InGaN/GaN多量子阱蓝光LED外延片的变温光致发光谱
|
摘要
利用MOCVD在Al_2O_3(0001)衬底上制备InGaN/GaN MQW结构蓝光LED外延片。以400 mW中心波长405 nm半导体激光器作为激发光源,采用自主搭建的100～330 K低温PL谱测量装置,以及350～610 K高温PL测量装置,测量不同温度下PL谱。通过Gaussian分峰拟合研究了InGaN/GaN MQW主发光峰、声子伴线峰、n-GaN黄带峰峰值能量、相对强度、FWHM在100～610 K范围的温度依赖性。研究结果表明:在100～330 K温度范围内,外延片主发光峰及其声子伴线峰值能量与FWHM温度依赖性,分别呈现S与W形变化;载流子的完全热化分布温度约为150 K,局域载流子从非热化到热化分布的转变温度为170～190 K;350～610 K高温范围内,InGaN/GaN MQW主发光峰峰值能量随温度变化满足Varshni经验公式,可在MOCVD外延生长掺In过程中,通过特意降温在线测PL谱,实时推算掺In量,在线监测外延片生长。以上结果可为外延片的PL发光机理研究、高温在线PL谱测量设备开发、掺In量的实时监测等提供参考。
A blue light LED epitaxial wafer with InGaN/GaN MQW structure was prepared on an Al_2O_3(0001) substrate by MOCVD. The 400 mW semiconductor laser with a center wavelength of 405 nm was used as the excitation light source. The PL-spectrum at different temperatures was measured by the self-built 100-330 K low-temperature PL spectrum measurement device and the 350-610 K high-temperature PL measurement device. The peak energy and the relative intensity of InGaN/GaN MQW main luminescence peak, the phonon concomitant peak and the n-GaN yellow band peak, as well as the temperature dependence of the FWHM in the range of 100-610 K were studied by Gaussian peak differentiating and imitating. The results showed that in the temperature range of 100-330 K, the peak energy of the main luminescence peak and the phonon concomitant peak of the epitaxial wafer, as well as the temperature dependence of the FWHM displayed S and W-shaped changes respectively; the complete heating distribution temperature of the carrier was about 150 K; the transition temperature of local carriers from non-heating to heating distribution was 170-190 K; in the high temperature ranged 350-610 K, the changes in peak energy of InGaN/GaN MQW with temperature variation satisfied the Varshni empirical formula. In the In-doped process of MOCVD epitaxial growth, the PL spectrum could be measured by deliberately cooling the temperature; the amount of In-doped was calculated in real time; and the epitaxial wafer growth was monitored online. The above results can be used for the study of PL luminescence mechanism of epitaxial wafers, development of high-temperature online PL spectrum measurement equipment, real-time monitoring of In-doped and so on.
A blue light LED epitaxial wafer with InGaN/GaN MQW structure was prepared on an Al_2O_3(0001) substrate by MOCVD. The 400 mW semiconductor laser with a center wavelength of 405 nm was used as the excitation light source. The PL-spectrum at different temperatures was measured by the self-built 100-330 K low-temperature PL spectrum measurement device and the 350-610 K high-temperature PL measurement device. The peak energy and the relative intensity of InGaN/GaN MQW main luminescence peak, the phonon concomitant peak and the n-GaN yellow band peak, as well as the temperature dependence of the FWHM in the range of 100-610 K were studied by Gaussian peak differentiating and imitating. The results showed that in the temperature range of 100-330 K, the peak energy of the main luminescence peak and the phonon concomitant peak of the epitaxial wafer, as well as the temperature dependence of the FWHM displayed S and W-shaped changes respectively; the complete heating distribution temperature of the carrier was about 150 K; the transition temperature of local carriers from non-heating to heating distribution was 170-190 K; in the high temperature ranged 350-610 K, the changes in peak energy of InGaN/GaN MQW with temperature variation satisfied the Varshni empirical formula. In the In-doped process of MOCVD epitaxial growth, the PL spectrum could be measured by deliberately cooling the temperature; the amount of In-doped was calculated in real time; and the epitaxial wafer growth was monitored online. The above results can be used for the study of PL luminescence mechanism of epitaxial wafers, development of high-temperature online PL spectrum measurement equipment, real-time monitoring of In-doped and so on.
引文
[1] 刘诗涛,王立,伍菲菲,等.InGaN/GaN多量子阱LED载流子泄漏与温度关系研究 [J].发光学报,2017,38(1):63-69.LIU S T,WANG L,WU F F,et al..Temperature-dependent carrier leakage in InGaN/GaN multiple quantum wells light-emitting diodes [J].Chin.J.Lumin.,2017,38(1):63-69.(in Chinese)
[2] HATTORI A N,HATTORI K,MORIWAKI Y,et al..Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments [J].Jpn.J.Appl.Phys.,2014,53(2):021001-1-5.
[3] 杨超普.MOCVD在线光致发光与红外测温研究 [D].南昌:南昌大学,2014.YANG C P.Research on MOCVD in situ Photoluminescence and On-line Infrared Thermometry [D].Nanchang:Nanchang University,2014.(in Chinese)
[4] 张凯.InGaN/GaN多量子阱发光特性的研究 [D].济南:山东大学,2015.ZHANG K.Optical Investigation on InGaN/GaN Multiple Quantum Wells [D].Jinan:Shandong University,2015.(in Chinese)
[5] LIU S T,QUAN Z J,WANG L.Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells [J].Chin.Phys.B,2017,26(3):038104-1-6.
[6] YANG C P,FANG W Q,MAO Q H,et al..Photoluminescence study of blue light LED epitaxial wafer during growth by MOCVD [J].Optoelectron.Adv.Mater.—Rapid Commun.,2015,9(11-12):1575-1578.
[7] 王雪蓉,魏莉萍,郑会保,等.利用光致发光法测定AlxGa1-xN外延膜中的铝元素含量 [J].激光与光电子学进展,2012,49(5):051601-1-5.WANG X R,WEI L P,ZHENG H B,et al..Al contents of AlxGa1-xN epitaxial films studied by photoluminescence technique [J].Laser Optoelectron.Prog.,2012,49(5):051601-1-5.(in Chinese)
[8] 魏国华,王斌,李俊梅,等.In0.2Ga0.8As/GaAs单量子阱PL谱温度特性及其机制 [J].发光学报,2010,31(5):619-623.WEI G H,WANG B,LI J M,et al..Temperature dependence of the photoluminescence properties and the research on the mechanism of In0.2Ga0.8As/GaAs single quantum well [J].Chin.J.Lumin.,2010,31(5):619-623.(in Chinese)
[9] 邢兵,曹文彧,杜为民.不同In含量InGaN/GaN量子阱材料的变温PL谱 [J].发光学报,2010,31(6):864-869.XING B,CAO W Y,DU W M.Temperature-dependent PL of InGaN/GaN multiple quantum wells with variable content of In [J].Chin.J.Lumin.,2010,31(6):864-869.(in Chinese)
[10] LIN T,QIU Z R,YANG J R,et al..Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells [J].Mater.Lett.,2016,173:170-173.
[11] 王绘凝.InGaN/GaN多量子阱的结构及其光学特性的研究 [D].济南:山东大学,2014.WANG H N.Structure and Optical Investigation on InGaN/GaN Multiple Quantum Wells [D].Jinan:Shandong University,2014.(in Chinese)
[12] 竹有章,傅关新,王红霞,等.HVPE生长GaN厚膜光致发光特性研究 [J].激光与光电子学进展,2011,48(9):093101-1-5.ZHU Y Z,FU G X,WANG H X,et al..Luminescence of GaN thick film grown by HVPE [J].Laser Optoelectron.Prog.,2011,48(9):093101-1-5.(in Chinese)
[13] WANG Q,ZHU C R,ZHOU Y F,et al..Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs [J].Superlattices Microstruct.,2015,88:323-329.
[14] PRALL C,RUEBESAM M,WEBER C,et al..Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE [J].J.Cryst.Growth,2014,397:24-28.
[2] HATTORI A N,HATTORI K,MORIWAKI Y,et al..Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments [J].Jpn.J.Appl.Phys.,2014,53(2):021001-1-5.
[3] 杨超普.MOCVD在线光致发光与红外测温研究 [D].南昌:南昌大学,2014.YANG C P.Research on MOCVD in situ Photoluminescence and On-line Infrared Thermometry [D].Nanchang:Nanchang University,2014.(in Chinese)
[4] 张凯.InGaN/GaN多量子阱发光特性的研究 [D].济南:山东大学,2015.ZHANG K.Optical Investigation on InGaN/GaN Multiple Quantum Wells [D].Jinan:Shandong University,2015.(in Chinese)
[5] LIU S T,QUAN Z J,WANG L.Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells [J].Chin.Phys.B,2017,26(3):038104-1-6.
[6] YANG C P,FANG W Q,MAO Q H,et al..Photoluminescence study of blue light LED epitaxial wafer during growth by MOCVD [J].Optoelectron.Adv.Mater.—Rapid Commun.,2015,9(11-12):1575-1578.
[7] 王雪蓉,魏莉萍,郑会保,等.利用光致发光法测定AlxGa1-xN外延膜中的铝元素含量 [J].激光与光电子学进展,2012,49(5):051601-1-5.WANG X R,WEI L P,ZHENG H B,et al..Al contents of AlxGa1-xN epitaxial films studied by photoluminescence technique [J].Laser Optoelectron.Prog.,2012,49(5):051601-1-5.(in Chinese)
[8] 魏国华,王斌,李俊梅,等.In0.2Ga0.8As/GaAs单量子阱PL谱温度特性及其机制 [J].发光学报,2010,31(5):619-623.WEI G H,WANG B,LI J M,et al..Temperature dependence of the photoluminescence properties and the research on the mechanism of In0.2Ga0.8As/GaAs single quantum well [J].Chin.J.Lumin.,2010,31(5):619-623.(in Chinese)
[9] 邢兵,曹文彧,杜为民.不同In含量InGaN/GaN量子阱材料的变温PL谱 [J].发光学报,2010,31(6):864-869.XING B,CAO W Y,DU W M.Temperature-dependent PL of InGaN/GaN multiple quantum wells with variable content of In [J].Chin.J.Lumin.,2010,31(6):864-869.(in Chinese)
[10] LIN T,QIU Z R,YANG J R,et al..Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells [J].Mater.Lett.,2016,173:170-173.
[11] 王绘凝.InGaN/GaN多量子阱的结构及其光学特性的研究 [D].济南:山东大学,2014.WANG H N.Structure and Optical Investigation on InGaN/GaN Multiple Quantum Wells [D].Jinan:Shandong University,2014.(in Chinese)
[12] 竹有章,傅关新,王红霞,等.HVPE生长GaN厚膜光致发光特性研究 [J].激光与光电子学进展,2011,48(9):093101-1-5.ZHU Y Z,FU G X,WANG H X,et al..Luminescence of GaN thick film grown by HVPE [J].Laser Optoelectron.Prog.,2011,48(9):093101-1-5.(in Chinese)
[13] WANG Q,ZHU C R,ZHOU Y F,et al..Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs [J].Superlattices Microstruct.,2015,88:323-329.
[14] PRALL C,RUEBESAM M,WEBER C,et al..Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE [J].J.Cryst.Growth,2014,397:24-28.