二维SnSe和SnSe_2薄膜的可控制备
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摘要
目前二维IV-VI族窄带隙半导体材料在存储开关、太阳能转换、热电转换和近红外光电器件等领域受到了广泛关注.其中硒化锡(SnSe)和二硒化锡(SnSe2)作为典型的IV-VI族窄带隙半导体,由于其优异的电子和光电性能成了研究热点.目前,制备SnSe和SnSe_2薄膜通常需要使用两套气相沉积系统,而制备SnSe_2纳米片更是需要通过化学气相沉积的方法才能获得,因此面临制备成本高、可控性低的问题.该文提供了一种气相沉积方法,一步制备了SnSe和SnSe_2薄膜,大大提高了制备效率.该方法只需要控制加热温度,制备过程简单可控.通过一系列的表征手段证明,制备的SnSe薄膜和SnSe_2薄膜十分纯净.
Two-dimensional layered IV-VI narrow bandgap semiconductors have attracted great interests for applications in memory switching devices,solar energy conversion,thermoelectric energy conversion,and near-infrared optoelectronic devices.SnSe and SnSe_2 as typical two-dimensional layered IV-VI narrow bandgap semiconductors,have been widely investigated due to their excellent electronic and photoelectric properties.Currently,two separative deposition systems are required to prepare both SnSe and SnSe_2 films,while SnSe_2 films can only be obtained by chemical vapor deposition,which increases the preparation cost and reduces the controllability.In this paper,we grow SnSe and SnSe_2 thin films in one process,which greatly improves the conversion rate.We show that the as-deposited samples are pure SnSe films and SnSe_2 films through a series of characterization methods.
Two-dimensional layered IV-VI narrow bandgap semiconductors have attracted great interests for applications in memory switching devices,solar energy conversion,thermoelectric energy conversion,and near-infrared optoelectronic devices.SnSe and SnSe_2 as typical two-dimensional layered IV-VI narrow bandgap semiconductors,have been widely investigated due to their excellent electronic and photoelectric properties.Currently,two separative deposition systems are required to prepare both SnSe and SnSe_2 films,while SnSe_2 films can only be obtained by chemical vapor deposition,which increases the preparation cost and reduces the controllability.In this paper,we grow SnSe and SnSe_2 thin films in one process,which greatly improves the conversion rate.We show that the as-deposited samples are pure SnSe films and SnSe_2 films through a series of characterization methods.
引文
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[13]Fernandes P A,Sousa M G,SaloméP M P,et al.Thermodynamic pathway for the formation of SnSe and SnSe2polycrystalline thin films by selenization of metal precursors[J].Cryst Eng Comm,2013,15(47):10278-10286.
[14]Huang Y,Xu K,Wang Z,et al.Designing the shape evolution of SnSe2 Nanosheets and their optoelectronic properties[J].Nanoscale,2015,41(7):17375-17380.
[2]Zhou X,Gan L,Tian W,et al.Ultrathin SnSe2 flakes grown by chemical vapor deposition for high-performance photodetectors[J].Adv Mater,2015,27(48):8035-8041.
[3]Boscher N D,Carmalt C J,Palgrave R G,et al.Atmospheric pressure chemical vapour deposition of SnSe and SnSe2 thin films on glass[J].Thin Solid Films,2008,516(15):4750-4757.
[4]Barrios-Salgado E,Nair M T S,Nair P K.Thin films of n-type SnSe2 produced from chemically deposited p-type SnSe[J].Thin Solid Films,2016,598:149-155.
[5]Ramasamy P,Manivasakan P,Kim J.Phase controlled synthesis of SnSe and SnSe2hierarchical nanostructures made of single crystalline ultrathin nanosheets[J].Cryst Eng Comm,2015,17(4):807-813.
[6]Martínez-Escobar D,Ramachandran M,Sánchez-Juárez A,et al.Optical and electrical properties of SnSe2 and SnSe thin films prepared by spray pyrolysis[J].Thin Solid Films,2013,535:390-393.
[7]Sharma J,Singh R,Singh H,et al.Synthesis of SnSe2 thin films by thermally induced phase transition in SnSe[J].Journal of Alloys and Compounds,2017,724:62-66.
[8]Lu D,Luo S,Liu S,et al.Anomalous temperature-dependent raman scattering of vapor-deposited two-dimensional Bi thin films[J].The Journal of Physical Chemistry C,2018,122(42):24459-24466.
[9]Xu X,Li X,Liu K,et al.Thermodynamics and kinetics synergetic phase-engineering of chemical vapor deposition grown single crystal MoTe2 nanosheets[J].Crystal Growth&Design,2018,18(5):2844-2850.
[10]Luo S,Xiang Q,Hao Y,et al.Temperature-dependent raman responses of the vapor deposited tin selenide ultrathin flakes[J].Journal of Physical Chemistry C,2017,121(8):4674-4679.
[11]Lee L,Chen C W,Manikandan A,et al.Phase-engineered SnSex toward SnSe2/SnSe heterostructure with improved thermal conductance by a low-temperature plasma-assisted chemical vapor reaction[J].Nano Energy,2018,44:419-429.
[12]Huang L,Yu Y,Li C,et al.Substrate mediation in vapor deposition growth of layered chalcogenide nanoplates:a case study of SnSe2[J].The Journal of Physical Chemistry C,2013,117(12):6469-6475.
[13]Fernandes P A,Sousa M G,SaloméP M P,et al.Thermodynamic pathway for the formation of SnSe and SnSe2polycrystalline thin films by selenization of metal precursors[J].Cryst Eng Comm,2013,15(47):10278-10286.
[14]Huang Y,Xu K,Wang Z,et al.Designing the shape evolution of SnSe2 Nanosheets and their optoelectronic properties[J].Nanoscale,2015,41(7):17375-17380.