快速热退火对GaAs/AlGaAs量子阱材料结构及发光特性的影响
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摘要
研究了快速热退火(RTA)对GaAs/AlGaAs量子阱材料结构及发光特性的影响。结果表明,当退火温度为800℃时,材料晶体质量和光致发光(PL)强度得到显著提升;当退火温度为900℃时,材料晶体质量和PL强度降低。依据峰值能量理论得到了室温下PL峰位的发光机制。通过分峰拟合发现,RTA导致PL峰位整体蓝移。PL扫描图表明,RTA可以显著提高材料的整体晶体质量和发光均匀性。
The influence of rapid thermal annealing(RTA)on the structural and luminescence properties of GaAs/AlGaAs quantum wells is investigated.The results show that,when the annealing temperature is 800℃,the crystal quality and photoluminescence(PL)intensity is significantly improved.When the annealing temperature is 900 ℃,the crystal quality and PL intensity decrease.According to the peak energy theory,the luminous mechanism at room temperature of PL peaks is obtained.A whole RTA-induced blue shift of PL peaks is observed by peakdifferentiating and fitting.The PL mapping demonstrates that RTA can significantly improve the whole crystal quality and the luminous uniformity of materials.
The influence of rapid thermal annealing(RTA)on the structural and luminescence properties of GaAs/AlGaAs quantum wells is investigated.The results show that,when the annealing temperature is 800℃,the crystal quality and photoluminescence(PL)intensity is significantly improved.When the annealing temperature is 900 ℃,the crystal quality and PL intensity decrease.According to the peak energy theory,the luminous mechanism at room temperature of PL peaks is obtained.A whole RTA-induced blue shift of PL peaks is observed by peakdifferentiating and fitting.The PL mapping demonstrates that RTA can significantly improve the whole crystal quality and the luminous uniformity of materials.
引文
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[7]Ma D Y,Chen N F,Tao Q L,et al.Performance of space GaInP/(In)GaAs/Ge triple-junction solar cell containing Bragg reflector[J].Acta Optica Sinica,2017,37(11):1131001.马大燕,陈诺夫,陶泉丽,等.包含布拉格反射器的空间用GaInP/(In)GaAs/Ge三结太阳电池性能[J].光学学报,2017,37(11):1131001.
[8]Zhou G L,Xu J M,Lu J,et al.Irradiation effect of continuous-wave laser on triple-junction GaAs solar cells[J].Laser&Optoelectronics Progress,2017,54(11):111412.周广龙,徐建明,陆健,等.连续激光对三结GaAs电池的损伤效应[J].激光与光电子学进展,2017,54(11):111412.
[9]Gunapala S D,Bandara S V,Liu J K,et al.1024×1024Format pixel co-located simultaneously readable dual-band QWIP focal plane[J].Infrared Physics&Technology,2009,52(6):395-398.
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[11]Djie H S,Ooi B S,Aimez V.Neutral ionimplantation-induced selective quantum-dot intermixing[J].Applied Physics Letters,2005,87(26):261102.
[12]Cˇervenka J,Kalousek R,Barto2ík M,et al.Fabrication of nanostructures on Si(100)and GaAs(100)by local anodic oxidation[J].Applied Surface Science,2006,253(5):2373-2378.
[13]Deppe D G,Holonyak N,Jr.Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures[J].Journal of Applied Physics,1988,64(12):R93-R113.
[14]Marsh J H,Bradshaw S A,Bryce A C,et al.Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP[J].Journal of Electronic Materials,1991,20(12):973-978.
[15]Du S C,Fu L,Tan H H,et al.Investigations of impurity-free vacancy disordering in(Al)InGaAs(P)/InGaAs quantum wells[J].Semiconductor Science and Technology,2010,25(5):055014.
[16]Zhao J,Feng Z C,Wang Y C,et al.Luminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disordering[J].Surface and Coatings Technology,2006,200(10):3245-3249.
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