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Elsevier电子期刊(23)

在“Elsevier电子期刊”中，命中：23条，耗时：0.016989 秒

在所有数据库中总计命中：23条

1.Dependent mixture models: Clustering and borrowing information

作者：Antonio Lijoi ; Bernardo Nipoti ; Igor Pr眉nster

关键词：Bayesian nonparametrics ; Dependent process ; Dirichlet process ; Generalized Pó ; lya urn scheme ; Mixture models ; Normalized 蟽蟽-stable process ; Partially exchangeable random partition

刊名：Computational Statistics and Data Analysis

出版年：March, 2014

2.Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al⁺ ion implanted 4H-SiC p⁺/n diodes

作者：F. Fabbri ; D. Natalini ; A. Cavallini ; T. Sekiguchi ; R. Nipoti ; F. Moscatelli

关键词：Silicon carbide ; Ion implantation ; Cathodoluminescence ; Deep level transient spectroscopy

刊名：Superlattices and Microstructures

出版年：2009

3.Experimental characterization and numerical analysis of the 4H-SiC p–i–n diodes static and transient behaviour

作者：Fortunato Pezzimenti ; Francesco G. Della Corte ; Roberta Nipoti

关键词：Silicon carbide ; 4H-SiC p– ; i– ; n diode ; J– ; V characteristic ; Fast switching ; High temperature ; Carrier lifetime

刊名：Microelectronics Journal

出版年：2008

4.Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes

作者：Francesco G. Della Corte ; Fortunato Pezzimenti ; Roberta Nipoti

关键词：4H– ; SiC p– ; i– ; n diode ; J– ; V characteristic ; Ion implantation ; Doping profile ; Junction depth

刊名：Microelectronics Journal

出版年：2007

5.MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen

作者：A. Poggi ; F. Moscatelli ; Y. Hijikata ; S. Solmi ; R. Nipoti

关键词：MOS capacitors ; Nitrogen implantation ; Interface states

刊名：Microelectronic Engineering

出版年：2007

6.Annealing effects on leakage current and epilayer doping concentration of p⁺n junction 4H-SiC diodes after very high neutron irradiation

作者：Francesco Moscatelli ; A. Scorzoni ; A. Poggi ; R. Nipoti

关键词：Silicon carbide ; Detectors ; Radiation damage ; Annealing effects

刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

出版年：2007

7.Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus

作者：S. Rao ; F. Bergamini ; R. Nipoti and S.E. Saddow

关键词：Silicon carbide ; Al implantation ; Silane ; Annealing ; p⁺/n Junction diode

刊名：Applied Surface Science

出版年：2006

8.Charge states distribution of 0.16–3.3 MeV He ions transmitted through silicon

作者：Bianconi ; M. ; Bentini ; G.G. ; Lotti ; R. ; Nipoti ; R.

关键词：34.50.F ; 34.70 ; Charge transfer ; Ion&ndash ; matter interaction

刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

出版年：2002

9.Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra

作者：Lulli ; G. ; Albertazzi ; E. ; Bianconi ; M. ; Bentini ; G.G. ; Nipoti ; R. ; Lotti ; R.

关键词：34.50.Bw ; 82.80.Yc ; 61.85.+p ; 07.05.Tp ; Electronic energy loss ; Rutherford backscattering ; Channeling ; Monte-Carlo simulation

刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

出版年：2000

10.Binary collision approximation modeling of ion-induced damage effects in crystalline 6H–SiC

作者：Lulli ; G. ; Albertazzi ; E. ; Bianconi ; M. ; Nipoti ; R.

关键词：84.40.Ry ; 61.72Ww ; 61.80Jh ; 81.05.Je ; Ion implantation ; Monte Carlo simulation ; Silicon carbide ; Radiation damage

刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

出版年：1999

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2027年及以后(1)

2009年(1)

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2007年(3)

2006年(1)

2002年(1)

2000年(1)

2000年及以前(14)

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