本征薄层异质结(HIT)太阳能电池的研究现状及展望
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摘要
HIT(Heterojunction with intrinsic thin-layer)太阳能电池,即具有本征非晶硅薄层的异质结太阳能电池,利用了非晶硅薄膜/单晶硅衬底的异质结结构,从而结合了单晶硅和非晶硅太阳能电池优良的特点。这种类型结构的电池可以在较低温度下(<250℃)制造,具有良好的光照稳定性和温度稳定性,成本低而且效率高,目前效率达到26.7%。文章简述了HIT太阳能电池的结构和工作原理,并且总结了HIT电池的研究和应用现状。除此之外,还分析了提高HIT太阳能电池效率的方法以及HIT电池广阔的应用前景和巨大的商业化潜力。
HIT(Heterojunction with intrinsic thin-layer) solar cells possess the heterojunction structure of amorphous silicon thin film/crystalline silicon,in order to synthesize the advantages of monocrystalline silicon and amorphous silicon solar cells. The HIT solar cell can be manufactured at a lower temperature(< 250 ℃),with the excellent light stability and temperature stability. It also has high efficiency up to26. 7% but lower cost. This paper discusses the basic structure and principle of the HIT solar cell,and then summarizes the development and research status. In addition,it analysis the key factors improving the efficiency of HIT solar cells,as well as the broad application prospect of HIT solar cells.
HIT(Heterojunction with intrinsic thin-layer) solar cells possess the heterojunction structure of amorphous silicon thin film/crystalline silicon,in order to synthesize the advantages of monocrystalline silicon and amorphous silicon solar cells. The HIT solar cell can be manufactured at a lower temperature(< 250 ℃),with the excellent light stability and temperature stability. It also has high efficiency up to26. 7% but lower cost. This paper discusses the basic structure and principle of the HIT solar cell,and then summarizes the development and research status. In addition,it analysis the key factors improving the efficiency of HIT solar cells,as well as the broad application prospect of HIT solar cells.
引文
[1]Borchert D,Grabosch G,Fahrner W R.Preparation of(n)a-Si∶H/(p)c-Si heterojunction solar cells[J].Solar Energy Materials&Solar Cells,1997,49(1):53-59.
[2]Taguchi M,Terakawa A,Maruyama E,et al.Obtaining a higher Vocin HIT cells[J].Progress in Photovoltaics Research&Applications,2005,13(6):481-488.
[3]Yoshikawa K,Kawasaki H,Yoshida W,et al.Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%[J].Nature Energy,2017,2(5):17032.
[4]林鸿生,段开敏,马雷.异质结硅太阳能电池a-Si∶H薄膜的研究[J].光电子·激光,2002,13(5):460-464.
[5]Taguchi M,Yano A,Tohoda S,et al.24.7%Record Efficiency HIT Solar Cell on Thin Silicon Wafer[J].IEEE Journal of Photovoltaics,2013,4(1):96-99.
[6]刘艳红,刘爱民.带有本征薄层的异质结太阳能电池[J].半导体技术,2010,35(1):1-7.
[7]孙启利,胡志华,廖华,等.HIT太阳电池研究现状[J].云南师范大学学报(自然科学版),2012,32(2):35-38.
[8]陈晨,贾锐,朱晨昕,等.异质结及其技术在新型硅基太阳能电池中的应用[J].物理,2010,39(2):123-129.
[9]Mishima T,Taguchi M,Sakata H,et al.Development status of high-efficiency HIT solar cells[J].Solar Energy Materials&Solar Cells,2011,95(1):18-21.
[10]Tohoda S,Fujishima D,Yano A,et al.Future directions for higher-efficiency HIT solar cells using a Thin Silicon Wafer[J].Journal of NonCrystalline Solids,2012,358(17):2219-2222.
[11]Why Panasonic HITTM[EB/OL],https://panasonic.net/ecosolutions/solar/hit/index.html.
[12]Technology[EB/OL],https://panasonic.net/ecosolutions/solar/technology/index.html.
[13]Taguchi M,Kawamoto K,Tsuge S,et al.HITTM cells-high-efficiency crystalline Si cells with novel structure[J].Progress in Photovoltaics Research&Applications,2000,8(5):503-513.
[14]李正平,沈文忠.高效HIT太阳电池组件及其应用[J].上海节能,2015(1):41-45.
[15]Takahama T,Taguchi M,Kuroda S,et al.High efficiency single-and poly-crystalline silicon solar cells using ACJ-HIT structure[C].11th EC PVSEC.Montreux,1992:1057.
[16]Sawada T,Terada N,Tsuge S,et al.High efficiency a-Si/c-Si heterojunction solar cell[C].First WCPEC.Hawaii,1994:1219.
[17]Tanaka M,Okamoto S,Tsuge S,et al.Development of hit solar cells with more than 21%conversion efficiency and commercialization of highest performance hit modules[C].Photovoltaic Energy Conversion,2003.Proceedings of,World Conference on,IEEE Xplore,2003,Vol.1:955-958.
[18]Masuko K,Shigematsu M,Hashiguchi T,et al.Achievement of More Than 25%Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell[J].IEEE Journal of Photovoltaics,2014,4(6):1433-1435.
[19]Fujishima D,Inoue H,Tsunomura Y,et al.High-performance HIT solar cells for thinner silicon wafers[C].Photovoltaic Specialists Conference,IEEE,2010:003137-003140.
[20]Tsunomura Y,Yoshimine Y,Taguchi M,et al.Twenty-two percent efficiency HIT solar cell[J].Solar Energy Materials&Solar Cells,2009,93(6-7):670-673.
[21]Maruyama E,Terakawa A,Taguchi M,et al.Sanyo's Challenges to the Development of High-efficiency HIT Solar Cells and the Expansion of HIT Business[C].Photovoltaic Energy Conversion,Conference Record of the 2006 IEEE,World Conference on.IEEE,2007:1455-1460.
[22]Taguchi M,Terakawa A,Maruyama E,et al.Obtaining a higher Vocin HIT cells[J].Progress in Photovoltaics Research&Applications,2005,13(6):481-488.
[23]Descoeudres A,Holman Z C,Barraud L,et al.>21%Efficient Silicon Heterojunction Solar Cells on n-and p-Type Wafers Compared[J].IEEE Journal of Photovoltaics,2013,3(1):83-89.
[24]NREL,Efficient chart[EB/OL].(2017)[2018-6-25].https://www.nrel.gov/pv/assets/images/efficiency-chart.png.
[25]夏普酝酿生产混合HBC太阳能电池[EB/OL].(2014-9-30)[2018-6-25].http://guangfu.bjx.com.cn/news/20140930/551946.shtml.
[26]Adachi D,Hernández J L,Yamamoto K.Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1%efficiency[J].Applied Physics Letters,2015,107(23):73-812.
[27]Zhang Y,Yu C,Yang M,et al.Optimization of the window layer in large area silicon heterojunction solar cells[J].Rsc Advances,2017,7(15):9258-9263.
[28]Huang H B,Tian G Y,Zhou L,et al.Simulation and experimental study of a novel bifacial structure of silicon heterojunction solar cell for high efficiency and low cost[J].Chinese Physics B,2018,27(3):038502.
[29]Bivour M,Rüdiger M,Reichel C,et al.Analysis of the Diffused Front Surface Field of n-type Silicon Solar Cells with a-Si/c-Si Heterojunction Rear Emitter[J].Energy Procedia,2011,8(4):185-192.
[30]Wang Q,Page M R,Iwaniczko E,et al.Efficient heterojunction solar cells on p-type crystal silicon wafers[J].Applied Physics Letters,2010,96(1):2186-217.
[31]张群芳,朱美芳,刘丰珍.高效薄膜硅/晶体硅异质结电池的研究[J].太阳能,2006,04:40-41.
[32]Tsunomura Y,Yoshimine Y,Taguchi M,et al.Twenty-two percent efficiency HIT solar cell[J].Solar Energy Materials&Solar Cells,2009,93(6-7):670-673.
[33]沈文忠,李正平.硅基异质结太阳电池物理与器件[M].北京:科学出版社,2014,145-147.
[34]Jagannathan B,Anderson W A,Coleman J.Amorphous silicon/p-type crystalline silicon heterojunction solar cells[J].Solar Energy Materials&Solar Cells,1997,64(3):241-249.
[35]何玉平,黄海宾,周浪,等.HWCVD工艺参数对a-Si∶H薄膜结构及其对单晶硅片钝化效果的影响研究[J].功能材料,2015,46(22):22067-22070.
[36]郭万武,张丽平,包健,等.异质结太阳电池中非晶钝化层的分光椭偏分析[J].光学学报,2015,36(6):374-381.
[37]龚洪勇,黄海宾,高江,等.低速率沉积非晶硅薄膜钝化Cz-Si片的研究[J].太阳能学报,2015,36(3):529-533.
[38]田罡煜,王涛,黄海宾,等.热丝CVD法沉积超薄α-Si∶H钝化膜[J].半导体技术,2017,42(5):376-381.
[39]宁武涛,何玉平,黄海宾,等.热丝电流对HWCVD制备α-Si∶H膜结构及钝化效果的影响[J].半导体技术,2015,40(8):606-610.
[40]Wei C Y,Lin C H,Hsiao H T,et al.Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers[J].Materials,2013,6(11):5440-5446.
[41]Xu Y,Hu Z,Diao H,et al.Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers[J].Journal of NonCrystalline Solids,2006,352(9-20):1972-1975.
[42]张群芳,朱美芳,刘丰珍,等.高效率n-nc-Si∶H/p-c-Si异质结太阳能电池[J].半导体学报,2007,28(1):96-99.
[43]Perny M,ály V,Janícek F,et al.Electric measurements of PV heterojunction structures a-Si C/c-Si[J].Journal of Electrical Engineering,2018,69.
[44]威猜·米蒙空革,阿吉特·罗哈吉.利用丝网印刷的局部背场形成高质量背接触:CN,CN 101720512 A[P].2010.
[45]刘振芳,刘淑平,聂慧军.β-Fe Si2(n)/a-Si(i)/c-Si(p)/μc-Si(p+)异质结太阳能电池的模拟与优化[J].红外,2016,37(5):38-42.
[46]Angermann H,Korte L,Rappich J,et al.Optimisation of electronic interface properties of a-Si∶H/c-Si hetero-junction solar cells by wetchemical surface pre-treatment[J].Thin Solid Films,2008,516(20):6775-6781.
[47]Veschetti Y,Muller J C,Damon-Lacoste J,et al.Optimization of amorphous and polymorphous thin silicon layers for the formation of the frontside of heterojunction solar cells on p-type crystalline silicon substrates[J].Thin Solid Films,2006,s 511-512(14):543-547.
[48]Tan M,Zhong S,Wang W,et al.Silicon homo-heterojunction solar cells:A promising candidate to realize high performance more stably[J].Aip Advances,2017,7(8):085016.
[49]Bivour M,Meinhardt C,Pysch D,et al.n-type silicon solar cells with amorphous/crystalline silicon heterojunction rear emitter[C].Photovoltaic Specialists Conference,IEEE,2010:001304-001308.
[50]王涛,黄海宾,孙喜莲,等.重掺杂c-Si背场a-Si∶H/c-Si背结双面太阳能电池初步实验研究[J].激光与光电子学进展,2017(8):241-245.
[51]史少飞.HIT太阳能电池材料的制备与性能研究[D].大连:大连理工大学,2012.
[52]龚洪勇,黄海宾,周浪.晶体硅金字塔绒面结构圆化对其光反射率和非晶硅薄膜钝化效果的影响[J].人工晶体学报,2015,44(4):913-917.
[53]刘美玲,俞健,卞剑涛,等.金属与超薄非晶硅薄膜的接触特性研究[J].太阳能学报,2016,37(11):2952-2957.
[54]石建华,孟凡英,崔艳峰,等.工作气压对反应等离子体沉积ITO薄膜性能的影响[C].中国太阳级硅及光伏发电研讨会,2012.
[55]林鸿生,陈备.a-Si/c-Si异质结太阳能电池制造中的技术分析[J].中国科学技术大学学报,1997(2):132-136.
[2]Taguchi M,Terakawa A,Maruyama E,et al.Obtaining a higher Vocin HIT cells[J].Progress in Photovoltaics Research&Applications,2005,13(6):481-488.
[3]Yoshikawa K,Kawasaki H,Yoshida W,et al.Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%[J].Nature Energy,2017,2(5):17032.
[4]林鸿生,段开敏,马雷.异质结硅太阳能电池a-Si∶H薄膜的研究[J].光电子·激光,2002,13(5):460-464.
[5]Taguchi M,Yano A,Tohoda S,et al.24.7%Record Efficiency HIT Solar Cell on Thin Silicon Wafer[J].IEEE Journal of Photovoltaics,2013,4(1):96-99.
[6]刘艳红,刘爱民.带有本征薄层的异质结太阳能电池[J].半导体技术,2010,35(1):1-7.
[7]孙启利,胡志华,廖华,等.HIT太阳电池研究现状[J].云南师范大学学报(自然科学版),2012,32(2):35-38.
[8]陈晨,贾锐,朱晨昕,等.异质结及其技术在新型硅基太阳能电池中的应用[J].物理,2010,39(2):123-129.
[9]Mishima T,Taguchi M,Sakata H,et al.Development status of high-efficiency HIT solar cells[J].Solar Energy Materials&Solar Cells,2011,95(1):18-21.
[10]Tohoda S,Fujishima D,Yano A,et al.Future directions for higher-efficiency HIT solar cells using a Thin Silicon Wafer[J].Journal of NonCrystalline Solids,2012,358(17):2219-2222.
[11]Why Panasonic HITTM[EB/OL],https://panasonic.net/ecosolutions/solar/hit/index.html.
[12]Technology[EB/OL],https://panasonic.net/ecosolutions/solar/technology/index.html.
[13]Taguchi M,Kawamoto K,Tsuge S,et al.HITTM cells-high-efficiency crystalline Si cells with novel structure[J].Progress in Photovoltaics Research&Applications,2000,8(5):503-513.
[14]李正平,沈文忠.高效HIT太阳电池组件及其应用[J].上海节能,2015(1):41-45.
[15]Takahama T,Taguchi M,Kuroda S,et al.High efficiency single-and poly-crystalline silicon solar cells using ACJ-HIT structure[C].11th EC PVSEC.Montreux,1992:1057.
[16]Sawada T,Terada N,Tsuge S,et al.High efficiency a-Si/c-Si heterojunction solar cell[C].First WCPEC.Hawaii,1994:1219.
[17]Tanaka M,Okamoto S,Tsuge S,et al.Development of hit solar cells with more than 21%conversion efficiency and commercialization of highest performance hit modules[C].Photovoltaic Energy Conversion,2003.Proceedings of,World Conference on,IEEE Xplore,2003,Vol.1:955-958.
[18]Masuko K,Shigematsu M,Hashiguchi T,et al.Achievement of More Than 25%Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell[J].IEEE Journal of Photovoltaics,2014,4(6):1433-1435.
[19]Fujishima D,Inoue H,Tsunomura Y,et al.High-performance HIT solar cells for thinner silicon wafers[C].Photovoltaic Specialists Conference,IEEE,2010:003137-003140.
[20]Tsunomura Y,Yoshimine Y,Taguchi M,et al.Twenty-two percent efficiency HIT solar cell[J].Solar Energy Materials&Solar Cells,2009,93(6-7):670-673.
[21]Maruyama E,Terakawa A,Taguchi M,et al.Sanyo's Challenges to the Development of High-efficiency HIT Solar Cells and the Expansion of HIT Business[C].Photovoltaic Energy Conversion,Conference Record of the 2006 IEEE,World Conference on.IEEE,2007:1455-1460.
[22]Taguchi M,Terakawa A,Maruyama E,et al.Obtaining a higher Vocin HIT cells[J].Progress in Photovoltaics Research&Applications,2005,13(6):481-488.
[23]Descoeudres A,Holman Z C,Barraud L,et al.>21%Efficient Silicon Heterojunction Solar Cells on n-and p-Type Wafers Compared[J].IEEE Journal of Photovoltaics,2013,3(1):83-89.
[24]NREL,Efficient chart[EB/OL].(2017)[2018-6-25].https://www.nrel.gov/pv/assets/images/efficiency-chart.png.
[25]夏普酝酿生产混合HBC太阳能电池[EB/OL].(2014-9-30)[2018-6-25].http://guangfu.bjx.com.cn/news/20140930/551946.shtml.
[26]Adachi D,Hernández J L,Yamamoto K.Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1%efficiency[J].Applied Physics Letters,2015,107(23):73-812.
[27]Zhang Y,Yu C,Yang M,et al.Optimization of the window layer in large area silicon heterojunction solar cells[J].Rsc Advances,2017,7(15):9258-9263.
[28]Huang H B,Tian G Y,Zhou L,et al.Simulation and experimental study of a novel bifacial structure of silicon heterojunction solar cell for high efficiency and low cost[J].Chinese Physics B,2018,27(3):038502.
[29]Bivour M,Rüdiger M,Reichel C,et al.Analysis of the Diffused Front Surface Field of n-type Silicon Solar Cells with a-Si/c-Si Heterojunction Rear Emitter[J].Energy Procedia,2011,8(4):185-192.
[30]Wang Q,Page M R,Iwaniczko E,et al.Efficient heterojunction solar cells on p-type crystal silicon wafers[J].Applied Physics Letters,2010,96(1):2186-217.
[31]张群芳,朱美芳,刘丰珍.高效薄膜硅/晶体硅异质结电池的研究[J].太阳能,2006,04:40-41.
[32]Tsunomura Y,Yoshimine Y,Taguchi M,et al.Twenty-two percent efficiency HIT solar cell[J].Solar Energy Materials&Solar Cells,2009,93(6-7):670-673.
[33]沈文忠,李正平.硅基异质结太阳电池物理与器件[M].北京:科学出版社,2014,145-147.
[34]Jagannathan B,Anderson W A,Coleman J.Amorphous silicon/p-type crystalline silicon heterojunction solar cells[J].Solar Energy Materials&Solar Cells,1997,64(3):241-249.
[35]何玉平,黄海宾,周浪,等.HWCVD工艺参数对a-Si∶H薄膜结构及其对单晶硅片钝化效果的影响研究[J].功能材料,2015,46(22):22067-22070.
[36]郭万武,张丽平,包健,等.异质结太阳电池中非晶钝化层的分光椭偏分析[J].光学学报,2015,36(6):374-381.
[37]龚洪勇,黄海宾,高江,等.低速率沉积非晶硅薄膜钝化Cz-Si片的研究[J].太阳能学报,2015,36(3):529-533.
[38]田罡煜,王涛,黄海宾,等.热丝CVD法沉积超薄α-Si∶H钝化膜[J].半导体技术,2017,42(5):376-381.
[39]宁武涛,何玉平,黄海宾,等.热丝电流对HWCVD制备α-Si∶H膜结构及钝化效果的影响[J].半导体技术,2015,40(8):606-610.
[40]Wei C Y,Lin C H,Hsiao H T,et al.Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers[J].Materials,2013,6(11):5440-5446.
[41]Xu Y,Hu Z,Diao H,et al.Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers[J].Journal of NonCrystalline Solids,2006,352(9-20):1972-1975.
[42]张群芳,朱美芳,刘丰珍,等.高效率n-nc-Si∶H/p-c-Si异质结太阳能电池[J].半导体学报,2007,28(1):96-99.
[43]Perny M,ály V,Janícek F,et al.Electric measurements of PV heterojunction structures a-Si C/c-Si[J].Journal of Electrical Engineering,2018,69.
[44]威猜·米蒙空革,阿吉特·罗哈吉.利用丝网印刷的局部背场形成高质量背接触:CN,CN 101720512 A[P].2010.
[45]刘振芳,刘淑平,聂慧军.β-Fe Si2(n)/a-Si(i)/c-Si(p)/μc-Si(p+)异质结太阳能电池的模拟与优化[J].红外,2016,37(5):38-42.
[46]Angermann H,Korte L,Rappich J,et al.Optimisation of electronic interface properties of a-Si∶H/c-Si hetero-junction solar cells by wetchemical surface pre-treatment[J].Thin Solid Films,2008,516(20):6775-6781.
[47]Veschetti Y,Muller J C,Damon-Lacoste J,et al.Optimization of amorphous and polymorphous thin silicon layers for the formation of the frontside of heterojunction solar cells on p-type crystalline silicon substrates[J].Thin Solid Films,2006,s 511-512(14):543-547.
[48]Tan M,Zhong S,Wang W,et al.Silicon homo-heterojunction solar cells:A promising candidate to realize high performance more stably[J].Aip Advances,2017,7(8):085016.
[49]Bivour M,Meinhardt C,Pysch D,et al.n-type silicon solar cells with amorphous/crystalline silicon heterojunction rear emitter[C].Photovoltaic Specialists Conference,IEEE,2010:001304-001308.
[50]王涛,黄海宾,孙喜莲,等.重掺杂c-Si背场a-Si∶H/c-Si背结双面太阳能电池初步实验研究[J].激光与光电子学进展,2017(8):241-245.
[51]史少飞.HIT太阳能电池材料的制备与性能研究[D].大连:大连理工大学,2012.
[52]龚洪勇,黄海宾,周浪.晶体硅金字塔绒面结构圆化对其光反射率和非晶硅薄膜钝化效果的影响[J].人工晶体学报,2015,44(4):913-917.
[53]刘美玲,俞健,卞剑涛,等.金属与超薄非晶硅薄膜的接触特性研究[J].太阳能学报,2016,37(11):2952-2957.
[54]石建华,孟凡英,崔艳峰,等.工作气压对反应等离子体沉积ITO薄膜性能的影响[C].中国太阳级硅及光伏发电研讨会,2012.
[55]林鸿生,陈备.a-Si/c-Si异质结太阳能电池制造中的技术分析[J].中国科学技术大学学报,1997(2):132-136.