表面多孔硅层对单晶硅太阳电池性能的影响（英文）
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摘要
反射率对太阳电池的性能至关重要。采用电化学法在单晶硅衬底上制备多孔硅来降低器件的反射率,并采用快速热退火法对多孔硅层进行磷扩散处理,进而制备了单晶硅太阳电池。扫描电子显微镜(SEM)显示出单晶硅表面形成了孔径均匀的多孔硅层,且孔径随着刻蚀时间的增加而增大;紫外-可见光分光光度计表明,该多孔硅层的反射率在400～1 100 nm的光谱范围达到12%;磷扩散后薄层方块电阻达到42Ω/□,证明多孔硅层促进了磷扩散。最终在850℃、40 s快速热退火扩散条件下,成功制备出了效率为12.32%、短路电流密度为27.99 mA/cm~2、开路电压为0.49 V以及填充因子达到71%的太阳电池。
Reflectivity plays an important role to the performances of solar cells.The porous silicon was prepared on the monocrystalline silicon substrates by the electrochemical method to reduce the reflectivity of the devices.Then the phosphorous diffusion was obtained by the rapid thermal annealing method to fabricate monocrystalline silicon solar cells.The images of the scanning electron microscopy(SEM)show that the porous silicon layer with an uniform pore size is formed on the surface of monocrystalline silicon,and the pore size increases with the increase of the etching time.The spectra measured from the ultraviolet-visible spectrophotometer indicate that the reflectivity of the porous silicon layer reaches 12% within the spectral range of 400-1 100 nm.The sheet resistance decreases as the thickness of porous silicon increases,and reaches42Ω/□,which proves that the porous silicon layer promotes the phosphorus diffusion.After rapid thermal phosphorus diffusion at 850 ℃for 40 s,the porous silicon solar cell was achieved with an efficiency of 12.32%,a short circuit current density of 27.99 mA/cm~2,an open circuit voltage of 0.49 V and a filling factor of 71%.
Reflectivity plays an important role to the performances of solar cells.The porous silicon was prepared on the monocrystalline silicon substrates by the electrochemical method to reduce the reflectivity of the devices.Then the phosphorous diffusion was obtained by the rapid thermal annealing method to fabricate monocrystalline silicon solar cells.The images of the scanning electron microscopy(SEM)show that the porous silicon layer with an uniform pore size is formed on the surface of monocrystalline silicon,and the pore size increases with the increase of the etching time.The spectra measured from the ultraviolet-visible spectrophotometer indicate that the reflectivity of the porous silicon layer reaches 12% within the spectral range of 400-1 100 nm.The sheet resistance decreases as the thickness of porous silicon increases,and reaches42Ω/□,which proves that the porous silicon layer promotes the phosphorus diffusion.After rapid thermal phosphorus diffusion at 850 ℃for 40 s,the porous silicon solar cell was achieved with an efficiency of 12.32%,a short circuit current density of 27.99 mA/cm~2,an open circuit voltage of 0.49 V and a filling factor of 71%.
引文
[1]BOETTCHER S W,SPURGEON J M,PUTNAM M C,et al.Energy-conversion properties of vapor-liquid-solid-grown silicon wire-array photocathodes[J].Science,2010,327(5962):185-187.
[2]HE R,DAY T D,SPARKS J R,et al.High pressure chemical vapor deposition of hydrogenated amorphous silicon films and solar cells[J].Advanced Materials,2016,28(28):5939-5942.
[3]SHARMA M,CHAUDHARY D,SUDHAKAR S,et al.Investigation on sub nano-crystalline silicon thin films grown using pulsed PECVD process[J].Materials Science in Semiconductor Processing,2018,80:167-173.
[4]YEROKHOV V Y,MELNYK I I.Porous silicon in solar cell structures:a review of achievements and modern directions of further use[J].Renewable&Sustainable Energy Reviews,1999,3(4):291-322.
[5]AZIZ W J,RAMIZY A,IBRAHIM K,et al.The effect of anti-reflection coating of porous silicon on solar cells efficiency[J].Optik-International Journal for Light and Electron Optics,2011,122(16):1462-1465.
[6]MARTN-PALMA R J,VZQUEZ L,HERRERO P,et al.Morphological,optical and electrical characterization of antireflective porous silicon coatings for solar cells[J].Optical Materials,2001,17(1/2):75-78.
[7]KHOLOSTOV K,SERENELLI L,IZZI M,et al.Electroplated contacts and porous silicon for silicon based solar cells applications[J].Materials Science&Engineering:B,2015,194:78-85.
[8]YOUSSEF G M,EL-NAHASS M M,EL-ZAIAT S Y,et al.Effect of porosity on the electrical and photoelectrical properties of textured n+p silicon solar cells[J].Materials Science in Semiconductor Processing,2015,39:457-466.
[9]BEGHOUL M R,BOUTAOUI N,BOURIDAH H,et al.Experimental study of n-type porous silicon obtained under illumination[J].Optik-International Journal for Light and Electron Optics,2018,161:161-165.
[10]PANEK P,LIPIN'SKI M,CZTERNASTEK H.Porous silicon layer as antireflection coating in solar cells[J].Opto Electronics Review,2000,8(1):57-59.
[11]MENNA P,FRANCIA G D,FERRARA V L.Porous silicon in solar cells:a review and a description of its application as an AR coating[J].Solar Energy Materials&Solar Cells,1995,37(1):13-24.
[12]RAMIZY A,AZIZ W J,HASSAN Z,et al.Improved performance of solar cell based on porous silicon surfaces[J].Optik-International Journal for Light and Electron Optics,2011,122(23):2075-2077.
[13]RAMIZY A,AZIZ W J,HASSAN Z,et al.The effect of porosity on the properties of silicon solar cell[J].Microelectronics International,2010,27(2):117-120.
[14]YAN F,BAO X M,GAO T.Photovoltage spectra of silicon/porous silicon heterojunction[J].Solid State Communications,1994,91(5):341-343.
[15]RAMIZY A,HASSAN Z,OMAR K.Nanostructured GaNon silicon fabricated by electrochemical and laser-induced etching[J].Materials Letters,2011,65(1):61-63.
[16]FLL H,CHRISTOPHERSEN M,CARSTENSEN J,et al.Formation and application of porous silicon[J].Materials Science&Engineering:R,2002,39(4):93-141.
[17]AHMAD S M,CHEOW S L,LUDIN N A,et al.In-depth investigation of spin-on doped solar cells with thermally grown oxide passivation[J].Results in Physics,2017,7:2183-2193.
[18]TIMANS P J.Rapid thermal processing technology for the21st century[J].Materials Science in Semiconductor Processing,1998,1(3/4):169-179.
[19]SHISHIYANU S,SINGH R,SHISHIYANU T,et al.The mechanism of enhanced diffusion of phosphorus in silicon during rapid photothermal processing of solar cells[J].IEEE Transactions on Electron Devices,2011,58(3):776-781.
[20]PETERS S,BALLIF C,BORCHERT D,et al.Record fast thermal processing of 17.5%efficient silicon solar cells[J].Semiconductor Science&Technology,2002,17(7):677-681.
[21]KIM D S,HILALI M M,ROJATGI A,et al.Development of a phosphorus spray diffusion system for low-cost silicon solar cells[J].Journal of the Electrochemical Society,2006,153(7):A1391-A1396.
[22]SHISHIYANU S.RTP diffusion and junction formation in Si and GaAs[C]//Proceedings of IEEE International Conference on Advanced Thermal Processing of Semiconductors.Kyoto,Japan,2006:199-204.
[23]FAIVRE C,BELLET D.Structural properties of p+-type porous silicon layers versus the substrate orientation:an X-ray diffraction comparative study[J].Journal of Applied Crystallography,2010,32(6):1134-1144.
[24]LAI C,LI X,LIU C,et al.Improvement in gravimetric measurement for determining the porosity and thickness of porous silicon using an optimized solution[J].Materials Science in Semiconductor Processing,2014,26:501-505.
[25]CHRISTOPHERSEN M,CARSTENSEN J,RNNEBECKS,et al.Crystal orientation dependence and anisotropic properties of macropore formation of p-and n-type silicon[J].Journal of The Electrochemical Society,2001,148(6):E267-E275.
[26]RNNEBECK S,CARSTENSEN J,FLLZ.Crystal orientation dependence of macropore growth in n-type silicon[J].Electrochemical&Solid State Letters,1999,2(3):126-128.
[27]RAMIZY A,HASSAN Z,OMAR K.Porous silicon nanowires fabricated by electrochemical and laser-induced etching[J].Journal of Materials Science Materials in Electronics,2011,22(7):717-723.
[28]BRENDEL R.Thin-film crystalline silicon mini-modules using porous Si for layer transfer[J].Solar Energy,2004,77(6):969-982.
[29]BILYALOV R R,LDEMANN R,WETTLING W,et al.Multicrystalline silicon solar cells with porous silicon emitter[J].Solar Energy Materials and Solar Cells,2000,60(4):391-420.
[30]SALMAN K A.Effect of surface texturing processes on the performance of crystalline silicon solar cell[J].Solar Energy,2017,147:228-231.
[2]HE R,DAY T D,SPARKS J R,et al.High pressure chemical vapor deposition of hydrogenated amorphous silicon films and solar cells[J].Advanced Materials,2016,28(28):5939-5942.
[3]SHARMA M,CHAUDHARY D,SUDHAKAR S,et al.Investigation on sub nano-crystalline silicon thin films grown using pulsed PECVD process[J].Materials Science in Semiconductor Processing,2018,80:167-173.
[4]YEROKHOV V Y,MELNYK I I.Porous silicon in solar cell structures:a review of achievements and modern directions of further use[J].Renewable&Sustainable Energy Reviews,1999,3(4):291-322.
[5]AZIZ W J,RAMIZY A,IBRAHIM K,et al.The effect of anti-reflection coating of porous silicon on solar cells efficiency[J].Optik-International Journal for Light and Electron Optics,2011,122(16):1462-1465.
[6]MARTN-PALMA R J,VZQUEZ L,HERRERO P,et al.Morphological,optical and electrical characterization of antireflective porous silicon coatings for solar cells[J].Optical Materials,2001,17(1/2):75-78.
[7]KHOLOSTOV K,SERENELLI L,IZZI M,et al.Electroplated contacts and porous silicon for silicon based solar cells applications[J].Materials Science&Engineering:B,2015,194:78-85.
[8]YOUSSEF G M,EL-NAHASS M M,EL-ZAIAT S Y,et al.Effect of porosity on the electrical and photoelectrical properties of textured n+p silicon solar cells[J].Materials Science in Semiconductor Processing,2015,39:457-466.
[9]BEGHOUL M R,BOUTAOUI N,BOURIDAH H,et al.Experimental study of n-type porous silicon obtained under illumination[J].Optik-International Journal for Light and Electron Optics,2018,161:161-165.
[10]PANEK P,LIPIN'SKI M,CZTERNASTEK H.Porous silicon layer as antireflection coating in solar cells[J].Opto Electronics Review,2000,8(1):57-59.
[11]MENNA P,FRANCIA G D,FERRARA V L.Porous silicon in solar cells:a review and a description of its application as an AR coating[J].Solar Energy Materials&Solar Cells,1995,37(1):13-24.
[12]RAMIZY A,AZIZ W J,HASSAN Z,et al.Improved performance of solar cell based on porous silicon surfaces[J].Optik-International Journal for Light and Electron Optics,2011,122(23):2075-2077.
[13]RAMIZY A,AZIZ W J,HASSAN Z,et al.The effect of porosity on the properties of silicon solar cell[J].Microelectronics International,2010,27(2):117-120.
[14]YAN F,BAO X M,GAO T.Photovoltage spectra of silicon/porous silicon heterojunction[J].Solid State Communications,1994,91(5):341-343.
[15]RAMIZY A,HASSAN Z,OMAR K.Nanostructured GaNon silicon fabricated by electrochemical and laser-induced etching[J].Materials Letters,2011,65(1):61-63.
[16]FLL H,CHRISTOPHERSEN M,CARSTENSEN J,et al.Formation and application of porous silicon[J].Materials Science&Engineering:R,2002,39(4):93-141.
[17]AHMAD S M,CHEOW S L,LUDIN N A,et al.In-depth investigation of spin-on doped solar cells with thermally grown oxide passivation[J].Results in Physics,2017,7:2183-2193.
[18]TIMANS P J.Rapid thermal processing technology for the21st century[J].Materials Science in Semiconductor Processing,1998,1(3/4):169-179.
[19]SHISHIYANU S,SINGH R,SHISHIYANU T,et al.The mechanism of enhanced diffusion of phosphorus in silicon during rapid photothermal processing of solar cells[J].IEEE Transactions on Electron Devices,2011,58(3):776-781.
[20]PETERS S,BALLIF C,BORCHERT D,et al.Record fast thermal processing of 17.5%efficient silicon solar cells[J].Semiconductor Science&Technology,2002,17(7):677-681.
[21]KIM D S,HILALI M M,ROJATGI A,et al.Development of a phosphorus spray diffusion system for low-cost silicon solar cells[J].Journal of the Electrochemical Society,2006,153(7):A1391-A1396.
[22]SHISHIYANU S.RTP diffusion and junction formation in Si and GaAs[C]//Proceedings of IEEE International Conference on Advanced Thermal Processing of Semiconductors.Kyoto,Japan,2006:199-204.
[23]FAIVRE C,BELLET D.Structural properties of p+-type porous silicon layers versus the substrate orientation:an X-ray diffraction comparative study[J].Journal of Applied Crystallography,2010,32(6):1134-1144.
[24]LAI C,LI X,LIU C,et al.Improvement in gravimetric measurement for determining the porosity and thickness of porous silicon using an optimized solution[J].Materials Science in Semiconductor Processing,2014,26:501-505.
[25]CHRISTOPHERSEN M,CARSTENSEN J,RNNEBECKS,et al.Crystal orientation dependence and anisotropic properties of macropore formation of p-and n-type silicon[J].Journal of The Electrochemical Society,2001,148(6):E267-E275.
[26]RNNEBECK S,CARSTENSEN J,FLLZ.Crystal orientation dependence of macropore growth in n-type silicon[J].Electrochemical&Solid State Letters,1999,2(3):126-128.
[27]RAMIZY A,HASSAN Z,OMAR K.Porous silicon nanowires fabricated by electrochemical and laser-induced etching[J].Journal of Materials Science Materials in Electronics,2011,22(7):717-723.
[28]BRENDEL R.Thin-film crystalline silicon mini-modules using porous Si for layer transfer[J].Solar Energy,2004,77(6):969-982.
[29]BILYALOV R R,LDEMANN R,WETTLING W,et al.Multicrystalline silicon solar cells with porous silicon emitter[J].Solar Energy Materials and Solar Cells,2000,60(4):391-420.
[30]SALMAN K A.Effect of surface texturing processes on the performance of crystalline silicon solar cell[J].Solar Energy,2017,147:228-231.