电子行业用高纯金溅射靶材研究综述
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摘要
围绕半导体集成电路产业的需求,综述高纯金提纯中杂质元素的控制,制备工艺中的金靶材结构设计、微结构调控技术及靶材与背板焊接绑定等技术的研究现状。提出通过行业协调修订相关产品标准,结合溅射设备完善靶材的结构设计,开展靶材微结构调控进行金薄膜与靶材结构的关联性研究,拓展高纯金靶材的绑定技术等研究方向。
Based on the technical requirements of semiconductor integrated circuit industry, the recent research status of gold sputtering target is reviewed. The related techniques, including the control of impurity elements in the high-pure gold refining and the structure design of gold target and the microstructure regulation are discussed along with the bonding method of target to back plate. New developments are proposed. They are(1) structure design of target on account of sputtering equipment,(2)establishment of the correlationship between the target structure and gold film, and(3) expansion of the research field into the bonding technology of high-pure gold target. Coordination and revision of the relevant product standards in the industry are also suggested.
Based on the technical requirements of semiconductor integrated circuit industry, the recent research status of gold sputtering target is reviewed. The related techniques, including the control of impurity elements in the high-pure gold refining and the structure design of gold target and the microstructure regulation are discussed along with the bonding method of target to back plate. New developments are proposed. They are(1) structure design of target on account of sputtering equipment,(2)establishment of the correlationship between the target structure and gold film, and(3) expansion of the research field into the bonding technology of high-pure gold target. Coordination and revision of the relevant product standards in the industry are also suggested.
引文
[1]赵怀志,宁远涛.金[M].长沙:中南大学出版社,2003:298-316.ZHAO H Z,NING Y T.Gold[M].Changsha:Central South University Press,2003:298-316.
[2]尚再艳,江轩,李勇军,等.集成电路制造用溅射靶材[J].稀有金属,2005,29(4):97-99.SHANG Z Y,JIANG X,LI Y J.Sputtering targets used in integrated circuit[J].Chinese journal of rare metals,2005,29(4):97-99.
[3]何金江,陈明,朱晓光,等.高纯贵金属靶材在半导体制造中的应用与制备技术[J].贵金属,2013,34(S1):79-83.HE J J,CHEN M,ZHU X G,et al.Application and fabrication method of high purity precious metal sputtering targets used in semiconductor[J].Precious metals,2013,34(S1):79-83.
[4]张勤,张俊凯,厉英.磁控溅射金基合金靶材的制备、应用及发展趋势[J].材料导报,2014,28(5):16-19.ZHANG Q,ZHANG J K,LI Y.Manufacture,application and trends of gold-base sputtering target alloys[J].Materials review,2014,28(5):16-19.
[5]吴卫煌.离心萃取制备高纯金的工艺研究[J].黄金,2018,39(6):50-55.WU W H.Study on the preparation of high purity gold by centrifugal extraction[J].Gold,2018,39(6):50-55.
[6]张卜升,吴永谦,张科,等.高纯金、银制备研究现状及展望[J].稀有金属与硬质合金,2017(6):1-4.ZHANG B S,WU Y Q,ZHANG K,et al.Research status and prospect on preparation of high-purity gold and silver[J].Rare metals and cemented carbides,2017(6):1-4.
[7]刘文,谭文进.高纯金制备工艺的研究[J].贵金属,2007,28(S1):44-46.LIU W,TAN W J.Study on the hydrometallurgy processes of high purity gold[J].Precious metals,2007,28(S1):44-46.
[8]李光胜,王明双,马涌.化学还原法制备高纯金试验研究[J].黄金科学技术,2015,23(2):103-106.LI G S,WANG M S,MA Y.Experimental study on the preparation of high purity gold by chemical reduction[J].Gold science and technology,2015,23(2):103-106.
[9]孙根荣.萃取法生产高纯金的试验研究及应用[J].福建冶金,2016,45(3):7-11.SUN G R.Experiment research and application of high-purity gold by extraction[J].Fujian metallurgy.2016,45(3):7-11.
[10]孙敬韬,邓成虎,王日,等.一步法高纯金生产工艺开发与产业化[J].有色金属(冶炼部分),2014(7):45-48.SUN J T,DENG C H,WANG R,et al.Process development and industrialization for production of high purity gold with one-step process[J].Nonferrous metals(Extractive metallurgy),2014(7):45-48.
[11]田小青,戚小京.一种湿法精炼高纯金的新工艺:CN1237644[P].1999-12-08.TIAN X Q,QI X J.New process for refining high-purity gold by wet method:CN1237644[P].1999-12-08.
[12]柳旭,张国清,陈怡兰,等.国内电解精炼法制备高纯金综述[J].贵金属,2017,38(4):87-94.LIU X,ZHANG G Q,CHEN Y L,et al.Review on production status in China of high-purity gold by electro-refining[J].Precious metals,2017,38(4):87-94.
[13]全国有色金属标准化技术委员会.金靶材:GB/T23611-2009[S].北京:中国标准出版社,2009.SAC/TC 243.Gold target:GB/T 23611-2009[S].Beijing:Standards Press of China,2009.
[14]全国黄金标准化技术委员会.高纯金:GB/T 25933-2010[S].北京:中国标准出版社,2010.SAC/TC 379.High-purity gold:GB/T 25933-2010[S].Beijing:Standards Press of China,2010.
[15]全国有色金属标准化技术委员会.电子薄膜用高纯金属溅射靶材纯度等级及杂质含量分析和报告标准指南:YS/T 935-2013[S].北京:中国标准出版社,2014.SAC/TC 243.Standard guide for analysis and reporting the impurity content and grade of high purity metallic sputtering targets for electronic thin film applications:YS/T 935-2013[S].Beijing:Standards Press of China,2014.
[16]汪天龙,邱清泉,靖立伟,等.圆形复合式磁控溅射阴极设计及其放电特性模拟研究[J].物理学报,2018,67(7):070703.WANG T L,QIU Q Q,JING L W,et al.Design of circular composite sputtering cathode and simulation of its discharge characteristics[J].Acta physica sinica.2018,67(7):070703.
[17]张庆丰,范晓鹏,李贵成,等.一种新型磁控溅射靶材:CN204138753U[P].2015-12-04.ZHANG Q F,FAN X P,LI G C,et al.Novel magnetron sputtering target material:CN204138753U[P].2015-12-04.
[18]陈长琦,郭江涛,方应翠,等.矩形平面磁控溅射阴极的磁场模拟及结构设计[J].真空,2008,45(3):65-69.CHEN C Q,GUO J T,FANG Y C,et al.Simulation of magnetic field and structural design of rectangularly plane target cathode for magnetron sputtering[J].Vacuum,2008,45(3):65-69.
[19]阳岸恒,朱勇,邓志明,等.EBSD研究高纯金溅射靶材的微观组织与织构[J].贵金属,2014,6(3):45-48.YANG A H,ZHU Y,DENG Z M,et al.Investigation on microstructure and texture in high pure gold sputtering targets by EBSD[J].Precious metals,2014,6(3):45-48.
[20]朱勇,阳岸恒,张济祥,等.运用电子背散射衍射技术研究高纯金溅射靶材的微观组织与织构[J].有色金属工程,2016,6(1):5-8.ZHU Y,YANG A H,ZHANG J X,et al.Microstructureand texture investigation of sputtering target materials of high purity gold by EBSD[J].Nonferrous metals engineering,2016,6(1):5-8.
[21]雷继锋.集成电路制造用溅射靶材绑定技术相关问题研究[J].金属功能材料,2013(1):48-53.LEI J F.Research on bonding technology of sputtering target for IC manufacturing process[J].Metallic functional material,2013(1):48-53.
[2]尚再艳,江轩,李勇军,等.集成电路制造用溅射靶材[J].稀有金属,2005,29(4):97-99.SHANG Z Y,JIANG X,LI Y J.Sputtering targets used in integrated circuit[J].Chinese journal of rare metals,2005,29(4):97-99.
[3]何金江,陈明,朱晓光,等.高纯贵金属靶材在半导体制造中的应用与制备技术[J].贵金属,2013,34(S1):79-83.HE J J,CHEN M,ZHU X G,et al.Application and fabrication method of high purity precious metal sputtering targets used in semiconductor[J].Precious metals,2013,34(S1):79-83.
[4]张勤,张俊凯,厉英.磁控溅射金基合金靶材的制备、应用及发展趋势[J].材料导报,2014,28(5):16-19.ZHANG Q,ZHANG J K,LI Y.Manufacture,application and trends of gold-base sputtering target alloys[J].Materials review,2014,28(5):16-19.
[5]吴卫煌.离心萃取制备高纯金的工艺研究[J].黄金,2018,39(6):50-55.WU W H.Study on the preparation of high purity gold by centrifugal extraction[J].Gold,2018,39(6):50-55.
[6]张卜升,吴永谦,张科,等.高纯金、银制备研究现状及展望[J].稀有金属与硬质合金,2017(6):1-4.ZHANG B S,WU Y Q,ZHANG K,et al.Research status and prospect on preparation of high-purity gold and silver[J].Rare metals and cemented carbides,2017(6):1-4.
[7]刘文,谭文进.高纯金制备工艺的研究[J].贵金属,2007,28(S1):44-46.LIU W,TAN W J.Study on the hydrometallurgy processes of high purity gold[J].Precious metals,2007,28(S1):44-46.
[8]李光胜,王明双,马涌.化学还原法制备高纯金试验研究[J].黄金科学技术,2015,23(2):103-106.LI G S,WANG M S,MA Y.Experimental study on the preparation of high purity gold by chemical reduction[J].Gold science and technology,2015,23(2):103-106.
[9]孙根荣.萃取法生产高纯金的试验研究及应用[J].福建冶金,2016,45(3):7-11.SUN G R.Experiment research and application of high-purity gold by extraction[J].Fujian metallurgy.2016,45(3):7-11.
[10]孙敬韬,邓成虎,王日,等.一步法高纯金生产工艺开发与产业化[J].有色金属(冶炼部分),2014(7):45-48.SUN J T,DENG C H,WANG R,et al.Process development and industrialization for production of high purity gold with one-step process[J].Nonferrous metals(Extractive metallurgy),2014(7):45-48.
[11]田小青,戚小京.一种湿法精炼高纯金的新工艺:CN1237644[P].1999-12-08.TIAN X Q,QI X J.New process for refining high-purity gold by wet method:CN1237644[P].1999-12-08.
[12]柳旭,张国清,陈怡兰,等.国内电解精炼法制备高纯金综述[J].贵金属,2017,38(4):87-94.LIU X,ZHANG G Q,CHEN Y L,et al.Review on production status in China of high-purity gold by electro-refining[J].Precious metals,2017,38(4):87-94.
[13]全国有色金属标准化技术委员会.金靶材:GB/T23611-2009[S].北京:中国标准出版社,2009.SAC/TC 243.Gold target:GB/T 23611-2009[S].Beijing:Standards Press of China,2009.
[14]全国黄金标准化技术委员会.高纯金:GB/T 25933-2010[S].北京:中国标准出版社,2010.SAC/TC 379.High-purity gold:GB/T 25933-2010[S].Beijing:Standards Press of China,2010.
[15]全国有色金属标准化技术委员会.电子薄膜用高纯金属溅射靶材纯度等级及杂质含量分析和报告标准指南:YS/T 935-2013[S].北京:中国标准出版社,2014.SAC/TC 243.Standard guide for analysis and reporting the impurity content and grade of high purity metallic sputtering targets for electronic thin film applications:YS/T 935-2013[S].Beijing:Standards Press of China,2014.
[16]汪天龙,邱清泉,靖立伟,等.圆形复合式磁控溅射阴极设计及其放电特性模拟研究[J].物理学报,2018,67(7):070703.WANG T L,QIU Q Q,JING L W,et al.Design of circular composite sputtering cathode and simulation of its discharge characteristics[J].Acta physica sinica.2018,67(7):070703.
[17]张庆丰,范晓鹏,李贵成,等.一种新型磁控溅射靶材:CN204138753U[P].2015-12-04.ZHANG Q F,FAN X P,LI G C,et al.Novel magnetron sputtering target material:CN204138753U[P].2015-12-04.
[18]陈长琦,郭江涛,方应翠,等.矩形平面磁控溅射阴极的磁场模拟及结构设计[J].真空,2008,45(3):65-69.CHEN C Q,GUO J T,FANG Y C,et al.Simulation of magnetic field and structural design of rectangularly plane target cathode for magnetron sputtering[J].Vacuum,2008,45(3):65-69.
[19]阳岸恒,朱勇,邓志明,等.EBSD研究高纯金溅射靶材的微观组织与织构[J].贵金属,2014,6(3):45-48.YANG A H,ZHU Y,DENG Z M,et al.Investigation on microstructure and texture in high pure gold sputtering targets by EBSD[J].Precious metals,2014,6(3):45-48.
[20]朱勇,阳岸恒,张济祥,等.运用电子背散射衍射技术研究高纯金溅射靶材的微观组织与织构[J].有色金属工程,2016,6(1):5-8.ZHU Y,YANG A H,ZHANG J X,et al.Microstructureand texture investigation of sputtering target materials of high purity gold by EBSD[J].Nonferrous metals engineering,2016,6(1):5-8.
[21]雷继锋.集成电路制造用溅射靶材绑定技术相关问题研究[J].金属功能材料,2013(1):48-53.LEI J F.Research on bonding technology of sputtering target for IC manufacturing process[J].Metallic functional material,2013(1):48-53.