IGBT门氧层老化故障模拟及其对开通特性的影响
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摘要
IGBT作为中大功率变换器的核心器件,广泛应用于柔性直流输电、新能源发电、轨道机车牵引、电动汽车驱动以及航空航天等重要领域,其运行可靠性对确保系统安全、可靠、高效运行具有重要意义。门氧层是IGBT中相对薄弱的环节,有必要对门氧层老化故障开展相关研究。首先,讨论了门氧层老化的机理;其次,分析了门氧层老化故障对IGBT开通特性的影响;然后,研究了IGBT门氧层老化故障的模拟方法;最后,通过实验研究IGBT门氧层老化故障对其开通特性的影响。论文的研究工作有助于IGBT门氧层老化故障的早期预诊断,具有一定理论意义与工程价值。
As the core device of medium and/or large power converters, IGBTs are widely applied in many important fields such as flexible direct current transmission, renewable energy power generation, railway locomotive traction, electric vehicle drive, and aerospace. The reliability of IGBTs is significant for ensuring the safety, reliability and efficiency of the whole system. The gate oxide layer is a relatively fragile part of the IGBT power module, which is studied in this paper. Firstly, the aging mechanism of gate oxide layer is discussed. Secondly, the effect of gate oxide aging on IGBT turn-on characteristics is analyzed. Then, the simulation method of IGBT gate oxide aging is studied. Finally, the effect of IGBT gate oxide aging failure on its turn-on characteristics is studied experimentally. The research results of this paper could be helpful for IGBT failure prognosis, which has certain theoretical significance and engineering value.
As the core device of medium and/or large power converters, IGBTs are widely applied in many important fields such as flexible direct current transmission, renewable energy power generation, railway locomotive traction, electric vehicle drive, and aerospace. The reliability of IGBTs is significant for ensuring the safety, reliability and efficiency of the whole system. The gate oxide layer is a relatively fragile part of the IGBT power module, which is studied in this paper. Firstly, the aging mechanism of gate oxide layer is discussed. Secondly, the effect of gate oxide aging on IGBT turn-on characteristics is analyzed. Then, the simulation method of IGBT gate oxide aging is studied. Finally, the effect of IGBT gate oxide aging failure on its turn-on characteristics is studied experimentally. The research results of this paper could be helpful for IGBT failure prognosis, which has certain theoretical significance and engineering value.
引文
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[15]GROESENEKEN G,DEGRAEVE R,NIGAM T,et al.Hot carrier degradation and time-dependent dielectric breakdown in oxides[J].Microelectron Engineering,1999,49(1):27-40.
[16]MAHAPATARA S,PARIKH CD,RAO VR,et al.Device scaling effects on hot-carrier induced interface and oxidetrapped charge distributions in MOSFET’s[J].IEEE Trans Electron Dev 2000,47(4):789-796.
[17]BRYANT A,LU L,SANTI E,et al.Modeling of IGBT resistive and inductive turn-on behavior[J].IEEE Trans.Ind.Appl.,2008,44(3):904-914.
[2]YANG S,XIANG D,BRYANT A,et al.Condition Monitoring for Device Reliability in Power Electronic Converters-AReview[J].IEEE Transaction on Power Electronics,2010,25(11):2734-2752.
[3]BRYANT A T,MAWBY P A,PALMER P R,et al.Exploration of Power Device Reliability Using Compact Device Models and Fast Electrothermal Simulation[J].IEEE Transaction on Industry Applications,2008,44(3):894-903.
[4]MUSALLAM M,JOHNSON M,YIN C,et al.Real-Time Life Consumption Power Modules Prognosis Using On-line Rainflow Algorithm in Metro Applications[C]//IEEE Energy Conversion Congress and Exposition,Atlanta,GA.2010:970-977.
[5]王传东,向大为,王腾..双馈风机转子侧变流器电热特性分析[J].新型工业化,2015,5(10):21-26.WANG Chuan-dong,XIANG Da-wei,WANG Teng.Analysis of Electric and Thermal Characteristics of Rotor-Side Converter of the Doubly-fed Induction Generator System[J].The Journal of New Industrialization,2015,5(10):21-26.
[6]BROWN W,ABBAS M,GINART A,et al.Turn-Off Time as an Early Indicator of Insulated Gate Bipolar Transistor Latchup[J].IEEE Transaction on Power Electronics,2012,27(2):479-489.
[7]OUKAOURA A,TALA-IGHILA B,POUDEROUXA B,et al.Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition[J].Microelectronics Reliability,2011,51(2):386-391.
[8]刘也可,向大为,袁逸超,等.PWM变流器现场双脉冲测试方法研究[J].新型工业化,2015,5(10):16-20.LIU Ye-ke,XIANG Da-wei,YUAN Yi-chao,et al.Study on The In-situ Method of Double-pulse Test for the PWM Converter[J].The Journal of New Industrialization,2015,5(10):16-20.
[9]PATIL N,CELAYA J,DAS D,et al.Precursor Parameter Identification for Insulated Gate Bipolar Transistor(IGBT)Prognostics[J].IEEE Transaction on Reliability,2009,58(2):271-276.
[10]GILLIAN A,SIEGFRIED S.Modeling of Wearout,Leakage,and Breakdown of Gate Dielectrics[C]//Proceedings of the IEEE 11 th IPFA,Taiwan.2004:61-64.
[11]CHEN L,PENG F,CAO D.A smart gate drive with selfdiagnosis for power MOSFETs and IGBTs[C]//Proceedings of IEEE Applied Power Electronics Conference and Exposition,Austin,TX,2008:1602-1607.
[12]CONNOR P,COX R,ANDERSON J.Near real-time incipient fault detection in IGBT switches[C]//IECON 2014-40 th Annual Conference of the IEEE Industrial Electronics Society,Dallas,TX,2014:4484-4491.
[13]QUDDUS MT,DEMASSA TA,SANCHEZ J J.Unified model for Q(BD)prediction for thin gate oxide MOS devices with constant voltage and current stress[J].Microelectron Engineering,2000,51(1):357-372.
[14]ALAM M,WEIR B,SILVERMAN P.A future of function or failure[J].IEEE Circuits&Devices Magazine,2002,18(2):42-48.
[15]GROESENEKEN G,DEGRAEVE R,NIGAM T,et al.Hot carrier degradation and time-dependent dielectric breakdown in oxides[J].Microelectron Engineering,1999,49(1):27-40.
[16]MAHAPATARA S,PARIKH CD,RAO VR,et al.Device scaling effects on hot-carrier induced interface and oxidetrapped charge distributions in MOSFET’s[J].IEEE Trans Electron Dev 2000,47(4):789-796.
[17]BRYANT A,LU L,SANTI E,et al.Modeling of IGBT resistive and inductive turn-on behavior[J].IEEE Trans.Ind.Appl.,2008,44(3):904-914.