单晶硅快速磷扩散研究
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摘要
采用传统方法向晶体硅中扩磷不仅耗时长,而且能耗多。使用快速热处理(RTP)方法可以在数十秒时间内达到磷扩散深度和浓度的要求,具有广阔前景。使用磷纸作为扩散源,结合快速热处理法对p型单晶硅片进行磷扩散,用磨角染色法探究扩散结深,获得了最为理想的p-n结扩散温度及时间。通过计算快速热处理条件下磷在硅中的扩散系数以及扩散激活能,分析了与传统扩散方法不同的原因。
It takes long time to diffuse phosphorus into crystalline silicon by conventional method,and it is a high-energy progress.But it can be achieved in tens of seconds by using rapid thermal progress(RTP).This method has a prosperity prospect.In this paper,phosphorus diffusion into p-type monocrystalline silicon wafer was carried out by using the strategy combined phosphorus paper with rapid thermal progress.Then the p-n junction depth was explored by using angle lapping and staining technique in order to obtain the best diffusion temperature and time.Finally,the diffusion coefficient and diffusion activation energy of phosphorus in silicon by RTP were calculated,and the reason of difference between RTP and conventional method was analyzed.
It takes long time to diffuse phosphorus into crystalline silicon by conventional method,and it is a high-energy progress.But it can be achieved in tens of seconds by using rapid thermal progress(RTP).This method has a prosperity prospect.In this paper,phosphorus diffusion into p-type monocrystalline silicon wafer was carried out by using the strategy combined phosphorus paper with rapid thermal progress.Then the p-n junction depth was explored by using angle lapping and staining technique in order to obtain the best diffusion temperature and time.Finally,the diffusion coefficient and diffusion activation energy of phosphorus in silicon by RTP were calculated,and the reason of difference between RTP and conventional method was analyzed.
引文
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[2]Dong Fupin.Introduction to renewable energy[M].Beijing:Environmental Science Press,2013:5-6.董福品.可再生能源概论[M].北京:中国环境出版社,2013:5-6.
[3]Vinod Kumar,Shrivastava R L,Untawale S P.Solar energy:review of potential green&clean energy for coastal and offshore applications[J].Aquatic Procedia,2015,4:473-480.
[4]Jibran Khan,Mudassar H Arsalan.Solar power technologies for sustainable electricity generation-a review[J].Renewable and Sustainable Energy Reviews,2016,55:414-425.
[5]Ishan Purohit,Pallav Purohit,Shashaank Shekhar.Evaluating the potential of concentrating solar power generation in India[J].Energy Policy,2013,62:157-175.
[6]Arif Alama,Ihtisham Abdul Malikb,Alias Bin Abdullahb,et al.Does financial development contribute to SAARC'S energy demand?From energy crisis to energy reforms[J].Renewable and Sustainable Energy Reviews,2015,41:818-829.
[7]Georgios E Arnaoutakis,Jose Marques-Hueso,Aruna Ivaturi,et al.Enhanced energy conversion of up-conversion solar cells by the integration of compound parabolic concentrating optics[J].Solar Energy Materials and Solar Cells,2015,140:217-223.
[8]Becker C,Amkreutz D,Sontheimer T,et al.Polycrystalline silicon thin-film solar cells:status and perspectives[J].Solar Energy Materials and Solar Cells,2013,119:112-123.
[9]Liang Xueqin.Experiments and analysis of new technology of crystalline silicon solar cell[D].Guangzhou:Zhongshan University,2010.梁学勤.晶体硅太阳电池新工艺实验研究和理论分析[D].广州:中山大学,2010.
[10]Wu Jiang,Wang Zhiming,Dorogan Vitaliy,et al.Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells[J].Nanoscale Research Letters,2013,8(1):1-5.
[11]Simone Mazzucato,Benjamin Royall,Richard Ketlhwaafetse,et al.Dilute nitride and GaAs n-i-p-i solar cells[J].Nanoscale Research Letters,2012,7(1):631.
[12]Xin Yakun,Chen Nuofu,Wu Qiang,et al.Preparation and properties of polycrystalline silicon thin films with(220)and(400)preferred orientation on graphite substrate[J].Journal of Functional Materials,2015,4:4153-4158.辛雅焜,陈诺夫,吴强,等.石墨衬底上具有(220)/(400)择优取向多晶硅薄膜的制备及性质[J].功能材料,2015,4:4153-4158.
[13]Wang Xing,Liu Hongxia,Fei Chenxi,et al.Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer[J].Nanoscale Res Lett,2015,10:141-146.
[14]Lee Ya-ju,Yao Yung-chi,Yang Chia-hao.Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells[J].Energy Express,2013,21(1):A7-A14.
[15]Liang J H,Wu C H.Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon[J].Applied Surface Science,2014,310:230-234.
[16]Dong Hyeop Shin,Seung Taw Kim,Ji Hye Kim,et al.Study of band structure at the Zn(S,O,OH)/Cu(In,Ga)Se2interface via rapid thermal annealing and their effect on the photovoltaic properties[J].Applied Materials&Interfaces,2013,5:12921-12927.
[17]Duan L F,Yang W,Yang P Z,et al.Research on the phase and optical properties of nc-Si films prepared by low temperature aluminum induced crystallization[J].Guang Pu Xue Yu Guang Pu Fen Xi,2014,34(8):2169-2174.
[18]Hua Jutuan.RTP impacts on the spread of phosphorus in silicon[A].Proceedings of the 8~(th)China Photovoltaic Conference[C]//Shenzhen:Chinese Solar Energy Society,2004:1-4.花聚团.RTP对磷在硅中扩散的影响[A].第八届全国光伏会议暨中日光伏论坛论文集[C]//深圳:中国太阳能学会,2004:1-4.
[19]Tong Liying,Zhao Quan,Shi Jixiang,et al.Chemical coloration method for measuring the diffused-junction width of B,Al and P atom[J].Semiconductor Technology,2009,12:1213-1215.佟丽英,赵权,史继祥,等.化学染色法测量B,Al及P扩散结深[J].半导体技术,2009,12:1213-1215.
[20]He Bo,Shi Yanli,Xu Jing,Principle of the C-V method for measuring impurity distribution in junction diodes and its application[J].Infrared(monthly),2006,27(10):5-10.何波,史衍丽,徐静.CV法测量pn结杂质浓度分布的基本原理及应用[J].红外,2006,27(10):5-10.
[21]Lavareda G,de Calheiros Velozo A,Nunes de Carvalho C,et al.p/n junction depth control using amorphous silicon as a low temperature dopant source[J].Thin Solid Films,2013,543:122-124.
[22]F110-88,Standard test method for thickness of epitaxial or diffused layer in silicon by the angle lapping and staining technique[S].
[23]Hu Gengxiang.Fundamentals of materials science[M].Shanghai:Shanghai Jiaotong University Press,2010:151-152.胡赓祥.材料科学基础[M].上海:上海交通大学出版社,2010:151-152.
[24]James W.Electronic materials science:for integrated circuits in Si and GaAs[M].London:Collier Macmillan,1990:137-138.