光探测器偏压调制技术的理论研究（英文）
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摘要
为了简化和改善光载无线通信系统,提出了一种光探测器偏压调制技术,利用PIN光探测器(PIN-PD)和单行载流子光探测器(UTC-PD)的输出光电流随偏压变化的特性进行调制.采用光探测器偏置调制技术,光电探测和调制可以在一个光探测器上同时实现.研究表明当入射光功率为2.93dBm时,PIN-PD在10GHz射频副载波上的调制带宽为800 MHz,UTC-PD在150GHz射频副载波上的调制带宽为18.75GHz.调制带宽随入射光功率的增大而增大,当入射光功率为12.93dBm时,UTC-PD在150GHz射频副载波上的调制带宽可达25GHz.调制深度与正弦偏压调制信号的最小值有关.
To simplify and improve Radio-over-Fiber(RoF)communication systems,a kind of modulation technology based on the variation of output photocurrent with bias of PIN photodiode(PIN-PD)and unitraveling-carrier-photodiode(UTC-PD)is proposed,which is called photodiode bias modulation.By using this modulation technology,both photodetection and optoelectronic modulation can be achieved simultaneously in one PD.Based on two analytical models,the modulation bandwidth of the PIN-PD is predicted as 800 MHz at a 10 GHz RF subcarrier,and the modulation bandwidth of the UTC-PD is predicted as 18.75 GHz at a 150 GHz RF subcarrier,when the incident optical power is both 2.93 dBm.The modulation bandwidth increases with the incident optical power,when the incident light power is12.93 dBm,the modulation bandwidth of the UTC-PD can reach 25 GHz at a 150 GHz RF subcarrier.The modulation depth is associated with the minimum value of the sinusoidal bias modulation signal.
To simplify and improve Radio-over-Fiber(RoF)communication systems,a kind of modulation technology based on the variation of output photocurrent with bias of PIN photodiode(PIN-PD)and unitraveling-carrier-photodiode(UTC-PD)is proposed,which is called photodiode bias modulation.By using this modulation technology,both photodetection and optoelectronic modulation can be achieved simultaneously in one PD.Based on two analytical models,the modulation bandwidth of the PIN-PD is predicted as 800 MHz at a 10 GHz RF subcarrier,and the modulation bandwidth of the UTC-PD is predicted as 18.75 GHz at a 150 GHz RF subcarrier,when the incident optical power is both 2.93 dBm.The modulation bandwidth increases with the incident optical power,when the incident light power is12.93 dBm,the modulation bandwidth of the UTC-PD can reach 25 GHz at a 150 GHz RF subcarrier.The modulation depth is associated with the minimum value of the sinusoidal bias modulation signal.
引文
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[2] WILLIAMS K J,ESMAN R D,DAGENAIS M.Nonlearities in p-in microwave photodetectors[J].Journal of Lightwave Technology,1996,14:84-96.
[3] HU Y,MARKS B S,MENYUK C R,et al.Modeling sources of nonlinearity in a simple p-i-n photodetector[J].Journal of Lightwave Technology,2014,32(20):3710-3720.
[4] LIU Tao,HUANG Yong-qing,NIU Hui-juan,et al.Design of bias-free operational uni-traveling carrier photodiodes for terahertz wave generation[J].Optical and Quantum Electronics,2018,50:284.
[5] MENG Qian-qian,WANG Hong,YANG Chong,et al.High-photocurrent and wide-bandwidth UTC photodiodes with dipole-doped structure[J].IEEE Photonics Technology Letters,2014,26(19):1952-1955.
[6]HIRATA A, HARADA M. Millimeter-wave photonic wireless link using low-cost generation and modulation technologys[C].International Topical Meeting on Microwave Photonics,2002.
[7] HIRATA A,FURUTA T,ITO H,et al.10-Gb/s Millimeter-wave signal generation using photodiode bias modulation[J].Journal of Lightwave Technology,2006,24(4):1725-1731.
[8] WU Y S,KUO F M,WANG Shao-ning,et al.A W-band photonic transmitter-mixer based on high-power near-ballistic uni-traveling-carrier photodiodes for BPSK and QPSK data transmission[J].IEEE Photonics Technology Letters,2009,21(15):1039-1041.
[9] PAN Hua-pu,BELING A,CHEN Hao,et al.The frequency behavior of the intermodulation distortions of modified unitraveling carrier photodiodes based on modulated voltage measurements[J].IEEE Journal of Quantum Electronics,2009,45(3):273-277.
[10] KUO F M,HO Yen-lin,SHI J W,et al.12.5-Gb/s Wireless data transmission by using bias modulation of NBUTCPD based W-Band photonic transmitter-mixer[C].OSA/OFC/NFOEC 2010.
[11] FANG Zu-jie,YE Qing,LIU Feng,et al.Research progress of millimeter wave subcarrier optical fiber communication technology[J].Chinese Journal of Lasers,2006,33(4):481-488.