te_3合金热电性能的影响
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摘要
界面对材料的电声输运性能具有明显的调控作用。基于此,探究了同质界面浓度对P型Bi_(0.5)Sb_(1.5)Te_3合金热电性能的影响。结果表明:随着同质界面浓度的增大,材料的电导率降低,Seebeck系数增大;界面浓度增加强化了对声子的散射,故热导率降低;经1min粉碎的烧结样品具有更优的高温电学性能,故其高温端热电性能更优。
The interface has a significant regulatory effect on the electroacoustic transport properties of the material.Therefore,the effect of homogeneous interface density on thermoelectric performance of P-type Bi_(0.5)Sb_(1.5)Te_3 alloy was investigated.The results show that the electrical conductivity of the alloy decreases and Seebeck coefficient increases with the increase of homogeneous interface density.Meanwhile,the thermal conductivity decreases attributed to the enhanced scattering of phonons by increasing homogeneous interface density.Because the sintered sample prepared by pulverizing for 1 min has the optimal electrical properties,it has excellent thermoelectric performance in the high temperature range.
The interface has a significant regulatory effect on the electroacoustic transport properties of the material.Therefore,the effect of homogeneous interface density on thermoelectric performance of P-type Bi_(0.5)Sb_(1.5)Te_3 alloy was investigated.The results show that the electrical conductivity of the alloy decreases and Seebeck coefficient increases with the increase of homogeneous interface density.Meanwhile,the thermal conductivity decreases attributed to the enhanced scattering of phonons by increasing homogeneous interface density.Because the sintered sample prepared by pulverizing for 1 min has the optimal electrical properties,it has excellent thermoelectric performance in the high temperature range.
引文
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[2]YU Y,HE D S,ZHANG S,et al.Simultaneous optimization of electrical and thermal transport properties of Bi0.5Sb1.5Te3thermoelectric alloy by twin boundary engineering[J].Nano Energy,2017,37:203-213.
[3]KIMS I I,LEE K H,MUN A H,et al.Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics[J].Science,2015,348(6 230):109-114.
[4]PARK K,AHN K,CHA J,et al.Extraordinary off-stoichiometric bismuth telluride for enhanced n-type thermoelectric power factor[J].Journal of American Chemistry Society,2016,138(43):14 458-14 468.
[5]KO J,KIM J Y,CHOI S M,et al.Nanograined thermoelectric Bi2Te2.7Se0.3 with ultralow phonon transport prepared from chemically exfoliated nanoplatelets[J].Journal of Materials Chemistry A,2013,1(41):12 791-12 796.
[6]CHEN Z W,ZHANG X Y,PEI Y Z.Manipulation of phonon transport in thermoelectrics[J].Advanced Materials,2018,30(17):1 705 617.
[7]XU Z J,HU L P,YING P J,et al.Enhanced thermoelectric and mechanical properties of zone melted p-type(Bi,Sb)2Te3thermoelectric materials by hot deformation[J].Acta Materials,2015,84:385-392.
[8]HU L P,ZHU T J,LIU X H,et al.Point defect engineering of high-performance bismuth-telluride-based thermoelectric materials[J].Advanced Functional Materials,2014,24(33):5 211-5 218.
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